Silicon N Channel MOSFET Triode ● For high-frequency stages up to 300 MHz, preferably in FM applications ● High overload capability BF 987 Type Marking Ordering Code BF 987 – Q62702-F35 Pin Configuration 1 2 3 D S Package1) TO-92 G Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 20 V Drain current ID 30 mA Gate-source peak current ± 10 Total power dissipation, TA ≤ 45 ˚C Ptot 300 Storage temperature range Tstg – 55 … + 150 ˚C Channel temperature Tch 150 Rth JA ≤ IGSM mW Thermal Resistance Junction - ambient 1) For detailed information see chapter Package Outlines. 350 K/W BF 987 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source breakdown voltage ID = 10 µA, – VGS = 4 V V(BR) DS 20 – – V Gate-source breakdown voltage ± IGS = 10 mA, VDS = 0 ± V(BR) GSS 6.5 – 12 Gate-source leakage current ± VGS = 5 V, VDS = 0 ± IGSS – – 50 nA Drain current VDS = 10 V, VGS = 0 IDSS 5 – 18 mA Gate-source pinch-off voltage VDS = 10 V, ID = 20 µA – VGS (p) – – 2.5 V Forward transconductance VDS = 10 V, ID = 10 mA, f = 1 kHz gfs 14 16 – mS Gate input capacitance VDS = 10 V, ID = 10 mA, f = 1 MHz Cgss – 2.7 – pF Reverse transfer capacitance VDS = 10 V, ID = 10 mA, f = 1 MHz Cdg – 35 – fF Output capacitance VDS = 10 V, ID = 10 mA, f = 1 MHz Cdss – 1 – pF Power gain (test circuit) VDS = 10 V, ID = 10 mA , f = 200 MHz, GG = 2 mS, GL = 0.5 mS Gp – 25 – dB Noise figure (test circuit) VDS = 10 V, ID = 10 mA , f = 200 MHz, GG = 2 mS, GL = 0.5 mS F – 1 – AC Characteristics BF 987 Total power dissipation Ptot = f (TA) Output characteristics ID = f (VDS) Gate transconductance gfs = f (VGS) VDS = 10 V, IDSS = 10 mA, f = 1 kHz Drain current ID = f (VGS) VDS = 10 V BF 987 Gate input capacitance C gss = f (VGS) VDS = 10 V, IDSS = 10 mA, f = 1 MHz Output capacitance Cdss = f (VDS) VGS = 0, IDSS = 10 mA, f = 1 MHz Reverse transfer capacitance Cdg = f (VDS) IDSS = 10 mA, f = 1 MHz, VGS = 0 Gate input admittance y11s VDS = 10 V, IDSS = 10 mA, VG = 0 (common source) BF 987 Gate forward transfer admittance y21s VDS = 10 V, VG = 0, IDSS = 10 mA (common source) Test circuit for power gain and noise figure f = 200 MHz Output admittance y22s VDS = 10 V, IDSS = 10 mA, VG = 0 (common source)