DTC114EUA(SOT 323)Rev.B

WILLAS
FM120-M
DTC114EUA THRU
NPN
Digital
Transistor
FM1200-M
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
Features
• Low profile surface mounted application in order to
better reverse leakage current and thermal resistance.
•
SOD-123H
SOT-323
board
space.
Pb-Freeoptimize
package
is available
Low power
loss, highcode
efficiency.
RoHS •product
for packing
suffix ”G”
• High current capability, low forward voltage drop.
Halogen
freesurge
product
for packing code suffix “H”
capability.
• High
Epoxy •meets
UL
94
V-0
flammability rating
Guardring for overvoltage protection.
Moisure
Sensitivity
Level
1
• Ultra high-speed switching.
Built-in•bias
resistors
enable
of an inverter circuit
Silicon
epitaxial
planar the
chip,configuration
metal silicon junction.
without• connecting
external
input resistors
Lead-free parts
meet environmental
standards of
The biasMIL-STD-19500
resistors consist
of thin-film resistors with complete
/228
product
for packing
code of
suffix
• RoHS
isolation
to allow
negative
biasing
the"G"
input. They also have the
Halogen
free product
for packing
code suffixparasitic
"H"
advantage
of almost
completely
eliminating
effects.
Mechanical
data
Only the
on/off conditions
need to be set for operation, making
device •design
Epoxy :easy
UL94-V0 rated flame retardant
•
Absolute •maximum
ratings
@SOD-123H
25к
Case : Molded
plastic,
Symbol
VCC
VIN
IO
Pd
Tj
Tstg
Parameter
Minper MIL-STD-750
Typ
Max
• Terminals :Plated
terminals, solderable
Supply voltage
--Method 2026
Input voltage
-10
current
• Output
Polarity
: Indicated by cathode band --Power dissipation
--• Mounting Position : Any
Junction temperature
--• Storage
Weighttemperature
: Approximated 0.011 gram
-55
50
--50
200
150
---
--40
100
----150
, Unit
V
V
mA
mW
ć
ć
.004(0.10)MIN.
0.071(1.8)
0.056(1.4)
.096(2.45)
.078(2.00)
•
0.012(0.3) Typ.
0.040(1.0)
.010(0.25)0.024(0.6)
.003(0.08)
0.031(0.8) Typ.
0.031(0.8) Typ.
.087(2.20)
.070(1.80)
Dimensions in inches and
(millimeters)
.054(1.35)
.045(1.15)
•
•
•
0.146(3.7)
0.130(3.3)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
1,1
*1'
287
1
.043(1.10)
.032(0.80)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase
half wave, 60Hz,@
resistive
Electrical
Characteristics
25к of inductive load.
.056(1.40)
For
capacitive
load,
derate
current
by 20%
Symbol
Parameter
Min
Typ
Max
Unit
.047(1.20)
--VI(off)
--V
0.5
Input voltage (VCC=5V, IO=100­A)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
RATINGS
----3.0
V
VI(on)
(VO=0.3V, IO=10mA)
Marking Code
13 V
14
15
16
18
10
115
120
VO(on)
Output voltage (I=
--0.1 12 0.3
O/II 10mA/0.5mA)
200.88 30mA
40
50
60
80
100
150
200
Maximum
Recurrent
Peak
Voltage
II =
Input
current
(VI Reverse
5V)
---VRRM --IO(off)
current (VCC
=
=50V, VI 0)
---VRMS --14 0.5
21­A
28
35
42
56
70
105
140
MaximumOutput
RMS Voltage
.004(0.10)MAX.
GI
DC current gain (VO=5V,
=
IO 5mA)
30
----Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
V
DC
R1
Input resistance
7.0
10
K¡
13
Average Forward
1.0
R2Maximum
/R1
Resistance
ratio Rectified Current
0.8 IO 1.0
1.2
Transition frequency
fT
--- 250
--MHz
.016(0.40)
Peak Forward
8.3f=100MHz)
ms single half sine-wave
(VO Surge
=10V,Current
IO=5mA,
30
IFSM
.008(0.20)
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
40
120
Dimensions in inches and (millimeters)
-55 to +150
-55 to +125
Suggested Solder
Pad Layout
- 65 to +175
TSTG
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
0.70
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
MARKING: 24
VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.700.90
0.9
0.85
0.5
0.92
10
1.90 mm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-0
0.65
0.65
2012-06
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTC114EUATHRU
NPN
Digital
Transistor
FM1200-M+
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Typical Characteristics
Features
excellent power dissipation offers
• Batch process design,
ON Characteristics
better reverse leakage current and thermal resistance.
=0.3V to
O
• Low profile surface mounted application in Vorder
optimize board space.
30• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
10
• Guardring for overvoltage protection.
• Ultra high-speed switching.
Ta=25℃
3• Silicon epitaxial planar chip, metal silicon junction.
100℃
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
1
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
VCC=5V
Ta=100℃
25℃
(mA)
3
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
IO
1
OUTPUT CURRENT
(V)
VI(ON)
INPUT VOLTAGE
OFF Characteristics
SOD-123H
10
100
0.071(1.8)
0.056(1.4)
0.3
0.1
Mechanical data
0.3
0.03
• Epoxy : UL94-V0 rated flame retardant
0.1• Case : Molded plastic, SOD-123H
0.1
1
10
100
3
30
0.3
,
• Terminals :Plated
terminals,
per MIL-STD-750
OUTPUT
CURRENT solderable
I
(mA)
0.01
0.0
0.040(1.0)
0.024(0.6)
0.031(0.8)
Typ.
0.4
O
0.8
1.2
INPUT VOLTAGE
VI(OFF)
1.6
0.031(0.8)
2.0 Typ.
(V)
Method 2026
• Polarity : Indicated by cathode band
: Any —— IO
• Mounting PositionVO(ON)
1
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
GI
1000
IO/II=20
——
IO
VO=5V
Ta=100℃
300
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
25℃
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
Maximum RMS Voltage
VRMS
14
Maximum DC Blocking Voltage
VDC
20
Maximum Average Forward Rectified Current
IO
IFSM
0.03
Peak 0.01
Forward Surge Current 8.3 ms single half sine-wave
10
OUTPUT CURRENT
Typical Thermal Resistance (Note 2)
30
IO
(mA)
CJ
Operating Temperature Range
CO
Storage
10 Temperature Range
TJ
——
VR
1
0.1
16
60
18
80
10
100
115
150
120
200
28
35
42
56
70
105
140
40
50
60
80
100
150
200
0.3
1.0
30
3
1
OUTPUT CURRENT
40
120
-55 to +125
10
IO
30
100
(mA)
-55 to +150
PD —— Ta
- 65 to +175
400
VF
(pF)
0.50
IR
@T A=125℃
CO
OUTPUT CAPACITANCE
3
15
50
350 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH
Maximum Average Reverse Current at @T A=25℃
6
300
250
POWER DISSIPATION
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
14
40
10
f=1MHz
Ta=25℃
CHARACTERISTICS
Rated DC Blocking Voltage
30
TSTG
Maximum
Forward Voltage at 1.0A DC
8
21
100
RΘJA
Typical Junction Capacitance (Note 1)
13
30
(mW)
3
superimposed on rated load (JEDEC method)
GI
SYMBOL FM120-MH FM130-MH
30 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
1
DC CURRENT GAIN
RATINGS
0.1
100
PD
OUTPUT VOLTAGE
VO(ON)
(V)
0.3 at 25℃ ambient temperature unless otherwise specified.
Ratings
Single phase half wave, 60Hz, resistive
of inductive load.
Ta=100℃
For capacitive load, derate current by 20%
25℃
4
2- Thermal
Resistance From Junction to Ambient
2
0.70
0.9
0.85
0.92
0.5
10
DTC114EUA
200
150
100
50
0
0
2012-06
2012-0
4
8
12
REVERSE BIAS VOLTAGE
16
VR
(V)
20
0
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃ )
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTC114EUATHRU
NPN
Digital
Transistor
FM1200-M+
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+
Features
Pb Free Product
PACKAGE
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
• High current capability,(1)low(2)forward voltage drop.
DTC114EUA –T
G
‐WS Tape& Reel: 3 Kpcs/Reel • High surge capability.
Note: (1)
Packing code, Tape & Reel Packing for overvoltage protection.
• Guardring
• Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction.
parts meet environmental standards of
• Lead-free
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified.
specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability load, derate current by 20%
For capacitive
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information Marking Code
12
13
14
15
16
18
10
115
120
contained are intended to provide a product description only. "Typical" parameters 20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
VRRM
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
use of any product or circuit. superimposed
on rated load (JEDEC method)
40
Typical Thermal Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
WILLAS products are not designed, intended or authorized for use in medical, -55
to
+125
-55 to +150
Operating Temperature Range
TJ
- 65 to +175
TSTG
life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.9
Maximum
Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
or indirectly cause injury or threaten a life without expressed written approval 0.5
Maximum Average Reverse Current at @T A=25℃
IR
of WILLAS. Customers using or selling WILLAS components for use in 10
@T A=125℃
Rated DC Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. Storage Temperature Range
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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