IPD800N06N G OptiMOS® Power-Transistor Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level V DS 60 V R DS(on),max 80 mΩ ID 16 A • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Type IPD800N06N G Package PG-TO252-3 Marking 800N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 16 T C=100 °C 11 Unit A Pulsed drain current I D,pulse T C=25 °C1) 64 Avalanche energy, single pulse E AS I D=16 A, R GS=25 Ω 43 mJ Reverse diode dv /dt dv /dt I D=16 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C 6 kV/µs Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg T C=25 °C IEC climatic category; DIN IEC 68-1 1) ±20 V 47 W -55 ... 175 °C 55/175/56 See figure 3 Rev.1.3 page 1 2008-09-01 IPD800N06N G Parameter Values Symbol Conditions Unit min. typ. max. - - 3.2 minimal footprint - - 75 6 cm2 cooling area2) - - 50 Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 - - Gate threshold voltage V GS(th) V DS=V GS, I D=16 µA 2.1 3 4 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C - 0.01 1 V DS=60 V, V GS=0 V, T j=125 °C - 1 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=16 A - 54 80 mΩ Gate resistance RG - 1 - Ω Transconductance g fs 7 14 - S |V DS|>2|I D|R DS(on)max, I D=16 A 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev.1.3 page 2 2008-09-01 IPD800N06N G Parameter Values Symbol Conditions Unit min. typ. max. - 280 370 - 75 100 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 22 33 Turn-on delay time t d(on) - 7 11 Rise time tr - 38 57 Turn-off delay time t d(off) - 22 33 Fall time tf - 27 40 Gate to source charge Q gs - 1.7 2.2 Gate charge at threshold Q g(th) - 0.8 1.1 Gate to drain charge Q gd - 3.3 4.9 Switching charge Q sw - 4.1 6.0 Gate charge total Qg - 7 10 Gate plateau voltage V plateau - 6.0 - Output charge Q oss - 4 5 - - 16 - - 64 - 0.97 1.3 V - 25 31 ns - 35 44 nC V GS=0 V, V DS=30 V, f =1 MHz V DD=30 V, V GS=10 V, I D=16 A, R G=39 Ω pF ns Gate Charge Characteristics3) V DD=30 V, I D=16 A, V GS=0 to 10 V V DD=30 V, V GS=10 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 3) T C=25 °C V GS=0 V, I F=16 A, T j=25 °C V R=30 V, I F=I S, di F/dt =100 A/µs A See figure 16 for gate charge parameter definition Rev.1.3 page 3 2008-09-01 IPD800N06N G 1 Power dissipation 2 Drain current P tot=f(T C); V GS≥6 V I D=f(T C); V GS≥10 V 20 40 16 30 12 I D [A] P tot [W] 50 20 8 10 4 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 102 101 1 µs 10 µs limited by on-state resistance 100 µs 101 DC 0.5 Z thJC [K/W] I D [A] 1 ms 10 ms 100 0.2 0.1 100 0.05 0.02 0.01 10-1 10-1 -1 10 0 1 10 10 2 10 V DS [V] Rev.1.3 single pulse t p [s] page 4 2008-09-01 IPD800N06N G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 250 30 20 V 7V 10 V 5V 200 20 5.5 V R DS(on) [mΩ] I D [A] 6.5 V 6V 150 6V 100 6.5 V 10 7V 5.5 V 10 V 50 20 V 5V 4.5 V 0 0 1 2 0 3 4 0 5 10 V DS [V] 20 30 20 30 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 20 20 16 15 g fs [S] I D [A] 12 10 8 5 4 175 °C 25 °C 0 0 0 2 4 6 0 Rev.1.3 10 I D [A] V GS [V] page 5 2008-09-01 IPD800N06N G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=16 A; V GS=10 V V GS(th)=f(T j); V GS=V DS 200 5 160 4 120 3 V GS(th) [V] R DS(on) [mΩ] parameter: I D 98 % 80 160 µA 16 µA 2 typ 40 1 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 103 102 25 °C 175°C 98% 25°C 98% Ciss 175 °C 102 I F [A] C [pF] 101 Coss 100 Crss 101 10-1 0 10 20 30 40 50 V DS [V] Rev.1.3 0 1 2 3 V SD [V] page 6 2008-09-01 IPD800N06N G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=16 A pulsed parameter: T j(start) parameter: V DD 102 12 30 V 10 48 V 12 V 25 °C 1 10 V GS [V] I AV [A] 8 100 °C 6 4 150 °C 2 100 0 100 101 102 103 0 2 4 6 8 10 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 75 V GS Qg V BR(DSS) [V] 70 65 V g s(th) 60 55 Q g (th) Q sw Q gs 50 -60 -20 20 60 100 140 Q gate Q gd 180 T j [°C] Rev.1.3 page 7 2008-09-01 IPD800N06N G PG-TO252-3: Outline Rev.1.3 page 8 2008-09-01 IPD800N06N G Rev.1.3 page 9 2008-09-01