PHILIPS PBSS3540F

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D425
PBSS3540F
40 V low VCEsat PNP transistor
Product specification
2001 Jul 13
Philips Semiconductors
Product specification
40 V low VCEsat PNP transistor
PBSS3540F
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage
SYMBOL
• High current capability
VCEO
collector-emitter voltage
−40
V
ICM
peak collector current
−1
A
RCEsat
equivalent on-resistance
<700
mΩ
• Improved thermal behaviour due to flat leads
• Enhanced performance over SOT23 general purpose
transistors.
PARAMETER
MAX.
UNIT
PINNING
APPLICATIONS
PIN
• General purpose switching and muting
• Low frequency driver circuits
• Audio frequency general purpose applications
• Battery driven equipment (mobile phones, video
cameras, hand-held devices).
DESCRIPTION
1
base
2
emitter
3
collector
handbook, halfpage
3
3
DESCRIPTION
1
PNP low VCEsat transistor in a SC-89 (SOT490) plastic
package.
NPN complement: PBSS2540F.
1
2
2
Top view
MAM411
MARKING
TYPE NUMBER
Fig.1
MARKING CODE
PBSS3540F
Simplified outline (SC-89; SOT490) and
symbol.
2D
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−40
V
VCEO
collector-emitter voltage
open base
−
−40
V
VEBO
emitter-base voltage
open collector
−
−6
V
IC
collector current (DC)
−
−500
mA
ICM
peak collector current
−
−1
A
IBM
peak base current
Ptot
total power dissipation
Tstg
−
−100
mA
−
250
mW
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
2001 Jul 13
Tamb ≤ 25 °C
2
Philips Semiconductors
Product specification
40 V low VCEsat PNP transistor
PBSS3540F
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
in free air
VALUE
UNIT
500
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCB = −40 V; IE = 0
−
−
−100
nA
VCB = −40 V; IE = 0; Tj = 150 °C
−
−
−50
µA
VEB = −5 V; IC = 0
−
−
−100
nA
ICBO
collector-base cut-off current
IBEO
emitter-base cut-off current
hFE
DC current gain
VCE = −2 V
VCEsat
MIN.
IC = −10 mA
200
−
−
IC = −100 mA; note 1
150
−
−
IC = −500 mA; note 1
40
−
−
collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA
−
−
−50
mV
IC = −100 mA; IB = −5 mA
−
−
−130
mV
IC = −200 mA; IB = −10 mA
−
−
−200
mV
IC = −500 A; IB = −50 mA; note 1
−
−
−350
mV
RCEsat
equivalent on-resistance
IC = −500 mA; IB = −50 mA; note 1
−
440
<700
mΩ
VBEsat
base-emitter saturation voltage
IC = −500 mA; IB = −50 mA; note 1
−
−
−1.2
V
VBEon
base-emitter turn-on voltage
VCE = −2 V; IC = −100 mA; note 1
−
−
−1.1
V
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0; f = 1 MHz
−
−
10
pF
fT
transition frequency
IC = −100 mA; VCE = −5 V;
f = 100 MHz
100
300
−
MHz
Note
1. Pulse test: tp ≤ 300 ms; δ ≤ 0.02.
2001 Jul 13
3
Philips Semiconductors
Product specification
40 V low VCEsat PNP transistor
PBSS3540F
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT490
D
E
B
A
X
HE
v M A
3
A
1
c
2
e1
bp
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
v
w
mm
0.8
0.6
0.33
0.23
0.2
0.1
1.7
1.5
0.95
0.75
1.0
0.5
1.7
1.5
0.5
0.3
0.1
0.1
OUTLINE
VERSION
SOT490
2001 Jul 13
REFERENCES
IEC
JEDEC
EIAJ
SC-89
4
EUROPEAN
PROJECTION
ISSUE DATE
98-10-23
Philips Semiconductors
Product specification
40 V low VCEsat PNP transistor
PBSS3540F
DATA SHEET STATUS
DATA SHEET STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury.
Philips Semiconductors customers using or selling these
products for use in such applications do so at their own
risk and agree to fully indemnify Philips Semiconductors
for any damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in
the Characteristics sections of the specification is not
implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or
title under any patent, copyright, or mask work right to
these products, and makes no representations or
warranties that these products are free from patent,
copyright, or mask work right infringement, unless
otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will
be suitable for the specified use without further testing or
modification.
2001 Jul 13
5
Philips Semiconductors
Product specification
40 V low VCEsat PNP transistor
PBSS3540F
NOTES
2001 Jul 13
6
Philips Semiconductors
Product specification
40 V low VCEsat PNP transistor
PBSS3540F
NOTES
2001 Jul 13
7
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SCA 72
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Printed in The Netherlands
613514/01/pp8
Date of release: 2001
Jul 13
Document order number:
9397 750 08373