WILLAS FM120-M+ THRU MMBT2222AWT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H surface mounted application in order to • Low profile NPN Silicon optimize board space. These transistors are designed for general • Low power loss, high efficiency. amplifier applications. High current capability, low forward They voltageare drop. •purpose in thecapability. SOT–323/SC–70 package which High surge •housed forfor overvoltage protection. •isGuardring designed low power surface mount Ultra high-speed switching. •applications. • Silicon epitaxial planar chip, metal silicon junction. We declare that the material of product • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 3 COLLECTOR 0.071(1.8) 0.056(1.4) 1 BASE compliance with RoHS requirements. MIL-STD-19500 /228 2 EMITTER package is available RoHS product for packing code suffix "G" •Pb-Free RoHS product for packing code suffix ”G” "H" Halogen free product for packing code suffix SOT–323 Halogen free product for packing code suffix “H” Mechanical data • Collector–Base Voltage V CBO Position : Any • Mounting Emitter–Base Voltage 0.011 gram V EBO • Weight : Approximated Collector Current — Continuous 0.031(0.8) Typ. Value Unit 40 Vdc 75 Vdc 6.0 Vdc 600 mAdc 0.031(0.8) Typ. im ina Rating Symbol Method 2026 Collector–Emitter Voltage V CEO Polarity : Indicated by cathode band 0.040(1.0) 0.024(0.6) ry • Epoxy : UL94-V0 rated flame retardant plastic, SOD-123H • Case : Molded MAXIMUM RATINGS , • Terminals :Plated terminals, solderable per MIL-STD-750 I Dimensions in inches and (millimeters) C MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Pr el Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. THERMAL CHARACTERISTICS For capacitive load, derate current by 20% Characteristic Symbol Max Unit SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN RATINGS Total Device Dissipation FR– 5 Board, Marking Code 12 13 150 14 15 16 18 10 115 120 PD mW T = 25°CPeak Reverse Voltage A 20 30 40 50 60 80 100 150 200 Maximum Recurrent Volt VRRM Thermal Resistance Junction to Ambient RθJA 833 °C/W Volt 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Junction and Storage Temperature TJ , Tstg –55 to +150 °C Volt Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC Maximum Average Forward Rectified Current DEVICE MARKING Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) MMBT2222AWT1 = P1 IO IFSM RΘJA Typical Thermal Resistance (Note 2) 1.0 30 40 120 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) CJ Typical Junction Capacitance (Note 1) Operating Temperature Range Characteristic Storage Temperature Range TJ Symbol-55 to +125 Min TSTG OFF CHARACTERISTICS Max - 65 to +175 Collector–Base Maximum Average ReverseBreakdown Current at Voltage @T A=25℃ (I C = 10 µAdc, Rated DC Blocking VoltageI E = 0) @T A=125℃ IR Emitter–Base Breakdown Voltage (I E = 10 µAdc, I C = 0) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Base Cutoff Current NOTES: Amp ℃/W PF -55 to +150 Unit ℃ ℃ Collector–Emitter Breakdown Voltage (1) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI CHARACTERISTICS V (BR)CEO 40 — Vdc Volt 0.9 0.92 VF 0.50 0.70 0.85 Maximum Forward mAdc, at I B1.0A = 0) DC (I C = 1.0Voltage Amp 2- Thermal Resistance to Ambient (V = 60 From Vdc, Junction V = 3.0 Vdc) CE EB CE EB Collector Cutoff Current (V = 60 Vdc, V = 3.0 Vdc) 0.5 V (BR)CBO 75 — V 6.0 — Vdc I BL — 20 nAdc I CEX — 10 nAdc (BR)EBO 10 Vdc mAm 1. Pulse Test: Pulse Width<300 µs, Duty Cycle<2.0%. 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT2222AWT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors Pb Free Product SOD-123+ PACKAGE Package outline Features Batch processCHARACTERISTICS design, excellent power offers •ELECTRICAL (T Adissipation = 25°C unless otherwise noted) (Continued) better reverse leakage current and thermal resistance. Characteristic application in order to • Low profile surface mounted Symbol loss, Gain high (1) efficiency. • Low power DC Current capability, • High current (I C = 0.1 mAdc, V CElow = 10forward Vdc) voltage drop. capability. • High surge (I C = 1.0 mAdc, V CE = 10 Vdc) formAdc, overvoltage protection. • Guardring (I C = 10 V CE = 10 Vdc) switching. • Ultra (Ihigh-speed C = 150 mAdc, V CE = 10 Vdc) • Silicon epitaxial planar chip, metal silicon junction. (I C = 500 mAdc, V CE = 10 Vdc) parts meet environmental standards of • Lead-free hFE Min SOD-123H Max Unit 0.146(3.7) 0.130(3.3) –– ON CHARACTERISTICS (1) optimize board space. 35 50 75 100 40 Collector–Emitter MIL-STD-19500 /228 Saturation Voltage(1) Vdc (I C free = 500 mAdc,for I B= 50 mAdc) Halogen product packing code suffix "H" Base–Emitterdata Saturation Voltage(1) Mechanical • • , • Terminals :Plated terminals, solderable per MIL-STD-750 1.2 2.0 Vdc 0.040(1.0) 0.024(0.6) fT C obo 0.031(0.8) Typ. 300 in inches –– MHz Dimensions and (millimeters) –– 8.0 pF Input Capacitance C ibo –– 30 pF I C = 0, f = 1.0AND MHz) ELECTRICAL CHARACTERISTICS (VMAXIMUM EB = 0.5 Vdc, RATINGS Impedance Ratings at 25℃Input ambient temperature unless otherwise specified. h ie 0.25 1.25 kΩ = 10 Vdc, = 10 mAdc, f = 1.0 kHz) (V Single phase half CE wave, 60Hz,I Cresistive of inductive load. Feedback Ratio –4 For capacitive Voltage load, derate current by 20% h re –– 4.0 X 10 (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN SYMBOL FM120-MH RATINGS Small–Signal Current Gain Marking Code 12 13 14h fe 15 16 18 10 — 115 120 75 375 (V = 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) 20 30 40 50 60 80 100 150 200 Maximum RecurrentCEPeak Reverse Voltage Vol VRRM Output Admittance Vol 14 21 28 h oe 35 42 56 70µmhos 105 140 25 200 Maximum RMS Voltage VRMS (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) Vol Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC Noise Figure NF –– 4.0 dB Am Maximum Average Rectified Current IO 1.0 (V Forward CE= 10 Vdc, I C = 100 µAdc, R S= 1.0 kΩ, f = 1.0 kHz) Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Am SWITCHING CHARACTERISTICS Pr el 0.6 –– BE(sat) 0.031(0.8) Typ. • Polarity : Indicated by cathode band (I C = 20 mAdc, V CE= 20Vdc, f = 100 MHz) Position : Any • Mounting Output Capacitance = 10 Vdc, I E = 0, f = 1.0 MHz) (V • Weight :CBApproximated 0.011 gram 0.3 1.0 im ina Method 2026 Current–Gain — Bandwidth Product –– –– ry V SMALL–SIGNAL CHARACTERISTICS 0.071(1.8) 0.056(1.4) VCE(sat) mAdc, I B = code 15 mAdc) C = 150for packing suffix "G" • RoHS(Iproduct = 150 mAdc, I B =flame 15 mAdc) Epoxy(I :CUL94-V0 rated retardant (I C = 500 mAdc, I B = 50 mAdc) Case : Molded plastic, SOD-123H 0.012(0.3) Typ. –– –– –– — –– superimposed on rated load (JEDEC method) Delay Time (V CC = 3.0 Vdc, V BE= – 0.5 Vdc RΘJA Rise Time I Typical Junction Capacitance (Note 1)C = 150 mAdc, I B1 =C15 J mAdc) Typical Thermal Resistance (Note 2) Operating Temperature Range Storage Time Storage Temperature Range Fall Time TJ mAdc (V CC = 30 Vdc, I C = 150 CHARACTERISTICS Maximum Average Reverse Current at @T A=25℃ Ordering Information@T A=125℃ Rated DC Blocking Voltage Device tr -55 to +125 I B1 = I B2 = 15 mAdc) Marking — 40 — 120 — ts 10 ℃/W 25 ns -55 to +150 225 ns PF ℃ - 65 to +175 — 60 tf ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN 1. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%. VF NOTES: td TSTG Maximum Forward Voltage at 1.0A DC IR 0.50 0.70 0.85 0.5 10 0.9 0.92 Vol mAm Shipping MMBT2222AWT1 P1voltage of 4.0 VDC. 3000/Tape&Reel 1- Measured at 1 MHZ and applied reverse 2- Thermal Resistance From Junction to Ambient 2012-06 2012-11 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU MMBT2222AWT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. SOT−323 • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. .087(2.20) • Ultra high-speed switching. junction. • Silicon epitaxial planar chip, metal silicon.070(1.80) • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) .004(0.10)MIN. .054(1.35) .045(1.15) MIL-STD-19500 /228 0.012(0.3) Typ. • RoHS product for packing code suffix "G" 0.071(1.8) 0.056(1.4) 0.031(0.8) Typ. 0.031(0.8) Typ. im ina Method 2026 0.040(1.0) 0.024(0.6) ry • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .096(2.45) .078(2.00) Halogen free product for packing code suffix "H" Mechanical data • Polarity : Indicated by cathode band • Mounting Position : Any .056(1.40) • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) .010(0.25) .003(0.08) .047(1.20) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Pr el RATINGS Marking Code .004(0.10)MAX. Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Vo Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Vo Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Vo .043(1.10) .032(0.80) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% IO .016(0.40) Peak Forward Surge Current 8.3 ms single half sine-wave .008(0.20) IFSM Maximum Average Forward Rectified Current superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) Dimensions in inches and (millimeters) -55 to +125 TJ Operating Temperature Range Storage Temperature Range CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ @T A=125℃ 40 120 Am Am ℃/ P -55 to +150 ℃ - 65 to +175 TSTG Rated DC Blocking Voltage 1.0 30 ℃ SOLDERING FOOTPRINT* SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN VF 0.65 0.025 IR 0.65 0.50 0.025 0.70 0.85 0.5 10 0.9 0.92 Vo mA NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 1.9 0.075 2- Thermal Resistance From Junction to Ambient 0.9 0.035 0.7 0.028 2012-06 2012-11 SCALE 10:1 mm inches WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.