APTM50HM38FG Full - Bridge MOSFET Power Module VDSS = 500V RDSon = 38m typ @ Tj = 25°C ID = 90A @ Tc = 25°C Application VBUS Q1 Q3 S1 OUT2 G3 OUT1 G1 S3 Q2 Features Q4 G4 G2 S4 S2 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control 0/VBUS Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 90 67 360 ±30 45 694 46 50 2500 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM50HM38FG– Rev 3 October, 2012 APTM50HM38FG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min VGS = 0V,VDS = 500V Tj = 25°C VGS = 0V,VDS = 400V Tj = 125°C VGS = 10V, ID = 45A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V Typ 38 3 Max 200 1000 45 5 ±150 Unit Max Unit µA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 250V ID = 90A Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Typ 11.2 2.4 0.18 nF 246 nC 66 130 18 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 90A RG = 2 35 ns 87 77 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 90A, RG = 2Ω 1510 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 90A, RG = 2Ω 2482 µJ 1452 µJ 1692 Source - Drain diode ratings and characteristics trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = - 90A IS = - 90A VR = 333V diS/dt = 200A/µs Tj = 25°C 233 Tj = 125°C 499 Tj = 25°C 3.8 Tj = 125°C 11.4 Max 90 67 1.3 15 Unit A V V/ns ns µC dv/dt numbers reflect the limitations of the circuit rather than the device itself. di/dt 700A/µs VR VDSS Tj 150°C IS - 90A www.microsemi.com 2–7 APTM50HM38FG– Rev 3 October, 2012 Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery APTM50HM38FG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Torque Mounting torque 4000 -40 -40 -40 3 2 Wt Package Weight Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink For terminals M6 M5 Typ Max 0.18 150 125 100 5 3.5 300 Unit °C/W V °C N.m g SP6 Package outline (dimensions in mm) www.microsemi.com 3–7 APTM50HM38FG– Rev 3 October, 2012 See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM50HM38FG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.18 0.9 0.16 0.7 0.14 0.12 0.5 0.1 0.08 0.3 0.06 0.04 0.1 0.02 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 300 8V VGS=10&15V 250 7.5V 200 7V 150 ID, Drain Current (A) ID, Drain Current (A) 10 250 350 6.5V 100 6V 50 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 200 150 100 TJ=25°C 50 TJ=125°C 5.5V 0 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 RDS(on) vs Drain Current 1.20 Normalized to VGS=10V @ 45A 1.15 VGS=10V 1.10 1.05 TJ=-55°C 1 2 3 4 5 6 7 VGS, Gate to Source Voltage (V) 8 DC Drain Current vs Case Temperature 100 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance 1 VGS=20V 1.00 0.95 0.90 0.85 0.80 80 60 40 20 0 0 50 100 150 200 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 4–7 APTM50HM38FG– Rev 3 October, 2012 Thermal Impedance (°C/W) 0.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=45A 2.0 1.5 1.0 0.5 0.0 -50 -25 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 50 75 100 125 150 Maximum Safe Operating Area 1.1 1.0 0.9 0.8 0.7 0.6 100µs limited by RDSon 100 limited by RDSon 10 1ms Single pulse TJ=150°C TC=25°C 10ms 1 -50 -25 0 25 50 75 100 125 150 1 TC, Case Temperature (°C) VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage Ciss C, Capacitance (pF) 25 1000 1.2 100000 0 TJ, Junction Temperature (°C) 10000 Coss 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 VDS=100V ID=90A 12 T =25°C J V =250V DS 10 VDS=400V 8 6 4 2 0 50 www.microsemi.com 0 40 80 120 160 200 240 280 320 Gate Charge (nC) 5–7 APTM50HM38FG– Rev 3 October, 2012 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM50HM38FG APTM50HM38FG Delay Times vs Current Rise and Fall times vs Current 120 td(off) 80 40 VDS=333V RG=2Ω TJ=125°C L=100µH td(on) 20 80 60 40 tr 20 0 0 20 40 60 80 100 120 140 20 40 60 ID, Drain Current (A) VDS=333V RG=2Ω TJ=125°C L=100µH 4 3 120 140 Switching Energy vs Gate Resistance Eon Eoff 2 100 8 Switching Energy (mJ) Switching Energy (mJ) 5 80 ID, Drain Current (A) Switching Energy vs Current 1 VDS=333V ID=90A TJ=125°C L=100µH 7 6 5 Eoff 4 Eon 3 2 Eoff 1 0 0 20 40 60 80 100 120 0 140 ID, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 350 VDS=333V D=50% RG=2Ω TJ=125°C TC=75°C ZVS 300 250 200 150 ZCS 100 Hard switching 50 0 20 30 40 50 60 5 10 15 20 25 Gate Resistance (Ohms) 400 Frequency (kHz) tf 70 1000 Source to Drain Diode Forward Voltage TJ=150°C 100 10 TJ=25°C 1 80 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) ID, Drain Current (A) www.microsemi.com 6–7 APTM50HM38FG– Rev 3 October, 2012 60 VDS=333V RG=2Ω TJ=125°C L=100µH 100 tr and tf (ns) td(on) and td(off) (ns) 100 APTM50HM38FG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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