APTM50AM38STG-Rev7.pdf

APTM50AM38STG
Phase leg
Series & parallel diodes
MOSFET Power Module
VDSS = 500V
RDSon = 38mΩ typ @ Tj = 25°C
ID = 90A @ Tc = 25°C
Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
NTC2
VBUS
Q1
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
G1
OUT
S1
Q2
G2
0/VBU S
S2
NTC1
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS compliant
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
500
90
67
360
±30
45
694
46
50
2500
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–8
APTM50AM38STG – Rev 7 October, 2013
Symbol
VDSS
APTM50AM38STG
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Test Conditions
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Min
VGS = 0V,VDS = 500V
Tj = 25°C
VGS = 0V,VDS = 400V
Tj = 125°C
VGS = 10V, ID = 45A
VGS = VDS, ID = 5mA
VGS = ±30 V, VDS = 0V
Typ
38
3
Max
200
1000
45
5
±200
Unit
Max
Unit
µA
mΩ
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
RthJC
Junction to Case Thermal Resistance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
Typ
11.2
2.4
0.18
nF
246
VGS = 10V
VBus = 250V
ID = 90A
66
nC
130
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 90A
RG = 2Ω
18
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 90A, RG = 2Ω
1510
35
ns
87
77
µJ
1452
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 90A, RG = 2Ω
2482
µJ
1692
0.18
°C/W
Max
Unit
V
µA
A
Series diode ratings and characteristics
VF
Characteristic
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
RthJC
Test Conditions
Min
600
Maximum Peak Repetitive Reverse Voltage
Typ
VR=600V
250
Tc = 80°C
IF = 90A
IF = 180A
IF = 90A
IF = 90A
VR = 400V
di/dt = 600A/µs
Junction to Case Thermal Resistance
Tj = 125°C
90
1.6
1.9
1.4
Tj = 25°C
85
Tj = 125°C
160
Tj = 25°C
390
Tj = 125°C
2100
1.8
V
ns
nC
0.45
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°C/W
2–8
APTM50AM38STG – Rev 7 October, 2013
Symbol
VRRM
IRM
IF
APTM50AM38STG
Parallel diode ratings and characteristics
Symbol
VRRM
IRM
IF
VF
Characteristic
Test Conditions
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=600V
DC Forward Current
IF = 90A
IF = 180A
Diode Forward Voltage
IF = 90A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
RthJC
IF = 90A
VR = 400V
di/dt = 600A/µs
Min
600
Typ
Max
250
Tj = 125°C
90
1.8
2
1.3
Tj = 25°C
25
Tj = 125°C
160
Tj = 25°C
Tj = 125°C
105
1440
Tc = 90°C
Unit
V
µA
A
2.2
V
ns
Junction to Case Thermal Resistance
nC
0.45
°C/W
Thermal and package characteristics
Symbol
VISOL
TJ
TJOP
TSTG
TC
Torque
Wt
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Recommended junction temperature under switching conditions
Storage Temperature Range
Operating Case Temperature
Mounting torque
To Heatsink
M5
Package Weight
Min
4000
-40
-40
-40
-40
2.5
Max
150
TJmax -25
125
100
4.7
160
Unit
V
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com).
Characteristic
Resistance @ 25°C
Min
T25 = 298.15 K
TC=100°C
RT =
R 25
Typ
50
5
3952
4
Max
Unit
kΩ
%
K
%
T: Thermistor temperature
⎡
⎛ 1 1 ⎞⎤ RT: Thermistor value at T
− ⎟⎟⎥
exp⎢ B 25 / 85 ⎜⎜
⎝ T25 T ⎠⎦⎥
⎣⎢
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3–8
APTM50AM38STG – Rev 7 October, 2013
Symbol
R25
∆R25/R25
B25/85
∆B/B
APTM50AM38STG
SP4 Package outline (dimensions in mm)
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4–8
APTM50AM38STG – Rev 7 October, 2013
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
APTM50AM38STG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.2
0.18
D = 0.9
0.16
0.7
0.14
0.12
0.5
0.1
0.08
0.3
0.06
0.1
0.04
Single Pulse
0.02
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Transfert Characteristics
Low Voltage Output Characteristics
250
8V
VGS=10&15V
250
7.5V
200
7V
150
6.5V
100
6V
50
VDS > I D(on)xR DS(on)MAX
250µs pulse test @ < 0.5 duty cycle
200
150
100
TJ=25°C
50
TJ=125°C
5.5V
0
0
5
10
15
20
0
25
0
VDS, Drain to Source Voltage (V)
VGS=10V
1.10
1.05
VGS=20V
1.00
0.95
0.90
0.85
0.80
0
50
100
150
3
4
5
6
7
8
DC Drain Current vs Case Temperature
100
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
RDS(on) vs Drain Current
Normalized to
VGS=10V @
2
VGS , Gate to Source Voltage (V)
1.20
1.15
1
200
ID, Drain Current (A)
80
60
40
20
0
25
50
75
100
125
150
T C, Case Temperature (°C)
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5–8
APTM50AM38STG – Rev 7 October, 2013
300
ID, Drain Current (A)
ID, Drain Current (A)
350
Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
25
50
75
100
125
150
RDS(on), Drain to Source ON resistance
(Normalized)
ON resistance vs Temperature
2.5
VGS=10V
I D=45A
2.0
1.5
1.0
0.5
25
Threshold Voltage vs Temperature
100
125
150
Maximum Safe Operating Area
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
75
1000
1.0
0.9
0.8
0.7
0.6
25
50
75
100
125
100µs
limited by RDSon
100
limited by RDSon
10
1
VGS , Gate to Source Voltage (V)
Ciss
Coss
1000
Crss
100
10
20
30
10
100
1000
VDS , Drain to Source Voltage (V)
10000
10
10ms
1
150
Capacitance vs Drain to Source Voltage
100000
0
1ms
Single pulse
TJ =150°C
TC=25°C
TC, Case Temperature (°C)
C, Capacitance (pF)
50
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
40
50
VDS , Drain to Source Voltage (V)
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Gate Charge vs Gate to Source Voltage
14
VDS=100V
ID=90A
12
TJ =25°C
VDS=250V
10
VDS=400V
8
6
4
2
0
0
40
80 120 160 200 240 280 320
Gate Charge (nC)
6–8
APTM50AM38STG – Rev 7 October, 2013
BVDSS , Drain to Source Breakdown Voltage
(Normalized)
APTM50AM38STG
APTM50AM38STG
Delay Times vs Current
Rise and Fall times vs Current
120
td(off)
80
40
VDS=333V
RG=2Ω
TJ=125°C
L=100µH
td(on)
20
80
60
40
tr
20
0
0
20
40
60
80
100
120
140
20
40
60
ID, Drain Current (A)
VDS=333V
RG=2Ω
TJ=125°C
L=100µH
4
3
120
140
Switching Energy vs Gate Resistance
Eon
Eoff
2
100
8
Switching Energy (mJ)
Switching Energy (mJ)
5
80
ID, Drain Current (A)
Switching Energy vs Current
1
VDS=333V
ID=90A
TJ=125°C
L=100µH
7
6
5
Eoff
4
Eon
3
2
Eoff
1
0
0
20
40
60
80
100
120
0
140
ID, Drain Current (A)
Operating Frequency vs Drain Current
IDR, Reverse Drain Current (A)
350
VDS=333V
D=50%
RG=2Ω
TJ=125°C
TC=75°C
ZVS
300
250
200
150
ZCS
100
Hard
switching
50
0
20
30
40
50
60
5
10
15
20
25
Gate Resistance (Ohms)
400
Frequency (kHz)
tf
70
80
1000
Source to Drain Diode Forward Voltage
TJ=150°C
100
10
TJ=25°C
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
ID, Drain Current (A)
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APTM50AM38STG – Rev 7 October, 2013
60
VDS=333V
RG=2Ω
TJ=125°C
L=100µH
100
tr and tf (ns)
td(on) and td(off) (ns)
100
APTM50AM38STG
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PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted,
transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the
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authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property
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inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi
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faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims
any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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APTM50AM38STG – Rev 7 October, 2013
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
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