DTA143EUA(SOT 323)

WILLAS
FM120-M+
DTA143EUA THRU
PNP
Digital
Transistor
FM1200-M
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
package
is available
• Pb-Free
for overvoltage
protection.
• Guardring
Ultra
high-speed
switching.
•
RoHS product for packing
code suffix ”G”
• Silicon epitaxial planar chip, metal silicon junction.
Halogen
free product
forenvironmental
packing code
suffix of
“H”
parts meet
standards
• Lead-free
MIL-STD-19500
/228
• Epoxy meets
UL 94 V-0
flammability rating
product for
packing
• RoHS
• Moisure
Sensitivity
Level
1 code suffix "G"
free product
for packing
code suffix "H"of an inverter circuit
• Built-in Halogen
bias resistors
enable
the configuration
Mechanical
datainput resistors
without
connecting external
• The bias
resistors
consist
offlame
thin-film
resistors with complete
: UL94-V0
rated
retardant
• Epoxy
isolation to allow negative biasing of the input. They also have the
• Case : Molded plastic, SOD-123H
advantage of almost completely eliminating parasitic effects.
,
• Terminals
:Plated terminals,
MIL-STD-750
• Only the
on/off conditions
need tosolderable
be set forper
operation,
making
Method 2026
device design easy
• Polarity : Indicated by cathode band
Absolute maximum ratings @ 25к
: Any
• Mounting Position
Symbol
Parameter
Min
Typ
Max
Unit
VCC
Supply voltage
---50
--V
• Weight
: Approximated 0.011 gram
0.146(3.7)
0.130(3.3)
Features
OutputMAXIMUM
current
-30
---
10
.004(0.10)MIN.
.096(2.45)
.078(2.00)
0.031(0.8) Typ.
Electrical Characteristics
RATINGS@ 25к
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
.087(2.20)
.070(1.80)
V
mW
ć
ć
FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH
.056(1.40)
Symbol
Parameter
Min
Marking Code
VI(off)
-0.5
Input voltage (VCC=-5V, IO=-100­A)
Maximum Recurrent Peak Reverse
Voltage
VRRM
--VI(on)
(VO=-0.3V, IO=-20mA)
Maximum
RMS
Voltage
VRMS
V
Output
voltage
=
(IO/II -10mA/-0.5mA
--O(on)
II
=
Input
currentVoltage
(VI -5V)
---VDC
Maximum
DC
Blocking
IO(off)
Output current (VCC=
=-50V, VI 0)
--Maximum Average Forward Rectified Current
IO
G
DC
current
gain
(V
=
I
30
I
O=-5V,
O -10mA)
R
Input
resistance
3.29
1
Peak Forward Surge Current 8.3 ms single half sine-wave
R2/R1
Resistance ratio
0.8IFSM
superimposed on rated load (JEDEC method)
Transition frequency
fT
--(Vo = -10V,
Io =5mA,
f=100MHz)
Typical
Thermal
Resistance
(Note
2)
RΘJA
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
0.040(1.0)
0.024(0.6)
.010(0.25)
.003(0.08)
-100
RATINGS AND ELECTRICAL
-----CHARACTERISTICS
mA
IC(MAX)
-100
Ratings
atPower
25℃ dissipation
ambient temperature unless otherwise
Pd
--- specified.
200
--Tj
Junction
temperature
--Single
phase
half wave,
60Hz, resistive of inductive --load. 150
T
Storage
temperature
-55
--150
stg capacitive
For
load,
derate current by 20%
0.071(1.8)
0.056(1.4)
Typ
------------4.7
1.0
250
12 Max 13 Unit
V
20 --- 30
V
-3.0
14 -0.3 21 V
20 -1.8 30 mA
­A
-0.5
--6.11
K¡
1.2
---
MHz
14
40
15
50
.047(1.20) 18
16
60
80
10
100
115
150
120
200
28
35
42
56
70
105
140
40
50
60
80
100
150
200
.004(0.10)MAX.
1.0
30
.043(1.10)
.032(0.80)
Input voltage
SOT-323
.054(1.35)
.045(1.15)
VIN
IO
0.012(0.3) Typ.
.016(0.40)
40 .008(0.20)
120
Dimensions
in inches -55
andto(millimeters)
+150
-55 to +125
- 65 to +175
TSTG
CHARACTERISTICS
*Marking:
Maximum Average Reverse Current at @T
A=25℃
Rated DC Blocking Voltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
13
@T A=125℃
0.50
0.70
Suggested0.85
Solder
0.5Pad Layout
IR
0.70
10
0.9
0.92
mm
NOTES:
0.90
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
1.90
0.65
0.65
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTA143EUA THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Typical Characteristics
Features
design,
excellent power dissipation offers
• Batch processON
Characteristics
INPUT VOLTAGE
-3
-1
(mA)
VI(ON)
-10
-3
Mechanical data
-0.3
VCC=-5V
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
-1
I0
(V)
-30
OFF Characteristics
SOD-123H
-10
OUTPUT CURRENT
better reverse leakage current and thermal resistance.
order to
• Low profile surface mounted application VinO=-0.3V
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal
Ta=25℃ silicon junction.
• Lead-free parts meet environmental standards of
Ta=100℃
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
-100
0.071(1.8)
0.056(1.4)
Ta=100℃
-0.3
Ta=25℃
-0.1
-0.03
• Epoxy : UL94-V0 rated flame retardant
-0.1 • Case : Molded plastic, SOD-123H
-0.1
-1
-10
-100
-0.3
-30
-3
,
OUTPUT CURRENT
(mA)
• Terminals :Plated
terminals,I solderable
per MIL-STD-750
0.040(1.0)
0.024(0.6)
-0.01
-0.0
0.031(0.8)
Typ.
-0.4
-0.8
-1.2
INPUT VOLTAGE
O
-1.6
VI(OFF)
0.031(0.8)
-2.0 Typ.
(V)
Method 2026
• Polarity : Indicated by cathode band
GI : ——
Any IO
• Mounting Position
• Weight : Approximated 0.011 gram
1000
Dimensions in inches and (millimeters)
VRRM
12
20
Maximum RMS Voltage
VRMS
14
VDC
20
Ta=25℃
10
Maximum DC Blocking Voltage
3
Maximum Average Forward Rectified Current
Peak Forward
Surge Current 8.3 ms single half sine-wave
1
-10
-3
superimposed on rated load
(JEDEC
method)I
OUTPUT
CURRENT
Typical Thermal Resistance (Note 2)
O
(mA)
-30
12
——
VR
CHARACTERISTICS
(mV)
VO(ON)
15
50
16
60
Ta18
=25℃
80
10
100
115
150
120
200
21
28
35
42
56
70
105
140
30
40
50
60
80
100
150
200
-30
-1
1.0
30
-10
-3
OUTPUT CURRENT
40
120
TJ
-55 to +125
TSTG
400
-100
-30
IO
(mA)
-55 to +150
PD- 65——
Ta
to +175
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH
350
VF
(pF)
Maximum Average Reverse Current at @T A=25℃
IR
PD
@T A=125℃
CO
14
40
f=1MHz
Ta=25℃
10
POWER DISSIPATION
OUTPUT CAPACITANCE
13
30
CJ
Maximum Forward Voltage at 1.0A DC
Rated8DC Blocking Voltage
Ta=100℃
-10
-200
RΘJA
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature RangeCO
IO
IFSM
-100
(mW)
-1
-0.3
-300
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
SYMBOL FM120-MH FM130-MH
-100
Maximum Recurrent Peak Reverse Voltage
-0.1
OUTPUT VOLTAGE
GI
DC CURRENT GAIN
Ta=100℃
RATINGS
30
Marking Code
NOTES:
6
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
IO/II=20
VO=-5V
Ratings at 25℃ ambient temperature unless otherwise specified.
Single
100 phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
IO
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
300
VO(ON) ——
-1000
2- Thermal Resistance From Junction to Ambient
4
0.50
0.70
0.92
10
250
200
0.9
0.85
0.5
300
DTA143EUA
150
100
2
50
0
-0
2012-06
2012-0
-4
-8
REVERSE VOLTAGE
-12
VR
-16
(V)
-20
0
0
25
50
75
100
AMBIENT TEMPERATURE
Ta
125
150
(℃ )
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTA143EUA THRU
PNP
Digital
Transistor
FM1200-M
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Features
Pb Free Produc
SOD-123+ PACKAGE
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
loss, high efficiency.
• Low power Device PN Packing 0.130(3.3)
• High current capability,
(1) low
(2) forward voltage drop.
DTA143EUA –T
G ‐WS Tape& Reel: 3 Kpcs/Reel surge capability.
• High
for overvoltage protection.
• Guardring
Note: (1)
Packing code, Tape & Reel Packing • Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
• (2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” Lead-free
parts meet environmental standards of
•
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified.
specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load.
For capacitive
load, derate current by 20%
changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information 12
13
14
15
16
18
10
115
120
contained are intended to provide a product description only. "Typical" parameters 20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
VRRM
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
use of any product or circuit. superimposed
on rated load (JEDEC method)
40
Typical
Thermal
Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
WILLAS products are not designed, intended or authorized for use in medical, -55 to +125
-55 to +150
Operating
Temperature Range
TJ
Marking Code
- 65 to +175
Storage
Temperature Range
TSTG
life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.9
0.92
VF
0.50
0.70
0.85
or indirectly cause injury or threaten a life without expressed written approval 0.5
Maximum Average Reverse Current at @T A=25℃
IR
10
@T A=125℃
Ratedof WILLAS. Customers using or selling WILLAS components for use in DC Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. Maximum Forward Voltage at 1.0A DC
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
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