elm53402ca

Single N-channel MOSFET
ELM53402CA-S
■General description
■Features
ELM53402CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
•
■Maximum absolute ratings
Parameter
Drain-source voltage
Symbol
Vds
Gate-source voltage
Vgs
Ta=25°C
Continuous drain current(Tj=150°C)
Vds=20V
Id=3.6A
Rds(on) < 70mΩ (Vgs=4.5V)
Rds(on) < 80mΩ (Vgs=2.5V)
Rds(on) < 100mΩ (Vgs=1.8V)
Ta=25°C. Unless otherwise noted.
Limit
Unit
20
V
±12
3.6
Id
Ta=70°C
Pulsed drain current
Tc=25°C
Tc=70°C
A
1.25
0.80
- 55 to 150
Pd
Junction and storage temperature range
A
2.0
10
Idm
Power dissipation
V
Tj, Tstg
W
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Rθja
■Pin configuration
Typ.
Max.
120
■Circuit
D
SOT-23(TOP VIEW)
3
1
2
Unit
°C/W
Pin No.
Pin name
1
2
GATE
SOURCE
3
DRAIN
G
S
5- 1
Single N-channel MOSFET
ELM53402CA-S
■Electrical characteristics
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=16V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±12V
Gate threshold voltage
On state drain current
Static drain-source on-resistance
20
V
Ta=85°C
Vgs(th) Vds=Vgs, Id=250μA
Vgs=4.5V, Vds=5V
Id(on)
Vgs=2.5V, Vds=5V
Vgs=4.5V, Id=2.4A
Rds(on) Vgs=2.5V, Id=2.0A
Vgs=1.8V, Id=1.8A
0.3
6
56
66
86
Vds=5V, Id=3.6A
10
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Vsd
Is
Is=1.6A, Vgs=0V
0.85
Input capacitance
Ciss
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Coss
Crss
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Vgs=4.5V, Vds=10V
Id=3.6A
td(on)
Vgs=4.5V, Vds=10V
tr
RL=2.8Ω, Id=3.6A
td(off)
Rgen=1Ω
tf
5- 2
±100
nA
0.8
V
A
Gfs
Qg
Qgs
Qgd
μA
4
Forward transconductance
Vgs=0V, Vds=10V, f=1MHz
1
10
70
80
100
mΩ
S
1.20
1.6
V
A
340
pF
115
33
pF
pF
4.2
0.6
0.4
5.0
nC
nC
nC
8
8
15
15
ns
ns
25
40
ns
8
15
ns
AFN3414A
Alfa-MOS
20V N-Channel
Technology
Enhancement Mode MOSFET
Single N-channel MOSFET
ELM53402CA-S
Typical
Characteristics
■Typical
electrical and thermal characteristics
©Alfa-MOS Technology Corp.
Rev.B July 2010
www.alfa-mos.com
Page 3
5- 3
AFN3414A
Alfa-MOS
20V N-Channel
Technology
Enhancement Mode MOSFET
Single N-channel MOSFET
ELM53402CA-S
Typical Characteristics
©Alfa-MOS Technology Corp.
Rev.B July 2010
www.alfa-mos.com
Page 4
5- 4
AFN3414A
Alfa-MOS
20V N-Channel
Enhancement Mode MOSFET
Technology
Single N-channel MOSFET
ELM53402CA-S
Typical■Test
Characteristics
circuit and waveform
©Alfa-MOS Technology Corp.
Rev.B July 2010
www.alfa-mos.com
Page 5
5- 5
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