Document No. 001-87829 Rev. ** ECN #: 4020459 Cypress Semiconductor Product Qualification Report QTP# 053403 June 2013 PSoC™ Lithium Device Family S4AD-5CMI Technology, Fab 4 CY8C22113A CY8C22213A Mixed Signal Array with On-Chip Controller CY8C24123A CY8C24223A CY8C24423A Mixed Signal Array with On-Chip Controller CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Zhaomin Ji Principal Reliability Engineer (408) 432-7021 Mira Ben-Tzur Quality Engineering Director (408) 943-2675 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 11 Document No. 001-87829 Rev. ** ECN #: 4020459 PRODUCT QUALIFICATION HISTORY Qual Report 052004 PSoC 8C21001A Neutron Product Family on SONOS S4AD-5 Technology, Fab4 Date Comp Aug 05 053403 PSoC 8C24x23A Lithium Device Product Family on S4AD-5 Technology, Fab4 Sep 05 Description of Qualification Purpose Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 11 Document No. 001-87829 Rev. ** ECN #: 4020459 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify New Device CY8C22xxxA/CY8C24xxxA Lithium Product Family in S4D-5CMI in Fab 4 Marketing Part #: CY8C24123A, CY8C24223A, CY8C24423A, CY8C22113A, CY8C22213A Device Description: 3.3V and 5V Industrial Programmable System on Chip available in 20/28-Lead SSOP, 8/20/28-Lead SOIC, 8/20/28-Lead PDIP, 32-Lead MLF Cypress Division: Computer & Computation Division Overall Die (or Mask) REV Level (pre-requisite for qualification): What ID markings on Die: Rev. B 8C24000B TECHNOLOGY/FAB PROCESS DESCRIPTION S4AD-5 Number of Metal Layers: 2 Metal 1: 500A Ti/6,000A Al /300A TiW Metal Composition: Metal 2: 500A Ti/8,000A Al /300A TiW Passivation Type and Materials: 7,000A TEOS / 6,000A Si3N4 Free Phosphorus contents in top glass layer (%): 0% Number of Transistors in Device: 150,000 Number of Gates in Device 25,000 Generic Process Technology/Design Rule (µ- Single Poly, Double Metal, 0.35 µm drawn): Gate Oxide Material/Thickness (MOS): SiO2 / 110A Name/Location of Die Fab (prime) Facility: Cypress Semiconductor - Minnesota Die Fab Line ID/Wafer Process ID: Fab 4, S4AD-5, SONOS PACKAGE AVAILABILITY PACKAGE ASSEMBLY SITE FACILITY 8-Lead SOIC PHIL-M, CML-RA, CHINA-JT 20/28-Lead SOIC CML-RA, CHINA-JT 20/28-Lead SSOP TAIWN-T, PHIL-M, CML-RA 8/20/28-Lead PDIP PHIL-M, 32-Lead QFN CML-RA Note: Package Qualification details upon request. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 11 Document No. 001-87829 Rev. ** ECN #: 4020459 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: SP28 28-Lead Shrunk Small Outline Package (SSOP) Hitachi CEL9220HF V-O per UL94 Oxygen Rating Index: >28% Lead Frame Material: Copper Lead Finish, Composition / Thickness: Pure Sn (100%) Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: Sawing 100% Die Attach Supplier: Ablestik Die Attach Material: 8340 Die Attach Method: Epoxy Bond Diagram Designation: 10-05890 Wire Bond Method: Thermosonic Wire Material/Size: Au. 1.0mil Thermal Resistance Theta JA °C/W: 96°C/W Package Cross Section Yes/No: N/A Assembly Process Flow: 49-35032 Name/Location of Assembly (prime) facility: OSE-Taiwan (T) ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-R Fault Coverage: 100% Note: Please contact a Cypress Representative for other packages availability. 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Page 4 of 11 Document No. 001-87829 Rev. ** ECN #: 4020459 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Te st Test Condition (Temp/Bias Dynamic Operating Condition, Vcc Max=5.5V, 125°C Result P/F High Temperature Operating Life Latent Failure Rate Dynamic Operating Condition, Vcc Max=5.5V, 125°C P High Accelerated Saturation Test (HAST) 130°C, 5.25V, 85%RH P Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity Level 1 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C P Pressure Cooker 121°C, 100%RH P High Temperature Operating Life Early P Precondition: JESD22 Moisture Sensitivity Level 1 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C Precondition: JESD22 Moisture Sensitivity Level 1 168 Hrs, 85C/85%RH+3IR-Reflow, 260°C+0, -5°C Data Retention 150°C ± 5°C No Bias P High Temperature Steady State life 125°C, 5.5V, Vcc Max P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V JESD22, Method A114-B P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V MIL-STD-883, Method 3015.7 P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V, JESD22-C101C P Endurance Test MIL-STD-883, Method 883-1033 P Age Bond Strength 200C, 4hrs MIL-STD-883, Method 883-2011 P Low Temperature Operating Life -30C, 5.5V, 8MHZ P SEM Analysis MIL-STD-883, Method 883-2018-2 P Acoustic Microscopy P Dynamic Latch up J-STD-020 In accordance with JESD78 Latch up Sensitivity 125C, 11V/11.5V, ± 300mA P In accordance with JEDEC 17 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 11 P Document No. 001-87829 Rev. ** ECN #: 4020459 RELIABILITY FAILURE RATE SUMMARY Device Tested/ Device Hours # Fails Activation Energy Thermal3 A.F Failure Rate High Temperature Operating Life Early Failure Rate1 2,004 Devices 0 N/A N/A 0 PPM High Temperature Operating Life1, 2 Long Term Failure Rate 528,750 DHRs 0 0 .7 55 31 FIT Stress/Te st 1 2 3 Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 Where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. 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Page 6 of 11 Document No. 001-87829 Rev. ** ECN #: 4020459 Reliability Test Data QTP #: 052004 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej ACOUSTIC, MSL1 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 15 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M COMP 15 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M COMP 15 0 STRESS: AGE BOND STRENGTH CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 10 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M COMP 10 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M COMP 10 0 STRESS: DATA RETENTION, PLASTIC, 150C CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 500 256 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 1000 256 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 500 256 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 1000 254 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 500 252 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 1000 252 0 4516647 610521157 TAIWN-T COMP 45 0 STRESS: ENDURANCE CY8C21534 (8C21534A) STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 9 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T COMP 9 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 9 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T COMP 9 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T COMP 9 0 STRESS: Failure Mechanism ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, (2,200V) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 3 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T COMP 3 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T COMP 3 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 11 Document No. 001-87829 Rev. ** ECN #: 4020459 Reliability Test Data QTP #: Device STRESS: Fab Lot # Assy Lot # 052004 Assy Loc Duration Samp Rej CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 120 1002 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 120 1002 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 120 1002 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.5V, Vcc Max) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 750 235 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T 750 235 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T 750 235 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST (125C, 5.5V) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 168 76 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 336 76 0 STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 168 HR 85C/85%RH (MSL1) CY8C21234 (8C21234A) 4516647 610527569 PHIL-M 128 49 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 128 44 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 128 44 0 500 45 0 STRESS: Failure Mechanism HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max) LOW TEMPERATURE OPERATING LIFE (-30C, 5.5V) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T STRESS: PRESSURE COOKER TEST (121C, 100%RH), PRE COND 168 HR 85C/85%RH (MSL1) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 168 45 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 336 45 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 168 45 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 336 45 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 168 45 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 336 45 0 STRESS: STATIC LATCH-UP TESTING (125C, 11V, ±300mA) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 3 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T COMP 3 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T COMP 3 0 610521157 TAIWN-T COMP 3 0 STRESS: DYNAMIC LATCH-UP (8.3V) CY8C21534 (8C21534A) 4516647 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 11 Document No. 001-87829 Rev. ** ECN #: 4020459 Reliability Test Data QTP #: 052004 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism TC COND. C -65C TO 150C, PRECONDITION 168 HRS 85C/85%RH (MSL1) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 300 50 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 500 50 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 1000 50 0 CY8C21534 (8C21534A) 4516647 610521849 TAIWN-T 300 45 0 CY8C21534 (8C21534A) 4516647 610521849 TAIWN-T 1000 45 0 CY8C21534 (8C21534A) 4516647 610522407 TAIWN-T 300 45 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 11 Document No. 001-87829 Rev. ** ECN #: 4020459 Reliability Test Data QTP #: 053403 Device STRESS: Fab Lot # Rej Failure Mechanism 4524138 610535004 TAIWN-T 96 2004 0 4524138 610535004 TAIWN-T COMP 9 0 4524138 610535004 9 0 COMP 3 0 COMP 3 0 TAIWN-T COMP ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CY8C24423A (8C24423B) STRESS: Samp ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2,200V CY8C24423A (8C24423B) STRESS: Duration ESD-CHARGE DEVICE MODEL, 500V CY8C24423A (8C24423B) STRESS: Assy Loc HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 5.5V, Vcc Max CY8C24423A (8C24423B) STRESS: Assy Lot # 4524138 610535004 TAIWN-T STATIC LATCH-UP TESTING, 125C, 11.5V, ±300mA CY8C24423A (8C24423B) 4524138 610535004 TAIWN-T Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 11 Document No. 001-87829 Rev. ** ECN #: 4020459 Document History Page Document Title: Document Number: QTP # 053403 : PSoC LITHIUM DEVICE FAMILY S4AD-5CMI TECHNOLOGY, FAB 4 001-87829 Rev. ECN Orig. of No. Change ** 4020459 ILZ Description of Change Initial Spec Release Qualification report published on Cypress.com is documented on memo LGQ-508 and not in spec format. Initiated spec for QTP 053403 and data from LGQ-508 was transferred to qualification report spec template. Updated package availability based on current qualified test & assembly site. Deleted Cypress reference Spec and replaced with Industry Standards. Deleted previous package assembly information and replaced with existing and qualified assembly site Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 11