Data Sheet

Freescale Semiconductor
Technical Data
Document Number: AFT26H250W03S_24S
Rev. 0, 11/2013
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These 50 W asymmetrical Doherty RF power LDMOS transistors are designed
for cellular base station applications requiring very wide instantaneous bandwidth
capability covering the frequency range of 2496 to 2690 MHz.
AFT26H250W03SR6
AFT26H250--24SR6
 Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQA = 700 mA, VGSB = 0.4 Vdc, Pout = 50 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
2496 MHz
14.1
44.6
8.1
--31.5
2590 MHz
14.4
44.9
8.1
--33.8
2690 MHz
14.2
44.2
7.9
--37.6
2496–2690 MHz, 50 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTORS
Features





Advanced High Performance In--Package Doherty
Designed for Wide Instantaneous Bandwidth Applications (AFT26H250W03S)
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.
Carrier
RFinA/VGSA 3
1 RFoutA/VDSA
(1)
2 RFoutB/VDSB
RFinB/VGSB 4
Peaking
(Top View)
Figure 1. Pin Connections
NI--1230S--4S
AFT26H250W03SR6
1. Pin connections 1 and 2 are DC coupled and RF independent.
Carrier
6 VBWA(2)
RFinA/VGSA 1
5 RFoutA/VDSA
RFinB/VGSB 2
4 RFoutB/VDSB
Peaking
3 VBWB(2)
(Top View)
Figure 2. Pin Connections
NI--1230S--4L2L
AFT26H250--24SR6
2. Device cannot operate with the VDD current supplied through pin 3 and pin 6.
 Freescale Semiconductor, Inc., 2013. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
AFT26H250W03SR6 AFT26H250--24SR6
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Tstg
--65 to +150
C
TC
--40 to +125
--40 to +150
C
TJ
--40 to +225
C
CW
294
1.7
W
W/C
Storage Temperature Range
Case Operating Temperature Range
AFT26H250W03S
AFT26H250--24S
Operating Junction Temperature Range (1,2)
CW Operation @ TC = 25C
Derate above 25C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 78C, 50 W--CDMA, 28 Vdc, IDQA = 700 mA, VGSB = 0.4 Vdc, 2590 MHz
Symbol
Value (2,3)
Unit
RJC
0.42
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
AFT26H250W03S (4,5)
AFT26H250--24S (6)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
AFT26H250W03S (4,5)
AFT26H250--24S (6)
IDSS
—
—
—
—
5
1
Adc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
AFT26H250W03S (4,5)
AFT26H250--24S (6)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 140 Adc)
AFT26H250W03S (4,6)
AFT26H250--24S (6)
VGS(th)
0.8
1.2
1.6
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, IDA = 700 mAdc,
Measured in Functional Test)
AFT26H250W03S (4,6)
AFT26H250--24S (6)
VGS(Q)
1.4
1.8
2.2
Vdc
Drain--Source On--Voltage
(VGS = 6 Vdc, ID = 1.4 Adc)
AFT26H250W03S (4,6)
AFT26H250--24S (6)
VDS(on)
0.1
0.15
0.3
Vdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 Adc)
AFT26H250W03S (4,6)
AFT26H250--24S (6)
VGS(th)
0.8
1.2
1.6
Vdc
Drain--Source On--Voltage
(VGS = 6 Vdc, ID = 2.0 Adc)
AFT26H250W03S (4,6)
AFT26H250--24S (6)
VDS(on)
0.1
0.15
0.3
Vdc
On Characteristics -- Side A (Carrier)
On Characteristics -- Side B (Peaking)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. VDDA and VDDB must be tied together and powered by a single DC power supply.
5. Side A and Side B are tied together for these measurements.
6. Each side of device measure separately.
(continued)
AFT26H250W03SR6 AFT26H250--24SR6
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Symbol
Characteristic
Min
Typ
Max
Unit
Functional Tests (1,2,3) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 700 mA, VGSB = 0.4 Vdc, Pout = 50 W Avg.,
f = 2496 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
Gps
13.0
14.1
16.0
dB
Drain Efficiency
D
41.0
44.6
—
%
7.5
7.4
8.1
8.1
—
—
—
--31.5
--29.0
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
AFT26H250W03S
AFT26H250--24S
Adjacent Channel Power Ratio
PAR
ACPR
dB
dBc
Load Mismatch — AFT26H250W03S (In Freescale Test Fixture, 50 ohm system) IDQA = 700 mA, f = 2590 MHz
VSWR 10:1 at 32 Vdc, 364 W(4) CW Output Power
(3 dB Input Overdrive from 230 W CW Rated Power)
No Device Degradation
Load Mismatch — AFT26H250--24S (In Freescale Test Fixture, 50 ohm system) IDQA = 700 mA, f = 2590 MHz
VSWR 10:1 at 32 Vdc, 335 W(4) CW Output Power
(2 dB Input Overdrive from 230 W CW Rated Power)
No Device Degradation
Typical Performances (2) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 700 mA, VGSB = 0.4 Vdc,
2496--2690 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
230
—
W
Pout @ 3 dB Compression Point (5)
P3dB
—
320
—
W

—
--22
—

VBWres
—
—
140
110
—
—
MHz
Gain Flatness in 194 MHz Bandwidth @ Pout = 50 W Avg.
GF
—
0.3
—
dB
Gain Variation over Temperature
(--30C to +85C)
G
—
0.002
—
dB/C
P1dB
—
0.006
—
dB/C
AM/PM
(Maximum value measured at the P3dB compression point across the
2496--2690 MHz frequency range)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Output Power Variation over Temperature
(--30C to +85C) (4)
1.
2.
3.
4.
5.
AFT26H250W03S
AFT26H250--24S
Part internally matched both on input and output.
VDDA and VDDB must be tied together and powered by a single DC power supply (AFT26H250W03S).
Measurements made with device in an asymmetrical Doherty configuration.
Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
AFT26H250W03SR6 AFT26H250--24SR6
RF Device Data
Freescale Semiconductor, Inc.
3
C21
VDDA
VGGA
+
--
D52784
C13
C3
C4
C5
Z1
R1
C8
C6
C7
CUT OUT AREA
C1
C
C14
C15
C16
P
C17
C18
AFT26H250W03S/24S
Rev. 1
C9
C12
C11
R2
C2
C10
R3
C19
C20
-VDDB
+
VGGB
C22
Note: VDDA and VDDB must be tied together and powered by a single DC power supply.
Figure 3. AFT26H250W03SR6(--24SR6) Test Circuit Component Layout
Table 5. AFT26H250W03SR6(--24SR6) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C9, C11, C12, C19, C20
10 F Chip Capacitors
C5750X7S2A106M230KB
TDK
C2, C5, C8, C10, C13, C18
6.8 pF Chip Capacitors
ATC600F6R8BT250XT
ATC
C3, C4
0.5 pF Chip Capacitors
ATC600F0R5BT250XT
ATC
C6, C7
0.3 pF Chip Capacitors
ATC600F0R3BT250XT
ATC
C14
0.8 pF Chip Capacitor
ATC600F0R8BT250XT
ATC
C15
2.0 pF Chip Capacitor
ATC600F2R0BT250XT
ATC
C16
10 pF Chip Capacitor
ATC600F100JT250XT
ATC
C17
0.9 pF Chip Capacitor
ATC600F0R9BT250XT
ATC
C21, C22
220 F Electrolytic Capacitors
227CKS050M
Illinois Capacitor
R1
50 , 4 W Chip Resistor
CW12010T0050GBK
ATC
R2, R3
2.0 , 1/4 W Chip Resistors
CRCW12062R00JNEA
Vishay
Z1
2300--2700 MHz Band, 5 dB Directional Coupler
X3C25P1-05S
Anaren
PCB
Rogers RO4305B, 0.020, r = 3.66
D52784
MTL
AFT26H250W03SR6 AFT26H250--24SR6
4
RF Device Data
Freescale Semiconductor, Inc.
14.6
Gps, POWER GAIN (dB)
46
D
45
14.4
44
14.2
VDD = 28 Vdc, Pout = 50 W (Avg.)
IDQA = 700 mA, VGSB = 0.4 mA
Single--Carrier W--CDMA
Gps
14
43
13.8
PARC
13.6
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
13.4
13.2
13
2480
2510
2540
2570
2600
2660
--1.5
--31
--1.7
--33
--35
ACPR
2630
--29
--37
2690
--39
2720
--1.9
--2.1
--2.3
PARC (dB)
47
14.8
ACPR (dBc)
15
D, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
--2.5
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 4. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 50 Watts Avg.
--10
VDD = 28 Vdc, Pout = 100 W (PEP), IDQA = 700 mA
VGSB = 0.4 Vdc, Two--Tone Measurements
--20 (f1 + f2)/2 = Center Frequency of 2590 MHz
IM3--U
--30
IM3--L
--40
IM5--L
--50
IM5--U
IM7--U
--60
IM7--L
1
10
100
300
TWO--TONE SPACING (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 5. Intermodulation Distortion Products
versus Two--Tone Spacing — AFT26H250W03S
--10
VDD = 28 Vdc, Pout = 100 W (PEP), IDQA = 700 mA
VGSB = 0.4 Vdc, Two--Tone Measurements
--20 (f1 + f2)/2 = Center Frequency of 2590 MHz
--30
IM3--L
IM3--U
--40
IM5--L
--50
IM5--U
IM7--U
--60
--70
IM7--L
1
10
100
300
TWO--TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Two--Tone Spacing — AFT26H250--24S
AFT26H250W03SR6 AFT26H250--24SR6
RF Device Data
Freescale Semiconductor, Inc.
5
15
0
14
13
12
11
ACPR
--1 dB = 33.6 W
Single--Carrier W--CDMA 3.84 MHz Channel
Bandwidth, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
10
30
50
50
--20
30
--3 dB = 71 W
--3
--4
--15
40
--2 dB = 54.1 W
--2
60
D
Gps
--1
--5
10
VDD = 28 Vdc, IDQA = 700 mA
VGSB = 0.4 Vdc, f = 2590 MHz
--30
--35
10
--40
0
--45
60
0
50
--10
PARC
90
70
20
--25
ACPR (dBc)
1
D DRAIN EFFICIENCY (%)
16
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS
110
Pout, OUTPUT POWER (WATTS)
15
Gps, POWER GAIN (dB)
D
VDD = 28 Vdc, IDQA = 700 mA
VGSB = 0.4 Vdc, Single--Carrier W--CDMA
Gps
2590 MHz
14
2690 MHz
2496 MHz
2690 MHz
2590 MHz
2496 MHz
13
12
ACPR
2496 MHz
30
2690 MHz
2590 MHz
11
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
10
1
10
40
100
20
10
0
300
--20
--30
--40
ACPR (dBc)
16
D, DRAIN EFFICIENCY (%)
Figure 7. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
18
15
Gain
GAIN (dB)
12
9
6
VDD = 28 Vdc
Pin = 0 dBm
IDQA = 700 mA
VGSB = 0.4 Vdc
3
0
2300
2400
2500
2600
2700
2800
2900
3000
f, FREQUENCY (MHz)
Figure 9. Broadband Frequency Response
AFT26H250W03SR6 AFT26H250--24SR6
6
RF Device Data
Freescale Semiconductor, Inc.
VDD = 28 Vdc, IDQA = 689 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2496
4.07 - j10.7
4.00 + j9.61
2.03 - j4.57
17.4
51.8
151
54.1
-13
2590
7.57 - j11.9
6.72 + j10.7
2.00 - j4.75
17.6
51.7
147
53.2
-12
2690
15.7 - j9.50
12.9 + j8.73
2.00 - j5.11
17.6
51.6
143
52.4
-13
Max Output Power
P3dB
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1.92 - j4.78
15.2
52.5
179
54.9
-17
7.03 + j11.7
1.91 - j4.97
15.3
52.4
174
53.6
-17
14.9 + j9.37
1.92 - j5.34
15.3
52.3
170
52.4
-17
f
(MHz)
Zsource
()
Zin
()
2496
4.07 - j10.7
3.92 + j10.2
2590
7.57 - j11.9
2690
15.7 - j9.50
Zload
()
(2)
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 10. Carrier Side Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, IDQA = 689 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
f
(MHz)
Zsource
()
Zin
()
2496
4.07 - j10.7
4.07 + j10.0
Zload
()
(1)
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
4.82 - j3.58
19.7
49.9
97
64.0
-19
2590
7.57 - j11.9
6.62 + j11.4
3.74 - j2.51
20.0
49.6
92
62.6
-21
2690
15.7 - j9.50
13.3 + j9.45
3.36 - j2.87
19.9
49.5
90
61.2
-20
Max Drain Efficiency
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2496
4.07 - j10.7
3.77 + j10.6
4.53 - j2.90
17.8
50.4
111
64.0
-28
2590
7.57 - j11.9
6.80 + j12.2
3.67 - j2.58
18.0
50.3
108
62.7
-29
2690
15.7 - j9.50
15.2 + j9.96
3.36 - j2.87
17.9
50.2
105
61.2
-28
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 11. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
AFT26H250W03SR6 AFT26H250--24SR6
RF Device Data
Freescale Semiconductor, Inc.
7
VDD = 28 Vdc, VGSB = 0.4 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
Zsource
()
Zin
()
Zload (1)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2496
3.33 - j9.36
3.00 + j9.43
2.00 - j5.09
12.1
53.2
209
54.4
-22
2590
4.98 - j10.4
5.22 + j10.6
2.11 - j5.43
12.2
53.1
203
53.8
-22
2690
10.9 - j8.12
11.3 + j9.48
2.35 - j6.10
12.1
52.9
196
52.8
-20
Max Output Power
P3dB
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
1.99 - j5.35
9.9
53.9
243
54.3
-28
5.76 + j11.2
2.11 - j5.74
10.0
53.7
236
53.0
-28
13.0 + j9.24
2.40 - j6.29
10.0
53.5
226
52.5
-26
f
(MHz)
Zsource
()
Zin
()
2496
3.33 - j9.36
3.14 + j9.86
2590
4.98 - j10.4
2690
10.9 - j8.12
Zload
()
(2)
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 12. Peaking Side Load Pull Performance — Maximum Power Tuning
VDD = 28 Vdc, VGSB = 0.4 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
4.22 - j3.35
13.3
51.6
144
64.3
-30
4.64 + j10.7
3.57 - j3.41
13.4
51.6
145
63.8
-30
10.5 + j10.4
3.29 - j3.86
13.1
51.6
143
62.4
-27
f
(MHz)
Zsource
()
Zin
()
2496
3.33 - j9.36
2.65 + j9.45
2590
4.98 - j10.4
2690
10.9 - j8.12
Zload
()
(1)
Max Drain Efficiency
P3dB
f
(MHz)
Zsource
()
Zin
()
Zload (2)
()
Gain (dB)
(dBm)
(W)
D
(%)
AM/PM
()
2496
3.33 - j9.36
2.81 + j9.82
3.97 - j3.62
11.2
52.3
171
64.6
-38
2590
4.98 - j10.4
5.16 + j11.3
3.50 - j3.54
11.3
52.2
167
63.7
-38
2690
10.9 - j8.12
12.3 + j10.3
3.17 - j3.92
11.1
52.1
163
61.8
-35
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin
= Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Figure 13. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning
Input Load Pull
Tuner and Test
Circuit
Output Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin
Zload
AFT26H250W03SR6 AFT26H250--24SR6
8
RF Device Data
Freescale Semiconductor, Inc.
P1dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 2590 MHz
--1
--1
48
47.5
48.5
49
E
50
--3
51
--4
50.5
51.5
P
--5
--6
--2
49.5
IMAGINARY ()
IMAGINARY ()
--2
1
1.5
62
60
--4
2.5
3
3.5
REAL ()
4
4.5
--6
5
58
P
--5
2
48
52
50
46
1
1.5
2
54
2.5
--1
3
3.5
REAL ()
4
4.5
5
--1
--28
20.5
--2
--22
E
20
--3
19.5
--4
18.5
P
--5
17
16.5
1
1.5
19
--20
--3
2
--18
--4
3
3.5
REAL ()
--14
P
--12
18
2.5
E
--16
--5
17.5
--26
--24
--2
IMAGINARY ()
IMAGINARY ()
56
Figure 15. P1dB Load Pull Efficiency Contours (%)
Figure 14. P1dB Load Pull Output Power Contours (dBm)
--6
E
--3
4
4.5
5
Figure 16. P1dB Load Pull Gain Contours (dB)
NOTE:
--6
1
1.5
2
2.5
3
3.5
REAL ()
4
4.5
5
Figure 17. P1dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT26H250W03SR6 AFT26H250--24SR6
RF Device Data
Freescale Semiconductor, Inc.
9
P3dB -- TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 2590 MHz
--1
--1
49
48.5
49.5
50
E
--3
51.5
46
--2
51
IMAGINARY ()
IMAGINARY ()
--2
50.5
--4
50
48
62
52
--3
54
--4
52
--5
--6
60
--5
P
1
1.5
2
2.5
E
3
3.5
REAL ()
4
4.5
--6
5
P
1
1.5
58
2
2.5
56
3
3.5
REAL ()
4
54
4.5
5
Figure 19. P3dB Load Pull Efficiency Contours (%)
Figure 18. P3dB Load Pull Output Power Contours (dBm)
--1
--1
18.5
--2
18
E
--3
--4
15.5
15
--5
--6
17
16.5
IMAGINARY ()
IMAGINARY ()
--2
17.5
--4
2
2.5
3
3.5
REAL ()
4
4.5
5
Figure 20. P3dB Load Pull Gain Contours (dB)
NOTE:
--6
E
--22
--5
14.5
1.5
--3
--30
--28
--26
--24
16
P
1
--32
--20
P
--18
--16
1
1.5
2
2.5
3
3.5
REAL ()
4
4.5
5
Figure 21. P3dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT26H250W03SR6 AFT26H250--24SR6
10
RF Device Data
Freescale Semiconductor, Inc.
P1dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 2590 MHz
--2
49
49.5
50.5
50
IMAGINARY ()
--3
51
--3
51.5
E
52
--4
IMAGINARY ()
--2
52.5
--5
53
E
--4
62
--5
P
60
P
--6
58
--6
48
--7
1.5
1
2
2.5
3
3.5
REAL ()
4
4.5
--7
5
1
1.5
2
50
2.5
--2
3
3.5
REAL ()
4
4.5
5
--2
--36
--3
--34
--32
--3
E
13
--4
12.5
--5
--6
1
10.5
12
11.5
10
11
1.5
--28
--4
--26
--5
P
--24
P
--6
2
2.5
3
3.5
REAL ()
--30
E
IMAGINARY ()
IMAGINARY ()
52
Figure 23. P1dB Load Pull Efficiency Contours (%)
Figure 22. P1dB Load Pull Output Power Contours (dBm)
--7
56
54
4
4.5
5
Figure 24. P1dB Load Pull Gain Contours (dB)
NOTE:
--7
--22
1
1.5
2
2.5
3
3.5
REAL ()
4
4.5
5
Figure 25. P1dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT26H250W03SR6 AFT26H250--24SR6
RF Device Data
Freescale Semiconductor, Inc.
11
P3dB -- TYPICAL PEAKING SIDE LOAD PULL CONTOURS — 2590 MHz
51
50.5
50
--3
IMAGINARY ()
--2
49.5
51.5
52
52.5
--4
53
--5
53.5
P
--6
--7
--3
E
IMAGINARY ()
--2
1.5
1
2
--4
2.5
3
3.5
REAL ()
4
4.5
--7
5
--2
--3
--3
IMAGINARY ()
E
11
--4
10.5
10
9.5
--6
8
--7
1
8.5
P
60
P
48 50
1
1.5
2
52
2.5
54
58
56
3
3.5
REAL ()
--42
2
3
3.5
REAL ()
4
4.5
5
Figure 28. P3dB Load Pull Gain Contours (dB)
NOTE:
5
--38
--36
--4
--34
--32
--5
--30
P
--6
2.5
4.5
--40
E
--28
9
1.5
4
Figure 27. P3dB Load Pull Efficiency Contours (%)
--2
--5
62
--5
--6
Figure 26. P3dB Load Pull Output Power Contours (dBm)
IMAGINARY ()
E
--7
--26
1
1.5
2
2.5
3
3.5
REAL ()
4
4.5
5
Figure 29. P3dB Load Pull AM/PM Contours ()
P
= Maximum Output Power
E
= Maximum Drain Efficiency
Gain
Drain Efficiency
Linearity
Output Power
AFT26H250W03SR6 AFT26H250--24SR6
12
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
AFT26H250W03SR6 AFT26H250--24SR6
RF Device Data
Freescale Semiconductor, Inc.
13
AFT26H250W03SR6 AFT26H250--24SR6
14
RF Device Data
Freescale Semiconductor, Inc.
AFT26H250W03SR6 AFT26H250--24SR6
RF Device Data
Freescale Semiconductor, Inc.
15
AFT26H250W03SR6 AFT26H250--24SR6
16
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
 .s2p File
Development Tools
 Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Nov. 2013
Description
 Initial Release of Data Sheet
AFT26H250W03SR6 AFT26H250--24SR6
RF Device Data
Freescale Semiconductor, Inc.
17
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AFT26H250W03SR6 AFT26H250--24SR6
Document Number: AFT26H250W03S_24S
Rev.
18 0, 11/2013
RF Device Data
Freescale Semiconductor, Inc.
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