STGW39NC60VD N-CHANNEL 40A - 600V - TO-247 Very Fast PowerMESH™ IGBT TARGET SPECIFICATION Table 1: General Features TYPE STGW39NC60VD ■ ■ ■ ■ ■ ■ Figure 1: Package VCES VCE(sat) (Max) @25°C 600V IC @100°C < 2.5 V 40 A HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50 KHz LOSSES INCLUDE DIODE RECOVERY ENERGY OFF LOSSES INCLUDE TAIL CURRENT LOWER CRES / CIES RATIO NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRUBUTION DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “V” identifies a family optimized for high frequency. 3 2 1 TO-247 Figure 2: Internal Schematic Diagram APPLICATIONS ■ HIGH FREQUENCY INVERTERS ■ SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES ■ UPS ■ MOTOR DRIVERS Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STGW39NC60VD GW39NC60VD TO-247 TUBE Rev. 1 November 2005 This is a preliminary information on a new product now in development. Details are subject to change without notice. 1/10 STGW39NC60VD Table 3: Absolute Maximum ratings Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Reverse Battery Protection 20 V VGE Gate-Emitter Voltage ± 20 V IC Collector Current (continuous) at 25°C (#) 70 A IC Collector Current (continuous) at 100°C (#) 40 A Collector Current (pulsed) 100 A ICM (1) If PTOT Tstg Tj Diode RMS Forward Current at Tc = 25°C 40 A Total Dissipation at TC = 25°C 215 W Derating Factor 1.72 W/°C – 55 to 150 °C Storage Temperature Operating Junction Temperature (1)Pulse width limited by max. junction temperature. Table 4: Thermal Data Min. Max. Unit 0.58 °C/W Thermal Resistance Junction-case (Diode) 1.5 °C/W Thermal Resistance Junction-ambient 50 °C/W Rthj-case Thermal Resistance Junction-case Rthj-case Rthj-amb TL Maximum Lead Temperature for Soldering Purpose (1.6 mm from case, for 10 sec.) Typ. 300 °C ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 5: Off Symbol Parameter VBR(CES) Collectro-Emitter Breakdown Voltage IC = 1mA, VGE = 0 Test Conditions ICES Collector-Emitter Leakage Current (VCE = 0) VGE = Max Rating, Tc=25°C Tc=125°C IGES Gate-Emitter Leakage Current (VCE = 0) VGE = ± 20V , VCE = 0 Min. Typ. Max. 600 Unit V 10 1 µA mA ± 100 nA Max. Unit 5.75 V 2.5 V V Table 6: On Symbol VGE(th) VCE(SAT) Parameter Gate Threshold Voltage VCE= VGE, IC= 250µA Collector-Emitter Saturation Voltage VGE= 15V, IC= 30A, Tj= 25°C VGE= 15V, IC= 30A, Tj= 125°C (#) Calculated according to the iterative formula: T –T JMAX C I ( T ) = -------------------------------------------------------------------------------------------------C C R ×V (T , I ) THJ – C CESAT ( M AX ) C C 2/10 Test Conditions Min. Typ. 3.75 1.8 1.7 STGW39NC60VD ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs(1) Forward Transconductance VCE = 15V, IC= 30A TBD S Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 25V, f = 1MHz, VGE = 0 TBD TBD TBD pF pF pF Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 390V, IC = 30A, VGE = 15V, (see Figure 5) TBD TBD TBD nC nC nC ICL Turn-Off SOA Minimum Current Vclamp = 480V , Tj = 150°C RG = 100Ω, VGE= 15V 200 A Table 8: Switching On Symbol Parameter Test Conditions td(on) tr (di/dt)on Eon (2) Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Switching Losses VCC = 390V, IC = 30A RG= 3.3Ω, VGE= 15V, Tj= 25°C (see Figure 3) td(on) tr (di/dt)on Eon (2) Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Switching Losses VCC = 390V, IC = 30A RG= 3.3Ω, VGE= 15V,Tj= 125°C (see Figure 3) Min. Typ. TBD TBD TBD TBD Max. Unit TBD ns ns A/µs µJ TBD TBD TBD TBD ns ns A/µs µJ (2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C) Table 9: Switching Off Symbol Parameter tr(Voff) Off Voltage Rise Time td(off) Turn-off Delay Time tf Eoff (3) Ets Current Fall Time Total Switching Loss Off Voltage Rise Time td(off) Turn-off Delay Time Eoff (3) Ets Vcc = 390V, IC = 30A, RGE = 3.3Ω , VGE = 15V TJ = 25°C (see Figure 3) Turn-off Switching Loss tr(Voff) tf Test Conditions Vcc = 390V, IC = 30A, RGE = 3.3Ω , VGE = 15V Tj = 125°C (see Figure 3) Min. Typ. Max. Unit TBD ns TBD ns TBD ns TBD TBD µJ TBD TBD µJ TBD ns TBD ns TBD ns Turn-off Switching Loss TBD µJ Total Switching Loss TBD µJ Current Fall Time (3)Turn-off losses include also the tail of the collector current. 3/10 STGW39NC60VD Table 10: Collector-Emitter Diode Symbol Vf 4/10 Parameter Test Conditions Min. Typ. Max. Unit 1.4 1.1 2.1 V V Forward On-Voltage If = 30A If = 30A, Tj = 125°C trr ta Qrr Irrm S Reverse Recovery Time If = 30A ,VR = 40V, Tj = 25°C, di/dt = 100A/µs (see Figure 6) 44 32 66 3 0.375 ns ns nC A trr ta Qrr Irrm S Reverse Recovery Time If = 30A ,VR = 40V, Tj =125°C, di/dt = 100A/µs (see Figure 6) 88 56 237 5.4 0.57 ns ns nC A Reverse Recovery Charge Reverse Recovery Current Softness factor of the diode Reverse Recovery Charge Reverse Recovery Current Softness factor of the diode STGW39NC60VD Figure 3: Test Circuit for Inductive Load Switching Figure 5: Gate Charge Test Circuit Figure 4: Switching Waveforms Figure 6: Diode Recovery Times Waveform 5/10 STGW39NC60VD In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 6/10 STGW39NC60VD TO-247 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 0.620 0.214 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 5.50 0.216 7/10 STGW39NC60VD ISOWATT218 MECHANICAL DATA DIM. A C D D1 E F F2 F3 G H L L1 L2 L3 L4 L5 L6 N R DIA MIN. 5.35 3.30 2.90 1.88 0.75 1.05 1.50 1.90 10.80 15.80 mm TYP. MAX. 5.65 3.80 3.10 2.08 0.95 1.25 1.70 2.10 11.20 16.20 MIN. 0.211 0.130 0.114 0.074 0.030 0.041 0.059 0.075 0.425 0.622 21.20 19.90 23.60 42.50 5.25 20.75 2.3 0.819 0.752 0.898 1.594 0.191 0.797 0.083 3.7 0.138 9 20.80 19.10 22.80 40.50 4.85 20.25 2.1 0.835 0.783 0.929 1.673 0.207 0.817 0.091 0.181 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 µm 8/10 MAX. 0.222 0.150 0.122 0.082 0.037 0.049 0.067 0.083 0.441 0.638 0.354 4.6 3.5 inch TYP. 0.146 P025C/A STGW39NC60VD Table 11: Revision History Date Revision 17-Nov-2005 1 Description of Changes First Release 9/10 STGW39NC60VD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 10/10