APTM100UM60FAG-Rev3.pdf

APTM100UM60FAG
Single Switch
MOSFET Power Module
Application
 Welding converters
 Switched Mode Power Supplies
 Uninterruptible Power Supplies
 Motor control
SK
S
D
Features
 Power MOS 7® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
 Kelvin source for easy drive
 Very low stray inductance
- Symmetrical design
- M5 power connectors
 High level of integration
 AlN substrate for improved thermal performance
DK
G
VDSS = 1000V
RDSon = 60m typ @ Tj = 25°C
ID = 129A @ Tc = 25°C
Benefits
 Outstanding performance at high frequency operation
 Direct mounting to heatsink (isolated package)
 Low junction to case thermal resistance
 Low profile
 RoHS Compliant
Absolute maximum ratings
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1000
129
97
516
±30
70
2272
25
50
3000
Unit
V
A
V
m
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1–7
APTM100UM60FAG Rev 3 October, 2012
Symbol
VDSS
APTM100UM60FAG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min
VGS = 0V,VDS = 1000V
Tj = 25°C
VGS = 0V,VDS = 800V
Tj = 125°C
VGS = 10V, ID = 64.5A
VGS = VDS, ID = 15mA
VGS = ±30 V, VDS = 0V
Typ
60
3
Max
600
3
70
5
±500
Unit
Max
Unit
µA
m
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 500V
ID = 129A
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Min
Typ
31.1
5.28
0.96
nF
1116
nC
144
732
18
Inductive switching @ 125°C
VGS = 15V
VBus = 670V
ID = 129A
RG =0.8
12
ns
155
40
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 129A, RG = 0.8Ω
5.4
mJ
3.7
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 129A, RG = 0.8Ω
8.5
mJ
4.7
Source - Drain diode ratings and characteristics
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Min
Typ
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 129A
IS = - 129A
VR = 670V
diS/dt = 600A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Max
129
97
1.3
18
320
650
21.6
58.3
Unit
A
V
V/ns
ns
µC
 dv/dt numbers reflect the limitations of the circuit rather than the device itself.
VR  VDSS
Tj  150°C
IS  - 129A di/dt  700A/µs
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2–7
APTM100UM60FAG Rev 3 October, 2012
Symbol Characteristic
IS
Continuous Source current
(Body diode)
VSD
Diode Forward Voltage
dv/dt Peak Diode Recovery 
APTM100UM60FAG
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Characteristic
Junction to Case Thermal Resistance
Min
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Torque
Mounting torque
4000
-40
-40
-40
3
2
Wt
Package Weight
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
To heatsink
For terminals
M6
M5
Typ
Max
0.055
150
125
100
5
3.5
300
Unit
°C/W
V
°C
N.m
g
SP6 Package outline (dimensions in mm)
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3–7
APTM100UM60FAG Rev 3 October, 2012
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
APTM100UM60FAG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.06
0.9
0.05
0.7
0.04
0.03
0.5
0.02
0.3
0.01
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
480
VGS=15, 10&8V
300
7V
240
6.5V
180
6V
120
5.5V
60
0
5
10
15
20
25
360
300
240
180
TJ=25°C
120
60
5V
0
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
420
ID, Drain Current (A)
TJ=125°C
30
0
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
1.2
VGS=10V
VGS=20V
1
3
4
5
6
7
8
9
140
Normalized to
VGS=10V @ 64.5A
1.1
2
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.3
1
VGS, Gate to Source Voltage (V)
VDS, Drain to Source Voltage (V)
1.4
TJ=-55°C
0
0.9
0.8
120
100
80
60
40
20
0
0
50
100 150
200 250
300 350
ID, Drain Current (A)
25
50
75
100
125
150
TC, Case Temperature (°C)
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4–7
APTM100UM60FAG Rev 3 October, 2012
ID, Drain Current (A)
360
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
ON resistance vs Temperature
2.5
VGS=10V
ID=64.5A
2.0
1.5
1.0
0.5
0.0
-50 -25
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
50
75 100 125 150
Maximum Safe Operating Area
1.1
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
25
1000
1.2
1.0
0.9
0.8
0.7
100µs
limited by RDSon
100
1ms
Single pulse
TJ=150°C
TC=25°C
10
0.6
10ms
1
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
1
Capacitance vs Drain to Source Voltage
Ciss
10000
Coss
Crss
1000
100
0
10
20
30
40
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
100000
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
14
ID=129A
TJ=25°C
12
10
VDS=200V
VDS=500V
VDS=800V
8
6
4
2
0
50
VDS, Drain to Source Voltage (V)
0
250
500
750
1000 1250 1500
Gate Charge (nC)
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5–7
APTM100UM60FAG Rev 3 October, 2012
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM100UM60FAG
APTM100UM60FAG
Delay Times vs Current
Rise and Fall times vs Current
80
td(off)
160
VDS=670V
RG=0.8Ω
TJ=125°C
L=100µH
120
80
0
40
tr
0
40
80
120
160
200
240
40
80
ID, Drain Current (A)
20
10
Switching Energy (mJ)
Eoff
7.5
5
2.5
0
Eoff
VDS=670V
ID=129A
TJ=125°C
L=100µH
16
12
Eon
8
4
Eoff
0
40
80
120
160
200
240
0
ID, Drain Current (A)
1
2
3
4
5
6
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
250
IDR, Reverse Drain Current (A)
1000
200
Frequency (kHz)
240
ZCS
150
ZVS
VDS=670V
D=50%
RG=0.8Ω
TJ=125°C
TC=75°C
Hard
switching
0
10
30
50
70
90
110
100
TJ=150°C
10
TJ=25°C
1
130
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
ID, Drain Current (A)
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6–7
APTM100UM60FAG Rev 3 October, 2012
Switching Energy (mJ)
Eon
VDS=670V
RG=0.8Ω
TJ=125°C
L=100µH
12.5
50
120
160
200
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
15
100
tf
20
td(on)
40
VDS=670V
RG=0.8Ω
TJ=125°C
L=100µH
60
tr and tf (ns)
td(on) and td(off) (ns)
200
APTM100UM60FAG
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Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
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is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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APTM100UM60FAG Rev 3 October, 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
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