elm588822a

Dual N-channel MOSFET (common drain)
ELM588822A-S
■General description
■Features
ELM588822A-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
•
Vds=20V
Id=7.2A
Rds(on) = 28mΩ (Vgs=4.5V)
Rds(on) = 32mΩ (Vgs=2.5V)
Rds(on) = 45mΩ (Vgs=1.8V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Symbol
Vds
Gate-source voltage
Vgs
±12
7.2
4.8
V
Idm
20
A
Pd
2.8
1.8
W
Tj, Tstg
-55 to 150
°C
Ta=25°C
Ta=70°C
Continuous drain current
Id
Pulsed drain current
Tc=25°C
Tc=70°C
Power dissipation
Ta=25°C. Unless otherwise noted.
Limit
Unit
20
V
Junction and storage temperature range
A
■Thermal characteristics
Parameter
Symbol
Maximum junction-to-ambient
Typ.
Rθja
■Pin configuration
Max.
Unit
62.5
°C/W
■Circuit
TSSOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
2
Pin name
DRAIN1/DRAIN2
SOURCE1
3
4
5
SOURCE1
GATE1
GATE2
6
7
8
SOURCE2
SOURCE2
DRAIN1/DRAIN2
5-1
D1
D2
G2
G1
S1
S2
Dual N-channel MOSFET (common drain)
ELM588822A-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Condition
Vds=16V, Vgs=0V, Ta=85°C
30
Vds=0V, Vgs=±12V
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=5V
±100
nA
0.8
V
A
24
28
Rds(on) Vgs=2.5V, Id=4.8A
27
32
36
25
45
0.7
1.2
V
1.5
A
Diode forward voltage
Vsd
Is=1.6A, Vgs=0V
Is
Ciss
Coss
Crss
Gate-source charge
Qg
Qgs
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-off fall time
0.4
10
μA
Vgs=4.5V, Id=7.2A
Gfs
Turn-on rise time
Turn-off delay time
V
1
Forward transconductance
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
20
Vds=16V, Vgs=0V
Vgs=1.8V, Id=3.0A
Vds=5V, Id=7A
Max.body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit
Vgs=0V, Vds=20V, f=1MHz
Vgs=4.5V, Vds=10V, Id=7A
Vgs=4.5V, Vds=10V
tr
RL=1.4Ω, Id=1A
td(off)
Rgen=3Ω
tf
5-2
mΩ
S
700
pF
75
45
pF
pF
650
200
nC
nC
180
8
12
nC
ns
12
20
ns
32
40
ns
10
15
ns
AFN8822
Alfa-MOS
20V Common-Drain N-Channel
Technology
(common drain)Mode MOSFET
Dual N-channel MOSFET Enhancement
ELM588822A-S
Typical
Characteristics
■Typical
electrical and thermal characteristics
©Alfa-MOS Technology Corp.
Rev.A Nov. 2010
www.alfa-mos.com
Page 3
5-3
AFN8822
Alfa-MOS
20V Common-Drain N-Channel
Technology
Enhancement Mode MOSFET
Dual N-channel MOSFET (common drain)
ELM588822A-S
Typical Characteristics
©Alfa-MOS Technology Corp.
Rev.A Nov. 2010
www.alfa-mos.com
Page 4
5-4
AFN8822
Alfa-MOS
20V Common-Drain N-Channel
Technology
(common drain)Mode MOSFET
Dual N-channel MOSFET Enhancement
ELM588822A-S
Typical
■TestCharacteristics
circuit and waveform
©Alfa-MOS Technology Corp.
Rev.A Nov. 2010
www.alfa-mos.com
Page 5
5-5
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