elm529977a

Single N-channel MOSFET
ELM529977A-S
■General description
■Features
ELM529977A-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=60V
Id=12A
Rds(on) = 118mΩ (Vgs=10V)
Rds(on) = 130mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Symbol
Drain-source voltage
Vds
60
V
Gate-source voltage
Vgs
±20
12
V
Ta=25°C
Continuous drain current
Id
Ta=70°C
Pulsed drain current
Avalanche current
Idm
Ias
15
A
Pd
40
15
W
Tj, Tstg
-55 to 150
°C
Tc=25°C
Tc=70°C
Power dissipation
Junction and storage temperature range
A
8
30
A
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Rθja
■Pin configuration
Typ.
Max.
62.5
Unit
°C/W
■Circuit
D
TO-252-3(TOP VIEW)
TAB
2
1
Pin No.
Pin name
1
2
GATE
DRAIN
3
SOURCE
3
5-1
G
S
Single N-channel MOSFET
ELM529977A-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Vds=60V, Vgs=0V, Ta=85°C
5
Vds=0V, Vgs=±20V
Static drain-source on-resistance
Rds(on)
Max. body-diode continuous current
DYNAMIC PARAMETERS
V
1
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=5V
Gfs
Vsd
60
Vds=60V, Vgs=0V
Gate threshold voltage
On state drain current
Forward transconductance
Diode forward voltage
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit
0.7
30
±100
nA
2.5
V
A
Vgs=10V, Id=8A
118
Vgs=4.5V, Id=6A
130
Vds=15V, Id=5.3A
Is=2A, Vgs=0V
12
0.8
Is
μA
mΩ
1.2
S
V
12
A
Input capacitance
Output capacitance
Ciss
Coss
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Qgd
3
td(on)
6
12
ns
tr
Vgs=10V, Vds=30V, RL=6Ω
td(off) Id=5A, Rgen=3.3Ω
6
12
12
20
ns
ns
4
10
ns
Turn-on rise time
Turn-off delay time
Turn-off fall time
480
50
pF
pF
Crss
35
pF
Qg
Qgs
6
2
Vgs=0V, Vds=25V, f=1MHz
Vgs=4.5V, Vds=48V, Id=5A
tf
5-2
12
nC
nC
nC
AFN9977
Alfa-MOS
60V N-Channel
Technology
Enhancement Mode MOSFET
Single N-channel MOSFET
ELM529977A-S
Typical
Characteristics
■Typical
electrical and thermal characteristics
©Alfa-MOS Technology Corp.
Rev.A Jul. 2012
www.alfa-mos.com
Page 3
5-3
AFN9977
Alfa-MOS
60V N-Channel
Technology
Enhancement Mode MOSFET
Single N-channel MOSFET
ELM529977A-S
Typical Characteristics
©Alfa-MOS Technology Corp.
Rev.A Jul. 2012
www.alfa-mos.com
Page 4
5-4
AFN9977
Alfa-MOS
60V N-Channel
Technology
Enhancement Mode MOSFET
Single N-channel MOSFET
ELM529977A-S
Typical
■TestCharacteristics
circuit and waveform
©Alfa-MOS Technology Corp.
Rev.A Jul. 2012
www.alfa-mos.com
Page 5
5-5
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