PTMA210452EL V1

PTMA210452EL
PTMA210452FL
Confidential, Limited Internal Distribution
Wideband RF LDMOS Integrated Power Amplifier
45 W, 1900 – 2200 MHz
PTMA210452EL
Package H-33265-8
PTMA210452FL
Package H-34265-8
•
Designed for wide RF and modulation bandwidths and
low memory effects
Typical two-carrier WCDMA performance at 2140 MHz,
28 V
- Average output power = 3.2 W
- Linear Gain = 28 dB
- Efficiency = 10.5%
- IMD3 = –47 dBc
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Features
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The PTMA210452FL and PTMA210452FL are wideband,
45-watt, 2-stage, LDMOS integrated amplifiers intended for use
in all typical modulation formats from 1900 to 2200 MHz. These
devices are offered in thermally-enhanced ceramic packages
with solder-friendly plating for cool and reliable operation.
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Description
Typical two-tone performance, 2140 MHz, 28 V
- Output power (PEP) = 45 W at IM3 = –30 dBc
- Efficiency = 32%
•
Capable of handling 10:1 VSWR @ 28 V, 45 W (CW)
output power
•
Integrated ESD protection. Meets HBM Class 1B (minimum), per JESD22-A114F
•
Thermally-enhanced packages, Pb-free and RoHS compliant, with solder-friendly plating
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RF Characteristics
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Two-carrier WCDMA Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ1 = 200 mA (tuned for linearity), IDQ2 = 450 mA (tuned for linearity & efficiency), POUT = 3.2 W average,
ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol
Min
Typ
Max
Unit
Input Return Loss
IRL
—
–16
–10
dB
Gain
Gps
26.5
28
—
dB
Drain Efficiency
ηD
9
10.5
—
%
Intermodulation Distortion, 2-channel WCDMA
IMD
–43
–47
—
dBc
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 08, 2015-01-14
PTMA210452EL
PTMA210452FL
Confidential, Limited Internal Distribution
RF Characteristics
Small-signal CW Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
Conditions
Symbol
Gain Flatness
1 W / 30 MHz
ΔG
—
—
td
Group Delay
ƒ = 2140 MHz
DC Characteristics
Conditions
Symbol
Drain Leakage Current
VDS = 28 V, VGS = 0 V
VDS = 63 V, VGS = 0 V
VGS = 10 V, VDS = 0 V
On-state Resistance
Stage 1
VGS = 10 V, VDS = 0.1 V
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Gate Leakage Current
Unit
0.10
0.5
dB
–1
+0.6
+1
º/60 MHz
—
—
ns
Typ
2.16
Min
Typ
Max
Unit
IDSS
—
—
1.0
µA
IDSS
—
—
10.0
µA
IGSS
—
—
1.0
µA
RDS(on)
—
1.1
—
Ω
VGS
2.0
2.5
3.0
V
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Stage 1 Characteristics
Min
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Characteristic
Phase Linearity
Max
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VDD = 28 V, IDQ1 = 200 mA, IDQ2 = 450 mA, POUT = 1 W, ƒ = 2140 MHz
VDS = 28 V, IDQ1 = 200 mA,
Stage 2 Characteristics
Conditions
Symbol
Min
Typ
Max
Unit
VGS = 0 V, IDS = 10 mA
V(BR)DSS
65
—
—
V
VDS = 28 V, VGS = 0 V
IDSS
—
—
1.0
µA
VDS = 63 V, VGS = 0 V
IDSS
—
—
10.0
µA
VGS = 10 V, VDS = 0 V
IGSS
—
—
1.0
µA
RDS(on)
—
0.16
—
Ω
VGS
2.0
2.5
3.0
V
Drain Leakage Current
Gate Leakage Current
On-state Resistance
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Drain-source Breakdown Voltage
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Operating Gate Voltage
Data Sheet
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Operating Gate Voltage
Stage 2
VGS = 10 V, VDS = 0.1 V
VDS = 28 V, IDQ2 = 450 mA
2 of 11
Rev. 08, 2015-01-14
PTMA210452EL
PTMA210452FL
Confidential, Limited Internal Distribution
Maximum Ratings
Parameter
Symbol
Value
Unit
VDSS
65
V
Gate-Source Voltage
VGS
–0.5 to +12
V
Junction Temperature
TJ
200
°C
Input Power
PIN
25
dBm
Storage Temperature Range
TSTG
–40 to +150
Thermal Resistance (TCASE = 70°C) Stage 1
RθJC
Stage 2
RθJC
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Drain-Source Voltage
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Ordering Information
°C
3.5
°C/W
1.3
°C/W
Package Outline
Package Description
Shipping
PTMA210452EL V1
H-33265-8
Thermally-enhanced slotted flange
Tray
PTMA210452EL V1 R250
H-33265-8
Thermally-enhanced slotted flange
Tape & Reel
PTMA210452FL V1
H-34265-8
Thermally-enhanced earless flange
PTMA210452FL V1 R250
H-34265-8
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Type and Version
Tape & Reel
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Thermally-enhanced earless flange
Tray
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Typical Performance (data taken in a production test fixture)
*See Infineon distributor for future availability.
Data Sheet
3 of 11
Rev. 08, 2015-01-14
PTMA210452EL
PTMA210452FL
Confidential, Limited Internal Distribution
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Typical Performance (cont.)
Data Sheet
4 of 11
Rev. 08, 2015-01-14
PTMA210452EL
PTMA210452FL
Confidential, Limited Internal Distribution
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Typical Performance (cont.)
Broadband Circuit Impedance
Z Source Ω
5
4
MHz
R
jX
R
jX
1900
25.2
20.4
8.8
12.2
2110
26.1
27.8
6.1
16.5
2140
26.2
28.9
5.9
17.1
2170
26.5
30.3
5.6
17.8
2200
26.6
31.6
5.2
18.6
Z0 = 50 Ω
0.
45
0.
0
Z Load Ω
0.
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Frequency
Z Load
2200 MHz
Z Source
0.
3
RAT
O
1900 MHz
1900 MHz
A RD
GE N
E
0. 2
R -->
2200 MHz
Data Sheet
5 of 11
Rev. 08, 2015-01-14
PTMA210452EL
PTMA210452FL
Confidential, Limited Internal Distribution
Reference Circuit — for evaluation only
VD1
VD2
C2
10μF
C1
100μF
50V
C3
1μF
C4
0.1μF
C5
12pF
C19
12pF
C20
0.1μF
C21
1μF
C23
100μF
50V
C22
10μF
11
1
2
3
1
2
C29
1.1pF
C8
0.1μF
8
4
3
C30
1.8pF
C9
12pF
5
6
8
7
9
RF_OUT
C31
3pF
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C7
1μF
PTMA210452EL
PTMA210452FL
5
6
7
VG1
C6
10μF
4
C32
12pF
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RF_IN
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DUT
10
VG2
C10
10μF
C11
1μF
C12
0.1μF
C13
12pF
C24
12pF
C25
0.1μF
C26
1μF
C27
10μF
C28
100μF
50V
Circuit Assembly Information
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Reference circuit schematic for ƒ = 2140 MHz
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a 2 1 0 4 5 2 e f_
l b d _ 7 -3 1 -0 8
PTMA210452EL or PTMA210452FL
Test Fixture Part No.
LTN/PTMA210452
PCB
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DUT
Rogers RO4350
RF LDMOS Integrated Power Amplifier ICs
εr = 3.48, 0.76 mm [.030"] thick, 1 oz. copper
Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower
1
2
3
4
5
6
7
8
9
10, 11
Data Sheet
Electrical Characteristics at 2140 MHz
Dimensions: L x W (mm) Dimensions: L x W (in.)
0.129 λ, 49.7 Ω
11.00 x 1.70
0.433 x 0.067
0.114 λ, 49.7 Ω
9.68 x 1.70
0.381 x 0.067
0.040 λ, 10.4 Ω
3.10 x 13.00
0.122 x 0.512
0.013 λ, 10.4 Ω
1.02 x 13.00
0.039 x 0.512
0.024 λ, 34.1 Ω
2.01 x 3.00
0.079 x 0.118
0.066 λ, 34.1 Ω
5.46 x 3.00
0.215 x 0.118
0.162 λ, 43.4 Ω
13.67 x 2.11
0.538 x 0.083
0.004 λ, 49.7 Ω
0.38 x 1.70
0.015 x 0.067
0.050 λ, 49.7 Ω
4.24 x 1.70
0.167 x 0.067
0.128 λ, 61.2 Ω
11.00 x 1.19
0.433 x 0.047
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Microstrip
6 of 11
Rev. 08, 2015-01-14
PTMA210452EL
PTMA210452FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
VD 1
V D2
C1
C23
RF_IN
C29
C9
C8
C11
C30
C5
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C3
C4
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C21
C20
C19
C2
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C22
RF_OUT
C32
C13
C12
C31
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C7
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C6
C10
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VG1
V G2
C24
C25 C26
C27
C28
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VD 2
a 2 1 0 4 5 2 e f _
l c d _ 4 - 3 0 - 0 8
Reference circuit assembly diagram (not to scale)
Component
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Circuit Assembly Table
Description
Suggested
Supplier
P/N or Comment
C1, C23, C28
Electrolytic capacitor 100 µF, 50 V
Digi-Key
PCE3718CT-ND
C2, C6, C10, C22, C27
Ceramic capacitor 10 µF
Murata
GRM422Y5V106Z050AL
C3, C7, C11, C21, C26
Ceramic capacitor 1 µF
Digi-Key
445-1411-2-ND
C4, C8, C12, C20, C25
Capacitor, 0.1 µF
Digi-Key
399-1267-2-ND
C5, C9, C13, C19, C24, C32 Ceramic capacitor 12 pF
ATC
600S120JT
C29
ATC
600S1R1BT
Ceramic capacitor 1.1 pF
C30
Ceramic capacitor 1.8 pF
ATC
600S1R8BT
C31
Ceramic capacitor 3 pF
ATC
600S3R0BT
Not used
C14, C15, C16, C17, C18
Data Sheet
7 of 11
Rev. 08, 2015-01-14
PTMA210452EL
PTMA210452FL
Confidential, Limited Internal Distribution
Package Specifications
Package H-33265-8 Outline
[.600]
7. 11
[.280]
(45° X 2.03 [.08])
4X R 0.13 [.05] MAX
C
L
2. 54±0. 51
[.100±.020]
10.16
[. 400]
5 6 7
CL
tin
2X R1.59
[R.063]
4X R1.52
[R.060]
10. 16
[.400]
ue
9. 55
[. 376]
REF
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2X 3.48
2X 2.21 [.137]
[. 087]
1. 02
[. 040]
S
H -33265 8
- _po _12- 13-2011 _old inf o
20.32
[.800]
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15.24±0.51
[.600±.020]
6X 0.406
[.016]
0. 76
[. 030]
SPH 1. 57
[.062]
9.78
[.385]
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4
4X R 0.63 [.025] MAX
3.68±. 38
[.145±.015]
(2.73
[.107])
CL
1 2 3
2X 4. 57
[. 180]
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6.
C
L
CL
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Pins: see page 10 for complete list and pinout diagram.
3. Lead thickness: 0.127 ± 0.025 [0.005 ± 0.001].
4. Gold plating less than 0.25 micron [10 microinch].
5. All tolerances ± 0.127 [0.005] unless specified otherwise.
6. Exposed metal plane on bottom of ceramic insulator.
7. Primary dimensions are inches, alternate dimensions are mm.
Data Sheet
8 of 11
Rev. 08, 2015-01-14
PTMA210452EL
PTMA210452FL
Confidential, Limited Internal Distribution
Package Specifications (cont.)
Package H-34265-8 Outline
(45° X 2.03 [.08])
7. 11
[.280]
C
L
2.54±0. 51
4X R 0.13 [.05] MAX
8
10.16
[. 400]
1 2 3
4
4X R 0.63 [.025] MAX
5 6 7
6X 0.406
0. 76 [. 016]
[. 030]
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2X 4.57
[.180]
2X 3. 48
2X 2.21 [.137]
[. 087] 9.55
[.376]
REF
15.24±0.51
[. 600±.020]
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CL
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[.100±.020]
10.16
[.400]
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SPH 1.57
[.062]
3.68±.38
[.145±. 015]
1.02
[.040]
H- 34265- 8_po_12- 13- 2011_ood inf o
CL
10.16
[. 400]
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Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Pins: see page 10 for complete list and pinout diagram.
3. Lead thickness: 0.127 ± 0.025 [0.005 ± 0.001].
4. Gold plating less than 0.25 micron [10 microinch].
5. All tolerances ± 0.127 [0.005] unless specified otherwise.
6. Primary dimensions are inches, alternate dimensions are mm.
Data Sheet
9 of 11
Rev. 08, 2015-01-14
PTMA210452EL
PTMA210452FL
Confidential, Limited Internal Distribution
Package Specifications (cont.)
Package H-3X265-8 Pinout
1
8
VD1
2
VG1 thermal FET
3
VG1
4
RF In
5
VG1
6
5
7
6
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4
Source
1
8
7
VG2
VG2 thermal FET
RF Out
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a210452 ef l P D pi nout 2008 10 07
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3
Function
S (Flange)
s
Pin #
2
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Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
10 of 11
Rev. 08, 2015-01-14
PTMA210452EL V1 / PTMA210452FL V1
Confidential, Limited Internal Distribution
Revision History: 2015-01-14
Data Sheet
Previous Version: 2011-11-10, Data Sheet
Page
Subjects (major changes since last revision)
Products discontinued. Please see PD Notes: PD_215_14.
We Listen to Your Comments
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Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
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All
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[email protected]
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Edition 2015-01-14
Published by
Infineon Technologies AG
81726 Munich, Germany
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To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
© 2007 Infineon Technologies AG
All Rights Reserved.
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Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
11 of 11
Rev. 08, 2015-01-14