APTM100UM60FAG Single Switch MOSFET Power Module Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control SK S D Features Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration AlN substrate for improved thermal performance DK G VDSS = 1000V RDSon = 60m typ @ Tj = 25°C ID = 129A @ Tc = 25°C Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1000 129 97 516 ±30 70 2272 25 50 3000 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM100UM60FAG Rev 3 October, 2012 Symbol VDSS APTM100UM60FAG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min VGS = 0V,VDS = 1000V Tj = 25°C VGS = 0V,VDS = 800V Tj = 125°C VGS = 10V, ID = 64.5A VGS = VDS, ID = 15mA VGS = ±30 V, VDS = 0V Typ 60 3 Max 600 3 70 5 ±500 Unit Max Unit µA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 500V ID = 129A Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Typ 31.1 5.28 0.96 nF 1116 nC 144 732 18 Inductive switching @ 125°C VGS = 15V VBus = 670V ID = 129A RG =0.8 12 ns 155 40 Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 129A, RG = 0.8Ω 5.4 mJ 3.7 Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 129A, RG = 0.8Ω 8.5 mJ 4.7 Source - Drain diode ratings and characteristics trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = - 129A IS = - 129A VR = 670V diS/dt = 600A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Max 129 97 1.3 18 320 650 21.6 58.3 Unit A V V/ns ns µC dv/dt numbers reflect the limitations of the circuit rather than the device itself. VR VDSS Tj 150°C IS - 129A di/dt 700A/µs www.microsemi.com 2–7 APTM100UM60FAG Rev 3 October, 2012 Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery APTM100UM60FAG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Torque Mounting torque 4000 -40 -40 -40 3 2 Wt Package Weight Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink For terminals M6 M5 Typ Max 0.055 150 125 100 5 3.5 300 Unit °C/W V °C N.m g SP6 Package outline (dimensions in mm) www.microsemi.com 3–7 APTM100UM60FAG Rev 3 October, 2012 See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM100UM60FAG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.06 0.9 0.05 0.7 0.04 0.03 0.5 0.02 0.3 0.01 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 480 VGS=15, 10&8V 300 7V 240 6.5V 180 6V 120 5.5V 60 0 5 10 15 20 25 360 300 240 180 TJ=25°C 120 60 5V 0 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 420 ID, Drain Current (A) TJ=125°C 30 0 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance 1.2 VGS=10V VGS=20V 1 3 4 5 6 7 8 9 140 Normalized to VGS=10V @ 64.5A 1.1 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.3 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 1.4 TJ=-55°C 0 0.9 0.8 120 100 80 60 40 20 0 0 50 100 150 200 250 300 350 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 4–7 APTM100UM60FAG Rev 3 October, 2012 ID, Drain Current (A) 360 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=64.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 100µs limited by RDSon 100 1ms Single pulse TJ=150°C TC=25°C 10 0.6 10ms 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 10000 Coss Crss 1000 100 0 10 20 30 40 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 14 ID=129A TJ=25°C 12 10 VDS=200V VDS=500V VDS=800V 8 6 4 2 0 50 VDS, Drain to Source Voltage (V) 0 250 500 750 1000 1250 1500 Gate Charge (nC) www.microsemi.com 5–7 APTM100UM60FAG Rev 3 October, 2012 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM100UM60FAG APTM100UM60FAG Delay Times vs Current Rise and Fall times vs Current 80 td(off) 160 VDS=670V RG=0.8Ω TJ=125°C L=100µH 120 80 0 40 tr 0 40 80 120 160 200 240 40 80 ID, Drain Current (A) 20 10 Switching Energy (mJ) Eoff 7.5 5 2.5 0 Eoff VDS=670V ID=129A TJ=125°C L=100µH 16 12 Eon 8 4 Eoff 0 40 80 120 160 200 240 0 ID, Drain Current (A) 1 2 3 4 5 6 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 250 IDR, Reverse Drain Current (A) 1000 200 Frequency (kHz) 240 ZCS 150 ZVS VDS=670V D=50% RG=0.8Ω TJ=125°C TC=75°C Hard switching 0 10 30 50 70 90 110 100 TJ=150°C 10 TJ=25°C 1 130 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) ID, Drain Current (A) www.microsemi.com 6–7 APTM100UM60FAG Rev 3 October, 2012 Switching Energy (mJ) Eon VDS=670V RG=0.8Ω TJ=125°C L=100µH 12.5 50 120 160 200 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 15 100 tf 20 td(on) 40 VDS=670V RG=0.8Ω TJ=125°C L=100µH 60 tr and tf (ns) td(on) and td(off) (ns) 200 APTM100UM60FAG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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