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APTC80A15SCTG
VDSS = 800V
RDSon = 150mΩ max @ Tj = 25°C
ID = 28A @ Tc = 25°C
Phase leg Serie & SiC parallel diodes
Super Junction MOSFET Power Module
NTC2
VBUS
Q1
Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Features
• CoolMOS™
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
G1
OUT
S1
Q2
•
Parallel SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
•
•
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
G2
0/VBU S
S2
NTC1
•
•
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
800
28
21
112
±30
150
277
17
0.5
670
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–9
APTC80A15SCTG – Rev 4 October, 2013
Symbol
VDSS
APTC80A15SCTG
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
VGS = 0V,VDS = 800V
VGS = 0V,VDS = 800V
Min
Typ
Tj = 25°C
Tj = 125°C
VGS = 10V, ID = 14A
VGS = VDS, ID = 2mA
VGS = ±20 V, VDS = 0V
2.1
3
Min
Typ
4507
2092
108
Max
50
375
150
3.9
±150
Unit
Max
Unit
µA
mΩ
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
RthJC
Junction to Case Thermal Resistance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
pF
180
VGS = 10V
VBus = 400V
ID = 28A
22
nC
90
Inductive switching @125°C
VGS = 15V
VBus = 533V
ID = 28A
RG = 2.5Ω
Inductive switching @ 25°C
VGS = 15V, VBus = 533V
ID = 28A, RG = 2.5Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 533V
ID = 28A, RG = 2.5Ω
10
13
83
ns
35
291
µJ
278
510
µJ
342
0.45
°C/W
Series diode ratings and characteristics
IF
VF
DC Forward Current
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
RthJC
Min
1000
Tc = 80°C
IF = 60A
IF = 120A
IF = 60A
IF = 60A
VR = 667V
di/dt = 400A/µs
Junction to Case Thermal Resistance
Typ
Tj = 125°C
60
1.9
2.2
1.7
Tj = 25°C
290
Tj = 125°C
390
Tj = 25°C
1.34
Tj = 125°C
4.7
Max
Unit
V
250
µA
A
2.3
V
ns
µC
0.65
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°C/W
2–9
APTC80A15SCTG – Rev 4 October, 2013
Symbol Characteristic
Test Conditions
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
Maximum Reverse Leakage Current
VR = 1000V
APTC80A15SCTG
Parallel diode ratings and characteristics
Symbol Characteristic
Test Conditions
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
Maximum Reverse Leakage Current
VR=1200V
Min
1200
Tj = 25°C
Tj = 175°C
Tc = 100°C
Tj = 25°C
Tj = 175°C
Typ
Max
64
112
20
1.6
2..3
400
2000
IF
DC Forward Current
VF
Diode Forward Voltage
IF = 20A
QC
Total Capacitive Charge
IF = 20A, VR = 1200V
di/dt =1000A/µs
160
Q
Total Capacitance
f = 1MHz, VR = 200V
192
f = 1MHz, VR = 400V
138
RthJC
Junction to Case Thermal Resistance
Unit
V
µA
A
1.8
V
nC
pF
1
°C/W
Thermal and package characteristics
Symbol
VISOL
TJ
TJOP
TSTG
TC
Torque
Wt
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Recommended junction temperature under switching conditions
Storage Temperature Range
Operating Case Temperature
Mounting torque
To Heatsink
M5
Package Weight
Min
4000
-40
-40
-40
-40
2.5
Max
Unit
V
150
TJmax -25
125
100
4.7
160
N.m
g
Typ
50
3952
Unit
kΩ
K
°C
Temperature sensor NTC (see application note APT0406 on www.microsemi.com).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
Max
R25
T: Thermistor temperature
⎡
⎛ 1
1 ⎞⎤ RT: Thermistor value at T
exp ⎢ B25 / 85 ⎜⎜
− ⎟⎟⎥
⎝ T25 T ⎠⎦
⎣
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3–9
APTC80A15SCTG – Rev 4 October, 2013
RT =
Min
APTC80A15SCTG
SP4 Package outline (dimensions in mm)
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4–9
APTC80A15SCTG – Rev 4 October, 2013
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
APTC80A15SCTG
Typical CoolMOS Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.5
0.45
0.4
0.9
0.7
0.35
0.3
0.25
0.2
0.15
0.1
0.5
0.3
0.1
0.05
0
0.00001
Single Pulse
0.05
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Transfert Characteristics
Low Voltage Output Characteristics
100
VGS=15&10V
6.5V
60
50
6V
40
5.5V
30
5V
20
4.5V
10
VDS > I D(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty
80
60
TJ=25°C
40
20
TJ=125°C
4V
0
0
0
5
10
15
20
0
25
RDS(on) vs Drain Current
Normalized to
VGS=10V @ 14A
VGS=10V
1.2
VGS=20V
1.1
3
4
5
6
7
8
DC Drain Current vs Case Temperature
30
1.4
1.3
2
VGS , Gate to Source Voltage (V)
ID, DC Drain Current (A)
RDS (on) Drain to Source ON Resistance
VDS , Drain to Source Voltage (V)
1
1
0.9
25
20
15
10
5
0
0.8
0
10
20
30
40
50
60
25
50
75
100
125
150
TC, Case Temperature (°C)
ID, Drain Current (A)
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APTC80A15SCTG – Rev 4 October, 2013
ID, Drain Current (A)
70
ID, Drain Current (A)
80
Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
25
50
75
100
125
150
ON resistance vs Temperature
RDS (on), Drain to Source ON resistance
(Normalized)
3.0
2.5
2.0
1.5
1.0
0.5
25
TJ, Junction Temperature (°C)
75
100
125
150
Maximum Safe Operating Area
Threshold Voltage vs Temperature
1000
ID, Drain Current (A)
VGS (TH), Threshold Voltage
(Normalized)
50
TJ, Junction Temperature (°C)
1.1
1.0
0.9
0.8
100
50
75
100
125
1ms
1
1000
Coss
100
Crss
VGS , Gate to Source Voltage (V)
Ciss
10
20
30
40
10
100
1000
VDS , Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
I D=28A
TJ=2 5 °C
12
VDS=160V
10
10
0
100ms
0
TC, Case Temperature (°C)
10000
100µs
Single pulse
TJ =150°C
TC=25°C
1
150
Capacitance vs Drain to Source Voltage
100000
limited by
R DSon
10
0.7
25
C, Capacitance (pF)
VGS=10V
I D= 14A
50
VDS=400V
8
6
VDS=640V
4
2
0
0
40
80
120
160
200
Gate Charge (nC)
VDS , Drain to Source Voltage (V)
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6–9
APTC80A15SCTG – Rev 4 October, 2013
BVDSS , Drain to Source Breakdown Voltage
(Normalized)
APTC80A15SCTG
APTC80A15SCTG
Delay Times vs Current
Rise and Fall times vs Current
50
100
tf
40
80
VDS=533V
R G =2.5Ω
TJ=1 25 °C
L=100µH
60
t r and t f (ns)
40
30
20
td(on)
20
VDS=533V
R G =2.5Ω
TJ=1 25 °C
L=100µH
10
0
0
10
20
30
40
10
50
20
ID, Drain Current (A)
Switching Energy vs Current
50
Switching Energy vs Gate Resistance
Eon
Switching Energy (µJ)
Eon and Eoff (µJ)
40
2500
VDS=533V
R G=2.5Ω
TJ=1 25 °C
L=100µH
750
30
ID, Drain Current (A)
900
600
450
Eoff
300
150
VDS=533V
I D=28A
TJ=1 25 °C
L=100µH
2000
Eoff
1500
1000
Eon
500
Eoff
0
0
10
20
30
40
ID, Drain Current (A)
300
ZVS
VDS=533V
D=50%
R G=2.5Ω
TJ=1 25 °C
TJ=7 5 °C
150
100
50
ZCS
Hard
Switching
0
5
10
15
20
10
15
20
25
Source to Drain Diode Forward Voltage
1000
IDR, Reverse Drain Current (A)
350
200
5
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
250
0
50
400
Frequency (kHz)
tr
100
25
ID, Drain Current (A)
TJ=150°C
10
TJ=25°C
1
0.2
0.6
1
1.4
1.8
VSD, Source to Drain Voltage (V)
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7–9
APTC80A15SCTG – Rev 4 October, 2013
td(on) and td(off) (ns)
td(off)
APTC80A15SCTG
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1.2
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.1
0.2
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Reverse Characteristics
Forward Characteristics
30
600
TJ=75°C
20
15
TJ=125°C
10
TJ=175°C
5
IR Reverse Current (µA)
IF Forward Current (A)
TJ=25°C
25
0
0
0.5
1
1.5
2
2.5
3
3.5
VF Forward Voltage (V)
450
300
TJ=75°C
TJ=125°C
150
TJ=175°C
0
400
600
TJ=25°C
800 1000 1200 1400 1600
VR Reverse Voltage (V)
Capacitance vs.Reverse Voltage
C, Capacitance (pF)
1200
1000
800
600
400
200
1
10
100
VR Reverse Voltage
1000
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
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8–9
APTC80A15SCTG – Rev 4 October, 2013
0
APTC80A15SCTG
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Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
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Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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APTC80A15SCTG – Rev 4 October, 2013
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.