WILLAS FM120-M+ SCS751STHRU FM1200-M+ SOD-523 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features Schottky barrier Diode process design, excellent power dissipation offers • Batch better reverse leakage current and thermal resistance. SOD-123H SOD-523 • Low profile surface mounted application in order to optimize board space. FEATURES • Low power loss, high efficiency. z • High Small surface mounting type voltage drop. current capability, low forward capability. z • High Lowsurge reverse current and low forward voltage • Guardring for overvoltage protection. z High reliability • Ultra high-speed switching. Pb-Free package is available z • Silicon epitaxial planar chip, metal silicon junction. parts meet environmental standards • Lead-free RoHS product for packing code suffix of”G” 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 Halogen product packing code suffix “H” productfree for packing codefor suffix "G" • RoHS free product for packing code suffix z Halogen Moisture Sensitivity Level 1 "H" Mechanical data z Polarity: Color band denotes cathode end • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H MARKING: 5 , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band • Mounting Position : Any Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ • Weight : Approximated 0.011 gram Parameter Symbol Limit MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Peak reverse voltage VRM Single phase half wave, 60Hz, resistive of inductive load. For derate current by 20% DCcapacitive reverse load, voltage V R MeanCode rectifying Marking RATINGS 40 V 30 V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT current IO Maximum Recurrent Peak Reverse Voltage Peak forward surge current Maximum RMS Voltage Maximum DC Blocking Voltage VRRM IFSM VRMS VDC Power dissipation Maximum Average Forward Rectified Current Unit Thermal Resistance Ambient Peak Forward Surge Current Junction 8.3 ms singleto half sine-wave superimposed on rated load (JEDEC method) 2SHUDWLQJ Typical Thermaltemperature Resistance (Note 2) PD 12 20 Storage temperature 14 21 28 20 30 40 50 Tj RΘJA -55~+125 -55~+150 -55 to +125 18 80 10 100 42 56 70 60 80 100 1.0 30 667 T Storage Temperature Range 16 60 150 IO RθJA IFSM TJstg Operating Temperature Range 30 15 50 14 40 200 35 CJ Typical Junction Capacitance (Note 1) 13 30 40 120 mA 115 150 mA 105 150 mW 120 200 Volts 140 Volts 200 Volts Amp ℃/W Amp ℃ -55 to +150 ℃/W PF ℃ ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Electrical Ratings @Ta=25℃ Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Parameter Voltage @T A=125℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF 0.50 IR Symbol Min Typ 1- Forward Measured atvoltage 1 MHZ and applied reverse voltage of 4.0 VDC.VF Reverse current IR Capacitance between terminals CT 2012-06 2012-11 0.85 0.5 NOTES: 2- Thermal Resistance From Junction to Ambient 0.70 2 Max Unit 0.37 V 0.5 μA pF 10 0.9 0.92 Volts mAmp Conditions IF=1mA VR=30V VR=1V,f=1MHZ WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SCS751STHRU FM1200-M+ SOD-523 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Typical Characteristics better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to Reverse 10 0.146(3.7) Characteristics 0.130(3.3) 0.012(0.3) Typ. o Ta=100 C 0.071(1.8) 0.056(1.4) C o MIL-STD-19500 /228 REVERSE CURRENT IR a T =1 00 (uA) o C 1 T= a 2 5 FORWARD CURRENT IF (mA) optimize board space. high efficiency. • Low power loss, Forward Characteristics 100 • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • 10Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of product for packing code suffix "G" • RoHS 1 Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant 0.1 • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.1 o Ta=25 C 0.040(1.0) 0.024(0.6) 0.01 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 0.01 • Polarity : Indicated by0.4cathode band 0.0 0.2 0.6 FORWARD VOLTAGE V (V) • Mounting Position : Any • Weight : Approximated 0.011 gram 0.8 1E-3 1.0 0 Dimensions in inches20and (millimeters) 10 15 25 30 5 REVERSE VOLTAGE F VR 35 (V) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 8 6 Marking Code VRRM Maximum Recurrent Peak Reverse Voltage 5 Maximum RMS Voltage 4 Maximum DC Blocking Voltage Maximum Average Forward Rectified Current 3 Peak Forward Surge Current 8.3 ms single half sine-wave 2 superimposed on rated load (JEDEC method) 14 21 VDC 20 30 IO IFSM Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ TSTG 15 10 REVERSE VOLTAGE CHARACTERISTICS VR (V) 15 50 16 60 10 100 115 150 120 200 Volts 28 35 42 56 70 105 140 Volts 40 50 60 80 100 150 200 Volts 100 1.0 30 50 -55 to +125 0 Amps Amps 40 120 20 18 80 - 65 to +175 25 PF -55 to +150 0 ℃/W 50 75 ℃ 100 AMBIENT TEMPERATURE Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 14 40 150 Ta ℃ 125 (℃ ) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC 13 30 VRMS RΘJA Typical Thermal Resistance (Note 2) 1 Storage Temperature Range 0 5 12 20 (mW) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT PD CAPACITANCE BETWEEN TERMINALS CT (pF) f=1MHz RATINGS 7 Power Derating Curve 200 POWER DISSIPATION Ratings at 25℃ ambient temperature unless otherwise specified. Capacitance Characteristics Single phase half wave, 60Hz, resistive of inductive load. 10 9 Ta=25℃ For capacitive load, derate current by 20% @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Volts 10 mAmp NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SCS751STHRU FM1200-M+ SOD-523 Plastic-Encapsulate Diodes -20V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Outline Drawing SOD-523 • Low profile surface mounted application in order to optimize board space. .051(1.30) Mechanical data .043(1.10) • Epoxy : UL94-V0 rated flame retardant Halogen free product for packing code suffix "H" 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .014(0.35) .009(0.25) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.146(3.7) 0.130(3.3) .035(0.90) .028(0.70) • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) .028(0.70) .020(0.50) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS .008(0.20) .002(0.05) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS .067(1.70)V Maximum Average Forward Rectified Current .059(1.50) I Maximum DC Blocking Voltage DC 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts 14 21 28 35 42 56 70 105 140 Volts 20 30 40 50 60 80 100 150 200 Volts 1.0 30 O Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IFSM RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 40 120 -55 to +125 CHARACTERISTICS ℃/W PF ℃ - 65 to +175 .006(0.15)MIN. ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Amp -55 to +150 TSTG Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage Amp @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Volts 10 mAmp NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-11 WILLAS ELECTRONIC Rev.CCORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SCS751STHRU FM1200-M+ SOD-523 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Features Information: Ordering • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Device PN in order to • Low profile surface mounted (1) application (2) SCS751S ‐T optimize board space. G ‐WS Package outline Packing SOD-123H Tape&Reel: 3 Kpcs/Reel 0.146(3.7) Low power loss, high efficiency. •Note: (1) Packing code, Tape & Reel Packing 0.130(3.3) • High current capability, low forward voltage drop. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” capability. • High surge • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts V RRM which may be included on WILLAS data sheets and/ or specifications can Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Amp Maximum Average Forward Rectified Current IO 1.0 Peak Forwarduse of any product or circuit. Surge Current 8.3 ms single half sine-wave 30 IFSM Amp superimposed on rated load (JEDEC method) ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, PF 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range T J ℃ life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175 Storage Temperature Range TSTG ℃ applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT or indirectly cause injury or threaten a life without expressed written approval Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAmp 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.