DTA143ECA(SOT 23)

WILLAS
FM120-M+
DTA143ECATHRU
PNP Digital Transistor
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
package is available
• Pb-Free
• Guardring for overvoltage protection.
RoHS
product
for packing
code suffix ”G”
high-speed
switching.
• Ultra
Silicon epitaxial planar chip, metal silicon junction.
•
Halogen free product for packing code suffix “H”
• Lead-free parts meet environmental standards of
Sensitivity Level
• Moisure
MIL-STD-19500
/228 1
• Epoxy
meets
UL for
94 packing
V-0 flammability
rating
product
code suffix "G"
• RoHS
• Built-inHalogen
bias resistors
enable
the configuration
free product
for packing
code suffix "H" of an inverter circuit
without
connecting external
Mechanical
data input resistors
• The bias
resistors
consist
thin-film resistors with complete
flame retardant
• Epoxy : UL94-V0 ratedof
isolation to allow negative biasing of the input. They also have the
SOD-123H
• Case :ofMolded
advantage
almostplastic,
completely
eliminating parasitic effects.
,
Terminals
terminals,
peroperation,
MIL-STD-750
• Only•the
on/off :Plated
conditions
need solderable
to be set for
making
Method 2026
device design easy
• Polarity : Indicated by cathode band
• Mounting Position : Any
Absolute maximum ratings @ 25к
• Weight : Approximated 0.011 gram
0.146(3.7)
0.130(3.3)
SOT-23
0.012(0.3) Typ.
.122(3.10) 0.071(1.8)
.106(2.70) 0.056(1.4)
.063(1.60)
.047(1.20)
Features
0.040(1.0)
0.024(0.6)
.080(2.04)
.070(1.78)
0.031(0.8) Typ.
.006(0.15)MIN.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
.110(2.80)
.083(2.10)
Symbol
Parameter
Min
Typ
Max
Unit
VCC
Supply voltage
---50
--V
MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
VIN
Input voltage
-30
--10
V
-100
IO
Ratings
at Output
25℃ ambient
current temperature unless otherwise
--- specified. --mA
IC(MAX)
-100
Single phase half wave, 60Hz, resistive of inductive load.
Pd
Power dissipation
--200
--mW
load,temperature
derate current by 20%
Tj capacitive
Junction
--150
--ć
For
Tstg
Storage temperature
-55
--150FM130-MH
ć FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL
FM120-MH
RATINGS
.008(0.20)
Marking Code
12
13
14
15
16
18 .003(0.08)
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
VRRM
VRMS
14
21
28
Symbol
Parameter
Min
Maximum DC Blocking Voltage
VDC Typ 20 Max 30 Unit 40
---0.5
VI(off)
--V
Input voltage (VCC=-5V, IO=-100­A)
Maximum Average Forward Rectified Current
---IO
---3.0
V
VI(on)
(VO=-0.3V, IO=-20mA)
VO(on)
Output voltage
=
(IO/II -10mA/-0.5mA
-----0.3
V
Peak
Forward Surge Current 8.3
ms single half sine-wave
IFSM --II
=
Input current (VI -5V)
---1.8
mA
superimposed on rated load (JEDEC method)
­A
IO(off)
Output current (VCC=
=-50V, VI 0)
-----0.5
Typical
Resistance
2) =
RΘJA --GI Thermal
DC current
gain(Note
(VO=-5V,
IO -10mA)
30
--- K¡
R
Input
resistance
3.29
4.7
6.11
1
Typical
Junction Capacitance (Note 1)
CJ
R
/R
Resistance
ratio
0.8
1.0
1.2
-55
to
+125
2
1
Operating Temperature Range
TJ
Transition frequency
fT
--250
--MHz
Storage
Temperature Range
TSTG
(Vo=-10V, Io=5mA, f=100MHz)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
35
42
50
60
.004(0.10)MAX.
1.0
30
56
70
105
140
80
100
150
200
.020(0.50)
.012(0.30)
40
120
Dimensions
in inches-55
andto(millimeters)
+150
- 65 to +175
Suggested Solder
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Average Reverse Current at
*Marking: 13
@T A=25℃
Rated DC Blocking Voltage
@T A=125℃
NOTES:
0.50
Pad Layout
0.85
0.70
0.9
0.92
.031
0.5
.800
IR
10
.035
.900
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
.055(1.40)
.035(0.89)
Electrical
Characteristics
@ 25к
Maximum RMS
Voltage
.079
2.000
2- Thermal Resistance From Junction to Ambient
inches
mm
.037
.950
.037
.950
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTA143ECA THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Typical Characteristics
Package outline
Features
design,
excellent power dissipation offers
• Batch processON
Characteristics
INPUT VOLTAGE
-3
-1
-0.3
VCC=-5V
0.146(3.7)
0.130(3.3)
-3
(mA)
VI(ON)
-10
OFF Characteristics
SOD-123H
-10
0.012(0.3) Typ.
-1
I0
(V)
-30
better reverse leakage current and thermal resistance.
order to
• Low profile surface mounted application VinO=-0.3V
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal
Ta=25℃silicon junction.
• Lead-free parts meet environmental standards of
Ta=100℃
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
OUTPUT CURRENT
-100
0.071(1.8)
0.056(1.4)
Ta=100℃
-0.3
Ta=25℃
-0.1
Mechanical data
-0.03
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
-0.1 • Case : Molded plastic, SOD-123H
-0.1
-1
-10
-100
-0.3
-30
-3
,
OUTPUT terminals,
CURRENT I solderable
(mA)
• Terminals :Plated
per MIL-STD-750
-0.01
-0.0
0.031(0.8)
Typ.
-0.4
-0.8
-1.2
INPUT VOLTAGE
O
-1.6
VI(OFF)
0.031(0.8)
-2.0 Typ.
(V)
Method 2026
Dimensions in inches and (millimeters)
VRRM
12
20
Maximum RMS Voltage
VRMS
14
Maximum DC Blocking Voltage
VDC
20
Ta=25℃
10
3
Maximum Average Forward Rectified Current
Peak Forward
Surge Current 8.3 ms single half sine-wave
1
-10
-3
superimposed on rated load
(JEDEC
method) I
OUTPUT
CURRENT
Typical Thermal Resistance (Note 2)
O
(mA)
-30
CHARACTERISTICS
VF
(pF)
IR
(mV)
PD
@T A=125℃
CO
120
200
28
35
42
56
70
105
140
50
60
80
100
150
200
-1
1.0
30
-10
-3
OUTPUT CURRENT
40
120
-100
-30
IO
(mA)
-55 to +150
P-D 65——
Ta
to +175
400
NOTES:
OUTPUT CAPACITANCE
115
150
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH
350
Maximum Average Reverse Current at @T A=25℃
6
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
10
100
f=1MHz
Ta=25℃
10
Maximum
Forward Voltage at 1.0A DC
Rated 8DC Blocking Voltage
80
40
-30
-55 to +125
TSTG
T18
=25℃
a
30
-10
(mW)
12
16
60
TJ
VR
15
50
CJ
——
14
40
21
-200
RΘJA
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature RangeCO
IO
IFSM
-100
13
30
POWER DISSIPATION
-1
-0.3
Ta=100℃
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
SYMBOL FM120-MH FM130-MH
-100
Maximum Recurrent Peak Reverse Voltage
-0.1
-300
VO(ON)
GI
DC CURRENT GAIN
Ta=100℃
RATINGS
30
Marking Code
IO/II=20
VO=-5V
Ratings at 25℃ ambient temperature unless otherwise specified.
Single
100 phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
IO
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
300
VO(ON) ——
-1000
OUTPUT VOLTAGE
1000
• Polarity : Indicated by cathode band
• Mounting Position
GI : Any
—— IO
• Weight : Approximated 0.011 gram
2- Thermal Resistance From Junction to Ambient
4
0.50
0.70
0.92
10
250
200
0.9
0.85
0.5
300
DTA143ECA
150
100
2
50
0
-0
2012-06
2012-0
-4
-8
REVERSE VOLTAGE
-12
VR
-16
(V)
-20
0
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃ )
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
PNP Digital Transistor
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+
PACKAGE
Features
FM120-M+
THRU
DTA143ECA
FM1200-M+
Pb Free Product
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,Device PN Packing 0.130(3.3)
voltage drop.
• High current capability, low
(1) forward
(2)
DTA143ECA –T
G ‐WS Tape& Reel: 3 Kpcs/Reel capability.
• High surge
for overvoltage protection.
• Guardring
Note: (1)
Packing code, Tape & Reel Packing • Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction.
• Silicon
Lead-free
parts meet environmental standards of
•
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified.
specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load.
load, derate current by 20%
changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information Marking Code
12
13
14
15
16
18
10
115
120
contained are intended to provide a product description only. "Typical" parameters 20
30
40
50
60
80
100
150
200
Maximum Recurrent
Peak Reverse Voltage
Vol
VRRM
Vol
14
21
28
35
42
56
70
105
140
Maximum RMS
Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can Vol
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. Am
Maximum Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
Am
use of any product or circuit. superimposed
on rated load (JEDEC method)
℃/
40
Typical Thermal
RΘJA
Resistance (Note 2)
PF
120
Typical Junction Capacitance (Note 1)
CJ
WILLAS products are not designed, intended or authorized for use in medical, -55
to
+125
-55
to
+150
Operating Temperature Range
TJ
℃
- 65 to +175
TSTG
℃
life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Vol
0.9
Maximum Forward
Voltage
at
1.0A
DC
0.92
VF
0.50
0.70
0.85
or indirectly cause injury or threaten a life without expressed written approval 0.5
Maximum Average Reverse Current at @T A=25℃
IR
mAm
of WILLAS. Customers using or selling WILLAS components for use in 10
@T A=125℃
Rated DC Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
1- MeasuredInc and its subsidiaries harmless against all claims, damages and expenditures
at 1 MHZ and applied reverse voltage of 4.0 VDC.
. Storage Temperature Range
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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