APTM50AM35FTG-Rev3.pdf

APTM50AM35FTG
VDSS = 500V
RDSon = 35m typ @ Tj = 25°C
ID = 99A @ Tc = 25°C
Phase leg
MOSFET Power Module
VBUS
NTC2
Q1
G1
S1
OUT
Q2
G2
S2
0/VBU S
NTC1
Application
 Welding converters
 Switched Mode Power Supplies
 Uninterruptible Power Supplies
Features
 Power MOS 7® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
 Kelvin source for easy drive
 Very low stray inductance
- Symmetrical design
- Lead frames for power connections
 Internal thermistor for temperature monitoring
 High level of integration
Benefits
 Outstanding performance at high frequency operation
 Direct mounting to heatsink (isolated package)
 Low junction to case thermal resistance
 Solderable terminals both for power and signal for
easy PCB mounting
 Low profile
 RoHS Compliant
Absolute maximum ratings
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
500
99
74
396
±30
39
781
51
50
3000
Unit
V
A
V
m
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1–7
APTM50AM35FTG – Rev 3 October, 2012
Symbol
VDSS
APTM50AM35FTG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min
VGS = 0V,VDS = 500V
Tj = 25°C
VGS = 0V,VDS = 400V
Tj = 125°C
VGS = 10V, ID = 49.5A
VGS = VDS, ID = 5mA
VGS = ±30 V, VDS = 0V
Typ
35
3
Max
200
1000
39
5
±150
Unit
Max
Unit
µA
m
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 99A
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Min
Typ
14
2.8
0.2
nF
280
nC
80
140
21
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 99A
RG = 1
38
ns
75
93
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 99A, RG = 1Ω
2070
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 99A, RG = 1Ω
3112
µJ
1690
µJ
2026
Source - Drain diode ratings and characteristics
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Min
Typ
Tj = 25°C
Max
99
74
1.3
15
270
Tj = 125°C
540
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 99A
IS = - 99A
VR = 333V
diS/dt = 200A/µs
Tj = 25°C
5.2
Tj = 125°C
19.2
Unit
A
V
V/ns
ns
µC
 dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS  - 99A
di/dt  700A/µs
VR  VDSS
Tj  150°C
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2–7
APTM50AM35FTG – Rev 3 October, 2012
Symbol Characteristic
IS
Continuous Source current
(Body diode)
VSD
Diode Forward Voltage
dv/dt Peak Diode Recovery 
APTM50AM35FTG
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Characteristic
Junction to Case Thermal Resistance
Min
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
4000
-40
-40
-40
2.5
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To Heatsink
M5
Typ
Max
0.16
150
125
100
4.7
160
Unit
°C/W
V
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
RT 
Min
Typ
50
3952
Max
Unit
k
K
R25
T: Thermistor temperature

 1
1  RT: Thermistor value at T
exp  B25 / 85 
 
 T25 T 

See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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3–7
APTM50AM35FTG – Rev 3 October, 2012
SP4 Package outline (dimensions in mm)
APTM50AM35FTG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.18
0.16
0.9
0.14
0.7
0.12
0.1
0.5
0.08
0.06
0.3
0.04
0.1
0.05
0.02
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
ID, Drain Current (A)
VGS=10&15V
7V
200
6.5V
6V
100
5.5V
150
5
10
15
20
VDS, Drain to Source Voltage (V)
VGS=20V
0.95
0.9
40
60
80
100
2
4
6
8
DC Drain Current vs Case Temperature
1
20
TJ=-55°C
VGS, Gate to Source Voltage (V)
VGS=10V
0
TJ=125°C
0
25
Normalized to
VGS=10V @ 49.5A
1.05
50
0
RDS(on) vs Drain Current
1.1
TJ=25°C
100
5V
0
0
200
120
ID, Drain Current (A)
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100
90
80
70
60
50
40
30
20
10
0
25
50
75
100
125
TC, Case Temperature (°C)
150
4–7
APTM50AM35FTG – Rev 3 October, 2012
300
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
250
ID, DC Drain Current (A)
ID, Drain Current (A)
8V
RDS(on) Drain to Source ON Resistance
Transfert Characteristics
300
400
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25
50
75 100 125 150
ON resistance vs Temperature
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25
Threshold Voltage vs Temperature
25
50
75 100 125 150
Maximum Safe Operating Area
1000
1.2
1.1
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
0
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
1.0
0.9
0.8
0.7
100 us
limited by RDSon
100
1 ms
10
Single pulse
TJ=150°C
TC=25°C
10 ms
100 ms
1
0.6
1
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Ciss
10000
Coss
1000
Crss
100
10
0
10
20
30
40
VDS, Drain to Source Voltage (V)
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
C, Capacitance (pF)
VGS=10V
ID=49.5A
14
ID=99A
TJ=25°C
12
VDS=100V
VDS=250V
10
50
VDS=400V
8
6
4
2
0
0
50
100 150 200 250 300 350
Gate Charge (nC)
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5–7
APTM50AM35FTG – Rev 3 October, 2012
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
RDS(on), Drain to Source ON resistance
(Normalized)
APTM50AM35FTG
APTM50AM35FTG
Rise and Fall times vs Current
160
70
140
td(off)
VDS=333V
RG=1Ω
TJ=125°C
L=100µH
60
50
40
30
VDS=333V
RG=1Ω
TJ=125°C
L=100µH
120
tr and tf (ns)
td(on)
100
80
tr
60
40
20
20
10
0
0
20
40
60
0
80 100 120 140 160
20
ID, Drain Current (A)
10
VDS=333V
RG=1Ω
TJ=125°C
L=100µH
5
4
Eon
3
Switching Energy (mJ)
Switching Energy (mJ)
40 60 80 100 120 140 160
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
6
Eoff
2
1
VDS=333V
ID=99A
TJ=125°C
L=100µH
8
6
Eoff
Eon
4
Eoff
2
0
0
0
20
40
60
0
80 100 120 140 160
ID, Drain Current (A)
Operating Frequency vs Drain Current
350
ZVS
300
250
IDR, Reverse Drain Current (A)
400
VDS=333V
D=50%
RG=1Ω
TJ=125°C
TC=75°C
200
ZCS
150
Hard
switching
100
50
0
10
20
5
10
15
20
25
Gate Resistance (Ohms)
450
Frequency (kHz)
tf
30 40 50 60 70
ID, Drain Current (A)
80
Source to Drain Diode Forward Voltage
1000
100
TJ=150°C
TJ=25°C
10
90
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1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
6–7
APTM50AM35FTG – Rev 3 October, 2012
td(on) and td(off) (ns)
Delay Times vs Current
80
APTM50AM35FTG
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Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
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is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
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subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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APTM50AM35FTG – Rev 3 October, 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
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