WILLAS FM120-M+ BC86 SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V THRU FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H surface mounted application in order to • Low profile TRANSISTOR (PNP) SOT-89 optimize board space. FEATURES • Low power loss, high efficiency. 0.146(3.7) 0.130(3.3) current capability, low forward voltage drop. • High NPN Complement to BC868 • High surge capability. Low Voltage • Guardring for overvoltage protection. High Current high-speed switching. • Ultra Silicon epitaxial planar chip, metal silicon junction. • Pb-Free package is available • Lead-free parts meet environmental standards of RoHS product for packing code suffix ”G” MIL-STD-19500 /228 RoHS product for packing code suffix "G" • Halogen free product for packing code suffix “H” Halogen free product for packing Moisture Sensitivity Level 1 code suffix "H" 0.012(0.3) Typ. 1. BASE 0.071(1.8) 0.056(1.4) 2. COLLECTOR 3. EMITTER Mechanical data MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) : UL94-V0 rated flame retardant • Epoxy • Terminals :Plated terminals, solderable per MIL-STD-750 Collector-Base Voltage VCBO Method 2026 Collector-Emitter Voltage VCEO -32 V Dimensions in inches and (millimeters) -5 V -1 A 500 mW MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Thermal Resistance From Junction To Ambient 250 RθJA ℃/W Ratings at 25℃ ambient temperature unless otherwise specified. Junction Temperature Tj Single phase half wave, 60Hz, resistive of inductive load. Storage Tstg For capacitive load, derateTemperature current by 20% RATINGS 150 ℃ -55~+150 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Pr el Marking Code ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise 12 13 14specified) 15 Maximum Recurrent Peak Reverse Voltage 30 40 50 18 80 10 100 115 150 120 200 14 Test 21 28 conditions 35 42 Min 56 Typ 70 Max 105 Unit 140 Collector-base breakdown voltage VDC V(BR)CBO 20 30 =0 40 IC=-100µA,I E 50 60 -32 80 100 150 V 200 Maximum Average Forward Rectified Current IO V(BR)CEO IC=-1mA,IB=0 Collector-emitter breakdown voltage Peak Forward Surge Current 8.3 msvoltage single half sine-wave V(BR)EBO Emitter-base breakdown IFSM Collector cut-off current ICBO VCB=-25V,IE=0 Emitter cut-off current Typical Junction Capacitance (Note 1) IC EBO J VEB=-5V,I C=0 Operating Temperature Range hTFE(1) J -55 to +125 VCE=-10V, IC=-5mA Storage Temperature DC current gain Range TSTG h VCE=-1V, IC=-0.5A FE(2) CHARACTERISTICS Collector-emitter saturation voltage Maximum Forward Voltage at 1.0A DC hFE(3) SYMBOL BaseDC -emitter Rated Blockingvoltage Voltage @T A=125℃ IC=-1A,IB=-0.1A 0.50 IR VCE=-1V, IC=-1A VBE frequency -530 V 40 120 -0.1 µA -0.1 µA -55 to +150 50 - 65 to +175 100 0.70 375 fT 0.85 -0.5 0.5 10 VCE=-10V, IC=-5mA NOTES: Transition V VCE=-1V, IC=-1A 60 FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VCE(sat) VF Maximum Average Reverse Current at @T A=25℃ 1.0 -20 IE=-100µA,IC=0 RΘJA Typical Thermal Resistance (Note 2) VCE=-5V,IC=-10mA, f=100MHz 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 16 60 VRMS Symbol superimposed on rated load (JEDEC method) 20 VRRM Maximum DC Blocking Voltage Maximum RMSParameter Voltage 0.031(0.8) Typ. V im ina Collector Power Dissipation PC Unit 0.031(0.8) Typ. -20 • Polarity : Indicated by cathode band Emitter-Base Voltage VEBO • Mounting Position : Any Current IC• WeightCollector : Approximated 0.011 gram Value , ry • Case : Molded plastic, SOD-123H Symbol Parameter 0.040(1.0) 0.024(0.6) -1 -0.62 V 0.9 0.92 V V MHz 40 2- Thermal Resistance From Junction to Ambient CLASSIFICATION OF hFE(2) 2012-06 2012-10 RANK BC869 BC869-16 BC869-25 RANGE 100–375 100–250 160–375 MARKING CEC CGC CHC WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BC86 SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V THRU FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-89 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" .181(4.60) Halogen free product for packing code suffix "H" Mechanical data .173(4.39) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .061REF 0.040(1.0) 0.024(0.6) .063(1.60) 0.031(0.8) Typ. ry 0.031(0.8) Typ. Method 2026 (1.55)REF • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .055(1.40) im ina Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .167(4.25) .154(3.91) Marking Code RATINGS .102(2.60) FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH .091(2.30) 12 20 V.023(0.58) RRM 13 30 Maximum RMS Voltage VRMS 21 28 Maximum DC Blocking Voltage VDC 30 40 Maximum Average Forward Rectified Current IO IFSM Pr el Maximum Recurrent Peak Reverse Voltage .016(0.40) 14 .047(1.2) Peak Forward Surge Current 8.3 ms single half sine-wave .031(0.8) superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range .060TYP (1.50)TYP CHARACTERISTICS Maximum Forward Voltage at 1.0A DC TSTG 15 50 16 60 18 80 10 100 115 150 120 200 35 42 50 60 56 70 105 140 80 100 150 200 1.0 30 40 120 -55 to +125 .197(0.52) .013(0.32) -55 to +150 - 65 to +175 .017(0.44) .014(0.35) .118TYP FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH 0.9 0.92 V F 0.50 0.70 0.85 (3.0)TYP Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 20 14 40 @T A=125℃ 0.5 IR 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-10 Rev.C WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ BC86 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Features Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to SOD-123H optimize board space. Ordering Information: high efficiency. • Low power loss, 0.146(3.7) 0.130(3.3) low forward voltage drop. • High current capability, Device PN Packing • High surge capability. (3) (1) (2) –SOT89 G ‐WS Tape& Reel: 1 Kpcs/Reel Guardring for overvoltage protection. • Part Number switching. • Ultra high-speed Note: (1) CASE:SOT‐89 • Silicon epitaxial planar chip, metal silicon junction. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” parts meet environmental standards of • Lead-free MIL-STD-19500 /228 RoHS (3) product CLASSIFICATION OF h FE RANK for packing code suffix "G" • Halogen free product for packing code suffix "H" 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.031(0.8) Typ. 0.031(0.8) Typ. ina ry • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS im changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS Marking Code 12 13 14 15 16 18 10 115 120 for any errors or inaccuracies. Data sheet specifications and its information 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Vo VRRM contained are intended to provide a product description only. "Typical" parameters Vo 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Vo Maximumwhich may be included on WILLAS data sheets and/ or specifications can DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC Am Maximumand do vary in different applications and actual performance may vary over time. Average Forward Rectified Current IO 1.0 Peak Forward Surge Current 8.3 ms single half sine-wave WILLAS does not assume any liability arising out of the application or 30 IFSM Am superimposed on rated load (JEDEC method) use of any product or circuit. RΘJA ℃ 40 Typical Thermal Resistance (Note 2) P 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range TJ ℃ WILLAS products are not designed, intended or authorized for use in medical, - 65 to +175 Storage Temperature Range TSTG ℃ Pr el Ratings at 25℃WILLAS reserves the right to make changes without notice to any product ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. specification herein, to make corrections, modifications, enhancements or other For capacitive load, derate current by 20% life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Vo 0.9 Maximumapplications where a failure or malfunction of component or circuitry may directly Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 0.5 Maximumor indirectly cause injury or threaten a life without expressed written approval Average Reverse Current at @T A=25℃ IR mA 10 @T A=125℃ Rated DC Blocking Voltage of WILLAS. Customers using or selling WILLAS components for use in NOTES: such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- ThermalInc and its subsidiaries harmless against all claims, damages and expenditures Resistance From Junction to Ambient . 2012-06 2012-10 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.