elm57800ga

Dual N-channel MOSFET
ELM57800GA-S
■General description
■Features
ELM57800GA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
•
Vds=20V
Id=1.8A
Rds(on) < 280mΩ (Vgs=4.5V)
Rds(on) < 340mΩ (Vgs=2.5V)
Rds(on) < 580mΩ (Vgs=1.8V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Symbol
Vds
Gate-source voltage
Vgs
Ta=25°C
Continuous drain current
Tc=25°C
Pd
Tc=70°C
Junction and storage temperature range
Tj, Tstg
■Pin configuration
SC-70-6(TOP VIEW)
1
2
4
3
V
A
1.2
Idm
Power dissipation
5
±12
1.8
Id
Ta=70°C
Pulsed drain current
6
Ta=25°C. Unless otherwise noted.
Limit
Unit
20
V
6
0.3
A
W
0.2
-55 to 150
°C
■Circuit
Pin No.
1
Pin name
SOURCE1
2
3
GATE1
DRAIN2
4
SOURCE2
5
6
GATE2
DRAIN1
5-1
D2
D1
G2
G1
S1
S2
Dual N-channel MOSFET
ELM57800GA-S
■Electrical characteristics
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=20V, Vgs=0V
Gate-source leakage current
Igss
Vds=0V, Vgs=±12V
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
0.4
1.8
1
5
μA
±100
nA
1.0
V
A
Vgs=4.5V, Id=1.8A
240
280
Rds(on) Vgs=2.5V, Id=1.5A
Vgs=1.8V, Id=1.2A
Gfs Vds=10V, Id=1.0A
300
500
1
340
580
0.65
1.20
V
1
A
Vsd
Is=1.0A, Vgs=0V
Is
Ciss
Coss
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Turn-off delay time
Turn-off fall time
V
Ta=85°C
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=5V
Input capacitance
Output capacitance
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
20
mΩ
S
70
20
pF
pF
Crss
8
pF
Qg
1.06
Vgs=0V, Vds=10V, f=1MHz
1.38
nC
Qgs Vgs=4.5V, Vds=10V, Id=1.2A
Qgd
td(on)
0.18
0.32
18
26
nC
nC
ns
tr
Vgs=4.5V, Vds=10V
td(off) RL=20Ω, Id=1.2A, Rgen=1Ω
20
70
28
110
ns
ns
25
40
ns
tf
5-2
AFN1912
Alfa-MOS
20V N-Channel
Technology
Enhancement Mode MOSFET
Dual N-channel MOSFET
ELM57800GA-S
■Typical
electrical and thermal characteristics
Typical
Characteristics
©Alfa-MOS Technology Corp.
Rev.A Oct. 2010
www.alfa-mos.com
Page 3
5-3
AFN1912
Alfa-MOS
20V N-Channel
Technology
Enhancement Mode MOSFET
Dual N-channel MOSFET
ELM57800GA-S
Typical Characteristics
©Alfa-MOS Technology Corp.
Rev.A Oct. 2010
www.alfa-mos.com
Page 4
5-4
AFN1912
Alfa-MOS
20V N-Channel
Enhancement Mode MOSFET
Technology
Dual N-channel MOSFET
ELM57800GA-S
Typical Characteristics
■Test circuit and waveform
©Alfa-MOS Technology Corp.
Rev.A Oct. 2010
www.alfa-mos.com
Page 5
5-5
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