WILLAS DTC144EE

WILLAS
FM120-M+
DTC144EE THRU
NPN
Digital
Transistor
FM1200-M
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
Features
• Low profile surface mounted application in order to
better reverse leakage current and thermal resistance.
•
SOD-123H
SOT-523
board
Pb-Freeoptimize
package
isspace.
available
• Low power loss, high efficiency.
RoHS•product
for capability,
packing code
suffixvoltage
”G” drop.
High current
low forward
surge
capability.
• High
Halogen
free
product
for packing code suffix “H”
•
•
•
0.146(3.7)
0.130(3.3)
•
•
.067(1.70)
.059(1.50)
0.071(1.8)
.035(0.90)
.028(0.70)
Guardring
protection.
Epoxy•meets
UL for
94 overvoltage
V-0 flammability
rating
high-speed
switching.
• Ultra
Moisure
Sensitivity
Level
1
Silicon
epitaxialenable
planar the
chip,configuration
metal silicon junction.
Built-in• bias
resistors
of an inverter circuit
Lead-free
parts
meet
environmental
standards of
•
without connecting external input resistors
/228
The biasMIL-STD-19500
resistors consist
of thin-film resistors with complete
• RoHS product for packing code suffix "G"
isolation to allow negative biasing of the input. They also have the
Halogen free product for packing code suffix "H"
advantage of almost completely eliminating parasitic effects.
Mechanical
data
Only the on/off conditions need to be set for operation, making
Epoxy :easy
UL94-V0 rated flame retardant
device•design
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.012(0.3) Typ.
0.056(1.4)
.014(0.35)
0.040(1.0)
.010(0.25)
0.024(0.6)
.043(1.10)
.035(0.90)
0.031(0.8) Typ.
.004(0.10)MIN.
2026
Absolute maximumMethod
ratings
@ 25к
0.031(0.8) Typ.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Electrical
Characteristics @ 25к
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH
.008(0.20)FM1100-MH FM1150-MH FM1200-M
12
13
Maximum Recurrent Peak
Reverse Voltage
VRRM Typ 20 Max 30Unit
Symbol
Parameter
Min
VMaximum
0.5VRMS --- 14 --Input
voltage (VCC=5V, IO=100­A)
I(off)
21 V
RMS Voltage
--V
VI(on)
--(VO=0.3V, IO=2mA)
3.0
Maximum DC Blocking Voltage
20
30
VO(on)
Output voltage
=
(IO/II 10mA/0.5mA)
---VDC --0.3
V
II =
Input
current
(VI 5V)
--- IO --0.18
mA
Maximum
Average
Forward
Rectified Current
I
­A
Output current (VCC
=
=50V, VI 0)
--- --0.5
O(off)
Peak
Current
8.3O=5V,
ms =
single
half sine-wave 68
GI Forward
DCSurge
current
gain (V
IO 5mA)
--IFSM --K¡
R1
Input
32.9
47
61.1
superimposed
onresistance
rated load (JEDEC method)
RTypical
Resistance
ratio
0.8
1.0
1.2
2/R1
Thermal Resistance (Note 2)
RΘJA
Transition frequency
MHz
fT
--- CJ 250
--Typical
Junction
Capacitance
(Note
1)
(VO=10V, IO=5mA, f=100MHz)
-55
to
+125
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
CHARACTERISTICS
16
60
.004(0.10)
18
10
80
100
115
150
120
200
28
35
42
56
70
105
140
40
50
60
80
100
150
200
.004(0.10)MAX.
1.0
30
.014(0.35)
40
.006(0.15)
120
-55 to +150
- 65 to +175
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
*Marking:
Maximum Average Reverse Current
at @T26
A=25℃
Rated DC Blocking Voltage
15
50
Dimensions in inches and (millimeters)
Maximum Forward Voltage at 1.0A DC
14
40
.035(0.90)
.028(0.70)
.069(1.75)
.057(1.45)
Dimensions in inches and (millimeters)
by cathode band Min
Symbol • Polarity : Indicated
Parameter
Typ
Max
Unit
VCC
Supply
voltage
--50
--V
• Mounting Position : Any
VIN
Input voltage
-10
--40
V
• Output
Weightcurrent
: Approximated 0.011 gram
--IO
--mA
100
Pd
Power dissipation
--150
--mW
ć
Tj
JunctionMAXIMUM
temperature RATINGS AND ELECTRICAL
--150
---CHARACTERISTICS
Tstg
Storage temperature
-55
--150
ć
Ratings at 25℃ ambient temperature unless otherwise specified.
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.5
0.92
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTC144EE THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Typical Characteristics
Package outline
Features
ON Characteristics
design, excellent power dissipation offers
• Batch process
INPUT VOLTAGE
VI(ON)
10
3
1
SOD-123H
0.3
(mA)
(V)
30
OFF Characteristics
1
VCC=5V
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.1
IO
better reverse leakage current and thermal resistance.
V =0.3V
• Low profile surface mounted applicationO in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planarT chip,
=25℃ metal silicon junction.
a
• Lead-free parts meet environmental standards of
Ta=100℃
MIL-STD-19500 /228
RoHS
product
for
packing
code
suffix
"G"
•
Halogen free product for packing code suffix "H"
OUTPUT CURRENT
100
Ta=100℃
0.071(1.8)
0.056(1.4)
0.03
Ta=25℃
0.01
0.3
Mechanical data
0.1
0.1
• Epoxy : UL94-V0 rated flame retardant
1E-3
30
SOD-123H
• Case0.3: Molded plastic,
1
10
0.0
3
,
CURRENT
I
(mA)
• TerminalsOUTPUT
:Plated
terminals,
solderable per MIL-STD-750
3E-3
0.040(1.0)
0.024(0.6)
0.4
0.031(0.8) Typ. 0.8
1.2
INPUT VOLTAGE
O
VI(OFF)
1.6
2.0
0.031(0.8)
Typ.
(V)
Method 2026
• Polarity : Indicated by cathode band
VO(ON) —— IO
: Any
• Mounting Position
• Weight : Approximated 0.011 gram
GI
IO/II=20
VO=5V
300
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
100
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
Maximum RMS Voltage
VRMS
14
VDC
20
Ta=100℃
Ta=25℃
10
Peak
Forward 1Surge Current 38.3 ms single half
sine-wave
0.5
10
superimposed on ratedOUTPUT
load (JEDEC
method)
CURRENT
IO (mA)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
C
——
TJ
O
VR
10
100
115
150
120
200
21
28
35
42
56
70
105
140
30
3
40
50
60
80
100
150
200
0.3
1
3
1.0
30
OUTPUT CURRENT
GI
40
120
-55 to +125
PD
400
VF
6
PD
@T A=125℃
IR
CO
POWER DISSIPATION
Maximum Average Reverse Current at @T A=25℃
(pF)
18
80
10
IO
(mA)
30
100
Ta
——
- 65 to +175
-55 to +150
350
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH
Maximum Forward Voltage at 1.0A DC
NOTES:
4
CAPACITANCE
16
60
f=1MHz
Ta=25℃
CHARACTERISTICS
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
15
50
1
0.1
TSTG
Rated DC Blocking Voltage
14
40
30IFSM 50
RΘJA
Typical Thermal Resistance (Note 2)
8
Storage
Temperature Range
13
30
10
IO
Maximum Average Forward Rectified Current
(mW)
30
Ta=25℃
100
30
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
SYMBOL FM120-MH FM130-MH
Maximum DC Blocking Voltage
Ta=100℃
300
DC CURRENT GAIN
OUTPUT VOLTAGE
IO
——
1000
VO(ON)
(mV)
1000
Dimensions in inches and (millimeters)
2- Thermal Resistance From Junction to Ambient
2
0.50
0.70
0.9
0.85
300
0.5
0.92
10
250
200
DTC144EE
150
100
50
0
0
0
2012-06
2012-0
5
10
REVERSE BIAS VOLTAGE
15
VR
(V)
20
0
25
50
75
100
125
150
T (℃ )
WILLAS
ELECTRONIC COR
AMBIENT TEMPERATURE
a
WILLAS ELECTRONIC CORP.