APTM100H45STG-Rev5.pdf

APTM100H45STG
Full bridge
Series & parallel diodes
MOSFET Power Module
Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
VBUS
CR3A
CR1A
CR1B
Q1
CR3B
Q3
G3
G1
OUT1 OUT2
S1
Q2
S3
CR4A
CR2A
CR2B
CR4B
Q4
G2
G4
S2
S4
NTC1
VDSS = 1000V
RDSon = 450mΩ typ @ Tj = 25°C
ID = 18A @ Tc = 25°C
0/VBU S
NTC2
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1000
18
14
72
±30
540
357
18
50
2500
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–8
APTM100H45STG – Rev 5 October, 2013
Symbol
VDSS
APTM100H45STG
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min
VGS = 0V,VDS= 1000V
Tj = 25°C
VGS = 0V,VDS= 800V
Tj = 125°C
VGS = 10V, ID = 9A
VGS = VDS, ID = 2.5mA
VGS = ±30 V, VDS = 0V
Typ
450
3
Max
100
500
540
5
±100
Unit
Max
Unit
µA
mΩ
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
RthJC
Junction to Case Thermal Resistance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
Typ
4350
715
120
pF
154
VGS = 10V
VBus = 500V
ID = 18A
26
nC
97
10
Inductive switching @ 125°C
VGS = 15V
VBus = 667V
ID = 18A
RG = 5Ω
12
ns
121
35
Inductive switching @ 25°C
VGS = 15V, VBus = 667V
ID = 18A, RG = 5Ω
639
µJ
380
Inductive switching @ 125°C
VGS = 15V, VBus = 667V
ID = 18A, RG = 5Ω
1046
µJ
451
0.35
°C/W
Max
Unit
V
µA
Series diode ratings and characteristics
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
RthJC
Min
1000
250
Tc = 65°C
IF = 30A
IF = 60A
IF = 30A
IF = 30A
VR = 667V
Typ
Tj = 125°C
30
1.9
2.2
1.7
Tj = 25°C
290
Tj = 125°C
390
Tj = 25°C
670
Tj = 125°C
2350
di/dt = 200A/µs
Junction to Case Thermal Resistance
A
2.3
V
ns
nC
1.2
www.microsemi.com
°C/W
2–8
APTM100H45STG – Rev 5 October, 2013
Symbol Characteristic
Test Conditions
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
Maximum Reverse Leakage Current
VR=1000V
APTM100H45STG
Parallel diode ratings and characteristics
Symbol Characteristic
Test Conditions
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
Maximum Reverse Leakage Current
VR=1000V
IF
VF
Tc = 65°C
IF = 30A
IF = 60A
IF = 30A
Diode Forward Voltage
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 30A
VR = 667V
Typ
Max
250
DC Forward Current
trr
RthJC
Min
1000
Tj = 125°C
30
1.9
2.2
1.7
Tj = 25°C
290
Tj = 125°C
390
Tj = 25°C
670
Tj = 125°C
2350
di/dt = 200A/µs
Unit
V
µA
A
2.3
V
ns
Junction to Case Thermal Resistance
nC
1.2
°C/W
Thermal and package characteristics
Symbol
VISOL
TJ
TJOP
TSTG
TC
Torque
Wt
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Recommended junction temperature under switching conditions
Storage Temperature Range
Operating Case Temperature
Mounting torque
To Heatsink
M5
Package Weight
Min
4000
-40
-40
-40
-40
2.5
Max
150
TJmax -25
125
100
4.7
160
Unit
V
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com).
Characteristic
Resistance @ 25°C
Min
T25 = 298.15 K
TC=100°C
RT =
R 25
Typ
50
5
3952
4
Max
Unit
kΩ
%
K
%
T: Thermistor temperature
1 ⎞⎤ RT: Thermistor value at T
⎡
⎛ 1
− ⎟⎟⎥
exp⎢ B 25 / 85 ⎜⎜
⎢⎣
⎝ T25 T ⎠⎥⎦
www.microsemi.com
3–8
APTM100H45STG – Rev 5 October, 2013
Symbol
R25
∆R25/R25
B25/85
∆B/B
APTM100H45STG
SP4 Package outline (dimensions in mm)
www.microsemi.com
4–8
APTM100H45STG – Rev 5 October, 2013
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
APTM100H45STG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.4
0.35
0.9
0.3
0.7
0.25
0.2
0.5
0.15
0.3
0.1
Single Pulse
0.1
0.05
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Transfert Characteristics
Low Voltage Output Characteristics
80
VDS > ID (on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
70
50
VGS=15&8V
7V
40
6.5V
30
6V
20
5.5V
10
ID, Drain Current (A)
60
50
TJ=125°C
40
30
20
TJ=25°C
10
5V
0
0
5
10
15
20
25
0
30
0
Normalized to
VGS=10V @ 9A
1.2
VGS=10V
1.1
VGS=20V
1
0.9
0.8
0
10
20
30
40
3
4
5
6
7
8
9 10
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.4
1.3
2
VGS, Gate to Source Voltage (V)
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
VDS , Drain to Source Voltage (V)
1
50
20
18
16
14
12
10
8
6
4
2
0
ID, Drain Current (A)
25
50
75
100
125
150
TC, Case Temperature (°C)
www.microsemi.com
5–8
APTM100H45STG – Rev 5 October, 2013
ID, Drain Current (A)
60
Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
0.95
0.90
25
50
75
100
125
150
RDS (on), Drain to Source ON resistance
(Normalized)
BVDSS , Drain to Source Breakdown Voltage
(Normalized)
APTM100H45STG
ON resistance vs Temperature
2.5
VGS=10V
I D=9A
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
TJ, Junction Temperature (°C)
T J, Junction Temperature (°C)
Maximum Safe Operating Area
Threshold Voltage vs Temperature
100
1.1
1.0
ID, Drain Current (A)
0.9
0.8
0.7
10
10ms
1
0.6
Single pulse
T J =150°C
T C=25°C
0
25
50
75
100
125
1
150
10000
Ciss
1000
Coss
Crss
VGS , Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
100
10
20
30
100
1000
Gate Charge vs Gate to Source Voltage
14
VDS=200V
ID=18A
12
TJ =25°C
40
VDS=500V
10
10
0
10
VDS , Drain to Source Voltage (V)
TC, Case Temperature (°C)
C, Capacitance (pF)
1ms
50
VDS, Drain to Source Voltage (V)
8
VDS=800V
6
4
2
0
0
40
80
120
160
200
Gate Charge (nC)
www.microsemi.com
6–8
APTM100H45STG – Rev 5 October, 2013
VGS (TH), Threshold Voltage
(Normalized)
100µs
limited by
R DSon
APTM100H45STG
Delay Times vs Current
Rise and Fall times vs Current
60
160
td(off)
VDS=667V
RG=5Ω
TJ=125°C
L=100µH
50
120
100
tr and tf (ns)
VDS=667V
RG=5Ω
TJ=125°C
L=100µH
80
60
40
30
tr
20
40
td(on)
20
10
0
0
5
10
15
20
25
30
35
40
5
10
ID, Drain Current (A)
35
40
2.5
VDS=667V
RG=5Ω
TJ=125°C
L=100µH
1.5
Eon
1
Eoff
0.5
VDS=667V
ID=18A
TJ=125°C
L=100µH
2
Switching Energy (mJ)
Switching Energy (mJ)
15
20
25
30
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
2
1.5
Eoff
Eon
1
Eoff
0.5
0
0
5
10
15
20
25
30
35
40
0
ID, Drain Current (A)
5
10
15
20
25
30
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
250
ZVS
200
ZCS
IDR, Reverse Drain Current (A)
300
Frequency (kHz)
tf
VDS=667V
D=50%
RG=5Ω
TJ=125°C
TC=75°C
150
100
Hard
switching
50
100
TJ=150°C
0
6
8
10
12
14
16
ID, Drain Current (A)
TJ=25°C
10
18
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
www.microsemi.com
7–8
APTM100H45STG – Rev 5 October, 2013
td(on) and td(off) (ns)
140
APTM100H45STG
DISCLAIMER
The information contained in the document (unless it is publicly available on the Web without access restrictions) is
PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted,
transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the
recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement
will also apply. This document and the information contained herein may not be modified, by any person other than
authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property
right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication,
inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi
product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all
faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims
any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
www.microsemi.com
8–8
APTM100H45STG – Rev 5 October, 2013
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
Similar pages