BB 804 Silicon Variable Capacitance Diode ● For FM tuners ● Monolithic chip with common cathode for perfect tracking of both diodes ● Uniform "square law" characteristics ● Ideal Hifi tuning device when used in low-distortion, back-to-back configuration Type Ordering Code (tape and reel) BB 804 Q62702-B372 BB 804 Pin Configuration Marking Package SF (see Characteristics for marking of capacitance subgroups) SOT-23 Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage VR 18 V Peak reverse voltage VRM 20 Forward current, TA ≤ 60 ˚C IF 50 mA Operating temperature Top 100 ˚C Storage temperature range Tstg – 65 … + 150 Rth JA ≤ Thermal Resistance Junction - ambient Semiconductor Group 1 600 K/W 10.94 BB 804 Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. – – – – 20 200 Reverse current VR = 16 V VR = 16 V, TA = 60 ˚C IR Diode capacitance VR = 2 V, f = 1 MHz CT 42 – 47.5 pF Capacitance ratio VR = 2 V, 8 V, f = 1 MHz CT2 CT8 1.65 1.71 – – Series resistance VR = 2 V, f = 100 MHz rs – 0.18 – Ω Q factor VR = 2 V, f = 100 MHz Q – 200 – – Temperature coefficient of diode capacitance VR = 2 V, f = 1 MHz TCC – 330 – ppm/K Diode capacitance1) VR = 2 V, f = 1 MHz Subgroups: 0 1 2 3 4 CT 1) nA pF 42 43 44 45 46 – – – – – 43.5 44.5 45.5 46.5 47.5 The capacitance subgroup is marked by the subgroup number printed on the component and the package label. A packaging unit (e.g. 8-mm tape) contains diodes of one subgroup only. Delivery of different capacitance subgroups requires a special agreement. Semiconductor Group 2 BB 804 Diode capacitance CT = f (VR) per diode, f = 1 MHz Capacitance ratio CTref / CT = f (VR) per diode; Vref = 1 V, 2 V, f = 1 MHz Temperature coefficient TCC = f (VR) per diode, f = 1 MHz Semiconductor Group 3