Document No.001-72248 Rev. *B ECN # 4502469 Cypress Semiconductor Product Qualification Report QTP# 102201 VERSION*B September, 2014 72 Meg High Density Programmable FIFO Family 65nm (LL65P-18R) Technology, UMC Fab 12A CYFB0072V33L/CYFB0072V18L 72 Mbit Programmable FIFOs (Frame Buffers) CYF0072V33L/CYF0072V18L CYF0018V18L/CYF0018V33L CYF0036V18L/CYF0036V33L CYF1018V18L/CYF1018V33L CYF1036V18L/CYF1036V33L CYF1072V18L/CYF1072V33L CYF2018V18L/CYF2018V33L CYF2036V18L/CYF2036V33L CYF2072V18L/CYF2072V33L CYF0072V15L CYF0072V25L CYF1072V15L CYF1072V25L 72 Mbit Programmable FIFOs 18 Mbit Programmable FIFOs 36 Mbit Programmable FIFOs 18 Mbit Programmable 2-Queue FIFOs 36 Mbit Programmable 2-Queue FIFOs 72 Mbit Programmable 2-Queue FIFOs 18 Mbit Programmable Multi-Queue FIFOs 36 Mbit Programmable Multi-Queue FIFOs 72 Mbit Programmable Multi-Queue FIFOs 72 Mbit Programmable FIFOs with IO LVCMOS 1.5 72 Mbit Programmable FIFOs with IO LVCMOS 2.5 72 Mbit Programmable 2-Queue FIFOs with IO LVCMOS 1.5 72 Mbit Programmable 2-Queue FIFOs with IO LVCMOS 2.5 CYF2072V15L 72 Mbit Programmable Multi-Queue FIFOs with IO LVCMOS 1.5 CYF2072V25L 72 Mbit Programmable Multi-Queue FIFOs with IO LVCMOS 2.5 FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Josephine Pineda Reliability Engineer Reviewed By: Zhaomin Ji Reliability Manager Approved By: Richard Oshiro Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 14 Document No.001-72248 Rev. *B ECN # 4502469 QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 091706 Qualification of 65nm (LL65) Technology at UMC Fab 12A and New Device CY7C1553K Base Die Product Family Aug 2009 093202 Qualification of UMC 65nm Process Improvement Nov 2009 102201 Qualification of 72M High Density Programmable FIFO Device using LL65P-18R Technology Fabricated in UMC Fab Aug 2011 130905 Qualification of 72M High Density Programmable FIFO Device at ASE-Taiwan (G) Nov 2013 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 14 Document No.001-72248 Rev. *B ECN # 4502469 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify CYF0072V33L HD FIFO Device Family, UMC Fab 12A 65nm (LL65P-18R) Technology Marketing Part #: CYF0072V33L, etc. Device Description: 1.8V Commercial and Industrial available in 209-Ball FBGA (14 x 22 x 1.89 mm) Cypress Division: Cypress Semiconductor Corporation –Memory Products Division Overall Die (or Mask) REV Level (pre-requisite for qualification): What ID markings on Die: Rev. K 7C1553K TECHNOLOGY/FAB PROCESS DESCRIPTION – LL65P-18R Number of Metal Layers: 5+RDL Metal 1: Cu 0.18um Metal Composition: Metal 2: Cu 0.22um Metal 3: Cu 0.22um Metal 4: Cu 0.36um Metal 5: Cu 1.25um Metal 6 (RDL): Al 1.2um Passivation Type and Materials: 0.4um Oxide / 0.5um Nitride Free Phosphorus contents in top glass layer(%): 0% Number of Transistors in Device ~600M Number of Logic Gates in Device ~300M Generic Process Technology/Design Rule (µ-drawn): CMOS, 65nm Gate Oxide Material/Thickness (MOS): 19.5A Name/Location of Die Fab (prime) Facility: UMC Fab 12 Die Fab Line ID/Wafer Process ID: L65LL PACKAGE AVAILABILITY PACKAGE 209-Ball FBGA ASSEMBLY SITE FACILITY Amkor-Korea (GQ), ASE-Taiwan (G) Note: Package Qualification details upon request Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 14 Document No.001-72248 Rev. *B ECN # 4502469 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: BW209D 209-Ball Thin Ball Grid Array (FBGA) GE-100LFCS/ Nitto UL94, V-0 Oxygen Rating Index: N/A Substrate Material: BT resin Lead Finish, Composition / Thickness: SAC405 Die Backside Preparation Method/Metallization: Grinding Die Separation Method: Saw Die Attach Supplier: Hitachi Die Attach Material: FH-9011-20 Die Attach Method: Film Bond Diagram Designation: 001-57611 Wire Bond Method: Thermosonic Wire Material/Size: Au, 1.0 mil Thermal Resistance Theta JA °C/W: 59.06 C/W Package Cross Section Yes/No: Yes Assembly Process Flow: 49-10996 Name/Location of Assembly (prime) facility: Amkor Korea (GQ) MSL Level 3 Reflow Temperature 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-R Note: Please contact a Cypress Representative for other packages availability Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 14 Document No.001-72248 Rev. *B ECN # 4502469 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test High Temperature Operating Life Early Failure Rate High Temperature Operating Life Latent Failure Rate Pre/Post LFR AC/DC Char High Temperature Steady State Life Low Temperature Operating Life High Accelerated Saturation Test (HAST) Temperature Humidity Bias Test (THB) Temperature Cycle Pressure Cooker High Temperature Storage Electrostatic Discharge Human Body Model (ESD-HBM) Electrostatic Discharge Charge Device Model (ESD-CDM) Electrostatic Discharge Machine Model (ESD-MM) Soft Error (Alpha Particle) Soft Error (Neutron/Proton) Current Density Age Bond Strength Acoustic Microscopy Dynamic Latch- up Static Latch-up Test Condition (Temp/Bias) Dynamic Operating Condition, Boost Regulated at Core 1.45V, External 2.05V, 125°C, JESD22-A108 Dynamic Operating Condition, Boost Regulated at Core 1.45V, External 2.05V, 125°C /150°C, JESD22-A108 AC/DC Critical Parameter Char at LFR 80hrs, 500hrs & 1000hrs Static Operating Condition, Vcc Max= 2.25V, 150°C JESD22-A108 Dynamic Operating Condition, Vcc = 2.25V, -30°C JESD22-A108 JESD22-A110: 110°C, 2.05V/1.64V/3.6V, 85%RH 130°C, 2.25V, 85%RH Precondition: JESD22 Moisture Sensitivity MSL 3 192 Hrs, 30°C /60%RH+ Reflow, 260°C +0, -5°C JESD22-A101: 85°C, 85%RH, 2.25V Precondition: JESD22 Moisture Sensitivity MSL 3 192 Hrs, 30°C /60%RH+ Reflow, 260°C +0, -5°C MIL-STD-883, Method 1010, Condition B, -55°C to 125°C MIL-STD-883, Method 1010, Condition C, -65 to 150°C Precondition: JESD22 Moisture Sensitivity MSL 3 192 Hrs, 30°C /60%RH+ Reflow, 260°C +0, -5°C JESD22-A102: 121 C, 100%RH, 15 PSIG Precondition: JESD22 Moisture Sensitivity MSL 3 192 Hrs, 30°C /60%RH+ Reflow, 260°C +0, -5°C JESD22-A103: 150 C, no bias 2,000V/2,200V JEDEC EIA/JESD22-A114 200V, 500V, JESD22-C101 200V, JESD22-A115 JESD89 JESD89 Meets the Technology Device Level Reliability Specifications 200°C, 4HRS MIL-STD-883, Method 883-2011 J-STD-020 Precondition: JESD22 Moisture Sensitivity MSL 3 192 Hrs, 30°C /60%RH+ Reflow, 260°C +0, -5°C JESD78 125°C, ± 100mA, ± 140mA, ± 200mA 25°C, ± 100mA JESD78 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 14 Result P/F P P P P P P P P P P P P P P P P P P P P Document No.001-72248 Rev. *B ECN # 4502469 RELIABILITY FAILURE RATE SUMMARY Stress/Test Device Tested/ Device Hours # Fails Activation Energy Thermal 3 AF Failure Rate 1,503 Devices 0 N/A N/A 0 PPM 1,2 89,000 DHRs 0 0.7 170 1,2 1,075,256 DHRs 0 0.7 55 High Temperature Operating Life Early Failure Rate High Temperature Operating Life Long Term Failure Rate (150°C) High Temperature Operating Life Long Term Failure Rate (125°C) 12 FIT Note: 1. PPM is calculated using the QTP#102201 EFR Data only 2. FIT Rate is calculated using the QTP#091706 and QTP#102201 LFR data. 1 Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate.. 3 Thermal Acceleration Factor is calculated from the Arrhenius equation 2 E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. -5 k = Boltzmann's constant = 8.62x10 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 14 Document No.001-72248 Rev. *B ECN # 4502469 Reliability Test Data QTP #: 102201 Device Fab Lot # Assy Lot # Ass Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC, MSL3 7C451472AO 8938000 611024080 Korea-GQ COMP 15 0 CYF0072V33L(7C4S1472AO) 8021000 611106299 Korea-GQ COMP 15 0 CYF0072V33L(7C4S1472AO) 8021003 611106298 Korea-GQ COMP 15 0 STRESS: AGE BOND STRENGTH 7C451472AO 8938000 611024080 Korea-GQ COMP 3 0 CYF0072V33L(7C4S1472AO) 8021000 611106299 Korea-GQ COMP 3 0 CYF0072V33L(7C4S1472AO) 8021003 611106298 Korea-GQ COMP 3 0 7 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JEDEC EIA/JESD22-A114, 2,000V 7C451472AO 8938000 611024080 Korea-GQ COMP STRESS: ESD-HUMAN BODY CIRCUIT PER JEDEC EIA/JESD22-A114, 2,200V 7C451472AO 8938000 611024080 Korea-GQ COMP 7 0 CYF0072V33L(7C4S1472AO) 8021000 611106299 Korea-GQ COMP 6 0 Korea-GQ COMP 9 0 STRESS: ESD-CHARGE DEVICE MODEL, 200V 7C451472AO 8938000 611024080 STRESS: ESD-CHARGE DEVICE MODEL, 500V 7C451472AO 8938000 611024080 Korea-GQ COMP 6 0 CYF0072V33L(7C4S1472AO) 8021000 611106299 Korea-GQ COMP 9 0 STRESS: HI-ACCEL SATURATION TEST, 110C, 85%RH, 2.05V/1.64V/3.6V, PRE COND 192 HR 30C/60%RH, MSL3 7C451472AO 8938000 611024080 Korea-GQ 264 77 0 CYF0072V33L(7C4S1472AO) 8021000 611106299 Korea-GQ 264 72 0 STRESS: HIGH TEMPERATURE STORAGE, PLASTIC, 150C CYF0072V33L(7C4S1472AO) 8011010 611041953 Korea-GQ 500 80 0 CYF0072V33L(7C4S1472AO) 8011010 611041953 Korea-GQ 1000 80 0 CYF0072V33L(7C4S1472AO) 8021000 611106299 Korea-GQ 500 77 0 CYF0072V33L(7C4S1472AO) 8021000 611106299 Korea-GQ 1000 77 0 CYF0072V33L(7C4S1472AO) 8021000 611106299 Korea-GQ 1500 77 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 14 Document No.001-72248 Rev. *B ECN # 4502469 Reliability Test Data QTP #: 102201 Device Fab Lot # Assy Lot # Ass Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 2.05V CYF0072V33L(7C4S1472AO) 8011010 611041953 Korea-GQ 96 480 0 CYF0072V33L(7C4S1472AO) 8021000 611106299 Korea-GQ 96 494 0 CYF0072V33L(7C4S1472AO) 8021003 611106298 Korea-GQ 96 470 0 CYF0072V33L(7C4S1472AO) 8021003 611106300 Korea-GQ 96 59 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 2.05V CYF0072V33L(7C4S1472AO) 8011010 611041953 Korea-GQ 168 241 0 CYF0072V33L(7C4S1472AO) 8011010 611041953 Korea-GQ 1000 241 0 CYF0072V33L(7C4S1472AO) 8021000 611106299 Korea-GQ 168 178 0 CYF0072V33L(7C4S1472AO) 8021000 611106299 Korea-GQ 1000 177 0 CYF0072V33L(7C4S1472AO) 8021003 611106298 Korea-GQ 168 178 0 CYF0072V33L(7C4S1472AO) 8021003 611106298 Korea-GQ 1000 177 0 STRESS: PRESSURE COOKER TEST, 121C, 100%RH, 15 Psig, PRE COND 192 HR 30C/60%RH, MSL3 7C451472AO 8938000 611024080 Korea-GQ 168 79 0 7C451472AO 8938000 611024080 Korea-GQ 288 79 0 CYF0072V33L(7C4S1472AO) 8021000 611106299 Korea-GQ 168 75 0 CYF0072V33L(7C4S1472AO) 8021000 611106299 Korea-GQ 288 72 0 COMP 6 0 COMP 6 0 STRESS: STATIC LATCH-UP TESTING, 125C, 2.85V, 2.37V, 5.4V +/-100mA 7C451472AO 8938000 611024080 Korea-GQ STRESS: STATIC LATCH-UP TESTING, 125C, 3.14V, 2.6V1, 5.94V, +/-140mA CYF0072V33L(7C4S1472AO) 8021000 611106299 Korea-GQ STRESS: TEMPERATURE CYCLE COND. B -55C TO 125C, PRE COND 192 HRS 30C/60%RH, MSL3 7C451472AO 8938000 611024080 Korea-GQ 500 79 0 7C451472AO 8938000 611024080 Korea-GQ 1000 78 0 CYF0072V33L(7C4S1472AO) 8021000 611106299 Korea-GQ 500 75 0 CYF0072V33L(7C4S1472AO) 8021000 611106299 Korea-GQ 1000 74 0 CYF0072V33L(7C4S1472AO) 8021003 611106298 Korea-GQ 500 77 0 CYF0072V33L(7C4S1472AO) 8021003 611106298 Korea-GQ 1000 77 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 14 Document No.001-72248 Rev. *B ECN # 4502469 Reliability Test Data QTP #: 091706 Device Fab Lot # Assy Lot # Ass Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC, MSL3 CY7C1514KV18 (7C1553K) 8842022 610851583 TAIWN-G COMP 15 0 CY7C1514KV18 (7C1553K) 8844020 610854240 TAIWN-G COMP 15 0 CY7C1514KV18 (7C1553K) 8844022 610906896 TAIWN-G COMP 15 0 STRESS: AGE BOND STRENGTH CY7C1514KV18 (7C1553K) 8842022 610851583 TAIWN-G COMP 5 0 CY7C1514KV18 (7C1553K) 8844020 610854240 TAIWN-G COMP 5 0 CY7C1514KV18 (7C1553K) 8844022 610906896 TAIWN-G COMP 5 0 610417278 CML-R COMP 3 0 STRESS: DYNAMIC LATCH-UP CY7C1470V33 (7C1470A) 4321389 STRESS: ESD-HUMAN BODY CIRCUIT PER JEDEC EIA/JESD22-A114, 2,200V CY7C1514KV18 (7C1553K) 8842022 610852338 TAIWN-G COMP 8 0 CY7C1514KV18 (7C1553K) 8844020 610854240 TAIWN-G COMP 8 0 CY7C1514KV18 (7C1553K) 8844022 610906896 TAIWN-G COMP 8 0 CY7C1514KV18 (7C1553K) 8844021 610908348 TAIWN-G COMP 8 0 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY7C1514KV18 (7C1553K) 8842022 610852338 TAIWN-G COMP 9 0 CY7C1514KV18 (7C1553K) 8844020 610854240 TAIWN-G COMP 9 0 CY7C1514KV18 (7C1553K) 8844022 610906896 TAIWN-G COMP 9 0 610852338 TAIWN-G COMP 5 0 STRESS: ESD-MACHINE MODEL, 200V CY7C1514KV18 (7C1553K) 8842022 STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 2.25V, PRE COND 192 HR 30C/60%RH, MSL3 CY7C1514KV18 (7C1553K) 8844020 610854240 TAIWN-G 128 78 0 CY7C1514KV18 (7C1553K) 8844022 610906896 TAIWN-G 128 77 0 1000 70 0 336 77 0 STRESS: HIGH TEMPERATURE STORAGE, PLASTIC, 150C CY7C1514KV18 (7C1553K) 8844020 610851583 TAIWN-G STRESS: HIGH TEMP STEADY STATE LIFE TEST, 150C, 2.25V, Vcc Max CY7C1514KV18 (7C1553K) 8844020 610854240 TAIWN-G Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 14 Document No.001-72248 Rev. *B ECN # 4502469 Reliability Test Data QTP #: 091706 Device Fab Lot # Assy Lot # Ass Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, BOOST REGULATED AT CORE 1.45V, EXTERNAL 2.05V CY7C15631KV18 (7C1553K) 8908001 610920385 TAIWN-G 96 2367 0 CY7C15631KV18 (7C1553K) 8912000 610920386 TAIWN-G 96 2217 0 CY7C15631KV18 (7C1553K) 8910015 610920548 TAIWN-G 96 1321 0 178 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 150C, BOOST REGULATED AT CORE 1.45V, EXTERNAL 2.05V CY7C1514KV18 (7C1553K) 8844021 610908348 TAIWN-G 500 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, BOOST REGULATED AT CORE 1.45V, EXTERNAL 2.05V CY7C1514KV18 (7C1553K) 8844020 610854240 TAIWN-G 1000 178 0 CY7C1514KV18 (7C1553K) 8844022 610906896 TAIWN-G 1000 178 0 STRESS: LOW TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, -30C, 2.25V Vcc CY7C1514KV18 (7C1553K) 8842022 610852338 TAIWN-G 500 45 0 STRESS: PRESSURE COOKER TEST, 121C, 100%RH, 15 Psig, PRE COND 192 HR 30C/60%RH, MSL3 CY7C1514KV18 (7C1553K) 8842022 610851583 TAIWN-G 168 76 0 CY7C1514KV18 (7C1553K) 8844020 610854240 TAIWN-G 168 78 0 CY7C1514KV18 (7C1553K) 8844022 610906896 TAIWN-G 168 77 0 STRESS: Pre-/ Post HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE CHAR CY7C1514KV18 (7C1553K) 8844020 610854240 TAIWN-G COMP 10 0 STRESS: STATIC LATCH-UP TESTING, 125C, 3.42V, +/-240mA CY7C1514KV18 (7C1553K) 8844020 610854680 TAIWN-G COMP 9 0 CY7C1514KV18 (7C1553K) 8844022 610906896 TAIWN-G COMP 9 0 CY7C1514KV18 (7C1553K) 8844021 610908348 TAIWN-G COMP 9 0 CY7C15631KV18 (7C1553K) 8911000 610922436 TAIWN-G COMP 9 0 STRESS: TEMPERATURE CYCLE COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3 CY7C1514KV18 (7C1553K) 8842022 610851583 TAIWN-G 1000 77 0 CY7C1514KV18 (7C1553K) 8844020 610854240 TAIWN-G 1000 78 0 CY7C1514KV18 (7C1553K) 8844022 610906896 TAIWN-G 1000 77 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 14 Document No.001-72248 Rev. *B ECN # 4502469 Reliability Test Data QTP #: 091706 Device Fab Lot # Assy Lot # Ass Loc Duration Samp Rej Failure Mechanism STRESS: STRESS: TEMPRATURE HUMIDITY TEST, 85C, 85%RH, 2.25V, PRE COND 192 HR 30C/60%RH, MSL3 CY7C1514KV18 (7C1553K) 8842022 610851583 TAIWN-G 1000 77 0 0 STRESS: SER – ALPHA PARTICLE, 3-TEPM, 3-VOLTAGE, @ 85C, Vcc Nom CY7C1514KV18 (7C1553K) 8842022 610851583 TAIWN-G COMP 3 610851583 TAIWN-G COMP 1WF STRESS: X-SECTION/STEM XY AUDIT CY7C1514KV18 (7C1553K) 8842022 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 14 Document No.001-72248 Rev. *B ECN # 4502469 Reliability Test Data QTP #: 093202 Device Fab Lot # Assy Lot # Ass Loc Duration Samp Rej Failure Mechanism STRESS: ESD-HUMAN BODY CIRCUIT PER JEDEC EIA/JESD22-A114, 2,200V CY7C15631KV18 (7C1553K) 8911000 610922435 TAIWN-G COMP 8 0 1000 80 0 STRESS: HIGH TEMPERATURE STORAGE, PLASTIC, 150C CY7C15631KV18 (7C1553K) 8911000 610922435 TAIWN-G STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, BOOST REGULATED AT CORE 1.45V, EXTERNAL 2.05V CY7C15631KV18 (7C1553K) 8912000 610921675 TAIWN-G 96 596 0 CY7C15631KV18 (7C1553K) 8910015 610921676 TAIWN-G 96 711 0 CY7C15631KV18 (7C1553K) 8911000 610922435 TAIWN-G 96 1795 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, BOOST REGULATED AT CORE 1.45V, EXTERNAL 2.05V CY7C15631KV18 (7C1553K) 8912000 610921675 TAIWN-G 168 190 0 CY7C15631KV18 (7C1553K) 8911000 610922435 TAIWN-G 500 184 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 14 Document No.001-72248 Rev. *B ECN # 4502469 Reliability Test Data QTP #: 130905 Device Fab Lot # Assy Lot # Ass Loc Duration Samp Rej Failure Mechanism STRESS: ESD-HUMAN BODY CIRCUIT PER JEDEC EIA/JESD22-A114, 2,200V CYF0072V33L (7C4S1472A) 8222000 611240710 TAIWN-G COMP 8 0 611240710 TAIWN-G COMP 6 0 TAIWN-G COMP 9 0 STRESS: STATIC LATCH-UP, 100mA, 25°C CYF0072V33L (7C4S1472A) 8222000 STRESS: ESD-CHARGE DEVICE MODEL, 500V CYF0072V33L (7C4S1472A) 8222000 611240710 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 13 of 14 Document No.001-72248 Rev. *B ECN # 4502469 Document History Page Document Title: QTP 102201: 72 MEG HIGH DENSITY PROGRAMMABLE FIFO FAMILY (CYF0072V33L), 65NM (LL65P-18R) TECHNOLOGY, UMC FAB 12A Document Number: 001-72248 Rev. ECN Orig. of No. Change ** 3349360 NSR *A 4196963 JYF *B 4502469 JYF Description of Change Initial spec release. Added CYFB0072V33L and CYFB0072V18L in the device coverage; Template alignment & addition of 72M HD FIFO qualification data at ASE-Taiwan (QTP# 130905). Sunset review: Updated QTP title page for template alignment. Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 14 of 14