APTM100H45STG Full bridge Series & parallel diodes MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies VBUS CR3A CR1A CR1B Q1 CR3B Q3 G3 G1 OUT1 OUT2 S1 Q2 S3 CR4A CR2A CR2B CR4B Q4 G2 G4 S2 S4 NTC1 VDSS = 1000V RDSon = 450mΩ typ @ Tj = 25°C ID = 18A @ Tc = 25°C 0/VBU S NTC2 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1000 18 14 72 ±30 540 357 18 50 2500 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–8 APTM100H45STG – Rev 5 October, 2013 Symbol VDSS APTM100H45STG Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min VGS = 0V,VDS= 1000V Tj = 25°C VGS = 0V,VDS= 800V Tj = 125°C VGS = 10V, ID = 9A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V Typ 450 3 Max 100 500 540 5 ±100 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 25V f = 1MHz Min Typ 4350 715 120 pF 154 VGS = 10V VBus = 500V ID = 18A 26 nC 97 10 Inductive switching @ 125°C VGS = 15V VBus = 667V ID = 18A RG = 5Ω 12 ns 121 35 Inductive switching @ 25°C VGS = 15V, VBus = 667V ID = 18A, RG = 5Ω 639 µJ 380 Inductive switching @ 125°C VGS = 15V, VBus = 667V ID = 18A, RG = 5Ω 1046 µJ 451 0.35 °C/W Max Unit V µA Series diode ratings and characteristics IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge RthJC Min 1000 250 Tc = 65°C IF = 30A IF = 60A IF = 30A IF = 30A VR = 667V Typ Tj = 125°C 30 1.9 2.2 1.7 Tj = 25°C 290 Tj = 125°C 390 Tj = 25°C 670 Tj = 125°C 2350 di/dt = 200A/µs Junction to Case Thermal Resistance A 2.3 V ns nC 1.2 www.microsemi.com °C/W 2–8 APTM100H45STG – Rev 5 October, 2013 Symbol Characteristic Test Conditions VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current VR=1000V APTM100H45STG Parallel diode ratings and characteristics Symbol Characteristic Test Conditions VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current VR=1000V IF VF Tc = 65°C IF = 30A IF = 60A IF = 30A Diode Forward Voltage Reverse Recovery Time Qrr Reverse Recovery Charge IF = 30A VR = 667V Typ Max 250 DC Forward Current trr RthJC Min 1000 Tj = 125°C 30 1.9 2.2 1.7 Tj = 25°C 290 Tj = 125°C 390 Tj = 25°C 670 Tj = 125°C 2350 di/dt = 200A/µs Unit V µA A 2.3 V ns Junction to Case Thermal Resistance nC 1.2 °C/W Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To Heatsink M5 Package Weight Min 4000 -40 -40 -40 -40 2.5 Max 150 TJmax -25 125 100 4.7 160 Unit V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com). Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R 25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature 1 ⎞⎤ RT: Thermistor value at T ⎡ ⎛ 1 − ⎟⎟⎥ exp⎢ B 25 / 85 ⎜⎜ ⎢⎣ ⎝ T25 T ⎠⎥⎦ www.microsemi.com 3–8 APTM100H45STG – Rev 5 October, 2013 Symbol R25 ∆R25/R25 B25/85 ∆B/B APTM100H45STG SP4 Package outline (dimensions in mm) www.microsemi.com 4–8 APTM100H45STG – Rev 5 October, 2013 See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTM100H45STG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.4 0.35 0.9 0.3 0.7 0.25 0.2 0.5 0.15 0.3 0.1 Single Pulse 0.1 0.05 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 80 VDS > ID (on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 70 50 VGS=15&8V 7V 40 6.5V 30 6V 20 5.5V 10 ID, Drain Current (A) 60 50 TJ=125°C 40 30 20 TJ=25°C 10 5V 0 0 5 10 15 20 25 0 30 0 Normalized to VGS=10V @ 9A 1.2 VGS=10V 1.1 VGS=20V 1 0.9 0.8 0 10 20 30 40 3 4 5 6 7 8 9 10 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.4 1.3 2 VGS, Gate to Source Voltage (V) ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance VDS , Drain to Source Voltage (V) 1 50 20 18 16 14 12 10 8 6 4 2 0 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 5–8 APTM100H45STG – Rev 5 October, 2013 ID, Drain Current (A) 60 Breakdown Voltage vs Temperature 1.15 1.10 1.05 1.00 0.95 0.90 25 50 75 100 125 150 RDS (on), Drain to Source ON resistance (Normalized) BVDSS , Drain to Source Breakdown Voltage (Normalized) APTM100H45STG ON resistance vs Temperature 2.5 VGS=10V I D=9A 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 TJ, Junction Temperature (°C) T J, Junction Temperature (°C) Maximum Safe Operating Area Threshold Voltage vs Temperature 100 1.1 1.0 ID, Drain Current (A) 0.9 0.8 0.7 10 10ms 1 0.6 Single pulse T J =150°C T C=25°C 0 25 50 75 100 125 1 150 10000 Ciss 1000 Coss Crss VGS , Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 100 10 20 30 100 1000 Gate Charge vs Gate to Source Voltage 14 VDS=200V ID=18A 12 TJ =25°C 40 VDS=500V 10 10 0 10 VDS , Drain to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) 1ms 50 VDS, Drain to Source Voltage (V) 8 VDS=800V 6 4 2 0 0 40 80 120 160 200 Gate Charge (nC) www.microsemi.com 6–8 APTM100H45STG – Rev 5 October, 2013 VGS (TH), Threshold Voltage (Normalized) 100µs limited by R DSon APTM100H45STG Delay Times vs Current Rise and Fall times vs Current 60 160 td(off) VDS=667V RG=5Ω TJ=125°C L=100µH 50 120 100 tr and tf (ns) VDS=667V RG=5Ω TJ=125°C L=100µH 80 60 40 30 tr 20 40 td(on) 20 10 0 0 5 10 15 20 25 30 35 40 5 10 ID, Drain Current (A) 35 40 2.5 VDS=667V RG=5Ω TJ=125°C L=100µH 1.5 Eon 1 Eoff 0.5 VDS=667V ID=18A TJ=125°C L=100µH 2 Switching Energy (mJ) Switching Energy (mJ) 15 20 25 30 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 2 1.5 Eoff Eon 1 Eoff 0.5 0 0 5 10 15 20 25 30 35 40 0 ID, Drain Current (A) 5 10 15 20 25 30 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 250 ZVS 200 ZCS IDR, Reverse Drain Current (A) 300 Frequency (kHz) tf VDS=667V D=50% RG=5Ω TJ=125°C TC=75°C 150 100 Hard switching 50 100 TJ=150°C 0 6 8 10 12 14 16 ID, Drain Current (A) TJ=25°C 10 18 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) www.microsemi.com 7–8 APTM100H45STG – Rev 5 October, 2013 td(on) and td(off) (ns) 140 APTM100H45STG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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