Silicon Schottky Diodes BAT 68 … ● For mixer applications in the VHF/UHF range ● For high-speed switching ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration (tape and reel) Package1) BAT 68 83 Q62702-A926 SOT-23 BAT 68-04 84 Q62702-A4 BAT 68-05 85 Q62702-A15 BAT 68-06 86 Q62702-A19 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 02.96 BAT 68 … ● For mixer applications in the VHF/UHF range ● For high-speed switching ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration (tape and reel) Package1) BAT 68-07 87 Q62702-A44 SOT-143 Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage VR 8 V Forward current IF 130 mA Power dissipation, TS ≤ 60 ˚C Ptot 150 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg – 55 … + 150 Junction - ambient2) Rth JA ≤ 750 Junction - soldering point Rth JS ≤ 590 Thermal Resistance 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group 2 K/W BAT 68 … Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 8 – – – – – – 0.1 1.2 – – – – 340 500 Breakdown voltage IR = 10 µA VBR Reverse current VR = 1 V VR = 1 V, TA = 60 ˚C IR Forward voltage 1) IF = 1 mA IF = 10 mA VF Diode capacitance VR = 0, f = 1 MHz CT – – 1 pF Differential forward resistance IF = 5 mA, f = 10 kHz rf – – 10 Ω 1) µA mV Forward voltage matching, types -04, -05, -06, -07 IF = 10 mA, ∆VF = 20 mV max. Semiconductor Group 3 V BAT 68 … Forward current IF = f (VF) Forward current IF = f (TS, TA*) *Package mounted on alumina BAT 68-04, -05, -06, -07 Forward current IF = f (TS; TA*) *Package mounted on alumina BAT 68 Reverse current IR = f (VR) Semiconductor Group 4 BAT 68 … Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group Differential forward resistance rf = f (IF) f = 10 kHz 5