IRF IRG4MC30F

PD -94313C
IRG4MC30F
Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
•
•
•
•
•
•
•
C
Electrically Isolated and Hermetically Sealed
Simple Drive Requirements
Latch-proof
Fast Speed operation 3 kHz - 8 kHz
High operating frequency
Switching-loss rating includes all "tail" losses
Ceramic eyelets
VCES = 600V
VCE(on) max =1.7V
G
@VGE = 15V, IC = 15A
E
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
IR Hi-Rel Generation 3 IGBT's
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO-254AA
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
PD @ TC = 25°C
PD @ T C = 100°C
TJ
TSTG
Parameter
Max.
Units
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current ➀
Clamped Inductive Load Current ➁
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
600
28
15
112
112
± 20
75
30
-55 to + 150
V
A
V
W
°C
300 (0.063in./1.6mm from case for 10s)
9.3 (typical)
g
Thermal Resistance
Parameter
R thJC
Junction-to-Case
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Min Typ Max Units
—
—
1.67
Test Conditions
°C/W
1
02/08/02
IRG4MC30F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
600 –––
Emitter-to-Collector Breakdown Voltage S 18 –––
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.63
––– –––
VCE(ON)
Collector-to-Emitter Saturation Voltage
––– –––
––– –––
VGE(th)
Gate Threshold Voltage
3.0 –––
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -11
gfe
Forward Transconductance T
14 –––
–––
–––
ICES
Zero Gate Voltage Collector Current
––– –––
IGES
Gate-to-Emitter Leakage Current
––– –––
V(BR)CES
V(BR)ECS
Max. Units
Conditions
–––
V
VGE = 0V, IC = 1.0 mA
–––
V
VGE = 0V, IC = 1.0 A
––– V/°C VGE = 0V, IC = 1.0 mA
VGE = 15V
1.7
IC = 15A
2.2
V
IC = 28A
See Fig.2, 5
2.7
IC = 15A , TJ = 125°C
6.0
VCE = VGE, IC = 1.0 mA
––– mV/°C VCE = VGE, IC = 250 µA
–––
S
VCE ≥ 15V, IC = 15A
50
VGE = 0V, VCE = 480V
µA
1000
VGE = 0V, VCE = 480V, TJ = 125°C
±100
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Ets
td(on)
tr
td(off)
tr
Ets
LC+LE
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Rise Time
Total Switching Loss
Total Inductance
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.8
Max. Units
Conditions
77
IC = 15A
12
nC VCC = 300V
See Fig. 8
24
VGE = 15V
42
TJ = 25°C
30
IC = 15A, VCC = 480V
ns
300
VGE = 15V, RG = 7.5Ω
300
Energy losses include "tail"
2.0
mJ See Fig. 10, 11, 13, 14
25
TJ = 125°C,
20
ns
IC = 15A, VCC = 480V
450
VGE = 15V, RG = 7.5Ω
550
Energy losses include "tail"
3.0
mJ See Fig. 13, 14
–––
nH Measured from Collector lead (6mm/
0.25in. from package) to Emitter
lead (6mm / 0.25in. from package)
––– 1100 –––
VGE = 0V
––– 74 –––
pF
VCC = 30V
See Fig. 7
––– 14 –––
ƒ = 1.0MHz
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 100µH, RG = 7.5Ω,
S Pulse width ≤ 80µs; duty factor ≤ 0.1%.
T Pulse width 5.0µs, single shot.
(See fig. 13a)
2
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IRG4MC30F
40
Square wave:
Triangular wave:
60% of rated
voltage
Load Current ( A )
30
Clamp voltage:
80% of rated
Ideal diodes
20
For both:
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 19W
10
0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
1000
1000
100
100
10
TJ = 150 °C
TJ = 25 ° C
V
= 15V
20µs PULSE WIDTH
GE
1
0.1
1
10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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TJ = 150 °C
10
TJ = 25 ° C
V
= 50V
5µs PULSE WIDTH
CC
1
5
10
15
20
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4MC30F
2.5
VCE , Collector-to Emitter Voltage (V)
25
20
15
10
5
VGE = 15V
IC = 30A
80µs PULSE WIDTH
2.0
IC = 15A
1.5
IC = 7.5A
1.0
0
25
50
75
100
125
150
-60 -40 -20
T C , Case Temperature ( °C)
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Collector-to-Emitter Voltage vs.
Junction Temperature
10
Thermal Response (Z thJC)
Maximum DC Collector Current(A)
30
1
D = 0.50
0.20
0.10
P DM
0.05
0.1
0.01
0.00001
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D =t 1 / t2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4MC30F
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
C, Capacitance (pF)
1600
Cies
1200
800
Coes
400
C
res
20
VGE , Gate-to-Emitter Voltage (V)
2000
VCC = 300V
400V
I C = 15A
16
12
8
4
0
0
1
10
0
100
10
20
30
40
50
QG , Total Gate Charge (nC)
VCE , Collector-to-Emitter Voltage (V)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
1.55
100
1.50
VCC = 480V
VGE = 15V
RG = 7.5Ω
VGE = 15V
TJ = 25°C
I C = 15A
VCC = 480V
Total Switching Losses (mJ)
Total Switching Losses (mJ)
1.45
1.40
1.35
10
IC = 30A
IC = 15A
IC = 7.5A
1
0.1
0
10
20
30
40
50
R G, Gate Resistance ( Ω )
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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-60 -40 -20
0
20
40
60
80 100 120 140 160
T J, Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4MC30F
1000
6.0
Total Switching Losses (mJ)
5.0
IC, Collector-to-Emitter Current (A)
RG = 7.5Ω
TJ = 125°C
150°C
VGE = 15V
VCC = 480V
4.0
3.0
2.0
1.0
100
SAFE OPERATING AREA
10
1
0.0
5
10
15
20
25
IC , Collector Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
VGE = 20V
T J = 125°
30
0.1
1
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
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IRG4MC30F
L
D .U .T.
VC *
50V
RL =
0 - 720V
1 00 0V
720V
4 X [email protected]°C
480µF
960V
Q
R
* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax )
* Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor
w ill inc rea se to obta in ra ted Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
D river*
D .U .T.
VC
Fig. 14a - Switching Loss
Test Circuit
50V
1000V
Q
* Driver same type
as D.U.T., VC = 720V
R
S
Q
R
9 0%
1 0%
S
VC
90 %
Fig. 14b - Switching Loss
t d (o ff)
10 %
IC 5%
Waveforms
tf
tr
t d (o n )
t=5µ s
E on
E o ff
E ts = ( Eo n +E o ff )
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7
IRG4MC30F
Case Outline and Dimensions — TO-254AA
0.12 [.005]
0.12 [.005]
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
A
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
1
C
2
13.84 [.545]
13.59 [.535]
B
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
1.27 [.050]
1.02 [.040]
1.27 [.050]
1.02 [.040]
A
22.73 [.895]
21.21 [.835]
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
1
2
13.84 [.545]
13.59 [.535]
B
R 1.52 [.060]
3
3
17.40 [.685]
16.89 [.665]
0.84 [.033]
MAX.
4.82 [.190]
3.81 [.150]
4.06 [.160]
3.56 [.140]
3X
1.14 [.045]
0.89 [.035]
3.81 [.150]
3X
1.14 [.045]
0.89 [.035]
2X
0.36 [.014]
0.36 [.014]
B
A
3.81 [.150]
3.81 [.150]
B A
NOTE S:
1. DIME NSIONING & T OLERANCING PER ASME Y14.5M-1994.
2. ALL DIME NSIONS ARE SHOWN IN MILLIMETE RS [INCHES].
3. CONT ROLLING DIMENSION: INCH.
4. CONF ORMS T O JEDEC OUT LINE T O-254AA.
PIN ASSIGNMENTS
1 = COLLECTOR
2 = EMITTER
3 = GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids
that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/02
8
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