BC869(SOT 89)

WILLAS
FM120-M+
BC86
SOT-89
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
THRU
FM1200-M+
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
surface mounted application in order to
• Low profile
TRANSISTOR
(PNP)
SOT-89
optimize board space.
FEATURES
• Low power loss, high efficiency.





0.146(3.7)
0.130(3.3)
current capability,
low forward voltage drop.
• High
NPN
Complement
to BC868
• High surge capability.
Low
Voltage
• Guardring for overvoltage protection.
High
Current
high-speed switching.
• Ultra
Silicon
epitaxial planar
chip, metal silicon junction.
•
Pb-Free package
is available
• Lead-free parts meet environmental standards of
RoHS
product for packing
code suffix ”G”
MIL-STD-19500
/228
RoHS
product
for
packing
code
suffix "G"
•
Halogen free product for packing
code suffix “H”
Halogen
free
product
for
packing
Moisture Sensitivity Level 1 code suffix "H"
0.012(0.3) Typ.
1. BASE
0.071(1.8)
0.056(1.4)
2. COLLECTOR
3. EMITTER
Mechanical data
MAXIMUM
RATINGS
(Ta=25℃
unless otherwise noted)
: UL94-V0 rated
flame retardant
• Epoxy
• Terminals
:Plated terminals, solderable per MIL-STD-750
Collector-Base
Voltage
VCBO
Method 2026
Collector-Emitter Voltage
VCEO
-32
V
Dimensions in inches and (millimeters)
-5
V
-1
A
500
mW
MAXIMUM
RATINGS AND ELECTRICAL CHARACTERISTICS
Thermal Resistance From Junction To Ambient
250
RθJA
℃/W
Ratings at 25℃ ambient temperature unless otherwise specified.
Junction Temperature
Tj
Single phase half wave, 60Hz, resistive of inductive load.
Storage
Tstg
For capacitive
load,
derateTemperature
current by 20%
RATINGS
150
℃
-55~+150
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Pr
el
Marking Code
ELECTRICAL
CHARACTERISTICS (Ta=25℃ unless
otherwise
12
13
14specified)
15
Maximum Recurrent Peak Reverse Voltage
30
40
50
18
80
10
100
115
150
120
200
14 Test 21
28
conditions
35
42
Min
56
Typ
70
Max
105
Unit
140
Collector-base breakdown voltage
VDC
V(BR)CBO
20
30 =0 40
IC=-100µA,I
E
50
60
-32
80
100
150
V
200
Maximum Average Forward Rectified Current
IO
V(BR)CEO
IC=-1mA,IB=0
Collector-emitter breakdown voltage
Peak
Forward Surge
Current 8.3 msvoltage
single half sine-wave V(BR)EBO
Emitter-base
breakdown
IFSM
Collector cut-off current
ICBO
VCB=-25V,IE=0
Emitter cut-off current
Typical Junction Capacitance (Note 1)
IC
EBO
J
VEB=-5V,I C=0
Operating Temperature Range
hTFE(1)
J
-55 to +125
VCE=-10V,
IC=-5mA
Storage
Temperature
DC current
gain Range
TSTG
h
VCE=-1V, IC=-0.5A
FE(2)
CHARACTERISTICS
Collector-emitter
saturation
voltage
Maximum
Forward Voltage
at 1.0A DC
hFE(3)
SYMBOL
BaseDC
-emitter
Rated
Blockingvoltage
Voltage
@T A=125℃
IC=-1A,IB=-0.1A
0.50
IR
VCE=-1V, IC=-1A
VBE
frequency
-530
V
40
120
-0.1
µA
-0.1
µA
-55 to +150
50
- 65 to +175
100
0.70
375
fT
0.85 -0.5
0.5
10
VCE=-10V, IC=-5mA
NOTES:
Transition
V
VCE=-1V, IC=-1A
60
FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VCE(sat)
VF
Maximum Average Reverse Current at @T A=25℃
1.0
-20
IE=-100µA,IC=0
RΘJA
Typical Thermal Resistance (Note 2)
VCE=-5V,IC=-10mA, f=100MHz
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
16
60
VRMS
Symbol
superimposed on rated load (JEDEC method)
20
VRRM
Maximum DC Blocking Voltage
Maximum RMSParameter
Voltage
0.031(0.8) Typ.
V
im
ina
Collector Power Dissipation
PC
Unit
0.031(0.8) Typ.
-20
• Polarity : Indicated by cathode band
Emitter-Base Voltage
VEBO
• Mounting Position : Any
Current
IC• WeightCollector
: Approximated 0.011 gram
Value
,
ry
• Case : Molded plastic, SOD-123H
Symbol
Parameter
0.040(1.0)
0.024(0.6)
-1
-0.62
V
0.9
0.92
V
V
MHz
40
2- Thermal Resistance From Junction to Ambient
CLASSIFICATION
OF hFE(2)
2012-06
2012-10
RANK
BC869
BC869-16
BC869-25
RANGE
100–375
100–250
160–375
MARKING
CEC
CGC
CHC
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BC86
SOT-89
Plastic-Encapsulate
Transistors
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
THRU
FM1200-M+
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
Outline Drawing
SOT-89
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
.181(4.60)
Halogen free product for packing
code suffix "H"
Mechanical data
.173(4.39)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable
per MIL-STD-750
.061REF
0.040(1.0)
0.024(0.6)
.063(1.60)
0.031(0.8) Typ.
ry
0.031(0.8) Typ.
Method 2026
(1.55)REF
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
.055(1.40)
im
ina
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.167(4.25)
.154(3.91)
Marking Code
RATINGS
.102(2.60)
FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH FM140-MH
.091(2.30)
12
20
V.023(0.58)
RRM
13
30
Maximum RMS Voltage
VRMS
21
28
Maximum DC Blocking Voltage
VDC
30
40
Maximum Average Forward Rectified Current
IO
IFSM
Pr
el
Maximum Recurrent Peak Reverse Voltage
.016(0.40)
14
.047(1.2)
Peak Forward Surge Current 8.3 ms single half sine-wave
.031(0.8)
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
.060TYP
(1.50)TYP
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
TSTG
15
50
16
60
18
80
10
100
115
150
120
200
35
42
50
60
56
70
105
140
80
100
150
200
1.0
30
40
120
-55 to +125
.197(0.52)
.013(0.32)
-55 to +150
- 65 to +175
.017(0.44)
.014(0.35)
.118TYP
FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH
0.9
0.92
V
F
0.50
0.70
0.85
(3.0)TYP
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
20
14
40
@T A=125℃
0.5
IR
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-10
Rev.C
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BC86 THRU
FM1200-M+
SOT-89
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Features
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
Ordering
Information:
high efficiency.
• Low power loss,
0.146(3.7)
0.130(3.3)
low forward voltage drop.
• High current capability,
Device PN Packing • High surge capability.
(3)
(1) (2)
–SOT89 G ‐WS Tape& Reel: 1 Kpcs/Reel Guardring for overvoltage protection.
• Part Number
switching.
• Ultra high-speed
Note: (1)
CASE:SOT‐89 • Silicon epitaxial planar chip, metal silicon junction.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” parts meet environmental standards of
• Lead-free
MIL-STD-19500 /228
RoHS
(3) product
CLASSIFICATION OF h
FE RANK for packing code suffix "G"
•
Halogen free product for packing code suffix "H"
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.031(0.8) Typ.
0.031(0.8) Typ.
ina
ry
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Dimensions in inches and (millimeters)
***Disclaimer***
MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
im
changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
RATINGS
Marking Code
12
13
14
15
16
18
10
115
120
for any errors or inaccuracies. Data sheet specifications and its information 20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Vo
VRRM
contained are intended to provide a product description only. "Typical" parameters Vo
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
Vo
Maximumwhich may be included on WILLAS data sheets and/ or specifications can DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
Am
Maximumand do vary in different applications and actual performance may vary over time. Average Forward Rectified Current
IO
1.0
Peak Forward
Surge Current 8.3 ms single half sine-wave
WILLAS does not assume any liability arising out of the application or 30
IFSM
Am
superimposed on rated load (JEDEC method)
use of any product or circuit. RΘJA
℃
40
Typical Thermal Resistance (Note 2)
P
120
Typical Junction
Capacitance (Note 1)
CJ
-55
to
+125
-55
to
+150
Operating Temperature Range
TJ
℃
WILLAS products are not designed, intended or authorized for use in medical, - 65 to +175
Storage Temperature Range
TSTG
℃
Pr
el
Ratings at 25℃WILLAS reserves the right to make changes without notice to any product ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
specification herein, to make corrections, modifications, enhancements or other For capacitive load, derate current by 20%
life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Vo
0.9
Maximumapplications where a failure or malfunction of component or circuitry may directly Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
0.5
Maximumor indirectly cause injury or threaten a life without expressed written approval Average Reverse Current at @T A=25℃
IR
mA
10
@T A=125℃
Rated DC Blocking Voltage
of WILLAS. Customers using or selling WILLAS components for use in NOTES:
such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- ThermalInc and its subsidiaries harmless against all claims, damages and expenditures
Resistance From Junction to Ambient
. 2012-06
2012-10
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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