BSP171P SIPMOS® Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -60 V R DS(on),max 0.3 Ω ID -1.9 A • Logic level • Avalanche rated • dv /dt rated PG-SOT223 • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogenfree according to IEC61249221 Type Package Tape and Reel Information Marking Packaging BSP171P PG-SOT223 H6327: 1000 pcs/reel BSP171P Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit steady state Continuous drain current ID T A=25 °C1) -1.9 T A=70 °C1) -1.5 -7.6 A Pulsed drain current I D,pulse T A=25 °C Avalanche energy, single pulse E AS I D=-1.9 A, R GS=25 Ω 70 mJ Reverse diode dv /dt dv /dt I D=-1.9 A, V DS=-48 V, di /dt =-200 A/µs, T j,max=150 °C -6 kV/µs Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg T A=25 °C1) ±20 V 1.8 W -55 ... 150 °C IEC climatic category; DIN IEC 68-1 55/150/56 ESD Class; JESD22-A114-HBM Class 1a Rev 2.6 page 1 2012-11-26 BSP171P Parameter Values Symbol Conditions Unit min. typ. max. - - 25 minimal footprint, steady state - - 110 6 cm2 cooling area1), steady state - - 70 Thermal characteristics Thermal resistance, junction - soldering point R thJS Thermal resistance, junction - ambient R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 µA -60 - - Gate threshold voltage V GS(th) V DS=V GS, I D=-460 µA -1 -1.5 -2 Zero gate voltage drain current I DSS V DS=-60 V, V GS=0 V, T j=25 °C - -0.1 -1 V DS=-60 V, V GS=0 V, T j=125 °C - -10 -100 V µA Gate-source leakage current I GSS V GS=-20 V, V DS=0 V - -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-4.5 V, I D=-1.5 A - 0.3 0.45 Ω V GS=-10 V, I D=-1.9 A - 0.21 0.3 1.4 2.7 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-1.5 A S 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev 2.6 page 2 2012-11-26 BSP171P Parameter Values Symbol Conditions Unit min. typ. max. - 365 460 - 105 135 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 40 55 Turn-on delay time t d(on) - 6 8 Rise time tr - 25 33 Turn-off delay time t d(off) - 208 276 Fall time tf - 87 130 Gate to source charge Q gs - -1.2 -1.6 Gate to drain charge Q gd - -5 -7 Gate charge total Qg - -13 -20 Gate plateau voltage V plateau - -3 - Output charge Q oss - -5 -7 - - -1.9 - - -7.6 - -0.84 -1.1 V - 80 120 ns - -125 -190 nC V GS=0 V, V DS=-25 V, f =1 MHz V DD=-25 V, V GS=-10 V, I D=-1.9 A, R G=6 Ω pF ns Gate Charge Characteristics2) V DD=-48 V, I D=1.9 A, V GS=0 to -10 V V DD=-15 V, V GS=0 V nC V Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr T A=25 °C V GS=0 V, I F=1.9 A, T j=25 °C A V R=-30 V, I F=|I S|, di F/dt =100 A/µs Reverse recovery charge 2) Q rr See figure 16 for gate charge parameter definition Rev 2.6 page 3 2012-11-26 BSP171P 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); |V GS|≥10 V 1.5 1.5 -I D [A] 2 P tot [W] 2 1 1 0.5 0.5 0 0 0 40 80 120 0 160 40 T A [°C] 80 120 160 T A [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C1); D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 101 102 10 µs 100 µs 1 ms 0.5 10 ms 0.2 100 101 100 ms -I D [A] Z thJS [K/W] 0.1 limited by on-state resistance 10-1 DC 0.02 100 10-2 0.01 single pulse 10-1 0.1 1 10 100 -V DS [V] Rev 2.6 0.05 10-5 10-4 10-3 10-2 10-1 100 101 102 t p [s] page 4 2012-11-26 BSP171P 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 5 -5.5 V 600 -4.5 V -4 V -5 V -3 V -10 V 500 4 -3.5 V 400 R DS(on) [mΩ] -I D [A] 3 -3.5 V 2 -4 V -4.5 V 300 -5 V -5.5 V -10 V 200 -3 V 1 100 -2.5 V 0 0 0 1 2 3 4 0 5 1 -V DS [V] 2 3 4 3 4 -I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 6 5 5 4 4 g fs [S] -I D [A] 3 3 2 2 1 1 C °125 C °25 0 0 0 1 2 3 4 5 Rev 2.6 0 1 2 -I D [A] -V GS [V] page 5 2012-11-26 BSP171P 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-1.9 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-460 µA 3 500 2.5 400 98 % 300 -V GS(th) [V] R DS(on) [mΩ] 2 200 typ. max. 1.5 typ. min. 1 100 0.5 0 0 -60 -20 20 60 100 140 -60 180 -20 20 60 T j [°C] 100 140 180 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 103 101 25 °C, typ 150 °C, typ 150 °C, 98% Ciss 100 25 °C, 98% I F [A] C [pF] Coss 102 Crss 10-1 101 10-2 0 10 20 30 -V DS [V] Rev 2.6 0 0.5 1 1.5 -V SD [V] page 6 2012-11-26 BSP171P 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-1.9 A pulsed parameter: T j(start) parameter: V DD 10 12 0.5 VBR(DSS) 10 C °25 8 0.2 VBR(DSS) V GS [V] -I AV [A] 0.8 VBR(DSS) C °100 1 C °125 6 4 2 0.1 0 1 10 100 1000 0 5 10 15 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=-1 mA 70 V GS Qg 65 -V BR(DSS) [V] 60 55 V g s(th) 50 45 Q g (th) Q sw Q gs 40 -60 -20 20 60 100 140 Q gate Q gd 180 T j [°C] Rev 2.6 page 7 2012-11-26 BSP171P Package Outline SOT-223: Outline Footprint Packaging Tape Dimensions in mm Rev 2.6 page 8 2012-11-26 BSP171P Rev 2.6 page 9 2012-11-26