APTM100A23STG Phase leg Series & parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 230mΩ typ @ Tj = 25°C ID = 36A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies NTC2 VBUS Q1 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration G1 OUT S1 Q2 G2 0/VBU S S2 NTC1 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1000 36 27 144 ±30 270 694 18 50 2500 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–8 APTM100A23STG – Rev 5 October, 2013 Symbol VDSS APTM100A23STG Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min VGS = 0V,VDS= 1000V Tj = 25°C VGS = 0V,VDS= 800V Tj = 125°C VGS = 10V, ID = 18A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V Typ 230 3 Max 200 1000 270 5 ±150 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 25V f = 1MHz Min Typ 8700 1430 240 pF 308 VGS = 10V VBus = 500V ID = 36A 52 nC 194 10 Inductive switching @ 125°C VGS = 15V VBus = 667V ID = 36A RG = 2.5Ω 12 ns 121 35 Inductive switching @ 25°C VGS = 15V, VBus = 667V ID = 36A, RG = 2.5Ω 1278 Inductive switching @ 125°C VGS = 15V, VBus = 667V ID = 36A, RG = 2.5Ω 2092 µJ 760 µJ 902 0.18 °C/W Max Unit V µA A Series diode ratings and characteristics VF Characteristic Test Conditions Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current VR = 1000V DC Forward Current IF = 90A I Diode Forward Voltage F = 180A IF = 90A trr Reverse Recovery Time Qrr Reverse Recovery Charge RthJC IF = 90A VR = 667V di/dt = 400A/µs Junction to Case Thermal Resistance Min 1000 Typ 500 Tc = 65°C Tj = 125°C 90 1.9 2.2 1.7 Tj = 25°C 290 Tj = 125°C 390 Tj = 25°C 2010 Tj = 125°C 7050 2.3 V ns nC 0.45 www.microsemi.com °C/W 2–8 APTM100A23STG – Rev 5 October, 2013 Symbol VRRM IRM IF APTM100A23STG Parallel diode ratings and characteristics Symbol VRRM IRM IF VF Characteristic Test Conditions Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current VR=1000V DC Forward Current Tc = 80°C IF = 80A IF = 140A Diode Forward Voltage IF = 80A Tj = 125°C trr Reverse Recovery Time Qrr Reverse Recovery Charge RthJC IF = 80A VR = 667V di/dt = 400A/µs Min 1000 Typ Max 150 80 2.5 3.1 2 Tj = 25°C 250 Tj = 125°C Tj = 25°C Tj = 125°C 315 830 3300 Junction to Case Thermal Resistance Unit V µA A 3.5 V ns nC 0.65 °C/W Max Unit V Thermal and package characteristics Symbol VISOL TJ TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque To Heatsink M5 Package Weight Min 4000 -40 -40 -40 2.5 Typ Min Typ 50 5 3952 4 150 125 100 4.7 160 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com). Characteristic Resistance @ 25°C T25 = 298.15 K TC=100°C RT = R 25 Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T − ⎟⎟⎥ exp⎢ B 25 / 85 ⎜⎜ ⎢⎣ ⎝ T25 T ⎠⎥⎦ www.microsemi.com 3–8 APTM100A23STG – Rev 5 October, 2013 Symbol R25 ∆R25/R25 B25/85 ∆B/B APTM100A23STG SP4 Package outline (dimensions in mm) www.microsemi.com 4–8 APTM100A23STG – Rev 5 October, 2013 See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTM100A23STG Thermal Impedance (°C/W) Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.2 0.18 0.9 0.16 0.7 0.14 0.12 0.5 0.1 0.08 0.3 0.06 Single Pulse 0.04 0.1 0.05 0.02 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 160 VDS > ID (on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 140 100 VGS=15&8V 7V 80 6.5V 60 6V 40 5.5V 20 ID, Drain Current (A) 120 TJ=25°C 100 80 60 TJ=125°C 40 20 5V 0 0 5 10 15 20 25 0 30 0 1.2 VGS=10V 1.1 VGS=20V 1 5 6 7 8 9 35 30 25 20 15 10 0.9 40 4 40 Normalized to VGS=10V @ 18A 20 3 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.3 0 2 VGS , Gate to Source Voltage (V) ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance VDS, Drain to Source Voltage (V) 1 60 80 100 ID, Drain Current (A) 5 0 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 5–8 APTM100A23STG – Rev 5 October, 2013 ID, Drain Current (A) 120 Breakdown Voltage vs Temperature 1.15 1.10 1.05 1.00 0.95 25 50 75 100 125 150 RDS (on), Drain to Source ON resistance (Normalized) ON resistance vs Temperature 2.5 VGS=10V I D=18A 2.0 1.5 1.0 25 100 125 150 Maximum Safe Operating Area Threshold Voltage vs Temperature 1000 ID, Drain Current (A) VGS (TH), Threshold Voltage (Normalized) 75 TJ, Junction Temperature (°C) T J, Junction Temperature (°C) 1.0 0.9 0.8 0.7 0.6 100µs 100 limited by R DSon 1ms Single pulse T J =150°C T C=25°C 10 10ms 1 25 50 75 100 125 150 1 Ciss 10000 Coss 1000 Crss 100 VGS , Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 10 0 10 20 30 10 100 1000 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) 50 40 50 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 VDS=200V ID=36A 12 TJ =25°C VDS=500V 10 8 VDS=800V 6 4 2 0 0 50 100 150 200 250 300 350 400 Gate Charge (nC) www.microsemi.com 6–8 APTM100A23STG – Rev 5 October, 2013 BVDSS , Drain to Source Breakdown Voltage (Normalized) APTM100A23STG APTM100A23STG Delay Times vs Current Rise and Fall times vs Current 60 160 td(off) VDS=667V RG=2.5Ω TJ=125°C L=100µH 50 120 100 VDS=667V RG=2.5Ω TJ=125°C L=100µH 80 60 40 tr and tf (ns) 30 tr 20 40 td(on) 20 10 0 0 10 20 30 40 50 60 70 80 10 20 30 40 50 60 ID, Drain Current (A) ID, Drain Current (A) 80 5 VDS=667V RG=2.5Ω TJ=125°C L=100µH 3 Eon 2 Switching Energy (mJ) Switching Energy (mJ) 70 Switching Energy vs Gate Resistance Switching Energy vs Current 4 Eoff 1 VDS=667V ID=36A TJ=125°C L=100µH 4 3 Eoff Eon 2 Eoff 1 0 0 10 20 30 40 50 60 ID, Drain Current (A) 70 80 0 3 5 8 10 13 15 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 250 ZVS 200 ZCS 150 IDR, Reverse Drain Current (A) 300 Frequency (kHz) tf VDS=667V D=50% RG=2.5Ω TJ=125°C TC=75°C 100 Hard switching 50 100 0 14 18 22 26 30 ID, Drain Current (A) 34 TJ=150°C TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) www.microsemi.com 7–8 APTM100A23STG – Rev 5 October, 2013 td(on) and td(off) (ns) 140 APTM100A23STG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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