MS4N65

MS4N65
N-Channel Enhancement Mode Power MOSFET
Description
The MS4N65 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
• BVDSS=650V typically @ Tj=150°C
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Application
• Open Framed Power Supply
• Adapter
• STB
Packing & Order Information
Graphic symbol
50/Tube ; 1,000/Box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Value
Unit
VDSS
Drain to Source Voltage
650
V
VGS
Gate to Source Voltage
±30
V
Continuous Drain Current (TC=25°C)
3.6
Continuous Drain Current (TC=100°C)
2.3
IDM
Drain Current Pulsed
16.4
A
EAS
Single Pulsed Avalanche Energy
240
mJ
EAR
Repetitive Avalanche Energy
10
mJ
dv/dt
Peak Diode Recovery dv/dt
5.5
V/ns
ID
A
• Drain current limited by maximum junction temperature
Publication Order Number: [MS4N65]
© Bruckewell Technology Corporation Rev. A -2014
MS4N65
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
TL
TPKG
PD
Value
Unit
300
°C
260
°C
Total Power Dissipation(@TC = 25 °C) 100 W
100
W
Derating Factor above 25 °C
0.8
W/°C
-55 to +150
°C
150
°C
TL Maximum Temperature for Soldering @ Lead at 0.125
in(0.318mm) from case for 10 seconds
TPKG Maximum Temperature for Soldering @ Package Body for
10 seconds
TSTG
Operating Junction Temperature
TJ
Storage Temperature
Note:
1.Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS=4A, VDD=50V, L=8mH, VG=10V, starting TJ=+25°C.
3. ISD≤4A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25°C.
Thermal Characteristics
Value
Typ.
Symbol
Parameter
RθJC
Thermal Resistance,Junction-to-Case
--
--
1.25
°C/W
RθJA
Thermal Resistance,Junction-to-Ambient
--
--
62.5
°C/W
Min.
Units
Max.
Static Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V , ID = 250μA
650
--
--
V
△BVDSS
Breakdown Voltage Temperature
ID= 250μA, Referenced
to 25°C
--
0.6
--
V/°C
/△TJ
Coefficient
VGS(th)
Gate Threshold Voltage
VDS = VGS , ID = 250 uA
2.0
--
4.0
V
IDSS
Drain-Source Leakage Current
--
--
1
10
uA
nA
IGSS
Gate-Source Leakage,Forward
VGS = ±30
--
--
100
nA
VGS = 10 V , ID = 1.8 A
--
2.4
2.9
Ω
Min
Typ.
Max.
Units
--
15
20
nC
--
2.8
--
nC
--
6.0
--
nC
RDS(ON)
Static Drain-Source
On-state Resis-tance
Dynamic Characteristics
Symbol
Parameter
Qg
Qgs
Qgd
VDS = 650 V , VGS = 0 V
VDS = 520 V , TC = 125°C
Test Conditions
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(Miller Charge)
Publication Order Number: [MS4N65]
VDS = 520 V ,
VGS = 10 V ,
ID = 3.6 A
© Bruckewell Technology Corporation Rev. A -2014
MS4N65
N-Channel Enhancement Mode Power MOSFET
Dynamic Characteristics
Symbol
Parameter
td(on)
tr
Test Conditions
Turn-On Delay Time
Rise Time
VDD = 325 V, ID = 3.6 A ,
VGS = 10 V ,
Min
Typ.
Max.
Units
--
10
30
ns
--
35
80
ns
--
45
100
ns
--
40
90
ns
td(off)
Turn-Off Delay Time
tf
Fall Time
CISS
Input Capacitance
VGS = 0 V ,
--
560
--
pF
COSS
Output Capacitance
VDS = 25 V ,
--
55
--
pF
CRSS
Reverse Transfer Capacitance
f = 1MHz
--
7
--
pF
Publication Order Number: [MS4N65]
RG = 25 Ω, RD =75 Ω
© Bruckewell Technology Corporation Rev. A -2014
MS4N65
N-Channel Enhancement Mode Power MOSFET
■Characteristics Curve
FIG.1-ON REGION CHARACTERISTICS
FIG.2-TRANSFER CHARACTERISTICS
FIG.3-ON RESISTANCE VARIATION VS DRAIN
FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION
CURRENT AND GATE VOLTAGE
WITH SOURCE CURRENT AND TEMPERATURE
FIG.5-CAPACITANCE CHARACTERISTICS
FIG.6-GATE CHARGE CHARACTERISTICS
Publication Order Number: [MS4N65]
© Bruckewell Technology Corporation Rev. A -2014
MS4N65
N-Channel Enhancement Mode Power MOSFET
■Characteristics Curve
FIG.7-BREAKDOWN VOLTAGE
FIG.8-ON-RESISTANCE VARIATION VS
VARIATION VS TEMPERATURE
TEMPERATURE
FIG.9-MAXIMUM SAFE OPERATING AREA
FIG.10-MAXIMUM DRAIN CURRENT VS CASE
TEMPERATURE
FIG.11-TRANSIENT THERMAL RESPONSE CURVE
Publication Order Number: [MS4N65]
© Bruckewell Technology Corporation Rev. A -2014
MS4N65
N-Channel Enhancement Mode Power MOSFET
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE
WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or
their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or
incompleteness contained in any datasheet or in any other disclosure relating to any product.
Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products
for any particular purpose or the continuing production of any product. To the maximum extent
permitted by applicable law, Bruckewell disclaims
(i) Any and all liability arising out of the application or use of any product.
(ii) Any and all liability, including without limitation special, consequential or incidental damages.
(iii) Any and all implied warranties, including warranties of fitness for particular purpose,
non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on
Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in
generic applications.
Such statements are not binding statements about the suitability of products for a particular
application. It is the customer’s responsibility to validate that a particular product with the properties
described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance
may vary over time.
Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of
purchase, including but not limited to the warranty expressed therein.
Publication Order Number: [MS4N65]
© Bruckewell Technology Corporation Rev. A -2014