BLM6G22-30; BLM6G22-30G W-CDMA 2100 MHz to 2200 MHz power MMIC Rev. 03 — 21 November 2008 Preliminary data sheet 1. Product profile 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead (SOT834-1). Table 1. Typical performance Typical RF performance at Th = 25 °C. Mode of operation 2-carrier W-CDMA [1] f VDS PL(AV) Gp ηD IMD3 ACPR (MHz) (V) (W) (dB) (%) (dBc) (dBc) 9 −48[1] −50[1] 2110 to 2170 28 2 29.5 Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Typical 2-carrier W-CDMA performance at a frequency of 2110 MHz: u Average output power = 2 W u Power gain = 30 dB (typ) u Efficiency = 9 % u IMD3 = −48 dBc u ACPR = −50 dBc n Integrated temperature compensated bias n Excellent thermal stability n Biasing of individual stages is externally accessible n Integrated ESD protection n Small component size, very suitable for PA size reduction n On-chip matching (input matched to 50 Ohm, output partially matched) n High power gain n Designed for broadband operation (2100 MHz to 2200 MHz) n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) BLM6G22-30; BLM6G22-30G NXP Semiconductors W-CDMA 2100 MHz to 2200 MHz power MMIC 2. Pinning information 2.1 Pinning BLM6G22-30 BLM6G22-30G GND 1 VDS1 2 n.c. 3 n.c. 4 n.c. 5 RF_INPUT 6 n.c. 7 n.c. 8 VGS1 9 16 GND 15 n.c. 14 RF_OUTPUT/VDS2 13 n.c. VGS2 10 GND 11 12 GND 001aae321 Transparent top view. Fig 1. Pin configuration 2.2 Pin description Table 2. Pin description Symbol Pin Description GND 1, 11, 12, 16 ground VDS1 2 first stage drain-source voltage n.c. 3, 4, 5, 7, 8, 13, 15 not connected RF_INPUT 6 RF input VGS1 9 first stage gate-source voltage VGS2 10 second stage gate-source voltage RF_OUT/VDS2 14 RF output or second stage drain-source voltage RF_GND flange RF ground 3. Ordering information Table 3. Ordering information Type number Package Name Description HSOP16F plastic, heatsink small outline package; 16 leads (flat) SOT834-1 BLM6G22-30G HSOP16 plastic, heatsink small outline package; 16 leads BLM6G22-30_BLM6G22-30G_3 Preliminary data sheet Version BLM6G22-30 SOT822-1 © NXP B.V. 2008. All rights reserved. Rev. 03 — 21 November 2008 2 of 12 BLM6G22-30; BLM6G22-30G NXP Semiconductors W-CDMA 2100 MHz to 2200 MHz power MMIC 4. Block diagram VDS1 RF_INPUT VGS1 VGS2 2 6 14 RF_OUTPUT/VDS2 9 10 TEMPERATURE COMPENSATED BIAS 001aah621 Fig 2. Block diagram of BLM6G22-30 and BLM6G22-30G 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 65 V VGS gate-source voltage 0.5 +13 V ID1 first stage drain current - 3 A ID2 second stage drain current - 9 A Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C 6. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Value Unit Rth(j-c)1 first stage thermal resistance from junction to case Tcase = 25 °C; PL = 2 W; 2-carrier W-CDMA [1] 3.9 K/W Rth(j-c)2 second stage thermal resistance Tcase = 25 °C; PL = 2 W; from junction to case 2-carrier W-CDMA [1] 2.1 K/W [1] Thermal resistance is determined under specific RF operating conditions. BLM6G22-30_BLM6G22-30G_3 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 21 November 2008 3 of 12 BLM6G22-30; BLM6G22-30G NXP Semiconductors W-CDMA 2100 MHz to 2200 MHz power MMIC 7. Characteristics Table 6. Characteristics Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz; f4 = 2167.5 MHz; VDS = 28 V; IDq1 = 270 mA; IDq2 = 280 mA; Th = 25 °C unless otherwise specified; in a production test circuit as described in Section 9 “Test information”. Symbol Parameter Conditions Min Gp power gain PL(AV) = 2 W RLin input return loss ηD IMD3 ACPR adjacent channel power ratio Typ Max Unit 27.5 30 32.5 dB PL(AV) = 2 W 10 - dB drain efficiency PL(AV) = 2 W 7.5 9 - % third order intermodulation distortion PL(AV) = 2 W - −48 −44.5 dBc PL(AV) = 2 W - −50 −47 dBc 14 8. Application information 8.1 Ruggedness The BLM6G22-30 and BLM6G22-30G are capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 28 V; IDq1 = 270 mA; IDq2 = 280 mA; PL = 2 W; 2-carrier W-CDMA. 8.2 Impedance information Table 7. Typical impedance f Zi[1] ZL[2] MHz Ω Ω 2075 40.9 + j22.8 18.0 − j5.5 2085 41.2 + j23.2 17.8 − j5.6 2095 41.6 + j23.3 17.7 − j5.7 2105 41.9 + j23.3 17.7 − j5.9 2115 42.1 + j23.3 17.6 − j6.0 2125 42.2 + j23.2 17.4 − j6.0 2135 42.4 + j23.1 17.3 − j6.1 2145 42.3 + j22.9 17.2 − j6.1 2155 42.5 + j22.8 17.0 − j6.2 2165 42.6 + j22.8 16.8 − j6.3 2175 42.7 + j22.8 16.6 − j6.4 2185 43.0 + j23.0 16.4 − j6.6 2195 43.6 + j23.1 16.3 − j6.9 2205 44.2 + j23.3 16.1 − j7.2 [1] Device input impedance as measured from gate to ground. [2] Test circuit impedance as measured from drain to ground. BLM6G22-30_BLM6G22-30G_3 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 21 November 2008 4 of 12 BLM6G22-30; BLM6G22-30G NXP Semiconductors W-CDMA 2100 MHz to 2200 MHz power MMIC 8.3 Performance curves Performance curves are measured in a BLM6G22-30G application circuit. 001aah622 35 15 ηD (%) Gp (dB) 13 33 IMD3, ACPR (dBc) IMD3 −47 Gp 31 001aah623 −45 11 ηD 9 29 −49 ACPR 7 27 25 2050 2100 2150 5 2250 2200 −51 2050 2100 2150 2200 f (MHz) Tcase = 25 °C; VDS = 28 V; PL(AV) = 2 W; IDq1 = 270 mA; IDq2 = 280 mA; carrier spacing = 10 MHz. Fig 3. 2-carrier W-CDMA power gain and drain efficiency as functions of frequency; typical values 001aah624 38 Gp (dB) 36 34 (2) 32 Gp 30 ηD Fig 4. 2-carrier W-CDMA adjacent power channel ratio and third order intermodulation distortion as functions of frequency; typical values 001aah625 IMD3, −20 ACPR (dBc) −25 IMD3 ACPR 25 −30 20 −35 15 −40 10 −45 5 −50 0 −55 10−1 Gp (3) 28 35 ηD (%) 30 Tcase = 25 °C; VDS = 28 V; PL(AV) = 2 W; IDq1 = 270 mA; IDq2 = 280 mA; carrier spacing = 10 MHz. Gp (1) 2250 f (MHz) (3) (1) (2) 26 (1), (2), (3) (2) (1) (3) 24 10−1 1 102 10 102 10 PL(AV) (W) VDS = 28 V; IDq1 = 270 mA; IDq2 = 280 mA; carrier spacing = 10 MHz. VDS = 28 V; IDq1 = 270 mA; IDq2 = 280 mA; carrier spacing = 10 MHz. (1) Tcase = −30 °C (1) Tcase = −30 °C (2) Tcase = 25 °C (2) Tcase = 25 °C (3) Tcase = 85 °C (3) Tcase = 85 °C Fig 5. 1 PL(AV) (W) 2-carrier W-CDMA power gain and drain efficiency as functions of average output power and temperature; typical values Fig 6. 2-carrier W-CDMA adjacent power channel ratio and third order intermodulation distortion as functions of average output power and temperature; typical values BLM6G22-30_BLM6G22-30G_3 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 21 November 2008 5 of 12 BLM6G22-30; BLM6G22-30G NXP Semiconductors W-CDMA 2100 MHz to 2200 MHz power MMIC 001aah626 32 Gp (dB) 30 001aah627 −20 IMD (dBc) −30 IMD3 −40 IMD5 −50 IMD7 28 (1) −60 (3) (2) −70 26 −80 −90 10−1 24 0 10 20 30 40 1 PL (W) 102 10 PL(PEP) (W) f = 2140 MHz; IDq1 = 270 mA; IDq2 = 280 mA. IDq1 = 270 mA; IDq2 = 280 mA; f1 = 2140 MHz; f2 = 2140.1 MHz. (1) VDS = 24 V (2) VDS = 28 V (3) VDS = 32 V Fig 7. One-tone CW power gain as function of output power and drain-source voltage; typical value Fig 8. Two-tone CW intermodulation distortion as function of peak envelope load power; typical value 001aah628 35 PL(M) (W) (1) 31 (2) (3) 27 23 19 15 2050 2100 2150 2200 2250 f (MHz) Test signal: IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 to 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. (1) Tcase = −30 °C (2) Tcase = 25 °C (3) Tcase = 85 °C Fig 9. Single-carrier peak output power as function of frequency and temperature; typical values BLM6G22-30_BLM6G22-30G_3 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 21 November 2008 6 of 12 BLM6G22-30; BLM6G22-30G NXP Semiconductors W-CDMA 2100 MHz to 2200 MHz power MMIC 9. Test information C11 C9 C15 C3 C4 C5 C1 C13 C14 C6 C7 R1 R2 C2 C8 C10 C12 001aah629 Striplines are on a double copper-clad Rogers 4350B Printed-Circuit Board (PCB) with εr = 3.5; thickness = 0.76 mm. See Table 8 for a list of components. Fig 10. Component layout for 2110 MHz to 2170 MHz circuit for 2-carrier W-CDMA Table 8. List of components For test circuit see Figure 10. Component C1, C13 Description Value multilayer ceramic chip capacitor 0.3 pF Remarks [1] C2, C4, C8, C11, C12 multilayer ceramic chip capacitor 4.7 µF; 50 V electrolytic capacitor C5, C9, C10, C14 multilayer ceramic chip capacitor 10 pF C6, C7 multilayer ceramic chip capacitor 100 nF R1 SMD resistor 0805 1 kΩ R2 SMD resistor 0805 3.9 kΩ [1] [1] American Technical Ceramics (ATC) type 100A or capacitor of same quality. BLM6G22-30_BLM6G22-30G_3 Preliminary data sheet 220 µF; 35 V C3, C15 © NXP B.V. 2008. All rights reserved. Rev. 03 — 21 November 2008 7 of 12 BLM6G22-30; BLM6G22-30G NXP Semiconductors W-CDMA 2100 MHz to 2200 MHz power MMIC 10. Package outline HSOP16F: plastic, heatsink small outline package; 16 leads (flat) SOT834-1 D A E E2 c y X HE v M A D1 e3 (2×) D2 w M bp2 16 12 A2 E1 pin 1 index Q1 detail X 1 11 w M Z bp1 (5×) e1 (2×) e (6×) e2 (4×) w M bp (10×) 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A2 mm 3.3 3.0 bp1 bp2 c D (1) D1 D2 E (1) E1 E2 e e1 e2 e3 HE Q1 v w y Z 0.43 1.09 0.28 0.94 5.87 5.72 0.32 0.23 16.0 15.8 13.0 12.6 1.1 0.9 11.1 10.9 6.2 5.8 2.9 2.5 1.02 1.37 5.69 3.81 16.2 15.8 1.7 1.5 0.25 0.25 0.1 2.5 2.0 bp Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-10-22 SOT834-1 Fig 11. Package outline SOT834-1 (HSOP16F) BLM6G22-30_BLM6G22-30G_3 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 21 November 2008 8 of 12 BLM6G22-30; BLM6G22-30G NXP Semiconductors W-CDMA 2100 MHz to 2200 MHz power MMIC HSOP16: plastic, heatsink small outline package; 16 leads SOT822-1 A E D E2 X c y HE v M A D1 e3 (2×) w D2 bp2 M 16 12 Q E1 A2 A pin 1 index A1 (A3) A4 θ Lp 1 detail X 11 w Z e (6×) e1 (2×) M bp1 (5×) e2 (4×) w M bp (10×) 0 5 10 mm scale HE Lp Q v w y Z θ 14.5 13.9 1.1 0.8 1.5 1.4 0.25 0.25 0.1 2.5 2.0 8° 0° DIMENSIONS (mm are the original dimensions) UNIT A max A1 A2 A3 A4 bp b p1 b p2 c D(1) D1 D2 E (1) E1 E2 e e1 e2 e3 mm 3.6 0.2 0 3.3 3.0 0.35 0.06 −0.06 0.43 0.28 1.09 0.94 5.87 5.72 0.32 0.23 16.0 15.8 13.0 12.6 1.1 0.9 11.1 10.9 6.2 5.8 2.9 2.5 1.02 1.37 5.69 3.81 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-07-23 07-02-08 SOT822-1 Fig 12. Package outline SOT822-1 (HSOP16) BLM6G22-30_BLM6G22-30G_3 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 21 November 2008 9 of 12 BLM6G22-30; BLM6G22-30G NXP Semiconductors W-CDMA 2100 MHz to 2200 MHz power MMIC 11. Handling information 11.1 ESD protection Table 9. ESD protection characteristics Test condition Class Human Body Model (HBM) 1 Machine Model (MM) 1 11.2 Moisture sensitivity Table 10. Moisture sensitivity level Test methodology Class JESD-22-A113 3 12. Abbreviations Table 11. Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel IS-95 Interim Standard 95 LDMOS Laterally Diffused Metal-Oxide Semiconductor MMIC Monolithic Microwave Integrated Circuit PA Power Amplifier PAR Peak-to-Average power Ratio PDPCH transmission Power of the Dedicated Physical CHannel RF Radio Frequency VSWR Voltage Standing-Wave Ratio W-CDMA Wideband Code Division Multiple Access 13. Revision history Table 12. Revision history Document ID Release date Data sheet status BLM6G22-30_BLM6G22-30G_3 20081121 Modifications: • Change notice Preliminary data sheet - Supersedes BLM6G22-30_BLM6G22-30G_2 Figure 5: updated BLM6G22-30_BLM6G22-30G_2 20080904 Preliminary data sheet - BLM6G22-30_BLM6G22-30G_1 BLM6G22-30_BLM6G22-30G_1 20080303 Objective data sheet - - BLM6G22-30_BLM6G22-30G_3 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 21 November 2008 10 of 12 BLM6G22-30; BLM6G22-30G NXP Semiconductors W-CDMA 2100 MHz to 2200 MHz power MMIC 14. Legal information 14.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 14.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 14.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 14.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 15. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLM6G22-30_BLM6G22-30G_3 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 03 — 21 November 2008 11 of 12 NXP Semiconductors BLM6G22-30; BLM6G22-30G W-CDMA 2100 MHz to 2200 MHz power MMIC 16. Contents 1 1.1 1.2 2 2.1 2.2 3 4 5 6 7 8 8.1 8.2 8.3 9 10 11 11.1 11.2 12 13 14 14.1 14.2 14.3 14.4 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 4 Ruggedness . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Impedance information . . . . . . . . . . . . . . . . . . . 4 Performance curves . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Handling information. . . . . . . . . . . . . . . . . . . . 10 ESD protection . . . . . . . . . . . . . . . . . . . . . . . . 10 Moisture sensitivity . . . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 21 November 2008 Document identifier: BLM6G22-30_BLM6G22-30G_3