APTM100H18FG Full - Bridge MOSFET Power Module VDSS = 1000V RDSon = 180m typ @ Tj = 25°C ID = 43A @ Tc = 25°C Application VBUS Q1 Q3 S1 OUT2 G3 OUT1 G1 S3 Q2 Q4 Features G4 G2 S4 S2 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control 0/VBUS Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1000 43 33 172 ±30 210 780 25 50 3000 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM100H18FG– Rev 2 October, 2012 Symbol VDSS APTM100H18FG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min VGS = 0V,VDS = 1000V Tj = 25°C VGS = 0V,VDS = 800V Tj = 125°C VGS = 10V, ID = 21.5A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V Typ 180 3 Max 200 1000 210 5 ±150 Unit Max Unit µA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 500V ID = 43A Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Typ 10.4 1.76 0.32 nF 372 nC 48 244 18 Inductive switching @ 125°C VGS = 15V VBus = 670V ID = 43A RG = 2.5 12 ns 155 40 Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 43A, RG = 2.5Ω 1800 Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 43A, RG = 2.5Ω 2846 µJ 1246 µJ 1558 Source - Drain diode ratings and characteristics trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Typ Tj = 25°C Max 43 33 1.3 18 320 Tj = 125°C 650 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 43A IS = - 43A VR = 670V diS/dt = 200A/µs Tj = 25°C 7.2 Tj = 125°C 19.5 Unit A V V/ns ns µC dv/dt numbers reflect the limitations of the circuit rather than the device itself. di/dt 700A/µs VR VDSS Tj 150°C IS - 43A www.microsemi.com 2–7 APTM100H18FG– Rev 2 October, 2012 Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery APTM100H18FG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Torque Mounting torque 4000 -40 -40 -40 3 2 Wt Package Weight Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink For terminals M6 M5 Typ Max 0.16 150 125 100 5 3.5 300 Unit °C/W V °C N.m g SP6 Package outline (dimensions in mm) www.microsemi.com 3–7 APTM100H18FG– Rev 2 October, 2012 See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM100H18FG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.18 0.16 0.9 0.14 0.7 0.12 0.1 0.5 0.08 0.3 0.06 0.04 0.1 0.05 0.02 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 160 VGS=15, 10&8V 100 7V 80 6.5V 60 6V 40 5.5V 20 0 5 10 15 20 25 120 100 80 60 TJ=25°C 40 20 5V 0 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 140 ID, Drain Current (A) TJ=125°C 30 0 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance VGS=10V 1.1 VGS=20V 1 3 4 5 6 7 8 9 45 Normalized to VGS=10V @ 21.5A 1.2 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.3 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 1.4 TJ=-55°C 0 0.9 0.8 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 4–7 APTM100H18FG– Rev 2 October, 2012 ID, Drain Current (A) 120 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=21.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 100µs limited by RDSon 100 1ms 10 Single pulse TJ=150°C TC=25°C 10ms 1 0.6 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage Ciss 10000 Coss 1000 Crss 100 0 10 20 30 40 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 50 VDS, Drain to Source Voltage (V) www.microsemi.com 14 ID=43A TJ=25°C 12 VDS=200V VDS=500V 10 VDS=800V 8 6 4 2 0 0 100 200 300 400 500 Gate Charge (nC) 5–7 APTM100H18FG– Rev 2 October, 2012 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM100H18FG APTM100H18FG Delay Times vs Current Rise and Fall times vs Current 80 td(off) 160 VDS=670V RG=2.5Ω TJ=125°C L=100µH 120 80 0 40 tr 0 10 30 50 70 90 10 ID, Drain Current (A) Eon VDS=670V RG=2.5Ω TJ=125°C L=100µH Eoff 2 1 0 5 4 30 50 70 2 Eoff 1 90 0 5 10 15 20 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 ZCS ZVS 150 VDS=670V D=50% RG=2.5Ω TJ=125°C Tc=75°C Hard switching 0 10 15 20 25 30 35 ID, Drain Current (A) 40 www.microsemi.com 100 TJ=150°C TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) 6–7 APTM100H18FG– Rev 2 October, 2012 200 IDR, Reverse Drain Current (A) 250 Frequency (kHz) Eon 3 ID, Drain Current (A) 50 Eoff VDS=670V ID=43A TJ=125°C L=100µH 6 0 10 100 90 7 Switching Energy (mJ) Switching Energy (mJ) 3 30 50 70 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 5 4 tf 20 td(on) 40 VDS=670V RG=2.5Ω TJ=125°C L=100µH 60 tr and tf (ns) td(on) and td(off) (ns) 200 APTM100H18FG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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