Features • • • • • • • Frequency Range 4.9 GHz to 5.9 GHz Supply-voltage 2.7 V to 3.6 V 2.5% EVM at 19 dBm Output Power at 54 Mbit/s OFDM 26.5 dB P1dB On-chip Power Detector with 20 dB Dynamic Range Power-down Mode and Biasing Control Low Profile Lead-free Plastic Package QFN16 (4 ´ 4 ´ 0.9 mm) Applications • • • • 5-GHz WLAN Power Amplifier for 802.11a IEEE 802.11a OFDM WLAN Hiperlan2 WLAN PC Cards, PCMCIA 5 GHz ISM Band Application Electrostatic sensitive device. Observe precautions for handling. ATR3515 Description Preliminary Process The 5-GHz power amplifier is designed in Atmel’s advanced Silicon-Germanium (SiGe) process and provides excellent linearity and noise performance as well as good power-added efficiency. Circuitry The PA consists of a two-stage amplifier with a P1db of 26 dBm. The output stage was realized using an open-collector structure. Power-up/down and output level are controlled at bias control pin 6 (VCTL). An on-chip power detector provides a voltage proportional to the output power. Figure 1. Block Diagram VCC1 15 VCC2 13 ATR3515 RFIN 3 RFOUT 11 RFOUT 10 Matching Power Detector Bias control 6 VCTL 16 VCC_CTL 7 VDET_OUT Rev. 4514H–WLAN–12/03 Pin Configuration VCC_CTL VCC1 GND VCC2 Figure 2. Pinning QFN16 16 15 14 13 12 GND 1 2 ATR3515 11 RFOUT 3 GND on the 10 RFOUT Paddel 9 GND 4 5 6 7 8 GND VCTL VDET_OUT GND GND NC RFIN GND Pin Description 2 Pin Symbol Function 1 GND 2 NC 3 RFIN RF input 4 GND Ground 5 GND Ground 6 VCTL Power-up/biasing control voltage 7 VDET_OUT 8 GND Ground 9 GND Ground 10 RFOUT RF output 11 RFOUT RF output 12 GND Ground 13 VCC2 Supply voltage for PA stage 14 GND Ground 15 VCC1 Supply voltage for driver stage 16 VCC_CTL Paddel – Ground Not connected Power detector output voltage Supply voltage for biasing control Ground ATR3515 [Preliminary] 4514H–WLAN–12/03 ATR3515 [Preliminary] Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Symbol Value Unit Supply voltage Pin VCC 3.8 V Supply current ICC 800 mA Junction temperature Tj 150 °C Storage temperature TStg -40 to +125 °C Input RF power PIN 12 dBm VCTL 0 to 2.0 V Control voltage power up/down and biasing Note: The part may not survive all maximums applied simultaneously. Operating Range Parameters Symbol Value Unit Supply voltage range VCC 2.7 to 3.6 V Ambient temperature range Tamb -25 to +75 °C Electrical Characteristics No. Parameters 1.0 Supply voltage 1.1 Frequency range 1.2 1.3 1.4 Control voltage range Control current Test Conditions Pin Symbol Min. Typ. Max. Unit Type* VCC 2.7 3.3 3.6 V A f 4.9 5.9 GHz A PA operating mode VCTL 1.3 1.9 V A Power down mode VCTL 0.2 V A PA Operation ICTL 200 µA A 1.5 Current consumption Quiescent Icq 1.6 Current consumption Power down mode Ipd 1.7 Turn on/off time ON is the time that ICC returns to normal and OFF is the time the current needs to decrease to 10% of normal mode 1.8 Input and output return loss With external matching 1.9 1.10 Spectrum mask(1) 1.11 mA A 10 µA A 0.5 0.6 µs C -12 -8 dB C At ±11 MHz offset from carrier -22 dBr B At ±20 MHz offset from carrier -30 dBr B At ±30 MHz offset from carrier -42 dBr B ton/off 180 *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Note: 1. OFDM signal according to 802.11a specification with Pout = 21 dBm at 54 Mbps. 3 4514H–WLAN–12/03 Electrical Characteristics - Unmodulated Carrier Test Conditions (unless otherwise stated): VCC = 3.3 V, Frequency = 5.25 GHz, Tamb = 25°C No. Parameters Test Conditions Pin Symbol 2.0 Saturated output power For reference Psat 2.1 P1dB output power 2.3 Small signal gain 2.4 Gain deviation 2.5 Reverse isolation Min. Typ. Max. Unit Type* 28 dBm A P1dB 26.5 dBm A Icq = 180 mA, small signal condition GL 18 dB A Within 200 Mhz frequency band Gd -1 dB A ISOr 30 dB C +1 36 *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Electrical Characteristics - 54 Mbps OFDM-modulation Test Conditions (unless otherwise stated): VCC = 3.3 V, Frequency = 5.25 GHz, Tamb = 25°C, IEEE802.11a conform 54 Mbps OFDM modulation, EVM measurement equipement noise floor included in EVM measurement result . No. Parameters Test Conditions 3.0 Error vector magnitude POUT = 19 dBm 3.1 Linear power gain 3.2 Current consumption Pin Symbol Unit Type* EVM Min. Typ. 2.5 Max. % C POUT = 19 dBm GL 20 dB C POUT = 19 dBm ICC 240 mA A Max. Unit Type* 2.4 V A µs C *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Electrical Characteristics - Power Detector Test Conditions (unless otherwise stated): VCC = 3.3 V, Frequency = 5.25 GHz, Tamb = 25°C. No. Parameters Symbol Min. 4.0 Detector voltage range POUT = 2 to 28 dBm Test Conditions Pin VDET 0 4.2 Settling time tset Typ. 0.5 *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter 4 ATR3515 [Preliminary] 4514H–WLAN–12/03 ATR3515 [Preliminary] Figure 3. Application Circuit VCC_CTL VCC1 VCC2 * Output ATR3515 Input * * * microstrip line VCTL VDET_OUT 5 4514H–WLAN–12/03 Ordering Information Extended Type Number Package Remarks ATR3515-PEP QFN16 - 4x4 Taped and reeled, MOQ 1,500 ATR3515-PEQ QFN16 - 4x4 Taped and reeled, MOQ 6,000 Package Information 6 ATR3515 [Preliminary] 4514H–WLAN–12/03 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 ASIC/ASSP/Smart Cards 1150 East Cheyenne Mtn. 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