BF998... Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF998 SOT143 1=S 2=D 3=G2 4=G1 - - MOs BF998R SOT143R 1=D 2=S 3=G1 4=G2 - - MRs BF998W SOT343 1=D 2=S 3=G1 4=G2 - - MR Maximum Ratings Parameter Symbol Value Drain-source voltage VDS 12 V Continuous drain current ID 30 mA Gate 1/ gate 2-source current ±IG1/2SM 10 Total power dissipation Ptot TS ≤ 76 °C, BF998, BF998R 200 TS ≤ 94 °C, BF998W 200 Storage temperature Tstg -55 ... 150 Channel temperature Tch 150 Unit °C Thermal Resistance Parameter Symbol Channel - soldering point 1) Rthchs Value Unit K/W BF998, BF998R ≤ 370 BF998W ≤ 280 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Feb-13-2004 BF998... Electrical Characteristics Parameter Symbol Values Unit min. typ. max. V(BR)DS 12 - - ±V (BR)G1SS 8 - 12 ±V (BR)G2SS 8 - 12 ±IG1SS - - 50 nA ±IG2SS - - 50 nA IDSS 5 9 15 mA -VG1S(p) - 0.8 2.5 V -VG2S(p) - 0.8 2 DC Characteristics Drain-source breakdown voltage V ID = 10 µA, VG1S = -4 V, VG2S = -4 V Gate 1 source breakdown voltage ±IG2S = 10 mA, VG2S = VDS = 0 Gate2 source breakdown voltage ±IG2S = 10 mA, VG2S = VDS = 0 Gate 1 source leakage current ±V G1S = 5 V, VG2S = VDS = 0 Gate 2 source leakage current ±V G2S = 5 V, VG2S = VDS = 0 Drain current VDS = 8 V, VG1S = 0 , VG2S = 4 V Gate 1 source pinch-off voltage VDS = 8 V, VG2S = 4 V, ID = 20 µA Gate 2 source pinch-off voltage VDS = 8 V, VG1S = 0 , ID = 20 µA 2 Feb-13-2004 BF998... Electrical Characteristics Symbol Parameter Values Unit min. typ. max. 20 24 - Cg1ss - 2.1 2.5 pF Cg2ss - 1.2 - pF Cdg1 - 25 - fF Cdss - 1.1 - pF AC Characteristics Forward transconductance gfs - VDS = 8 V, I D = 10 mA, VG2S = 4 V Gate1 input capacitance VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 1 MHz Gate 2 input capacitance VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 1 MHz Feedback capacitance VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 1 MHz Output capacitance VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 1 MHz Power gain dB Gp VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 45 MHz - 28 - - 20 - VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz Noise figure dB F VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 45 MHz - 2.8 - - 1.8 - 40 50 - VDS = 8 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz ∆G p Gain control range VDS = 8 V, V G2S = 4 ...-2 V, f = 800 MHz 3 Feb-13-2004 BF998... Total power dissipation Ptot = ƒ(TS) Total power dissipation Ptot = ƒ(TS) BF998, BF998R BF998W 220 220 mA 180 180 160 160 P tot P tot mA 140 140 120 120 100 100 80 80 60 60 40 40 20 20 0 0 15 30 45 60 75 90 105 120 °C 0 0 150 15 30 45 60 75 90 105 120 °C TS Output characteristics ID = ƒ(V DS) VG2S = 4 V Gate 1 forward transconductance g fs = ƒ(ID) VDS = 5V, VG2S = Parameter VG1S = Parameter 26 mA 150 TS 26 mS 0.4V 4V 22 22 20 20 0.2V 18 gfs ID 18 16 0V 14 16 14 12 1V 12 -0.2V 10 10 8 8 -0.4V 6 6 4 4 2 2 0 0 2V 2 4 6 8 10 V 0 0 14 VDS 0V 4 8 12 16 mA 24 ID 4 Feb-13-2004 BF998... Drain current ID = ƒ(V G1S) VDS = 5V Gate 1 forward transconductance g fs1 = ƒ (VG1S) VG2S = Parameter 26 mS 30 4V 2V 4V mA 22 20 2V 20 1V ID G fs 18 16 14 15 12 10 8 10 1V 6 0V 5 4 0V 2 0 -1 -0.75 -0.5 -0.25 0 0.25 V 0 -1 0.75 -0.75 -0.5 -0.25 0 0.25 0.5 VG1S V 1 VG1S Power gain Gps = ƒ (VG2S) Noise figure F = ƒ (VG2S) f = 45 MHz f = 45 MHz 10 30 dB dB 7 20 F Gps 8 6 5 15 4 10 3 2 5 1 0 0 1 2 V 0 0 4 VG2S 1 2 V 4 VG2S 5 Feb-13-2004 BF998... Power gain Gps = ƒ (VG2S) Power gain Gps = ƒ (VG2S) f = 800 MHz f = 800 MHz 20 20 dB 10 G ps G ps dB 10 5 5 0 0 -5 -5 -10 0 1 V 2 -10 0 4 1 V 2 4 VG2S Gate 1 input capacitance Cg1ss = ƒ (VG1S) VG2S Output capacitance C dss = ƒ(VDS) 2.6 4 pF pF 3 Cdss Cg1ss 2.2 2 2.5 1.8 2 1.6 1.5 1.4 1 1.2 0.5 1 -3 -2.6 -2.2 -1.8 -1.4 -1 -0.6 V 0 0 0.2 VG1S 2 4 6 8 V 12 VDS 6 Feb-13-2004