Document No. 001-87730 Rev. ** ECN #: 4011693 Cypress Semiconductor Product Qualification Report QTP# 012406 May, 2013 High Speed USB Interface Device EZ-USB SX2 and AT2, R52FFD-3 Technology, Fab 4 CY7C68001 CY7C68300 CY7C68300A CY7C68013 CY7C68013A EZ-USB SX2 EZ-USB AT2 EZ-USB AT2 ™ EZ-USB FX2 ™ EZ-USB FX2LP ™ CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Zhaomin Ji Principal Reliability Engineer (408) 432-7021 Mira Ben-Tzur Quality Engineering Director (408) 943-2675 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 10 Document No. 001-87730 Rev. ** ECN #: 4011693 QUALIFICATION HISTORY Qual Report Description of Qualification Purpose 012406 New Technology Derivative, R52FFD-3, Fab 4 / New 10 Gb/s Quad Port Switch CY7C04312BV/ CY7C04314BV New EZ-USB SX2 CY7C68001 and AT2 CY7C68300. 032608 MM1/V1/MM2 Design change for CY7C68300A AT2 + LI ROM 011205 Date Comp June 01 Mar 02 Jul 03 Cypress products are manufactured using qualified processes. The technology qualification for this product is referenced above and must be considered to get a complete and thorough evaluation of the reliability of the product. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 10 Document No. 001-87730 Rev. ** ECN #: 4011693 PRODUCT DESCRIPTION Qualification Purpose: Qualify New EZ-USB device CY7C68001 R52FFD-3 Technology, Fab 4 Marketing Part #: CY7C68001/CY68300/CY7C68300A/CY7C68013/CY7C68013A Device Description: 3.3V, Commercial, available in 56-lead QFN and 56-lead SSOP package Cypress Division: Cypress Semiconductor Corporation – Interface Product Division (IPD) Overall Die (or Mask) REV: What ID markings on Die: Rev. E and A respectively 7C68013E TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 2 Metal Composition: Metal 1: 500Å TiW/6,000Å Al-0.5%Cu/300Å TiW Metal 2: 300Å Ti/8,000Å Al-0.5%Cu/300Å TiW Passivation Type and Materials: 1,000Å Oxide / 9,000 Å Nitride Free Phosphorus contents in top glass layer(%): 0% Number of Transistors: 2 million Number of Gates: 400, 000 Generic Process Technology/Design Rule (drawn): Gate Oxide Material/Thickness (MOS): CMOS, Double Metal, 0.25 m Name/Location of Die Fab (prime) Facility: Cypress Semiconductor – Bloomington, MN Die Fab Line ID/Wafer Process ID: Fab4/R52FFD-3 SiO2 55Å PACKAGE AVAILABILITY PACKAGE ASSEMBLY FACILITY SITE 56-lead QFN CML-RA , Amkor(M), Amkor (L) 56-lead SSOP JT – China, Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 10 Document No. 001-87730 Rev. ** ECN #: 4011693 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: O563 56-lead Small Shrunk Outline Package (SSOP) Sumitomo EME-6600HR V-O per UL94 Oxygen Rating Index: >28% Lead Frame Material: Copper Lead Finish, Composition / Thickness: Solder Plate, 85%Pb, 15%Sn Die Backside Preparation Method/Metallization: N/A Die Separation Method: Wafer Saw Die Attach Supplier: Dexter Die Attach Material: QMI 509 Die Attach Method: Epoxy Wire Bond Method: Thermosonic Wire Material/Size: Gold, 1.0mil Thermal Resistance Theta JA °C/W: 47.8C/W Package Cross Section Yes/No: N/A Name/Location of Assembly (prime) facility: CML-R ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-R Fault Coverage: 100% Note: Please contact a Cypress Representative for other packages availability Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 10 Document No. 001-87730 Rev. ** ECN #: 4011693 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test Test Condition (Temp/Bias) Result P/F High Temperature Operating Life Dynamic Operating Condition, Vcc = 3.8V, 125C P Dynamic Operating Condition, Vcc = 3.8V, 125C P MIL-STD-883C, Method 1010, Condition C, -65C to 150C Precondition: JESD22 Moisture Sensitivity MSL 3 P Early Failure High Temperature Operating Life Latent Failure Rate Temperature Cycle 192 Hrs., 30C/60%RH, 220C+5, -0C Reflow Pressure Cooker 121C, 100%RH Precondition: JESD22 Moisture Sensitivity MSL 3 192 Hrs, 30C/60%RH, 220C+5, 0C Reflow P High Accelerated Saturation Test (HAST) 130C, 3.63V, 85%RH P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V Electrostatic Discharge Charge Device Model (ESD-CDM) 500V, JESD22-C101C P Low Temperature Operating Life -30C, 4.3V P Acoustic Microscopy, MSL 3 JSTD-020 P SEM X-Section MIL-STD-883C, Method 2018.2 P Static Sensitivity Latchup 125ºC, 10V, ± 300mA P Precondition: JESD22 Moisture Sensitivity MSL 3 192 Hrs., 30C/60%RH, 220C+5, -0C Reflow P MIL-STD-883, Method 3015 In accordance with JEDEC 17. Cypress Spec. 01-00081 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 10 Document No. 001-87730 Rev. ** ECN #: 4011693 RELIABILITY FAILURE RATE SUMMARY Stress/Te st Device Tested/ Device Hours # Fails Activation Energy Acceleration Factor3 Failure Rate4 High Temperature Operating Life Early Failure Rate 1,010 0 N/A N/A 0 PPM High Temperature Operating Life Long Term Failure Rate1,,2 816,836 HRs 0 0.7 55 20 FIT . 1 Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate. 3 Thermal Acceleration Factor is calculated from the Arrhenius equation 2 E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 10 Document No. 001-87730 Rev. ** ECN #: 4011693 Reliability Test Data QTP #: 011205 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 3.8V, Vcc Max CY7C0430BV-BGI (7C04301A) 4049157 610108702 TAIWN-G 96 700 0 CY7C0430BV-BGI (7C04301A) 4101120 610110033 TAIWN-G 96 504 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 3.8V, Vcc Max CY7C0430BV-BGI (7C04301A) 4049157 610108702 TAIWN-G 168 410 0 CY7C0430BV-BGI (7C04301A) 4049157 610108702 TAIWN-G 500 409 0 CY7C0430BV-BGI (7C04301A) 4049157 610108702 TAIWN-G 1000 408 0 CY7C0430BV-BGI (7C04301A) 4101120 610110033 TAIWN-G 168 410 0 CY7C0430BV-BGI (7C04301A) 4101120 610110033 TAIWN-G 500 409 0 CY7C0430BV-BGI (7C04301A) 4101120 610110033 TAIWN-G 1000 407 0 TAIWN-G COMP 9 0 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY7C0430BV-BGI (7C04301A) STRESS: 610110033 TAIWN-G COMP 9 0 4101120 610110033 TAIWN-G COMP 3 0 500 48 0 LOW TEMPERATURE OPERATING LIFE, -30C, 4.3V CY7C0430BV-BGI (7C04301A) STRESS: 4101120 STATIC LATCH-UP TESTING, 125C, 10V, +/300mA CY7C0430BV-BGI (7C04301A) STRESS: 610110033 ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CY7C0430BV-BGI (7C04301A) STRESS: 4101120 4025035 610044436 TAIWN-G HI-ACCEL SATURATION TEST, 130C, 85%RH, 3.63V, PRE COND 192 HR 30C/60%RH, MSL3 CY7C0430BV-BGI (7C04301A) 4044731 610051943 TAIWN-G 128 46 0 CY7C0430BV-BGI (7C04301A) 4045135 610101405 TAIWN-G 128 57 0 STRESS: PRESSURE COOKER TES, 121C, 100%RH, PRE COND 192 HR 30C/60%RH, MSL3 CY7C0430BV-BGI (7C04301A) 4044731 610051943 TAIWN-G 168 48 0 CY7C0430BV-BGI (7C04301A) 4045135 610101405 TAIWN-G 168 50 0 CY7C0430BV-BGI (7C04301A) 4044731 610051943 TAIWN-G COMP 15 0 CY7C0430BV-BGI (7C04301A) 4045135 610101405 TAIWN-G COMP 15 0 CY7C0430BV-BGI (7C04301A) 4047508 610103357 TAIWN-G COMP 15 0 STRESS: ACOUSTIC, MSL3 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 10 Document No. 001-87730 Rev. ** ECN #: 4011693 Reliability Test Data QTP #: 011205 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism TC COND. C -65C TO 150C, PRECONDITION 192 HRS 30C/60%RH, MSL3 CY7C0430BV-BGI (7C04301A) 4044731 610051943 TAIWN-G 300 48 0 CY7C0430BV-BGI (7C04301A) 4044731 610051943 TAIWN-G 500 48 0 CY7C0430BV-BGI (7C04301A) 4044731 610051943 TAIWN-G 1000 47 0 CY7C0430BV-BGI (7C04301A) 4045135 610101405 TAIWN-G 300 50 0 CY7C0430BV-BGI (7C04301A) 4045135 610101405 TAIWN-G 500 50 0 CY7C0430BV-BGI (7C04301A) 4045135 610101405 TAIWN-G 1000 50 0 300 48 0 *STRESS: TC COND, C -65C TO 150C CY7C0430BV-BGI (7C04301A) 4049157 610108702 TAIWN-G CY7C0430BV-BGI (7C04301A) 4049157 610108702 TAIWN-G 500 48 0 CY7C0430BV-BGI (7C04301A) 4049157 610108702 TAIWN-G 1000 47 0 CY7C0430BV-BGI (7C04301A) 4101120 610110033 TAIWN-G 300 48 0 CY7C0430BV-BGI (7C04301A) 4101120 610110033 TAIWN-G 500 48 0 CY7C0430BV-BGI (7C04301A) 4101120 610110033 TAIWN-G 1000 47 0 *Note: No precondition performed. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 10 Document No. 001-87730 Rev. ** ECN #: 4011693 Reliability Test Data QTP #: 012406 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 3.8V, Vcc Max CY7C68001-0C (7C68001E) 4146735 610201990 CSPI-R 96 1010 0 CSPI-R COMP 9 0 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY7C68001-0C (7C68001E) STRESS: 610201990 ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CY7C68001-0C (7C68001E) STRESS: 4146735 4146735 610201990 CSPI-R COMP 9 0 CSPI-R COMP 3 0 STATIC LATCH-UP TESTING, 125C, 10V, +/300mA CY7C68001-0C (7C68001E) 4146735 610201990 Document History Page Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 10 Document No. 001-87730 Rev. ** ECN #: 4011693 Document Title: QTP # 012406 : HIGH SPEED USB INTERFACE DEVICE EZ-USB SX2 AND AT2, R52FFD-3 TECHNOLOGY, FAB 4 Document Number: 001-87730 Rev. ECN Orig. of No. Change ** 4011693 ILZ Description of Change Initial Spec Release Qualification report published on Cypress.com is not in spec format. Initiated spec for QTP 012406 and updated current assembly site and package information qualified for package options for this device qualifcation Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 10