APTM50HM65FTG Full - Bridge MOSFET Power Module Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies VBUS Q1 Q3 Features Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration G3 G1 S1 OUT1 S3 OUT2 Q2 Q4 G2 G4 S2 S4 NTC1 0/VBU S VDSS = 500V RDSon = 65m typ @ Tj = 25°C ID = 51A @ Tc = 25°C NTC2 Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 51 38 204 ±30 78 390 51 50 3000 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM50HM65FTG – Rev 3 October, 2012 Symbol VDSS APTM50HM65FTG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 25.5A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V 65 3 Max 100 500 78 5 ±100 Unit Max Unit µA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge 140 Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 250V ID = 51A Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 51A RG = 3 21 Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Typ 7000 1400 90 pF nC 40 70 38 ns 75 93 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 51A, RG = 3Ω 1035 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 51A, RG = 3Ω 1556 µJ 845 µJ 1013 Source - Drain diode ratings and characteristics trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Typ Tj = 25°C Max 51 38 1.3 15 270 Tj = 125°C 540 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 51A IS = - 51A VR = 333V diS/dt = 100A/µs Tj = 25°C 2.6 Tj = 125°C 9.6 Unit A V V/ns ns µC dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 51A di/dt 700A/µs VR VDSS Tj 150°C www.microsemi.com 2–7 APTM50HM65FTG – Rev 3 October, 2012 Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery APTM50HM65FTG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 -40 -40 -40 2.5 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 Typ Max 0.32 150 125 100 4.7 160 Unit °C/W V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT Min Typ 50 3952 Max Unit k K R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T25 T See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3–7 APTM50HM65FTG – Rev 3 October, 2012 SP4 Package outline (dimensions in mm) APTM50HM65FTG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics ID, Drain Current (A) VGS=10&15V 160 7V 120 6.5V 80 6V 40 5.5V 0 5 10 15 20 VDS, Drain to Source Voltage (V) 100 75 TJ=25°C 50 25 TJ=125°C TJ=-55°C 0 0 25 2 4 6 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.1 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 125 5V 0 60 Normalized to VGS=10V @ 25.5A 1.05 ID, DC Drain Current (A) VGS=10V 1 VGS=20V 0.95 50 40 30 20 10 0.9 0 0 10 20 30 40 50 60 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 4–7 APTM50HM65FTG – Rev 3 October, 2012 ID, Drain Current (A) 8V RDS(on) Drain to Source ON Resistance Transfert Characteristics 150 200 APTM50HM65FTG 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature RDS(on), Drain to Source ON resistance (Normalized) 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 25 50 75 100 125 150 Maximum Safe Operating Area 1000 1.2 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 1.0 0.9 0.8 0.7 100 us limited by RDSon 100 1 ms 10 10 ms Single pulse TJ=150°C TC=25°C 1 100 ms 0.1 0.6 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Ciss 10000 Coss 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) VGS=10V ID= 25.5A 14 VDS=100V ID=51A TJ=25°C 12 VDS=250V 10 VDS=400V 8 6 4 2 0 50 0 25 50 75 100 125 150 175 Gate Charge (nC) www.microsemi.com 5–7 APTM50HM65FTG – Rev 3 October, 2012 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature APTM50HM65FTG Rise and Fall times vs Current 160 70 140 td(off) VDS=333V RG=3Ω TJ=125°C L=100µH 60 50 40 30 VDS=333V RG=3Ω TJ=125°C L=100µH 120 tr and tf (ns) td(on) 100 80 tr 60 40 20 20 10 0 10 20 30 40 50 60 70 10 80 20 ID, Drain Current (A) 70 80 5 VDS=333V RG=3Ω TJ=125°C L=100µH 2.5 2 Switching Energy (mJ) Switching Energy (mJ) 30 40 50 60 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 3 Eon 1.5 Eoff 1 0.5 VDS=333V ID=51A TJ=125°C L=100µH 4 3 Eoff Eon 2 Eoff 1 0 0 10 20 30 40 50 60 70 0 80 5 10 15 20 25 30 35 40 45 ID, Drain Current (A) Gate Resistance (Ohms) Operating Frequency vs Drain Current 400 350 ZVS 300 250 IDR, Reverse Drain Current (A) 450 Frequency (kHz) tf VDS=333V D=50% RG=3Ω TJ=125°C TC=75°C 200 ZCS 150 100 hard switching 50 0 10 15 20 25 30 35 ID, Drain Current (A) 40 Source to Drain Diode Forward Voltage 1000 100 TJ=150°C TJ=25°C 10 1 45 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD, Source to Drain Voltage (V) www.microsemi.com 6–7 APTM50HM65FTG – Rev 3 October, 2012 td(on) and td(off) (ns) Delay Times vs Current 80 APTM50HM65FTG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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