28LV010 3.3V 1 Megabit (128K x 8-Bit) EEPROM 28LV010 FEATURES: DESCRIPTION: • 3.3V low voltage operation 128k x 8 Bit EEPROM • RAD-PAK® radiation-hardened against natural space radiation • Total dose hardness: - > 100 krad (Si), depending upon space mission • Excellent Single event effects @ 25°C - SEL > 120 MeV cm2/mg (Device) - SEU > 85 MeV cm2/mg(Memory Cells) - SEU > 18 MeV cm2/mg (Write Mode) - SET > 40 MeV cm2/mg (Read Mode) • Package: - 32 Pin RAD-PAK® flat pack - 32 Pin RAD-PAK® DIP - JEDEC-approved byte-wide pinout • Address Access Time: - 200, 250 ns maximum access times available • High endurance: - 10,000 erase/write (in Page Mode) - 10-year data retention • Page write mode: - 1 to 128 bytes • Automatic programming - 15 ms automatic page/byte write • Low power dissipation - 20 mW/MHz active current (typ.) - 72 µW standby (maximum) • Standard JEDEC package width Maxwell Technologies’ 28LV010 high density, 3.3V, 1 Megabit EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28LV010 is capable of in-system electrical Byte and Page programmability. It has a 128-Byte Page Programming function to make its erase and write operations faster. It also features Data Polling and a Ready/Busy signal to indicate the completion of erase and programming operations. In the 28LV010, hardware data protection is provided with the RES pin, in addition to noise protection on the WE signal and write inhibit on power on and off. Meanwhile, software data protection is implemented using the JEDEC-optional standard algorithm. The 28LV010 is designed for high reliability in the most demanding space applications. Maxwell Technologies' patented RAD-PAK® packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, RAD-PAK® provides greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up to Class S. 07.12.2013 Rev 9 (858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com All data sheets are subject to change without notice 1 ©2013 Maxwell Technologies All rights reserved. Memory Logic Diagram 28LV010 3.3V 1 Megabit (128K x 8-Bit) EEPROM TABLE 1. 28LV010 PINOUT DESCRIPTION PIN SYMBOL 12-5, 27, 26, 23, 25, A0-A16 4, 28, 3, 31, 2 13-15, 17-21 DESCRIPTION Address I/O0 - I/O7 Input/Output 24 OE Output Enable 22 CE Chip Enable 29 WE Write Enable 32 VCC Power Supply 16 VSS Ground 1 RDY/BUSY Ready/Busy 30 RES Reset Memory TABLE 2. 28LV010 ABSOLUTE MAXIMUM RATINGS PARAMETER Supply Voltage (Relative to Vss) SYMBOL MIN VCC -0.6 -0.5 TYP 1 MAX UNIT 7.0 V 7.0 V Input Voltage (Relative to Vss) VIN Package Weight RP 7.38 RT 2.69 RD 10.97 Thermal Impedence FJC 2.17 Operating Temperature Range TOPR -55 125 °C Storage Temperature Range TSTG -65 150 °C Grams °C/W 1. VIN min = -3.0 V for pulse width < 50 ns. TABLE 3. DELTA LIMITS1 PARAMETER VARIATION2 ICC1 ±10% ICC2 ±10% ICC3A ±10% ICC3B ±10% 1. Parameters are measured and recorded as Deltas per MIL-STD-883 for Class S Devices 2. Specified in Table 6 07.12.2013 Rev 9 All data sheets are subject to change without notice 2 ©2013 Maxwell Technologies All rights reserved. 28LV010 3.3V 1 Megabit (128K x 8-Bit) EEPROM TABLE 4. 28LV010 RECOMMENDED OPERATING CONDITIONS PARAMETER SYMBOL MIN MAX UNIT Supply Voltage VCC 3.0 3.6 V Input Voltage VIL VIH VH -0.3 1 2.0 2 VCC-0.5 0.8 VCC+0.3 VCC +1 V TOPR -55 +125 °C SYMBOL MIN MAX UNIT CIN -- 6 pF COUT -- 12 pF RES_PIN Operating Temperature Range 1. VIL min = -1.0 V for pulse width < 50 ns. 2. VIH min = 2.2 V for VCC = 3.6 V. TABLE 5. 28LV010 CAPACITANCE (TA = 25°C, F = 1MHZ) PARAMETER Output Capacitance: VOUT = 0V 1 Memory Input Capacitance: VIN = 0V 1 1. Guaranteed by design. TABLE 6. 28LV010 DC ELECTRICAL CHARACTERISTICS (VCC = 3.3V ± 0.3, TA = -55 TO +125°C UNLESS OTHERWISE SPECIFIED) PARAMETER TEST CONDITIONS SYMBOL SUBGROUPS MIN MAX UNIT ILI 1, 2, 3 -- 21 µA Output Leakage Current VCC = 3.6V, VOUT = 3.6V/0.4V ILO 1, 2, 3 -- 2 µA Standby VCC Current CE = VCC CE = VIH ICC1 ICC2 1, 2, 3 --- 20 1 µA mA Operating VCC Current IOUT = 0mA, Duty = 100%, Cycle = 1 µs @ VCC = 3.3V IOUT = 0mA, Duty = 100%, Cycle = 200 ns @ VCC = 3.3V ICC3 1, 2, 3 --- 6 Input Leakage Current VCC = 3.6V, VIN = 3.6V mA 15 Input Voltage VIL VIH VH 1, 2, 3 -2.02 VCC-0.5 0.8 --- V Output Voltage3 VOL VOH VOH 1, 2, 3 -VCC x 0.8 VCC- 0.3 0.4 --- V IOL = 2.1 mA IOH = - 0.4 mA IOH = - 0.1 mA 1. ILI on RES = 100 uA max. 2. VIH min = 2.2V for VCC = 3.6V. 3. Rdy/Bsy is an open collector output. 07.12.2013 Rev 9 All data sheets are subject to change without notice 3 ©2013 Maxwell Technologies All rights reserved. 28LV010 3.3V 1 Megabit (128K x 8-Bit) EEPROM TABLE 7. 28LV010 AC CHARACTERISTICS FOR READ OPERATION1 (VCC = 3.3V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED) PARAMETER TEST CONDITIONS Address Access Time -200 -250 CE = OE = VIL, WE = VIH Chip Enable Access Time -200 -250 OE = VIL, WE = VIH Output Enable Access Time -200 -250 CE = VIL, WE = VIH SYMBOL SUBGROUPS tACC 9, 10, 11 tCE tOE tOH Output Disable to High-Z2 -200 -250 tDF CE = VIL, WE = VIH Output Disable to High-Z -200 -250 CE =OE= VIL, WE = VIH RES to Output Delay 3 -200 -250 CE = OE = VIL WE = VIH tDFR tRR MAX --- 200 250 --- 200 250 0 0 110 120 0 0 --- 0 0 50 50 0 0 300 350 0 0 525 600 UNIT ns 9, 10, 11 ns 9, 10, 11 ns 9, 10, 11 ns 9, 10, 11 ns 9, 10, 11 Memory Output Hold to Address Change CE = OE = VIL, WE = VIH -200 -250 MIN ns 9, 10, 11 ns 1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20 ns; output load - 1 TTL gate + 100 pF (including scope and jig); reference levels for measuring timing - 0.8V/1.8V. 2. tDF and tDFR is defined as the time at which the output becomes an open circuit and data is no longer driven. 3. Guaranteed by design. 07.12.2013 Rev 9 All data sheets are subject to change without notice 4 ©2013 Maxwell Technologies All rights reserved. 28LV010 3.3V 1 Megabit (128K x 8-Bit) EEPROM TABLE 8. 28LV010 AC ELECTRICAL CHARACTERISTICS FOR ERASE AND WRITE OPERATIONS (VCC = 3.3V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED) PARAMETER SUBGROUPS Address Setup Time -200 -250 tAS 9, 10, 11 Chip Enable to Write Setup Time (WE controlled) -200 -250 tCS Write Pulse Width (CE controlled) -200 -250 tCW Write Pulse Width (WE controlled) -200 -250 tWP Address Hold Time -200 -250 tAH Data Setup Time -200 -250 tDS Data Hold Time -200 -250 tDH Chip Enable Hold Time (WE controlled) -200 -250 tCH Write Enable to Write Setup Time (CE controlled) -200 -250 tWS Write Enable Hold Time (CE controlled) -200 -250 tWH Output Enable to Write Setup Tim -200 -250 tOES Output Enable Hold Time -200 -250 tOEH Write Cycle Time 1,2 -200 -250 tWC 07.12.2013 Rev 9 MIN MAX 0 0 --- 0 0 --- 200 250 --- 200 250 --- 125 150 --- 100 100 --- 10 10 --- 0 0 --- 0 0 --- 0 0 --- 0 0 --- 0 0 --- --- 15 15 UNIT ns 9, 10, 11 ns 9, 10, 11 ns 9, 10, 11 ns 9, 10, 11 ns 9, 10, 11 Memory SYMBOL ns 9, 10, 11 ns 9, 10, 11 ns 9, 10, 11 ns 9, 10, 11 ns 9, 10, 11 ns 9, 10, 11 ns 9, 10, 11 ms All data sheets are subject to change without notice 5 ©2013 Maxwell Technologies All rights reserved. 28LV010 3.3V 1 Megabit (128K x 8-Bit) EEPROM TABLE 8. 28LV010 AC ELECTRICAL CHARACTERISTICS FOR ERASE AND WRITE OPERATIONS (VCC = 3.3V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED) PARAMETER SUBGROUPS Byte Load Cycle -200 -250 tBLC 9, 10, 11 Data Latch Time2 -200 -250 tDL Byte Load Window 2 -200 -250 tBL Time to Device Busy -200 -250 tDB Write Start Time -200 -250 tDW RES to Write Setup Time2 -200 -250 tRP VCC to RES Setup Time 2 -200 -250 tRES MIN MAX 1 1 30 30 700 750 - 100 100 --- 100 120 --- 150 250 --- 100 100 --- 1 1 --- UNIT µs 9, 10, 11 ns 9, 10, 11 µs 9, 10, 11 ns 9, 10, 11 ns 9, 10, 11 Memory SYMBOL µs 9, 10, 11 µs 1. tWC must be longer than this value unless polling techniques or RDY/BSY are used. This device automatically completes the internal write operation within this value. 2. Guaranteed by design. TABLE 9. 28LV010 MODE SELECTION1,2 MODE CE OE WE RES RDY/BUSY I/O Read VIL VIL VIH VH High-Z DOUT Standby VIH X X X High-Z High-Z Write VIL VIH VIL VH High-Z --> VOL DIN Deselect VIL VIH VIH VH High-Z High-Z Write Inhibit X X VIH X -- -- X VIL X X -- -- Data Polling VIL VIL VIH VH VOL Data Out (I/O7) Program X X X VIL High-Z High-Z 1. X = Don’t care. 2. Refer to the recommended DC operating conditions. 07.12.2013 Rev 9 All data sheets are subject to change without notice 6 ©2013 Maxwell Technologies All rights reserved. 28LV010 3.3V 1 Megabit (128K x 8-Bit) EEPROM FIGURE 1. READ TIMING WAVEFORM Memory 07.12.2013 Rev 9 All data sheets are subject to change without notice 7 ©2013 Maxwell Technologies All rights reserved. 28LV010 3.3V 1 Megabit (128K x 8-Bit) EEPROM FIGURE 2. BYTE WRITE TIMING WAVEFORM(1) (WE CONTROLLED) Memory 07.12.2013 Rev 9 All data sheets are subject to change without notice 8 ©2013 Maxwell Technologies All rights reserved. 28LV010 3.3V 1 Megabit (128K x 8-Bit) EEPROM FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED) Memory 07.12.2013 Rev 9 All data sheets are subject to change without notice 9 ©2013 Maxwell Technologies All rights reserved. 28LV010 3.3V 1 Megabit (128K x 8-Bit) EEPROM FIGURE 4. PAGE WRITE TIMING WAVEFORM(1) (WE CONTROLLED) Memory 07.12.2013 Rev 9 All data sheets are subject to change without notice 10 ©2013 Maxwell Technologies All rights reserved. 28LV010 3.3V 1 Megabit (128K x 8-Bit) EEPROM FIGURE 5. PAGE WRITE TIMING WAVEFORM(2) (CE CONTROLLED) Memory FIGURE 6. SOFTWARE DATA PROTECTION TIMING WAVEFORM(1) (IN PROTECTION MODE) 07.12.2013 Rev 9 All data sheets are subject to change without notice 11 ©2013 Maxwell Technologies All rights reserved. 28LV010 3.3V 1 Megabit (128K x 8-Bit) EEPROM FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM(2) (IN NON-PROTECTION MODE) FIGURE 8. DATA POLLING TIMING WAVEFORM Memory 07.12.2013 Rev 9 All data sheets are subject to change without notice 12 ©2013 Maxwell Technologies All rights reserved. 28LV010 3.3V 1 Megabit (128K x 8-Bit) EEPROM FIGURE 9. TOGGLE BIT WAVEFORM This application note describes the programming procedures for the EEPROM modules and with details of various techniques to preserve data protection. Automatic Page Write Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle, and allows the undefined data within 128 bytes to be written corresponding to the undefined address (A0 to A6). Loading the first byte of data, the data load window opens 30 µs for the second byte. In the same manner each additional byte of data can be loaded within 30µs. In case CE and WE are kept high for 100µs after data input, EEPROM enters erase and write mode automatically and only the input data are written into the EEPROM. WE CE Pin Operation During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of WE or CE. Data Polling Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a write cycle, an inversion of the last byte of data to be loaded outputs from I/O 7 to indicate that the EEPROM is performing a write operation. RDY/Busy Signal RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal has high impedance except in write cycle and is lowered to VOL after the first write signal. At the-end of a write cycle, the RDY/Busy signal changes state to high impedance. 07.12.2013 Rev 9 All data sheets are subject to change without notice 13 ©2013 Maxwell Technologies All rights reserved. Memory EEPROM APPLICATION NOTES 28LV010 3.3V 1 Megabit (128K x 8-Bit) EEPROM RES Signal When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping RES low when VCC is switched. RES should be high during read and programming because it doesn’t provide a latch function. Data Protection 1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation. During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mistake. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20 ns or less in programming mode. Be careful not to allow noise of a width of more than 20 ns on the control pins. 2. Data Protection at VCC on/off 07.12.2013 Rev 9 All data sheets are subject to change without notice 14 ©2013 Maxwell Technologies All rights reserved. Memory To protect the data during operation and power on/off, the EEPROM has the internal functions described below. 28LV010 3.3V 1 Megabit (128K x 8-Bit) EEPROM When VCC is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable state during VCC on/off by using a CPU reset signal to RES pin. RES should be kept at VSS level when VCC is turned on or off. The EEPROM breaks off programming operation when RES become low, programming operation doesn’t finish correctly in case that RES falls low during programming operation. RES should be kept high for 10 ms after the last data input. Memory 15ms min 3. Software Data Protection The software data protection function is to prevent unintentional programming caused by noise generated by external circuits. In software data protection mode, 3 bytes of data must be input before write data as follows. These bytes can switch the nonprotection mode to the protection mode. Software data protection mode can be canceled by inputting the following 6 bytes. Then, the EEPROM turns to the non-protection mode and can write data normally. However, when the data is input in the canceling cycle, the data cannot be written. 07.12.2013 Rev 9 All data sheets are subject to change without notice 15 ©2013 Maxwell Technologies All rights reserved. 28LV010 3.3V 1 Megabit (128K x 8-Bit) EEPROM Memory 32-PIN RAD-PAK® FLAT PACKAGE SYMBOL DIMENSION MIN NOM MAX A 0.121 0.134 0.147 b 0.015 0.017 0.022 c 0.004 0.005 0.009 D -- 0.820 0.830 E 0.472 0.480 0.488 E1 -- -- 0.498 E2 0.304 0.310 -- E3 0.030 0.085 -- e 0.050BSC L 0.355 0.365 0.375 Q 0.020 0.035 0.045 S1 0.005 0.027 -- N 32 Note: All dimensions in inches Top and Bottom of the package is connected internally to ground. 07.12.2013 Rev 9 All data sheets are subject to change without notice 16 ©2013 Maxwell Technologies All rights reserved. 28LV010 3.3V 1 Megabit (128K x 8-Bit) EEPROM Memory 32 PIN RAD-TOLERANT FLAT PACK SYMBOL DIMENSION MIN NOM MAX A 0.095 0.109 0.125 b 0.015 0.017 0.022 c 0.004 0.005 0.009 D -- 0.820 0.830 E 0.472 0.480 0.488 E1 -- -- 0.498 E2 0.350 0.365 -- E3 0.030 0.085 -- e 0.050BSC L 0.355 0.365 0.375 Q 0.020 0.035 0.045 S1 0.005 0.027 -- N 32 Note: All Dimentions in Inches Top and Bottom of the package is connected internally to ground. 07.12.2013 Rev 9 All data sheets are subject to change without notice 17 ©2013 Maxwell Technologies All rights reserved. 28LV010 3.3V 1 Megabit (128K x 8-Bit) EEPROM Memory 32 PIN DUAL IN-LINE PACKAGE DIMENSION SYMBOL MIN NOM MAX A -- 0.152 0.225 b 0.014 0.018 0.026 b2 0.045 0.050 0.065 c 0.008 0.010 0.018 D -- 1.600 1.680 E 0.510 0.590 0.620 eA 0.600 BSC eA/2 0.300 BSC e 0.100 BSC L 0.135 0.145 0.155 Q 0.015 0.037 0.070 S1 0.005 0.025 -- S2 0.005 -- -- N 32 Note: All Dimentions in Inches Top and Bottom of the package is connected internally to ground. 07.12.2013 Rev 9 All data sheets are subject to change without notice 18 ©2013 Maxwell Technologies All rights reserved. 3.3V 1 Megabit (128K x 8-Bit) EEPROM 28LV010 Important Notice: These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. The specifications presented within these data sheets represent the latest and most accurate information available to date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no responsibility for the use of this information. Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems without express written approval from Maxwell Technologies. Any claim against Maxwell Technologies must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts. Memory 07.12.2013 Rev 9 All data sheets are subject to change without notice 19 ©2013 Maxwell Technologies All rights reserved. 28LV010 3.3V 1 Megabit (128K x 8-Bit) EEPROM Product Ordering Options Model Number 28LV010 XX X X -XX Option Details Feature Access Time Screening Flow Monolithic S = Maxwell Class S B = Maxwell Class B I = Industrial (testing @ -55°C, +25°C, +125°C) E = Engineering (testing @ +25°C) Memory Package 20 = 200 ns 25 = 250 ns D = Dual In-line Package (DIP)1 F = Flat Pack Radiation Feature2 RP = RAD-PAK® package RT = No Radiation Guarantee Class E and I Only RT1 = 10 Krad (Read and Write) RT2R = 25 Krad (Read); 15 Krad (Write) RT4R = 40 Krad (Read); 15 Krad (Write) RT6R = 60 Krad (Read); 15 Krad (Write) Base Product Nomenclature 3.3V 1 Megabit (128K x 8-Bit) EEPROM 1.) Standard Product Screening Flow MIL-STD-883, Method 2001, Constant Acceleration :For DIP package type Constant Acceleration is 3000g’s. 2.) Products are manufactured and screened to Maxwell Technologies’ self-defined Class B and Class S. 3.) The device will meet the specified read mode TID level, at the die level, if it is not written to during irradiation. Writing to the device during irradiation will reduce the device’s TID tolerance to the specified write mode TID level. Writing to the device before irradiation does not alter the device’s read mode TID level. 07.12.2013 Rev 9 All data sheets are subject to change without notice 20 ©2013 Maxwell Technologies All rights reserved.