IRF IRAM136

PD-97288 RevA
Integrated Power Hybrid IC for
Low Voltage Motor Applications
IRAM136-3063B
Series
30A, 600V
with Internal Shunt Resistor
Description
International Rectifier's IRAM136-3063B is a 30A, 600V Integrated Power Hybrid IC with Internal Shunt
Resistor for Appliance Motor Drives applications such air conditioning systems and compressor drivers as
well as for light industrial application. IR's technology offers an extremely compact, high performance AC
motor driver in a single isolated package to simplify design.
This advanced HIC is a combination of IR's low VCE(on) Punch-Through IGBT technology and the industry
benchmark 3-Phase high voltage, high speed driver in a fully isolated thermally enhanced package. A builtin temperature monitor and over-current and over-temperature protections, along with the short-circuit
rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and failsafe
operation. Using a new developed single in line package (SiP3) with heat spreader for the power die along
with full transfer mold structure minimizes PCB space and resolves isolation problems to heatsink.
Features
•
•
•
•
•
•
•
•
•
•
•
Integrated Gate Drivers
Temperature Monitor and Protection
Overcurrent shutdown
Low VCE(on) Advance Planar Super Rugged Technology
Undervoltage lockout for all channels
Matched propagation delay for all channels
5V Schmitt-triggered input logic
Cross-conduction prevention logic
Lower di/dt gate driver for better noise immunity
Motor Power up to 3.3kW / 85~253 Vdc
Fully Isolated Package, Isolation 2000VRMS min
Absolute Maximum Ratings
Parameter
Description
VCES / VRRM
IGBT/Diode Blocking Voltage
Value
600
V+
IO @ TC=25°C
Positive Bus Input Voltage
450
Maximum Output Current
30
IO @ TC=100°C
RMS Phase Current (Note 1)
15
Units
V
A
IO
Pulsed RMS Phase Current (Note 2)
50
FPWM
PWM Carrier Frequency
20
kHz
PD
Power dissipation per IGBT @ TC =25°C
73
W
VRMS
VISO
Isolation Voltage (1min)
2000
TJ (IGBT & Diode & IC)
Maximum Operating Junction Temperature
+150
TC
Operating Case Temperature Range
-20 to +100
TSTG
Storage Temperature Range
-40 to +125
T
Mounting torque Range (M4 screw)
0.7 to 1.17
°C
Nm
Note 1: Sinusoidal Modulation at V+=400V, TJ=150°C, FPWM=6kHz, Modulation Depth=0.8, PF=0.6, See Figure 3.
Note 2: tP<100ms; TC=25°C; FPWM=6kHz. Limited by IBUS-ITRIP, see Table "Inverter Section Electrical Characteristics"
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1
IRAM136-3063B
Internal Electrical Schematic – IRAM136-3063B
V+ (10)
RS
V- (12)
R1
VB1 (1)
U, VS1 (2)
C1
VB2 (4)
V, VS2 (5)
C2
VB3 (7)
W, VS3 (8)
C3
R3
R5
R2
22 21 20 19 18 17
VB2 HO2 VS2 VB3 HO3 VS3
23 VS1
LO1 16
24 HO1
R15
LO2 15
25 VB1
1 VCC
HIN1 (13)
HIN2 (14)
HIN3 (15)
2 HIN1
LIN1 (16)
5 LIN1
Driver IC
R4
LO3 14
R6
3 HIN2
4 HIN3
LIN2 LIN3 F ITRIP EN RCIN VSS COM
6
7
8
9
10
11
12 13
LIN2 (17)
LIN3 (18)
FAULT(19)
THERMISTOR
R9
ISENSE (20)
R8
POSISTOR
R11
VDD (21)
C7
C4
R7
R12
R13
R14
C5
C6
VSS (22)
2
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IRAM136-3063B
Absolute Maximum Ratings (Continued)
Symbol
Parameter
Min
Max
IBDF
Units Conditions
Bootstrap Diode Peak Forward
Current
---
4.5
A
tP= 10ms,
TJ = 150°C, TC=100°C
PBR Peak
Bootstrap Resistor Peak Power
(Single Pulse)
---
25.0
W
tP=100μs, TC =100°C
VS1,2,3
High side floating supply offset
voltage
VB1,2,3 - 25
VB1,2,3 +0.3
V
VB1,2,3
High side floating supply voltage
-0.3
600
V
VCC
Low Side and logic fixed supply
voltage
-0.3
20
V
VIN
Input voltage LIN, HIN, ITrip
-0.3
Lower of
(VSS+15V) or
VCC+0.3V
V
Inverter Section Electrical Characteristics @TJ= 25°C
Symbol
Parameter
Min
Typ
Max
V(BR)CES
Collector-to-Emitter Breakdown
Voltage
600
---
---
V
VIN=5V, IC=500μA
V(BR)CES / T
Temperature Coeff. Of
Breakdown Voltage
---
0.5
---
V/°C
VIN=5V, IC=1.0mA
(25°C - 150°C)
VCE(ON)
Collector-to-Emitter Saturation
Voltage
---
1.90
2.7
---
2.10
2.8
ICES
Zero Gate Voltage Collector
Current
---
5
150
---
80
---
VFM
Diode Forward Voltage Drop
---
1.6
2.5
---
1.5
2.2
VBDFM
Bootstrap Diode Forward Voltage
Drop
--
--
1.25
---
---
1.10
RBR
Bootstrap Resistor Value
---
22
---
TJ=25°C
RBR/RBR
Bootstrap Resistor Tolerance
---
---
±5
%
TJ=25°C
IBUS_TRIP
Current Protection Threshold
(positive going)
44
---
58
A
tON > 175μs
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Units Conditions
V
A
V
V
IC=15A, VCC=15V
IC=15A, VCC=15V, TJ=125°C
VIN=5V, V+=600V
VIN=5V, V+=600V, TJ=125°C
IC=15A
IC=15A, TJ=125°C
IF=1A
IF=1A, TJ=125°C
3
IRAM136-3063B
Inverter Section Switching Characteristics @ TJ= 25°C
Symbol
Parameter
Min
Typ
Max
EON
Turn-On Switching Loss
---
550
870
EOFF
Turn-Off Switching Loss
---
240
300
ETOT
Total Switching Loss
---
790
1170
EREC
Diode Reverse Recovery energy
---
65
125
tRR
Diode Reverse Recovery time
---
50
---
EON
Turn-On Switching Loss
---
830
1180
EOFF
Turn-off Switching Loss
---
400
550
ETOT
Total Switching Loss
---
1230
1730
EREC
Diode Reverse Recovery energy
---
120
205
tRR
Diode Reverse Recovery time
---
140
---
QG
Turn-On IGBT Gate Charge
RBSOA
Reverse Bias Safe Operating Area
---
72
108
Units Conditions
μJ
IC=15A, V+=400V
VCC=15V, L=2mH
Energy losses include "tail" and
diode reverse recovery
See CT1
ns
μJ
IC=15A, V+=400V
VCC=15V, L=2mH, TJ=125°C
Energy losses include "tail" and
diode reverse recovery
See CT1
ns
nC
+
IC=20A, V =400V, VGE=15V
TJ=150°C, IC=60A, VP=600V
V+= 480V
VCC=+15V to 0V
FULL SQUARE
See CT3
TJ=150°C, VP=600V,
SCSOA
Short Circuit Safe Operating Area
10
---
---
μs
V+= 500V,
VCC=+15V to 0V
See CT2
Recommended Operating Conditions Driver Function
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at
15V differential
Symbol
Definition
Min
Typ
Max
VB1,2,3
Units
High side floating supply voltage
VS+12
VS+15
VS+20
VS1,2,3
High side floating supply offset voltage
Note 4
---
400
VCC
Low side and logic fixed supply voltage
12
15
20
VT/ITRIP
T/ITRIP input voltage
VSS
---
VSS+5
VIN
Logic input voltage LIN, HIN
VSS
---
VSS+5
V
HIN
High side PWM pulse width
1
---
---
μs
Deadtime
External dead time between HIN and LIN
2
---
---
μs
V
V
Note 3: For more details, see IR21363 data sheet
Note 4: Logic operational for Vs from COM-5V to COM+600V. Logic state held for Vs from COM-5V to COM-VBS.
(please refer to DT97-3 for more details)
4
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IRAM136-3063B
Static Electrical Characteristics Driver Function
VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to COM/ITRIP and are
applicable to all six channels. (Note 3)
Symbol
Definition
Min
Typ
Max
Units
3.0
---
---
V
VIH
Logic "0" input voltage
VIL
Logic "1" input voltage
---
---
0.8
V
VCCUV+, VBSUV+
VCC and VBS supply undervoltage positive going threshold
10.6
11.1
11.6
V
VCCUV-, VBSUV-
VCC and VBS supply undervoltage negative going threshold
10.4
10.9
11.4
V
VCCUVH, VBSUVH
VCC and VBS supply undervoltage lock-out hysteresis
---
0.2
---
V
VIN,Clamp
Input Clamp Voltage (HIN, LIN, T/ITRIP) IIN=10μA
4.9
5.2
5.5
V
IQBS
Quiescent VBS supply current VIN=0V
---
---
165
μA
IQCC
Quiescent VCC supply current VIN=0V
---
---
3.35
mA
ILK
Offset Supply Leakage Current
---
---
60
μA
IIN+
Input bias current VIN=5V
---
200
300
μA
IIN-
Input bias current VIN=0V
---
100
220
μA
---
30
100
μA
ITRIP+
ITRIP bias current VITRIP=5V
ITRIP-
ITRIP bias current VITRIP=0V
---
0
1
μA
V(ITRIP)
ITRIP threshold Voltage
440
490
540
mV
V(ITRIP,HYS)
ITRIP Input Hysteresis
---
70
---
mV
Dynamic Electrical Characteristics
Driver only timing unless otherwise specified.)
Symbol
Parameter
Min
Typ
Max
TON
Input to Output propagation turnon delay time (see fig.11)
---
600
---
TOFF
Input to Output propagation turnoff delay time (see fig. 11)
---
700
---
ns
TFLIN
Input Filter time (HIN, LIN)
100
200
---
ns
VIN=0 & VIN=5V
TBLT-Trip
ITRIP Blancking Time
100
150
ns
VIN=0 & VIN=5V
DT
Dead Time (VBS=VDD=15V)
220
290
MT
Matching Propagation Delay Time
(On & Off)
---
40
TITrip
ITrip to six switch to turn-off
propagation delay (see fig. 2)
---
TFLT-CLR
Post ITrip to six switch to turn-off
clear time (see fig. 2)
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Units Conditions
ns
VCC=VBS= 15V, IC=15A, V+=400V
ns
VBS=VCC=15V
75
ns
VCC= VBS= 15V, external dead
time> 400ns
---
3.75
μs
VCC=VBS= 15V, IC=15A, V+=400V
---
34
---
---
29
---
360
ms
TC = 25°C
TC = 100°C
5
IRAM136-3063B
Thermal and Mechanical Characteristics
Symbol
Parameter
Min
Typ
Max
Rth(J-C)
Thermal resistance, per IGBT
---
1.5
1.7
Rth(J-C)
Thermal resistance, per Diode
---
2.5
---
Rth(C-S)
Thermal resistance, C-S
---
0.1
---
CD
Creepage Distance
3.5
---
---
Units Conditions
Flat, greased surface. Heatsink
°C/W compound thermal conductivity
1W/mK
mm
See outline Drawings
Internal Current Sensing Resistor - Shunt Characteristics
Symbol
Parameter
Min
Typ
Max
Units Conditions
RShunt
Resistance
9.4
9.6
9.8
m
TCoeff
Temperature Coefficient
0
---
200
ppm/°C
PShunt
Power Dissipation
---
---
4.5
W
TRange
Temperature Range
-20
---
125
°C
TC = 25°C
-40°C < TC < 100°C
Internal NTC - Thermistor Characteristics
Parameter
Definition
Min
Typ
Max
R25
Units Conditions
Resistance
97
100
103
k
TC = 25°C
R125
Resistance
2.25
2.52
2.8
k
TC = 125°C
B
B-constant (25-50°C)
4165
4250
4335
k
Temperature Range
-40
---
125
°C
Typ. Dissipation constant
---
1
---
R2 = R1e [B(1/T2 - 1/T1)]
mW/°C TC = 25°C
Input-Output Logic Level Table
V+
Ho
HIN1,2,3
U,V,W
(20,22,23)
IC
Driver
(10,6,2)
LIN1,2,3
Lo
(24,25,26)
6
FLT/EN
ITRIP
HIN1,2,3
LIN1,2,3
U,V,W
1
0
1
0
V+
1
0
0
1
0
1
0
0
0
Off
1
1
X
X
Off
0
X
X
X
Off
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IRAM136-3063B
Figure 1. Input/Output Timing Diagram
HIN1,2,3
LIN1,2,3
50%
50%
ITRIP
U,V,W
50%
50%
TITRIP
TFLT-CLR
Figure 2. ITRIP Timing Waveform
Note 7: The shaded area indicates that both high-side and low-side switches are off and therefore the halfbridge output voltage would be determined by the direction of current flow in the load.
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7
IRAM136-3063B
Module Pin-Out Description
8
Pin
Name
1
VB1
2
U, VS1
Description
High Side Floating Supply Voltage 1
Output 1 - High Side Floating Supply Offset Voltage
3
NA
none
4
VB2
High Side Floating Supply voltage 2
5
V,VS2
6
NA
none
7
VB3
High Side Floating Supply voltage 3
8
W,VS3
9
NA
+
Output 2 - High Side Floating Supply Offset Voltage
Output 3 - High Side Floating Supply Offset Voltage
none
10
V
Positive Bus Input Voltage
11
NA
none
12
V-
Negative Bus Input Voltage
13
HIN1
Logic Input High Side Gate Driver - Phase 1
14
HIN2
Logic Input High Side Gate Driver - Phase 2
15
HIN3
Logic Input High Side Gate Driver - Phase 3
16
LIN1
Logic Input Low Side Gate Driver - Phase 1
17
LIN2
Logic Input Low Side Gate Driver - Phase 2
18
LIN3
Logic Input Low Side Gate Driver - Phase 3
19
Fault/TMON
20
ISense
21
VCC
+15V Main Supply
22
VSS
Negative Main Supply
Temperature Monitor and Fault Function
Current Monitor
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IRAM136-3063B
Typical Application Connection IRAM136-3063B
1
VB1
BOOT-STRAP
CAPACITORS
U
VB2
V
VB3
V+
W
V+
DC BUS
CAPACITORS
VHIN1
+5V
HIN2
HIN3
LIN1
LIN2
LIN3
FLT/TMON
Date Code Lot #
IRAM136-3063B
3-Phase AC
MOTOR
ITRIP
CONTROLLER
12kohm
VSS
+5V
22
Fault & Temp
Monitor
Vcc (15 V)
IMonitor
+15V
0.1m
10m
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce
ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins
will further improve performance.
2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors
shown connected between these terminals should be located very close to the module pins. Additional
high frequency capacitors, typically 0.1μF, are strongly recommended.
3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be
made based on IR design tip DN 98-2a, application note AN-1044 or Figure 9. Bootstrap capacitor value
must be selected to limit the power dissipation of the internal resistor in series with the VCC. (see
maximum ratings Table on page 3).
4. After approx. 8ms the FAULT is reset. (see Dynamic Characteristics Table on page 5).
5. PWM generator must be disabled within Fault duration to guarantee shutdown of the system, overcurrent
condition must be cleared before resuming operation.
6. Fault/TMON Monitor pin must be pulled-up to +5V.
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9
IRAM136-3063B
Maximum Output Phase RMS Current - A
22
20
18
16
14
12
10
TC = 80ºC
TC = 90ºC
TC = 100ºC
8
6
4
2
0
0
2
4
6
8
10
12
14
16
18
20
PWM Sw itching Frequency - kHz
Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency
Sinusoidal Modulation, V+=400V, TJ=150°C, Modulation Depth=0.8, PF=0.6
Maximum Output Phase RMS Current - A
18
16
14
12
10
8
FPWM = 6kHz
FPWM = 9kHz
FPWM = 12kHz
6
4
2
0
1
10
100
Modulation Frequency - Hz
Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency
Sinusoidal Modulation, V+=400V, TJ=100°C, Modulation Depth=0.8, PF=0.6
10
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IRAM136-3063B
350
Total Power Loss- W
300
250
200
150
100
IOUT = 18A
IOUT = 15A
IOUT = 12A
50
0
0
2
4
6
8
10
12
14
16
18
20
PWM Sw itching Frequency - kHz
Figure 5. Total Power Losses vs. PWM Switching Frequency
Sinusoidal Modulation, V+=400V, TJ=150°C, Modulation Depth=0.8, PF=0.6
350
Total Power Loss - W
300
250
200
150
FPWM = 12kHz
FPWM = 9kHz
FPWM = 6kHz
100
50
0
0
2
4
6
8
10
12
14
16
18
20
22
24
Output Phase Current - ARMS
Figure 6. Total Power Losses vs. Output Phase Current
Sinusoidal Modulation, V+=400V, TJ=150°C, Modulation Depth=0.8, PF=0.6
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11
IRAM136-3063B
Max Allowable Case Temperature - ºC
160
140
120
100
80
60
FPWM = 6kHz
FPWM = 9kHz
FPWM = 12kHz
40
20
0
0
2
4
6
8
10
12
14
16
18
20
22
24
Output Phase Current - ARMS
Figure 7. Maximum Allowable Case Temperature vs. Output RMS Current per Phase
Sinusoidal Modulation, V+=400V, TJ=150°C, Modulation Depth=0.8, PF=0.6
IGBT Junction Temperature - °C
160
150
140
130
120
110
98.3
100
65
70
75
80
85
90
95
100
105
Internal Therm istor Tem perature Equivalent Read Out - °C
Figure 8. Estimated Maximum MOSFET Junction Temperature vs. Thermistor Temperature
Sinusoidal Modulation, V+=400V, Iphase=15Arms, fsw=6kHz, fmod=50Hz, MI=0.8, PF=0.6
12
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IRAM136-3063B
5.0
+5V
Thermistor Pin Read-Out Voltage - V
4.5
REXT
4.0
3.5
3.0
2.5
VTherm
TTHERM
°C
-40
-35
-30
-25
RTHERM TTHERM RTHERM TTHERM
°C
°C
4397119
25
100000
90
3088599
30
79222
95
2197225
35
63167
100
1581881
40
50677
105
RTHERM
7481
6337
5384
4594
2.0
-20
-15
1151037
846579
45
50
40904
33195
110
115
3934
3380
1.5
-10
-5
0
628988
471632
357012
55
60
65
27091
22224
18322
120
125
130
2916
2522
2190
5
10
272500
209710
70
75
15184
12635
135
140
1907
1665
15
20
162651
127080
80
85
10566
8873
145
150
1459
1282
1.0
0.5
0.0
-40 -30 -20 -10 0
RTherm
Min
Avg.
Max
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
Therm istor Tem perature - °C
Recommended Bootstrap Capacitor - F
Figure 9. Thermistor Readout vs. Temperature (12Kohm pull-up resistor, 5V) and
Normal Thermistor Resistance values vs. Temperature Table.
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
15F
10F
6.8F
4.7F
0
5
10
15
20
PWM Frequency - kHz
Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency
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13
IRAM136-3063B
Figure 11. Switching Parameter Definitions
Figure 11a. Input to Output propagation turn-on
delay time.
Figure 11b. Input to Output propagation turn-off
delay time.
Figure 11c. Diode Reverse Recovery.
14
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IRAM136-3063B
V+
Ho
Hin1,2,3
IC
Driver
U,V,W
Lo
Lin1,2,3
Figure CT1. Switching Loss Circuit
V+
Lin1,2,3
IN
Ho
Hin1,2,3
IC
Driver
U,V,W
IO
Lo
Io
Figure CT2. S.C.SOA Circuit
V+
IC
Driver
Lin1,2,3
IN
Ho
Hin1,2,3
U,V,W
IO
Lo
Io
Figure CT3. R.B.SOA Circuit
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15
IRAM136-3063B
Package Outline
Missing Pin : 3,6,9,11
Ԙ
note3
note4
IRAM136-3063B
P 4KB00
note2
note5
Ԛ
ԙ
note1: Unit Tolerance is +0.5mm,
䇭䇭䇭 Unless Otherwise Specified.
note2: Mirror Surface Mark indicates Pin1 Identification.
note3: Characters Font in this drawing differs from
䇭䇭䇭䇭 Font shown on Module.
note4: Lot Code Marking.
Characters Font in this drawing differs from
䇭䇭䇭䇭 Font shown on Module.
note5: “P” Character denotes Lead Free.
Characters Font in this drawing differs from
Font shown on Module.
For mounting instruction see AN-1049
Data and Specifications are subject to change without notice
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11/2007
16
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