Single N-channel MOSFET ELM53402CA-S ■General description ■Features ELM53402CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • • ■Maximum absolute ratings Parameter Drain-source voltage Symbol Vds Gate-source voltage Vgs Ta=25°C Continuous drain current(Tj=150°C) Vds=20V Id=3.6A Rds(on) < 70mΩ (Vgs=4.5V) Rds(on) < 80mΩ (Vgs=2.5V) Rds(on) < 100mΩ (Vgs=1.8V) Ta=25°C. Unless otherwise noted. Limit Unit 20 V ±12 3.6 Id Ta=70°C Pulsed drain current Tc=25°C Tc=70°C A 1.25 0.80 - 55 to 150 Pd Junction and storage temperature range A 2.0 10 Idm Power dissipation V Tj, Tstg W °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Rθja ■Pin configuration Typ. Max. 120 ■Circuit D SOT-23(TOP VIEW) 3 1 2 Unit °C/W Pin No. Pin name 1 2 GATE SOURCE 3 DRAIN G S 5- 1 Single N-channel MOSFET ELM53402CA-S ■Electrical characteristics Parameter Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Condition STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=16V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±12V Gate threshold voltage On state drain current Static drain-source on-resistance 20 V Ta=85°C Vgs(th) Vds=Vgs, Id=250μA Vgs=4.5V, Vds=5V Id(on) Vgs=2.5V, Vds=5V Vgs=4.5V, Id=2.4A Rds(on) Vgs=2.5V, Id=2.0A Vgs=1.8V, Id=1.8A 0.3 6 56 66 86 Vds=5V, Id=3.6A 10 Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Vsd Is Is=1.6A, Vgs=0V 0.85 Input capacitance Ciss Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Coss Crss Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Vgs=4.5V, Vds=10V Id=3.6A td(on) Vgs=4.5V, Vds=10V tr RL=2.8Ω, Id=3.6A td(off) Rgen=1Ω tf 5- 2 ±100 nA 0.8 V A Gfs Qg Qgs Qgd μA 4 Forward transconductance Vgs=0V, Vds=10V, f=1MHz 1 10 70 80 100 mΩ S 1.20 1.6 V A 340 pF 115 33 pF pF 4.2 0.6 0.4 5.0 nC nC nC 8 8 15 15 ns ns 25 40 ns 8 15 ns AFN3414A Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET Single N-channel MOSFET ELM53402CA-S Typical Characteristics ■Typical electrical and thermal characteristics ©Alfa-MOS Technology Corp. Rev.B July 2010 www.alfa-mos.com Page 3 5- 3 AFN3414A Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET Single N-channel MOSFET ELM53402CA-S Typical Characteristics ©Alfa-MOS Technology Corp. Rev.B July 2010 www.alfa-mos.com Page 4 5- 4 AFN3414A Alfa-MOS 20V N-Channel Enhancement Mode MOSFET Technology Single N-channel MOSFET ELM53402CA-S Typical■Test Characteristics circuit and waveform ©Alfa-MOS Technology Corp. Rev.B July 2010 www.alfa-mos.com Page 5 5- 5