PHILIPS BLF2043

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D438
BLF2043
UHF power LDMOS transistor
Objective specification
Supersedes data of 2000 Feb 17
2000 Feb 23
Philips Semiconductors
Objective specification
UHF power LDMOS transistor
BLF2043
FEATURES
PINNING - SOT538A
• High power gain
PIN
DESCRIPTION
• Easy power control
1
drain
• Excellent ruggedness
2
gate
• Source on mounting base eliminates DC isolators,
reducing common mode inductance
3
source
• Designed for broadband operation (HF to 2.2 GHz).
1
handbook, halfpage
APPLICATIONS
• Communication transmitter applications in the UHF
frequency range.
3
DESCRIPTION
2
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flangeless package
(SOT538A) with a ceramic cap. The common source is
connected to the mounting base.
Top view
MBK905
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
f1 = 2000; f2 = 2000.1
26
10 (PEP)
>12
>30
≤−26
MODE OF OPERATION
CW, class-AB (2-tone)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
75
V
VGS
gate-source voltage
−
±15
V
ID
drain current (DC)
−
2.2
A
Ptot
total power dissipation
−
tbf
W
Tstg
storage temperature
Tmb ≤ 25 °C
−65
+150
°C
Tj
junction temperature
−
200
°C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2000 Feb 23
2
Philips Semiconductors
Objective specification
UHF power LDMOS transistor
BLF2043
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
5
K/W
0.4
K/W
Tmb = 25 °C; note 1
Rth j-mb
thermal resistance from junction to mounting base
Rth mb-h
thermal resistance from mounting base to heatsink
Note
1. Thermal resistance is determined under RF operating conditions.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 0.2 mA
75
−
−
V
VGSth
gate-source threshold voltage
VDS = 10 V; ID = 20 mA
4
−
5
V
IDSS
drain-source leakage current
VGS = 0; VDS = 26 V
−
−
1.5
µA
IDSX
on-state drain current
VGS = VGSth + 9 V; VDS = 10 V
3
−
−
A
IGSS
gate leakage current
VGS = ±15 V; VDS = 0
−
−
40
nA
gfs
forward transconductance
VDS = 10 V; ID = 0.75 A
−
0.5
−
S
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 0.75 A
−
1.2
−
Ω
Cis
input capacitance
VGS = 0; VDS = 26 V; f = 1 MHz
−
11
−
pF
Cos
output capacitance
VGS = 0; VDS = 26 V; f = 1 MHz
−
9
−
pF
Crs
feedback capacitance
VGS = 0; VDS = 26 V; f = 1 MHz
−
0.5
−
pF
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th = 25 °C; Rth mb-h = 0.4 K/W, unless otherwise specified.
MODE OF OPERATION
CW, class-AB (2-tone)
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
f1 = 2000; f2 = 2000.1
26
25
10 (PEP)
>12
>30
≤−26
Ruggedness in class-AB operation
The BLF2043 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: VDS = 26 V; f = 2000 MHz at rated load power.
2000 Feb 23
3
Philips Semiconductors
Objective specification
UHF power LDMOS transistor
BLF2043
MGS999
MGT001
10
6
handbook, halfpage
handbook,
Z halfpage
L
(Ω)
Zi
(Ω)
RL
4
8
2
xi
6
0
4
−2
2
−4
ri
0
1.8
XL
2
f (GHz)
−6
1.8
2.2
2
f (GHz)
VDS = 26 V; IDQ = 25 mA; PL = 10 W; Th ≤ 25 °C.
Impedance measured at reference planes (see Fig.4).
VDS = 26 V; IDQ = 25 mA; PL = 10 W; Th ≤ 25 °C.
Impedance measured at reference planes (see Fig.4).
Fig.2
Fig.3
Input impedance as a function of frequency
(series components); typical values.
handbook, halfpage
reference planes
Fig.4
MGT002
Measuring reference planes SOT538A.
2000 Feb 23
4
2.2
Load impedance as a function of frequency
(series components); typical values.
Philips Semiconductors
Objective specification
UHF power LDMOS transistor
BLF2043
PACKAGE OUTLINE
Ceramic surface mounted package; 2 leads
SOT538A
Package under
development
D
Philips Semiconductors reserves the
right to make changes without notice.
A
3
D1
D2
B
c
1
L
E2
H
E1
E
2
α
w1 M B M
b
Q
0
2.5
5 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
D2
E
E1
E2
H
L
Q
w1
α
mm
2.95
2.29
1.35
1.19
0.23
0.18
5.16
5.00
4.65
4.50
5.41
5.00
4.14
3.99
3.63
3.48
4.14
3.99
7.49
7.24
2.03
1.27
0.10
0.00
0.25
7°
0°
inches
0.116
0.090
0.053
0.047
0.009
0.007
0.203
0.197
0.183
0.177
0.213
0.197
0.163
0.157
0.143
0.137
0.163
0.157
0.295
0.285
0.080
0.050
0.004
0.000
0.010
7°
0°
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
99-03-30
SOT538A
2000 Feb 23
EUROPEAN
PROJECTION
5
Philips Semiconductors
Objective specification
UHF power LDMOS transistor
BLF2043
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
2000 Feb 23
6
Philips Semiconductors
Objective specification
UHF power LDMOS transistor
BLF2043
NOTES
2000 Feb 23
7
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SCA 69
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Printed in The Netherlands
603516/03/pp8
Date of release: 2000
Feb 23
Document order number:
9397 750 06909