DTC143TUA(SOT 323)

WILLAS
FM120-M+
DTC143TUA THRU
NPN
Digital
Transistor
FM1200-M
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
Features
• Low power loss, high efficiency.
x
x
0.146(3.7)
0.130(3.3)
Built-in bias
resistors enable
MIL-STD-19500
/228 the configuration of an inverter circuit
without connecting
external
input
resistors
for packing
code
suffix "G"(see equivalent circuit)
• RoHS product
Halogen free
productofforthin-film
packing code
suffix "H"
The bias resistors
consist
resistors
with complete
isolationMechanical
to allow negativedata
biasing of the input. They also have the
advantage
of almost
completely eliminating parasitic effects
: UL94-V0 rated flame retardant
• Epoxy
Only the on/off conditions need to be set for operation, making
: Molded plastic, SOD-123H
• Case easy
device design
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.096(2.45)
.078(2.00)
•
•
x
SOT-323
Pb-Free• High
package
is available
current capability, low forward voltage drop.
capability.code suffix ”G”
• High surge
RoHS product
for packing
Guardring for overvoltage protection.
•
Halogen free product for packing code suffix “H”
• Ultra high-speed switching.
Epoxy meets
ULepitaxial
94 V-0planar
flammability
rating
chip, metal silicon junction.
• Silicon
Moisure• Sensitivity
Level
1
Lead-free parts meet environmental standards of
.004(0.10)MIN.
•
0.040(1.0)
0.024(0.6)
.010(0.25)
.003(0.08) 0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
.087(2.20)
Dimensions in inches and
(millimeters)
Unit
Collector-Emitter Voltage
VCEO
50
MAXIMUM RATINGS
AND ELECTRICAL
Emitter-Base voltage
VEBO
5
Collector Ratings
Current-Continuous
100specified.
at 25℃ ambient temperatureICunless otherwise
V
V
CHARACTERISTICS
V
mA
Collector Single
Dissipation
PC of inductive load.
200
phase half wave, 60Hz, resistive
For capacitive load, derate current byT20%
Junction
J
Temperature
Storage Temperature Range
RATINGS
TSTG
Marking Code
Maximum Recurrent Peak Reverse Voltage
Sym
Parameter
mW
к
150
.056(1.40)
к
-55~150
FM140-MH FM150-MH FM160-MH
FM180-MH FM1100-MH FM1150-MH FM1200-M
SYMBOL FM120-MH FM130-MH
.047(1.20)
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
VRRM
Maximum RMS Voltage
Electrical
Characteristics
Maximum DC Blocking Voltage
.070(1.80)
.054(1.35)
.045(1.15)
• Polarity Ratings
: Indicated by cathode band
Absolute Maximum
• Mounting Position : Any
Parameter
Symbol
Value
Collector-Base Voltage
VCBO gram
50
• Weight : Approximated 0.011
Min
VRMS
14
21
28
35
VDC
20
30
40
50
60
.004(0.10)MAX.
1.0
Typ
Max
Unit
42
56
70
105
140
80
100
150
200
.043(1.10)
.032(0.80)
Maximum
Average Forward
Rectified
Current
IO
Collector-Base
Breakdown
Voltage
50
--V
V(BR)CBO
-- (IC=50uA, IE=0)
Peak Collector-Emitter
Forward Surge Current
8.3
ms
single
half
sine-wave
Breakdown Voltage
FSM
30
I
50
----V
V(BR)CEO
superimposed
rated load (JEDEC method)
IB=0)
(IC=1mA,on
.016(0.40)
Emitter-Base
Breakdown
Voltage
V
40
Typical
Thermal
Resistance
(Note
2)
RΘJA
5
----V(BR)EBO
(IE=50uA, IC=0)
.008(0.20)
120
Typical
Junction
Capacitance
(Note
1)
C
J
Collector Cut-off Current
----0.5 -55 to
uA+125
ICBO
-55 to +150
IE=0) Range
(VCB=50V,
Operating
Temperature
TJ
Dimensions in inches and (millimeters)
Emitter
Cut-off Current
65
to
+175
Storage
Temperature
Range
TSTG
IEBO
----0.5
uA
(VEB=4V, IC=0)
DC Current Gain
100 SYMBOL
300 FM120-MH
600 FM130-MH
--- FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
hFE
CHARACTERISTICS
(VCE=5V, IC=1mA)
0.9
Collector-Emitter
Saturation
Maximum
Forward Voltage
at 1.0AVoltage
DC
0.92
VF
0.50
0.70
0.85
----0.3
V
VCE(sat)
( IC=5mA,IB=0.25mA )
Suggested
Solder
0.5
Maximum
Average Reverse Current at @T A=25℃
IR4.7
K¡
R1
Input resistance
3.29
6.11
Pad
10 Layout
@T A=125℃
Rated DC Blocking Voltage
Transition Frequency
--250
--MHz
fT 0.70
(VCE =10V, I E =5mA, f=100MHz)
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.90
2- Thermal
Marking:
03 Resistance From Junction to Ambient
1.90
mm
0.65
0.65
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTC143TUA THRU
NPN
Digital
Transistor
FM1200-M
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
Typical Characteristics
DC CURRENT GAIN : hFE
•
MIL-STD-19500
/228 Ta=100°C
100
RoHS product for packing code25°C
suffix "G"
−40°C
50
Halogen free product for packing code suffix "H"
Mechanical
data
20
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
1k for overvoltage protection.
• Guardring
VCE=5V
switching.
• Ultra high-speed
500
• Silicon epitaxial planar chip, metal silicon junction.
200
parts meet environmental standards of
• Lead-free
: UL94-V0 rated flame retardant
• Epoxy 10
plastic, SOD-123H
• Case : Molded
5
,
• Terminals
:Plated terminals, solderable per MIL-STD-750
2
Method 2026
1
200µ 500µby1mcathode
2m 5mband
10m 20m
Polarity 100µ
: Indicated
0.146(3.7)
0.130(3.3)
1
0.012(0.3) Typ.
lC/lB=20
0.071(1.8)
0.056(1.4)
500m
200m
Ta=100°C
25°C
−40°C
100m
50m
20m
0.040(1.0)
0.024(0.6)
10m
5m
0.031(0.8) Typ.
0.031(0.8) Typ.
2m
1m
50m 100m
100µ 200µ 500µ 1m 2m
5m 10m in20m
50m
100m
Dimensions
inches
and
(millimeters)
•
COLLECTOR
CURRENT
:
I
C
(A)
COLLECTOR
CURRENT
:
I
C
(A)
• Mounting Position : Any
Fig.1 DC0.011
current
Fig.2 Collector-emitter saturation
• Weight : Approximated
gramgain vs.
collector current
voltage vs. collector current
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
Maximum RMS Voltage
VRMS
14
21
28
Maximum DC Blocking Voltage
VDC
20
30
40
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
14
40
15
50
16
60
18
80
10
100
115
150
120
200
35
42
50
60
56
70
105
140
80
100
150
200
1.0
30
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTC143TUATHRU
NPN
Digital
FM1200-M+
1.0A
SURFACE
MOUNTTransistor
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+
Features
Pb Free Product
PACKAGE
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
low (2)
forward voltage drop.
• High current capability,(1)
DTC143TUA –T
G
‐WS Tape& Reel: 3 Kpcs/Reel • High surge capability.
Note: (1)
Packing code, Tape & Reel Packing for overvoltage protection.
• Guardring
• Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction.
parts meet environmental standards of
• Lead-free
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified.
specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability load, derate current by 20%
For capacitive
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information Marking Code
12
13
14
15
16
18
10
115
120
contained are intended to provide a product description only. "Typical" parameters 20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
V
VRRM
V
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can V
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. A
Maximum Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
A
use of any product or circuit. superimposed
on rated load (JEDEC method)
℃
40
Typical Thermal
Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
WILLAS products are not designed, intended or authorized for use in medical, -55 to +125
-55 to +150
Operating Temperature Range
TJ
- 65 to +175
TSTG
life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
V
0.9
Maximumor indirectly cause injury or threaten a life without expressed written approval Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
0.5
Maximum Average Reverse Current at @T A=25℃
IR
m
of WILLAS. Customers using or selling WILLAS components for use in 10
@T A=125℃
Rated DC Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. Storage Temperature Range
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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