IPD127N06L G OptiMOS® Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level 60 R DS(on),max 12.7 ID 50 V mΩ A • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant PG-TO252-3 Type IPD127N06L G Package PG-TO252-3 Marking 127N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C1) 50 T C=100 °C 48 Pulsed drain current I D,pulse T C=25 °C2) 200 Avalanche energy, single pulse E AS I D=50 A, R GS=25 Ω 240 Reverse diode dv /dt dv /dt I D=50 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C 6 Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg T C=25 °C IEC climatic category; DIN IEC 68-1 A mJ kV/µs ±20 V 136 W -55 ... 175 °C 55/175/56 1) Current is limited by bondwire; with an R thJC=1.1 K/W the chip is able to carry 64 A. 2) See figure 3 Rev. 1.2 Unit page 1 2008-07-22 IPD127N06L G Parameter Values Symbol Conditions Unit min. typ. max. - - 1.1 minimal footprint - - 75 6 cm2 cooling area3) - - 50 Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 - - Gate threshold voltage V GS(th) V DS=V GS, I D=80 µA 1.2 1.6 2 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C - 0.01 1 V DS=60 V, V GS=0 V, T j=125 °C - 1 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=33 A - 12.5 16.7 mΩ V GS=10 V, I D=50 A - 10.0 12.7 - 1.5 - Ω 35 69 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=50 A 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.2 page 2 2008-07-22 IPD127N06L G Parameter Values Symbol Conditions Unit min. typ. max. - 1700 2300 - 410 550 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 110 165 Turn-on delay time t d(on) - 9 13 Rise time tr - 14 21 Turn-off delay time t d(off) - 39 58 Fall time tf - 13 21 Gate to source charge Q gs - 6 9 Gate charge at threshold Q g(th) - 3 4 Gate to drain charge Q gd - 17 26 Switching charge Q sw - 21 31 Gate charge total Qg - 52 69 Gate plateau voltage V plateau - 3.7 - Output charge Q oss - 16 21 - - 50 - - 200 - 0.93 1.3 V - 52 65 ns - 99 125 nC V GS=0 V, V DS=30 V, f =1 MHz V DD=30 V, V GS=10 V, I D=50 A, R G=3.6 Ω pF ns Gate Charge Characteristics4) V DD=30 V, I D=50 A, V GS=0 to 10 V V DD=30 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 4) T C=25 °C V GS=0 V, I F=50 A, T j=25 °C V R=30 V, I F=I S, di F/dt =100 A/µs A See figure 16 for gate charge parameter definition Rev. 1.2 page 3 2008-07-22 IPD127N06L G 1 Power dissipation 2 Drain current P tot=f(T C); V GS≥6 V I D=f(T C); V GS≥10 V 160 60 140 50 120 40 I D [A] P tot [W] 100 80 30 60 20 40 10 20 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 101 1 µs limited by on-state resistance 10 µs 2 10 100 µs 101 0.5 Z thJC [K/W] I D [A] 100 1 ms DC 10 ms 0.2 0.1 10-1 0.05 0.02 100 0.01 10-1 10-2 -1 10 0 1 10 10 2 10 V DS [V] Rev. 1.2 single pulse 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2008-07-22 IPD127N06L G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 50 200 10 V 180 5.5 V 40 160 5V 140 R DS(on) [mΩ] 3V I D [A] 120 4.5 V 100 80 4V 3.5 V 30 20 4V 60 4.5 V 5V 5.5 V 10 40 10 V 3.5 V 20 3V 0 0 0 0 1 2 0 0 3 20 40 V DS [V] 60 80 100 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 80 100 90 80 60 70 g fs [S] I D [A] 60 40 50 40 30 20 20 175 °C 10 25 °C 0 0 0 1 2 3 4 V GS [V] Rev. 1.2 0 20 40 60 I D [A] page 5 2008-07-22 IPD127N06L G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=50 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 40 3 30 V GS(th) [V] R DS(on) [mΩ] 2 20 98% 810 µA 81 µA 1 typ 10 0 0 -60 -20 20 60 100 140 180 -60 -20 20 T j [°C] 60 100 140 180 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 103 10000 Ciss 102 175 °C 25 °C 1000 I F [A] C [pF] Coss 50 A 1 10 Crss 100 100 10-1 10 0 10 20 30 40 50 V DS [V] Rev. 1.2 0 0.5 1 1.5 2 V SD [V] page 6 2008-07-22 IPD127N06L G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=50 A pulsed parameter: T j(start) parameter: V DD 100 12 12 V 30 V 10 25 °C 100 °C 48 V 8 V GS [V] I AV [A] 150 °C 10 6 4 2 1 0 1 10 100 1000 0 10 20 30 40 50 60 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 75 V GS Qg V BR(DSS) [V] 70 65 V g s(th) 60 55 Q g (th) Q sw Q gs 50 -60 -20 20 60 100 140 Q gate Q gd 180 T j [°C] Rev. 1.2 page 7 2008-07-22 IPD127N06L G PG-TO252-3: Outline packaging: Rev. 1.2 page 8 2008-07-22 IPD127N06L G Rev. 1.2 page 9 2008-07-22