APTM100A23STG-Rev5.pdf

APTM100A23STG
Phase leg
Series & parallel diodes
MOSFET Power Module
VDSS = 1000V
RDSon = 230mΩ typ @ Tj = 25°C
ID = 36A @ Tc = 25°C
Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
NTC2
VBUS
Q1
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
G1
OUT
S1
Q2
G2
0/VBU S
S2
NTC1
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1000
36
27
144
±30
270
694
18
50
2500
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–8
APTM100A23STG – Rev 5 October, 2013
Symbol
VDSS
APTM100A23STG
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min
VGS = 0V,VDS= 1000V
Tj = 25°C
VGS = 0V,VDS= 800V
Tj = 125°C
VGS = 10V, ID = 18A
VGS = VDS, ID = 5mA
VGS = ±30 V, VDS = 0V
Typ
230
3
Max
200
1000
270
5
±150
Unit
Max
Unit
µA
mΩ
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
RthJC
Junction to Case Thermal Resistance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
Typ
8700
1430
240
pF
308
VGS = 10V
VBus = 500V
ID = 36A
52
nC
194
10
Inductive switching @ 125°C
VGS = 15V
VBus = 667V
ID = 36A
RG = 2.5Ω
12
ns
121
35
Inductive switching @ 25°C
VGS = 15V, VBus = 667V
ID = 36A, RG = 2.5Ω
1278
Inductive switching @ 125°C
VGS = 15V, VBus = 667V
ID = 36A, RG = 2.5Ω
2092
µJ
760
µJ
902
0.18
°C/W
Max
Unit
V
µA
A
Series diode ratings and characteristics
VF
Characteristic
Test Conditions
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR = 1000V
DC Forward Current
IF = 90A
I
Diode Forward Voltage
F = 180A
IF = 90A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
RthJC
IF = 90A
VR = 667V
di/dt = 400A/µs
Junction to Case Thermal Resistance
Min
1000
Typ
500
Tc = 65°C
Tj = 125°C
90
1.9
2.2
1.7
Tj = 25°C
290
Tj = 125°C
390
Tj = 25°C
2010
Tj = 125°C
7050
2.3
V
ns
nC
0.45
www.microsemi.com
°C/W
2–8
APTM100A23STG – Rev 5 October, 2013
Symbol
VRRM
IRM
IF
APTM100A23STG
Parallel diode ratings and characteristics
Symbol
VRRM
IRM
IF
VF
Characteristic
Test Conditions
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR=1000V
DC Forward Current
Tc = 80°C
IF = 80A
IF = 140A
Diode Forward Voltage
IF = 80A
Tj = 125°C
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
RthJC
IF = 80A
VR = 667V
di/dt = 400A/µs
Min
1000
Typ
Max
150
80
2.5
3.1
2
Tj = 25°C
250
Tj = 125°C
Tj = 25°C
Tj = 125°C
315
830
3300
Junction to Case Thermal Resistance
Unit
V
µA
A
3.5
V
ns
nC
0.65
°C/W
Max
Unit
V
Thermal and package characteristics
Symbol
VISOL
TJ
TSTG
TC
Torque
Wt
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
To Heatsink
M5
Package Weight
Min
4000
-40
-40
-40
2.5
Typ
Min
Typ
50
5
3952
4
150
125
100
4.7
160
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com).
Characteristic
Resistance @ 25°C
T25 = 298.15 K
TC=100°C
RT =
R 25
Max
Unit
kΩ
%
K
%
T: Thermistor temperature
⎡
⎛ 1 1 ⎞⎤ RT: Thermistor value at T
− ⎟⎟⎥
exp⎢ B 25 / 85 ⎜⎜
⎢⎣
⎝ T25 T ⎠⎥⎦
www.microsemi.com
3–8
APTM100A23STG – Rev 5 October, 2013
Symbol
R25
∆R25/R25
B25/85
∆B/B
APTM100A23STG
SP4 Package outline (dimensions in mm)
www.microsemi.com
4–8
APTM100A23STG – Rev 5 October, 2013
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
APTM100A23STG
Thermal Impedance (°C/W)
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.2
0.18
0.9
0.16
0.7
0.14
0.12
0.5
0.1
0.08
0.3
0.06
Single Pulse
0.04
0.1
0.05
0.02
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Transfert Characteristics
Low Voltage Output Characteristics
160
VDS > ID (on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
140
100
VGS=15&8V
7V
80
6.5V
60
6V
40
5.5V
20
ID, Drain Current (A)
120
TJ=25°C
100
80
60
TJ=125°C
40
20
5V
0
0
5
10
15
20
25
0
30
0
1.2
VGS=10V
1.1
VGS=20V
1
5
6
7
8
9
35
30
25
20
15
10
0.9
40
4
40
Normalized to
VGS=10V @ 18A
20
3
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.3
0
2
VGS , Gate to Source Voltage (V)
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
VDS, Drain to Source Voltage (V)
1
60
80
100
ID, Drain Current (A)
5
0
25
50
75
100
125
150
TC, Case Temperature (°C)
www.microsemi.com
5–8
APTM100A23STG – Rev 5 October, 2013
ID, Drain Current (A)
120
Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
0.95
25
50
75
100
125
150
RDS (on), Drain to Source ON resistance
(Normalized)
ON resistance vs Temperature
2.5
VGS=10V
I D=18A
2.0
1.5
1.0
25
100
125
150
Maximum Safe Operating Area
Threshold Voltage vs Temperature
1000
ID, Drain Current (A)
VGS (TH), Threshold Voltage
(Normalized)
75
TJ, Junction Temperature (°C)
T J, Junction Temperature (°C)
1.0
0.9
0.8
0.7
0.6
100µs
100
limited by
R DSon
1ms
Single pulse
T J =150°C
T C=25°C
10
10ms
1
25
50
75
100
125
150
1
Ciss
10000
Coss
1000
Crss
100
VGS , Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
10
0
10
20
30
10
100
1000
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
C, Capacitance (pF)
50
40
50
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
VDS=200V
ID=36A
12
TJ =25°C
VDS=500V
10
8
VDS=800V
6
4
2
0
0
50 100 150 200 250 300 350 400
Gate Charge (nC)
www.microsemi.com
6–8
APTM100A23STG – Rev 5 October, 2013
BVDSS , Drain to Source Breakdown Voltage
(Normalized)
APTM100A23STG
APTM100A23STG
Delay Times vs Current
Rise and Fall times vs Current
60
160
td(off)
VDS=667V
RG=2.5Ω
TJ=125°C
L=100µH
50
120
100
VDS=667V
RG=2.5Ω
TJ=125°C
L=100µH
80
60
40
tr and tf (ns)
30
tr
20
40
td(on)
20
10
0
0
10
20
30
40
50
60
70
80
10
20
30
40
50
60
ID, Drain Current (A)
ID, Drain Current (A)
80
5
VDS=667V
RG=2.5Ω
TJ=125°C
L=100µH
3
Eon
2
Switching Energy (mJ)
Switching Energy (mJ)
70
Switching Energy vs Gate Resistance
Switching Energy vs Current
4
Eoff
1
VDS=667V
ID=36A
TJ=125°C
L=100µH
4
3
Eoff
Eon
2
Eoff
1
0
0
10
20
30 40 50 60
ID, Drain Current (A)
70
80
0
3
5
8
10
13
15
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
250
ZVS
200
ZCS
150
IDR, Reverse Drain Current (A)
300
Frequency (kHz)
tf
VDS=667V
D=50%
RG=2.5Ω
TJ=125°C
TC=75°C
100
Hard
switching
50
100
0
14
18
22
26
30
ID, Drain Current (A)
34
TJ=150°C
TJ=25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
www.microsemi.com
7–8
APTM100A23STG – Rev 5 October, 2013
td(on) and td(off) (ns)
140
APTM100A23STG
DISCLAIMER
The information contained in the document (unless it is publicly available on the Web without access restrictions) is
PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted,
transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the
recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement
will also apply. This document and the information contained herein may not be modified, by any person other than
authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property
right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication,
inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi
product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all
faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims
any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
www.microsemi.com
8–8
APTM100A23STG – Rev 5 October, 2013
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
Similar pages