79LV0408 Low Voltage 4 Megabit (512k x 8-bit) EEPROM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 Logic Diagram Memory FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK® radiation-hardened against natural space radiation • Total dose hardness: - > 100 krad (Si), depending upon space mission • Excellent Single Event Effects - SEL > 120 MeV/mg/cm2 - SEU > 90 MeV/mg/cm2 read mode - SEU = 18 MeV/mg/cm2 write mode • Package: • - 40 pin RAD-PAK® flat pack • - 40 pin X-Ray PakTM flat pack • - 40 pin Rad-Tolerant flat pack • High speed: -200 and 250 ns access times available • Data Polling and Ready/Busy signal • Software data protection • Write protection by RES pin • High endurance - 10,000 erase/write (in Page Mode), - 10 year data retention • Page write mode: 1 to 128 byte page • Low power dissipation - 88 mW/MHz active mode - 440 µ W standby mode Maxwell Technologies’ 79LV0408 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK® MCM packaging technology, the 79LV0408 is the first radiationhardened 4 Megabit MCM EEPROM for space applications. The 79LV0408 uses four 1 Megabit high-speed CMOS die to yield a 4 Megabit product. The 79LV0408 is capable of in-system electrical Byte and Page programmability. It has a 128 bytes Page Programming function to make its erase and write operations faster. It also features Data Polling and a Ready/ Busy signal to indicate the completion of erase and programming operations. In the 79LV0408, hardware data protection is provided with the RES pin, in addition to noise protection on the WE signal. Software data protection is implemented using the JEDEC optional standard algorithm. Maxwell Technologies' patented RAD-PAK® packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, the RAD-PAK® package provides greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up to Maxwell Technologies self-defined Class K. 01.11.05 Rev 7 (858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com All data sheets are subject to change without notice 1 ©2005 Maxwell Technologies All rights reserved. 79LV0408 Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM TABLE 1. 79LV0408 PIN DESCRIPTION PIN SYMBOL DESCRIPTION 16-9, 32-31, 28, 30, 8, 33, 7, 36, 6 A0 to A16 17-19, 22-26 I/O0 to I/O7 29 OE 2, 3, 39, 38 CE1-4 34 WE Write Enable 1, 27, 40 VCC Power Supply 4, 20, 21, 37 VSS Ground 5 RDY/BUSY 35 RES Address Input Data Input/Output Output Enable Chip Enable 1 through 4 Ready/Busy Reset Memory TABLE 2. 79LV0408 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL MIN MAX UNIT Supply Voltage VCC -0.6 7.0 V Input Voltage VIN -0.51 7.0 V Package Weight RP 23 Grams RT 10 Tjc 7.3 ° C/W Thermal Resistance ( RP Package) Operating Temperature Range TOPR -55 125 °C Storage Temperature Range TSTG -65 150 °C 1. VIN MIN = -3.0V FOR PULSE WIDTH <50NS. TABLE 3. 79LV0408 RECOMMENDED OPERATING CONDITIONS PARAMETER SYMBOL MIN MAX UNIT Supply Voltage VCC 3.0 3.6 V Input Voltage VIL VIH VH -0.31 2.2 VCC-0.5 0.8 VCC +0.3 VCC +1 V V V TC -55 125 °C RES_PIN Case Operating Temperature 1. VIL min = -1.0V for pulse width < 50 ns 01.11.05 Rev 7 All data sheets are subject to change without notice 2 ©2005 Maxwell Technologies All rights reserved. 79LV0408 Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM TABLE 4. 79LV0408 CAPACITANCE1 (TA = 25 ° C, f = 1 MHz) PARAMETER SYMBOL Input Capacitance: VIN = 0 V WE CE1-4 OE A0-16 1 MIN MAX ----- 24 6 24 24 UNIT pf CIN Output Capacitance: VOUT = 0 V 1 COUT 48 pF 1. Guaranteed by design. TABLE 5. DELTA PARAMETERS PARAMETER CONDITION + 10% of value in Table 6 ICC2 + 10% of value in Table 6 ICC3 + 10% of value in Table 6 ICC4 + 10% of value in Table 6 Memory ICC1 TABLE 6. 79LV0408 DC ELECTRICAL CHARACTERISTICS (VCC = 3.3V ±10%, TA = -55 TO +125°C) PARAMETER TEST CONDITION Input Leakage Current VCC = 5.5V, VIN = 5.5V1 SYMBOL SUBGROUPS IIL 1, 2, 3 MIN MAX UNITS µA CE1-4 -- 21 OE, WE -- 8 A0-16 -- 8 -- 8 µA Output Leakage Current VCC = 5.5V, VOUT = 5.5V/0.4V ILO Standby VCC Current CE = VCC ICC1 -- 80 µA CE = VIH ICC2 -- 4 mA IOUT = 0mA, Duty = 100%, Cycle = 1µ s at VCC = 5.5V ICC3 1, 2, 3 -- 15 mA IOUT = 0mA, Duty = 100%, Cycle = 150ns at VCC = 5.5V ICC4 1, 2, 3 -- 50 VIL 1, 2, 3 -- 0.8 VIH 2.2 -- VH VCC -0.5 -- -- 0.4 2.4 -- Operating VCC Current2 Input Voltage RES_PIN Output Voltage 1, 2, 3 IOL = 2.1 mA VOL IOH = -0.4 mA VOH 01.11.05 Rev 7 1, 2, 3 V V All data sheets are subject to change without notice 3 ©2005 Maxwell Technologies All rights reserved. 79LV0408 Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM 1. ILI on RES = 100 uA max. 2. Only on CE\ Active. TABLE 7. 79LV0408 AC ELECTRICAL CHARACTERISTICS FOR READ OPERATIONS1 (VCC = 3.3V ±10%, TA = -55 TO +125°C) PARAMETER SUBGROUPS Address Access Time CE = OE = VIL, WE = VIH -200 -250 tACC 9, 10, 11 Chip Enable Access Time OE = VIL, WE = VIH -200 -250 tCE Output Enable Access Time CE = VIL, WE = VIH -200 -250 tOE Output Hold to Address Change CE = OE = VIL, WE = VIH -200 -250 tOH Output Disable to High-Z2 CE = VIL, WE = VIH -200 -250 tDF CE = OE = VIL, WE = VIH -200 -250 tDFR RES to Output Delay CE = OE = VIL, WE = VIH 3 -200 -250 tRR MIN MAX --- 200 250 0 0 200 250 0 0 110 120 0 0- --- 0 0 60 60 0 0 300 350 --- 520 550 UNIT ns 9, 10, 11 ns 9, 10, 11 ns 9, 10, 11 Memory SYMBOL ns 9, 10, 11 ns 9, 10, 11 9, 10, 11 ns 1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including scope and jig); reference levels for measuring timing - 0.8V/1.8V. 2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven. 3. Guaranteed by design. TABLE 8. 79LV0408 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATIONS (VCC = 3.3V ±10%, TA = -55 TO +125°C) PARAMETER Address Setup Time -200 -250 SYMBOL SUBGROUPS tAS 9, 10, 11 01.11.05 Rev 7 MIN1 MAX 0 0 --- UNIT ns All data sheets are subject to change without notice 4 ©2005 Maxwell Technologies All rights reserved. 79LV0408 Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM TABLE 8. 79LV0408 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATIONS (VCC = 3.3V ±10%, TA = -55 TO +125°C) PARAMETER Chip Enable to Write Setup Time (WE Controlled) -200 -250 Write Pulse WidthCE Controlled -200 -250 WE Controlled -200 -250 SYMBOL SUBGROUPS tCS 9, 10, 11 MIN1 MAX 0 0 --- 200 250 --- 200 250 --- 125 150 --- 100 100 --- 10 10 --- 0 0 --- 0 0 --- 0 0 --- 0 0 --- 0 0 --- --- 15 15 700 750 --- 100 100 --- ns ns 9, 10, 11 tCW tWP tAH Data Setup Time -200 -250 tDS Data Hold Time -200 -250 tDH Chip Enable Hold Time (WE Controlled) -200 -250 tCH Write Enable to Write Setup Time (CE Controlled) -200 -250 tWS Write Enable Hold Time (CE Controlled) -200 -250 tWH Output Enable to Write Setup Time -200 -250 tOES Output Enable Hold Time -200 -250 tOEH Write Cycle Time2 -200 -250 tWC Data Latch Time -200 -250 tDL Byte Load Window -200 -250 tBL 01.11.05 Rev 7 9, 10, 11 ns 9, 10, 11 ns 9, 10, 11 Memory Address Hold Time -200 -250 UNIT ns 9, 10, 11 ns 9, 10, 11 ns 9, 10, 11 ns 9, 10, 11 ns 9, 10, 11 ns 9, 10, 11 ms 9, 10, 11 ns 9, 10, 11 µs All data sheets are subject to change without notice 5 ©2005 Maxwell Technologies All rights reserved. 79LV0408 Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM TABLE 8. 79LV0408 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATIONS (VCC = 3.3V ±10%, TA = -55 TO +125°C) SUBGROUPS Byte Load Cycle -200 -250 tBLC 9, 10, 11 Time to Device Busy -200 -250 tDB Write Start Time3 -200 -250 tDW RES to Write Setup Time -200 -250 tRP VCC to RES Setup Time4 -200 -250 tRES MIN1 MAX 1 1 --- 150 150 --- 150 150 --- 100 100 --- 1 1 --- UNIT µs 9, 10, 11 ns 9, 10, 11 ns 9, 10, 11 µs 9, 10, 11 µs 1. Use this divice in a longer cycle than this value. 2. tWC must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the internal write operation within this value. 3. Next read or write operation can be initiated after tDW if polling techniques or RDY/BUSY are used. 4. Guaranteed by design. TABLE 9. 79LV0408 MODE SELECTION 1, 2 CE 3 OE WE I/O RES RDY/BUSY Read VIL VIL VIH DOUT VH High-Z Standby VIH X X High-Z X High-Z Write VIL VIH VIL DIN VH High-Z --> VOL Deselect VIL VIH VIH High-Z VH High-Z Write Inhibit X X VIH -- X -- X VIL X -- X -- Data Polling VIL VIL VIH Data Out (I/O7) VH VOL Program X X X High-Z VIL High-Z PARAMETER 1. X = Don’t care. 2. Refer to the recommended DC operating conditions. 3. For CE1-4 only one CE can be used (“on”) at a time. 01.11.05 Rev 7 All data sheets are subject to change without notice 6 ©2005 Maxwell Technologies All rights reserved. Memory SYMBOL PARAMETER 79LV0408 Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM FIGURE 1. READ TIMING WAVEFORM Memory 01.11.05 Rev 7 All data sheets are subject to change without notice 7 ©2005 Maxwell Technologies All rights reserved. 79LV0408 Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM FIGURE 2. BYTE WRITE TIMING WAVEFORM(1) (WE CONTROLLED) Memory 01.11.05 Rev 7 All data sheets are subject to change without notice 8 ©2005 Maxwell Technologies All rights reserved. 79LV0408 Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM FIGURE 3. BYTE WRITE TIMING WAVEFORM (2) (CE CONTROLLED) Memory 01.11.05 Rev 7 All data sheets are subject to change without notice 9 ©2005 Maxwell Technologies All rights reserved. 79LV0408 Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM FIGURE 4. PAGE WRITE TIMING WAVEFORM(1) (WE CONTROLLED) Memory 01.11.05 Rev 7 All data sheets are subject to change without notice 10 ©2005 Maxwell Technologies All rights reserved. 79LV0408 Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM FIGURE 5. PAGE WRITE TIMING WAVEFORM(2) (CE CONTROLLED) Memory FIGURE 6. DATA POLLING TIMING WAVEFORM 01.11.05 Rev 7 All data sheets are subject to change without notice 11 ©2005 Maxwell Technologies All rights reserved. Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM 79LV0408 FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM(1) (IN PROTECTION MODE) FIGURE 8. SOFTWARE DATA PROTECTION TIMING WAVEFORM(2) (IN NON-PROTECTION MODE) Memory Toggle Bit Waveform EEPROM APPLICATION NOTES This application note describes the programming procedures for each EEPROM module (four in each MCM) and details of various techniques to preserve data protection. Automatic Page Write Page-mode write feature allows from 1 to 128 bytes of data to be written into the EEPROM in a single write cycle, and allows the undefined data within 128 bytes to be written corresponding to the undefined address (A0 to A6). Loading the first byte of data, the data load window opens 30 µ s for the second byte. In the same manner each additional byte of data can be loaded within 30 µ s. In case CE and WE are kept high for 100 µ s after data input, the EEPROM enters erase and write mode automatically and only the input data are written into the EEPROM. 01.11.05 Rev 7 All data sheets are subject to change without notice 12 ©2005 Maxwell Technologies All rights reserved. 79LV0408 Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM WE CE Pin Operation During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of WE or CE. Data Polling Data Polling function allows the status of the EEPROM to be determined. If the EEPROM is set to read mode during a write cycle, an inversion of the last byte of data to be loaded output is from I/O 7 to indicate that the EEPROM is performing a write operation. RDY/Busy Signal RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal has high impedance except in write cycle and is lowered to VOL after the first write signal. At the-end of a write cycle, the RDY/Busy signal changes state to high impedance. RES Signal Data Protection To protect the data during operation and power on/off, the EEPROM has the internal functions described below. 1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation. 01.11.05 Rev 7 All data sheets are subject to change without notice 13 ©2005 Maxwell Technologies All rights reserved. Memory When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping RES low when VCC is switched. RES should be kept high during read and programming because it doesn’t provide a latch function. 79LV0408 Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mistake. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its width is 20 ns or less in programming mode. Be careful not to allow noise of a width of more than 20ns on the control pins. 2. Data Protection at VCC on/off RES should be kept at VSS level when VCC is turned on or off. The EEPROM breaks off programming operation when RES becomes low, programming operation doesn’t finish correctly in case that RES falls low during programming operation. RES should be kept high for 10 ms after the last data input. 10mS min 3. Software Data Protection The software data protection function is to prevent unintentional programming caused by noise generated by external circuits. In software data protection mode, 3 bytes of data must be input before write data as follows. These bytes can switch the nonprotection mode to the protection mode. 01.11.05 Rev 7 All data sheets are subject to change without notice 14 ©2005 Maxwell Technologies All rights reserved. Memory When VCC is turned on or off, noise on the control pins generated by external circuits, such as CPUs, may turn the EEPROM to programming mode by mistake. To prevent this unintentional programming, the EEPROM must be kept in unprogrammable state during VCC on/off by using a CPU reset signal to RES pin. Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM 79LV0408 Software data protection mode can be canceled by inputting the following 6 bytes. Then, the EEPROM turns to the non-protection mode and can write data normally. However, when the data is input in the canceling cycle, the data cannot be written. Memory 01.11.05 Rev 7 All data sheets are subject to change without notice 15 ©2005 Maxwell Technologies All rights reserved. 79LV0408 Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM Pin #1 ID Memory 40 PIN RAD-PAK® PACKAGE DIMENSIONS DIMENSION SYMBOL MIN NOM MAX A 0.248 0.274 0.300 b 0.013 0.015 0.022 c 0.006 0.008 0.010 D -- 0.850 0.860 E 0.985 0.995 1.005 E1 -- -- 1.025 E2 0.890 0.895 -- E3 0.000 0.050 -- e 0.040 BSC L 0.380 0.390 0.400 Q 0.214 0.245 0.270 S1 0.005 0.038 -- N 40 F40-01 Note: All dimensions in inches 01.11.05 Rev 7 All data sheets are subject to change without notice 16 ©2005 Maxwell Technologies All rights reserved. 79LV0408 Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM Memory 40 PIN X-RAY-PAKTM FLAT PACKAGE DIMENSIONS DIMENSION SYMBOL MIN NOM MAX A 0.248 0.274 0.300 b 0.013 0.015 0.022 c 0.006 0.008 0.010 D 0.840 0.850 0.860 E 0.985 0.995 1.005 E2 -- 0.785 -- E3 -- 0.105 -- e 0.040 BSC L 0.340 0.350 0.400 Q 0.050 0.065 0.075 S1 -- 0.035 -- N 40 NOTE: All Dimensions in Inches 01.11.05 Rev 7 All data sheets are subject to change without notice 17 ©2005 Maxwell Technologies All rights reserved. 79LV0408 Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM Memory 40 PIN RAD-TOLERANT FLAT PACKAGE DIMENSIONS DIMENSION SYMBOL MIN NOM MAX A 0.202 0.224 0.246 b 0.013 0.015 0.022 c 0.006 0.008 0.010 D -- 0.850 0.860 E 0.985 0.995 1.005 E1 -- -- 1.025 E2 0.890 0.895 -- E3 0.000 0.050 -- e 0.040 BSC L 0.380 0.390 0.400 Q 0.190 0.220 0.270 S1 0.005 0.038 -- N 40 NOTE: All Dimensions in Inches 01.11.05 Rev 7 All data sheets are subject to change without notice 18 ©2005 Maxwell Technologies All rights reserved. Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM 79LV0408 Important Notice: These data sheets are created using the chip manufacturers published specifications. Maxwell Technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. The specifications presented within these data sheets represent the latest and most accurate information available to date. However, these specifications are subject to change without notice and Maxwell Technologies assumes no responsibility for the use of this information. Maxwell Technologies’ products are not authorized for use as critical components in life support devices or systems without express written approval from Maxwell Technologies. Any claim against Maxwell Technologies. must be made within 90 days from the date of shipment from Maxwell Technologies. Maxwell Technologies’ liability shall be limited to replacement of defective parts. Memory Product Ordering Options 01.11.05 Rev 7 All data sheets are subject to change without notice 19 ©2005 Maxwell Technologies All rights reserved. 79LV0408 Low Voltage 4 Megabit (512k x 8-bit) EEPROM MCM Model Number 79LV0408 XX F X -XX Option Details Feature 20 = 200 ns 25 = 250 ns Screening Flow Multi Chip Module (MCM)1 K = Maxwell Self-Defined Class K H = Maxwell Self-Defined Class H I = Engineering (testing @-55°C, +25°C and +125°C) E = Engineering (testing @ +25°C Package F = Flat Pack Radiation Feature RP = RAD-PAK® package RT1 = Guaranteed to 10 krad at die level RT2 = Guaranteed to 25 krad at die level RT4 = Guaranteed to 40 krad at die level XP = X-Ray Pak Base Product Nomenclature 4 Megabit (512k x 8-bit) EEPROM MCM Memory Access Time 1) Products are manufactured and screened to Maxwell Technologies self-defined Class H and Class K flows. 01.11.05 Rev 7 All data sheets are subject to change without notice 20 ©2005 Maxwell Technologies All rights reserved.