Dual N-channel MOSFET (common drain) ELM588822A-S ■General description ■Features ELM588822A-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • • Vds=20V Id=7.2A Rds(on) = 28mΩ (Vgs=4.5V) Rds(on) = 32mΩ (Vgs=2.5V) Rds(on) = 45mΩ (Vgs=1.8V) ■Maximum absolute ratings Parameter Drain-source voltage Symbol Vds Gate-source voltage Vgs ±12 7.2 4.8 V Idm 20 A Pd 2.8 1.8 W Tj, Tstg -55 to 150 °C Ta=25°C Ta=70°C Continuous drain current Id Pulsed drain current Tc=25°C Tc=70°C Power dissipation Ta=25°C. Unless otherwise noted. Limit Unit 20 V Junction and storage temperature range A ■Thermal characteristics Parameter Symbol Maximum junction-to-ambient Typ. Rθja ■Pin configuration Max. Unit 62.5 °C/W ■Circuit TSSOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 2 Pin name DRAIN1/DRAIN2 SOURCE1 3 4 5 SOURCE1 GATE1 GATE2 6 7 8 SOURCE2 SOURCE2 DRAIN1/DRAIN2 5-1 D1 D2 G2 G1 S1 S2 Dual N-channel MOSFET (common drain) ELM588822A-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Gate threshold voltage On state drain current Static drain-source on-resistance Condition Vds=16V, Vgs=0V, Ta=85°C 30 Vds=0V, Vgs=±12V Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V ±100 nA 0.8 V A 24 28 Rds(on) Vgs=2.5V, Id=4.8A 27 32 36 25 45 0.7 1.2 V 1.5 A Diode forward voltage Vsd Is=1.6A, Vgs=0V Is Ciss Coss Crss Gate-source charge Qg Qgs Gate-drain charge Turn-on delay time Qgd td(on) Turn-off fall time 0.4 10 μA Vgs=4.5V, Id=7.2A Gfs Turn-on rise time Turn-off delay time V 1 Forward transconductance Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge 20 Vds=16V, Vgs=0V Vgs=1.8V, Id=3.0A Vds=5V, Id=7A Max.body-diode continuous current DYNAMIC PARAMETERS Input capacitance Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Vgs=0V, Vds=20V, f=1MHz Vgs=4.5V, Vds=10V, Id=7A Vgs=4.5V, Vds=10V tr RL=1.4Ω, Id=1A td(off) Rgen=3Ω tf 5-2 mΩ S 700 pF 75 45 pF pF 650 200 nC nC 180 8 12 nC ns 12 20 ns 32 40 ns 10 15 ns AFN8822 Alfa-MOS 20V Common-Drain N-Channel Technology (common drain)Mode MOSFET Dual N-channel MOSFET Enhancement ELM588822A-S Typical Characteristics ■Typical electrical and thermal characteristics ©Alfa-MOS Technology Corp. Rev.A Nov. 2010 www.alfa-mos.com Page 3 5-3 AFN8822 Alfa-MOS 20V Common-Drain N-Channel Technology Enhancement Mode MOSFET Dual N-channel MOSFET (common drain) ELM588822A-S Typical Characteristics ©Alfa-MOS Technology Corp. Rev.A Nov. 2010 www.alfa-mos.com Page 4 5-4 AFN8822 Alfa-MOS 20V Common-Drain N-Channel Technology (common drain)Mode MOSFET Dual N-channel MOSFET Enhancement ELM588822A-S Typical ■TestCharacteristics circuit and waveform ©Alfa-MOS Technology Corp. Rev.A Nov. 2010 www.alfa-mos.com Page 5 5-5