PTMA210404FL Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 40 W, 1800 – 2200 MHz Description The PTMA210404FL integrates two wideband, 20-watt, 2-stage LDMOS integrated amplifiers into an open-cavity, ceramic package. It is designed for use in cellular amplifier applications in the 18002200 MHz frequency band. Manufactured with Infineon's advanced LDMOS process, this amplifier offers excellent thermal performance and superior reliability. PTMA210404FL Package H-34248-12 Features Broadband Performance of Each Side • Designed for wide RF and modulation bandwidths and low memory effects • Typical channel isolation = 26 dB • Typical single channel performance CW, 2018 MHz, 28 V - Output power at P-1dB = 20 W - Linear Gain = 30.5 dB - Efficiency = 54% • Typical Doherty performance with six-carrier TD-SCDMA signal, VDD = 28 V, IDQ1A = IDQ1B = 55 mA, IDQ2B = 110 mA, VG2A = 1.06 V, ƒ = 2018 MHz VDD = 28 V, IDQ1 = 60 mA, IDQ2 = 120 mA 35 0 -5 25 -10 20 -15 15 10 Return Loss Side A Side B 5 1800 -20 Return Loss (dB) Gain (dB) Gain 30 - Average output power = 10 W - Linear Gain = 27 dB - Efficiency = 35% - ACLR1 = –33 dBc - ACLR2 = –34 dBc -25 1900 2000 2100 -30 2200 • Capable of handling 10:1 VSWR @ 28 V, 50 W (CW) output power • Integrated ESD protection. Meets HBM Class 1B (minimum), per JESD22-A114F • High-performance, thermally-enhanced package, Pb-free and RoHS compliant, with low-gold plating Frequency (MHz) RF Characteristics Six-carrier TD-SCDMA Measurements in Doherty Circuit (tested in Infineon test fixture) VDD = 28 V, IDQ1A = IDQ1B = 55 mA, IDQ2B = 110 mA, VGS2A = 1.05 V, POUT = 10 W average, ƒ = 2018 MHz, input PAR = 9.8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 26 27 — dB Drain Efficiency ηD 33 35 — % Adjacent Channel Power Ratio ACPR — –33 –30 dBc Alternate Channel Power Ratio Alt — –34 –31 dBc All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 13 Rev. 04, 2009-06-16 PTMA210404FL Confidential, Limited Internal Distribution RF Characteristics (cont.) CW Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ1A = IDQ1B = 55 mA, IDQ2B = 110 mA, VGS2A = 1.05 V, ƒ = 2018 MHz Characteristic Conditions Symbol Min Typ Max Unit Gain Flatness 1 W / 15 MHz ∆G — 0.30 — dB Gain Compression 40 W — — –0.4 –1.0 dB DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA VDS = 63 V, V GS = 0 V IDSS — — 10.0 µA RDS(on)1 — 3.6 — Ω RDS(on)2 — 0.6 — Ω VGS 2.0 2.4 3.0 V IGSS — — 1.0 µA Final Stage On-state Resistance Operating Gate Voltage VGS = 10 V, V DS = 0.1 V VDS = 28 V, IDQ1 = 50 mA, IDQ2 = 120 mA Gate Leakage Current VGS = 10 V, V DS = 0 V Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Input Power for CW - each side PIN < 20 dBm PD 29 W 0.167 W/°C 110 W 0.625 W/°C TSTG –40 to +150 °C Stage 1 RθJC 6.0 °C/W Stage 2 RθJC 1.6 °C/W Total Device Dissipation Stage 1 Above 25°C derate by Stage 2 PD Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C) *See Infineon distributor for future availability. Data Sheet 2 of 13 Rev. 04, 2009-06-16 PTMA210404FL Confidential, Limited Internal Distribution Ordering Information Type and Version Package Outline Flange Type Shipping Marking PTMA210404FL V1 H-34248-12 Earless flange Tray PTMA210404FL PTMA210404FL V1 R250 H-34248-12 Earless flange Tape & Reel 250 pcs PTMA210404FL Typical Performance (data taken in a production test fixture) Six-carrier TD-SCDMA Drive-up CW Performance of Each Side Single Side: VDD = 28 V, IDQ1 = 60 mA, IDQ2 = 120 mA, ƒ = 2017.5 MHz VDD = 28 V, IDQ1 = 60 mA, IDQ2 = 120 mA -30 32 30 31 25 29 30 -40 15 28 10 27 34 35 36 37 Efficiency 30 38 32 34 2010 MHz 2018 MHz 2025 MHz 36 38 40 42 20 10 44 Output Power (dBm) Output Power (dBm) Data Sheet 50 40 20 33 Gain 30 -35 -45 60 Power Added Efficiency (%) ACPR (dBc) -25 35 Gain (dB) Adj Low er Adj Upper Alt Low er Alt Upper Efficiency Efficiency (%) -20 3 of 13 Rev. 04, 2009-06-16 PTMA210404FL Confidential, Limited Internal Distribution Typical Performance (cont.) Two-tone Performance at Various I DQ1 Two-tone Performance at Various I DQ2 Single Side, ƒ = 2018 MHz VDD = 28 V, IDQ1 = Varying, IDQ2 = 120 mA Single Side, ƒ = 2018 MHz VDD = 28 V, IDQ1 = 60 mA, IDQ2 = Varying -30 55mA -34 60mA -36 65mA -38 70mA -40 -42 -44 -40 -45 100mA 110mA -50 120mA -55 130mA 140mA -60 30 31 32 33 34 35 36 37 38 39 40 30 31 32 33 34 35 36 37 38 39 40 Average Output Power (dBm) Average Output Power (dBm) CW Sweep at P-1dB Two-carrier WCDMA Performance VDD1 = VDD2 = 28V, IDQ1 = 50 mA, IDQ2 = 120 mA VDD1 = VDD2 = 28 V, IDQ1 = 60 mA, IDQ2 = 260 mA 10 MHz Spacing, 8 dB PAR, ƒ = 2140 MHz 60 50 Gain 30 40 29 30 Efficiency 28 20 2110 MHz 2140 MHz 2170 MHz 27 26 40 -20 3rd Order IMD 31 -15 Drain Efficiency (%) 32 Gain (dB) -35 Efficiency 30 -25 25 -30 -35 IM3L 20 IM3U 15 -40 10 -45 0 -50 ACPR 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Output Power (dBm) Average Output Power (dBm) 4 of 13 10 5 30 31 32 33 34 35 36 37 38 39 40 41 42 43 Data Sheet 35 Drain Efficiency (%) 50mA -32 3rd Order Intermodulation Distortion (dBc) 3rd Order Intermodulation Distortion (dBc) -30 Rev. 04, 2009-06-16 PTMA210404FL Confidential, Limited Internal Distribution Typical Performance (cont.) CW Performance Broadband Performance Doherty Circuit, Carrier: VDD = 28 V, IDQ1 = 55 mA, IDQ2 = 120 mA Doherty Circuit Carrier: VDD = 28 V, IDQ1 = 55 mA, IDQ2 = 120 mA Peaking: VDD = 28 V, IDQ1 = 55 mA, VGS2 = 1.07 V Gain (dB) -10 25 -15 20 -20 Return Loss 15 -25 10 1900 2000 40 30 26 2010 MHz 2018 MHz 2025 MHz 20 10 24 -35 2200 2100 50 Gain 27 25 -30 5 1800 Efficiency 28 Gain (dB) Gain 30 60 29 -5 Input Return Loss (dB) 35 Power Added Efficiency (%) Peak: VDD = 28 V, IDQ1 = 55 mA, VGS2 = 1.07 V 32 34 36 Frequency (MHz) 38 40 42 44 46 48 Output Power (dBm) Power Gain vs Frequency CW at Various Drain Voltage Doherty Circuit, CW, 40W Carrier: VDD = 28 V, IDQ1 = 60 mA, IDQ2 = 120 mA Doherty Circuit, ƒ = 2018 MHz Peaking: VDD = 28V, IDQ1 = 60 mA, VGS2 = 1.07 V 26 45 25 24 40 Efficiency 35 23 22 1800 30 1850 1900 1950 2000 2050 28 50 Gain 27 40 26 30 24 V 28 V 32 V 25 20 24 25 2100 10 32 Frequency (MHz) Data Sheet 60 Efficiency Gain (dB) 50 Gain 29 Power Added Efficiency (%) Gain (dB) 27 55 Power Added Efficiency (%) 28 34 36 38 40 42 44 46 48 Output Power (dBm) 5 of 13 Rev. 04, 2009-06-16 PTMA210404FL Confidential, Limited Internal Distribution Typical Performance (cont.) CW at Various Temperatures Gate – Source Voltage vs. Temperature Doherty Circuit, Carrier: VDD = 28 V, IDQ1 = 60 mA, IDQ2 = 120 mA VDD = 28 V, IDQ1 = 60 mA, IDQ2 = 120 mA Peaking: VDD = 28 V, IDQ1 = 60 mA, VGS2 = 1.07 V 50 40 28 Gain 26 30 20 24 Gate – Source Voltage (V) Gain (dB) 30 2.70 60 Efficiency -25oC 25oC 90oC Power Added Efficiency (%) 32 32 34 36 38 40 42 44 46 IDQ2 2.50 Slope = –1.168 mV/°C 2.40 2.30 IDQ1 48 Slope = –1.435 mV/°C 2.20 2.10 -30 10 22 2.60 -10 10 30 50 70 90 Temperature (°C) Output Power (dBm) Broadband Circuit Impedance Z Source Ω Frequency Z Load Ω R jX R jX 2000 74.7 25.2 4.2 -2.2 2010 75.6 24.9 4.2 -2.1 2020 76.5 24.5 4.2 -2.0 2030 77.4 24.1 4.2 -1.9 2040 78.3 23.7 4.1 -1.9 D Z Source Z Load G S Z0 = 50 Ω 0 .1 2000 MHz 2040 MHz 2040 MHz Data Sheet 0.5 0.4 0.3 0.2 0.1 0.0 Z Source ARD LOA D HS T O W E NGT - W AV E LE NGT H S T OW A R MHz Z Load 2000 MHz 0.1 6 of 13 Rev. 04, 2009-06-16 PTMA210404FL Confidential, Limited Internal Distribution Reference Circuit VDD 1 C1 10µF C2 10µF C3 1µF C4 . 1µF C5 12pF C6 10µF C7 1µF C8 .1µF C9 12pF C10 10µF C11 1µF C12 .1µF C13 12pF VG1 R5 Q3 VG2 VDD2 C33 100µF R4 C29 12pF C30 .1µF C31 1µF C32 10µF l14 R1 50KV C14 0.9pF l13 l12 C39 2.4pF 3 4 5 C40 0. 9pF C41 12pF 1 l 15 l16 l17 l 18 l19 2 l4 l5 l6 l7 l8 C43 1.1pF C44 0.7pF l 20 6 7 8 9 J1 l1 l2 10 11 C28 0.9pF l10 C45 12pF 12 l3 C42 2.4pF l9 l 11 J2 C46 0. 7pF VG1 R3 C24 10µF C25 1µF C26 .1µF C27 12pF C20 10µF C21 1µF C22 .1µF C23 12pF C15 10µF C16 10µF C17 1µF C18 . 1µF C34 12pF C36 1µF C37 10µF VDD2 C38 100µF d_ 6- 1 2- 09 Q1 C35 .1µF 2 10 4 04 ef l _ b VG2 a R2 Q2 VDD 1 C19 12pF Reference circuit block diagram for ƒ = 2017.5 MHz Data Sheet 7 of 13 Rev. 04, 2009-06-16 PTMA210404FL Confidential, Limited Internal Distribution Reference Circuit (cont.) Circuit Assembly Information DUT PCB Microstrip l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 l11 l12 l13 l14 l15 l16 l17 l18 l19 l20 Data Sheet PTMA210404FL 0.76 mm [.030"] thick, εr = 3.48 Electrical Characteristics at 2017.5 MHz 0.285 0.302 0.311 0.031 0.056 0.051 0.043 0.071 0.239 0.289 0.086 0.285 0.302 0.311 0.031 0.056 0.051 0.043 0.071 0.140 λ, 51.0 λ, 51.0 λ, 67.0 λ, 17.2 λ, 17.2 λ, 19.5 λ, 28.0 λ, 51.0 λ, 51.0 λ, 33.0 λ, 51.0 λ, 51.0 λ, 51.0 λ, 67.0 λ, 17.2 λ, 17.2 λ, 19.5 λ, 28.0 λ, 51.0 λ, 51.0 LDMOS IC Rogers RO4350 Dimensions: L x W (mm) Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω 25.68 x 1.63 27.23 x 1.63 28.58 x 1.02 2.59 x 7.24 4.75 x 7.24 4.29 x 6.22 3.71 x 3.94 6.43 x 1.63 21.54 x 1.63 24.54 x 3.15 7.75 x 1.63 25.68 x 1.63 27.23 x 1.63 28.58 x 1.02 2.59 x 7.24 4.75 x 7.24 4.29 x 6.22 3.71 x 3.94 6.43 x 1.63 12.65 x 1.63 8 of 13 1 oz. copper Dimensions: L x W (in.) 1.011 1.072 1.125 0.102 0.187 0.169 0.146 0.253 0.848 0.966 0.305 1.011 1.072 1.125 0.102 0.187 0.169 0.146 0.253 0.498 x x x x x x x x x x x x x x x x x x x x 0.064 0.064 0.040 0.285 0.285 0.245 0.155 0.064 0.064 0.124 0.064 0.064 0.064 0.040 0.285 0.285 0.245 0.155 0.064 0.064 Rev. 04, 2009-06-16 PTMA210404FL Confidential, Limited Internal Distribution Reference Circuit (cont.) C31 C1 C14 C3 C6 2A1306-3 0324 X Inger C8 C9 Q3 C39 C40 C46 C13 C12 C19 C18 R4 C10 C11 C33 C30 C32 C7 VG2 R1 ANAREN VG2 C29 R5 VG1 RF_IN VDD C2 C4 C5 V DD V DD C41 C42 C43 C16 C28 C25 C26 RF_OUT C44 C27 C15 C45 C23 C22 C21 C17 C20 C34 C35 C24 C37 V DD R3 R2 Q2 VG1 Q1 C38 C36 VG2 a 2 1 0 4 0 4 e f l _ CD - a s s y 6 - 1 0 - 0 9 Reference circuit assembly diagram (not to scale)* Component Description Suggested Manufacturer P/N or Comment C1, C15 C2, C6, C10, C15, C20, C24, C32, C37 C3, C7, C11, C17, C21, C25, C31, C36 C4, C8, C12, C18, C22, C26, C30, C35 C5, C9, C13, C19, C23, C27, C29, C34, C41, C45 C14, C28, C40 C33, C38 C39, C42 C43 C44, C46 Q1, Q2, Q3 R1 R2, R3, R4, R5 Tantalum Capacitor, 10 µF, 35 V Ceramic Capacitor, 10 µF Digi-Key Digi-Key 399-1655-2-ND 490-1891-2-ND Ceramic Capacitor, 1 µF Digi-Key 445-1411-2-ND Capacitor, 0.1 µF Digi-Key 399-1267-2-ND Ceramic Capacitor, 12 pF ATC 600S120JT Ceramic Capacitor, 0.9 pF Electrolitic Capacitor, 100 µF, 35 V Ceramic Capacitor, 2.4 pF Ceramic Capacitor, 1.1 pF Ceramic Capacitor, 0.7 pF Transistor Chip Resistor, 50 ohms Potentiometer, 2 k-ohms ATC Digi-Key ATC ATC ATC Infineon Technologies Digi-Key Digi-Key 600S0R9BT PCE3373TR-ND 600S2R4BT 600S1R1BT 600S0R7BT BCP56 RFP100200-4Y502 3224W-202ETR-ND *Gerber Files for this circuit available on request Data Sheet 9 of 13 Rev. 04, 2009-06-16 PTMA210404FL Confidential, Limited Internal Distribution Application Examples Single - ended In Doherty Out In 90º In Out Quadrature Combined Out Push-pull In In Out Out Data Sheet 10 of 13 Rev. 04, 2009-06-16 PTMA210404FL Confidential, Limited Internal Distribution Package Specifications Package H-34248-12 Outline 8.223 [.324] 2X 5.710 [.225] 4.112 [.162] R0.51+.381 -.127 R.020+.015 -.005 [ 2X (45° X 2.03 [.08]) CL 2.728±0.510 [.107±.020] 1 2 9.771 [.385] FLANGE CL 3 4 5 6 7 2X 1.269 [.050] 2X 4.213 [.166] 2X 7.157 [.282] ] FLANGE 9.398 [.370] LID 15.227±0.510 [.600±.020] 8 9 10 11 12 8X 0.406 [.016] 2X 2.538 [.100] 2X 0.762 [.030] 2X 5.888 [.232] 14.720 [.580] REF SPH 1.575 [.062] 19.812±0.200 [.780±.008] 1.016 [.040] 3.632±0.380 [.143±.015] C66065-A0003-C728-01-0027 H-34248-12-1.dwg 6-12-09 CL 0.038 [.0015] -A- SOURCE 20.583 [.810] Diagram Notes—unless otherwise specified: Data Sheet 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 7. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Lead thickness: 0.102 +0.051/–0.025 [.004 +.002/–.001]. 5. Gold plating thickness: 0.254 micron [10 microinch] max. 11 of 13 Rev. 04, 2009-06-16 PTMA210404FL Confidential, Limited Internal Distribution Package Specifications (cont.) Package H-34248-12 Pinout Top View VD1A 3 NC 4 RFINA 5 VG1A 6 VG2A 7 VD1B 8 NC 9 RFINB 10 VG1B 11 VG2B 12 1 VD2A 2 VD2B a 2 1 0 4 0f l4_h - 3 4 2 4- 8 1 2 _P D _0 5- 2 2- 0 9 Source: Package Flange Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 12 of 13 Rev. 04, 2009-06-16 PTMA210404FL V1 Confidential, Limited Internal Distribution Revision History: 2009-06-16 2009-06-05, Preliminary Data Sheet Previous Version: Page Subjects (major changes since last revision) all 7, 8, 9 Remove Preliminary designation Add reference circuit information 11 Finalize package information Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2009-06-16 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 13 of 13 Rev. 04, 2009-06-16