PHILIPS BGF844

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D737
BGF844
GSM800 EDGE power module
Product specification
Supersedes data of 2003 Feb 26
2003 Jun 06
Philips Semiconductors
Product specification
GSM800 EDGE power module
BGF844
FEATURES
PINNING - SOT365C
• Typical GSM EDGE performance at a supply voltage of
26 V:
PIN
– Output power = 2.5 W
– Gain = 30 dB
– Efficiency = 16%
DESCRIPTION
1
RF input
2
VS
3
RF output
Flange
– ACPR < −65 dBc at 400 kHz
ground
– rms EVM < 0.4%
– peak EVM < 1.2%
• Low distortion to a GSM EDGE signal
• Excellent 2-tone performance
• Low die temperature due to copper flange
1
• Integrated temperature compensated bias
• 50 Ω input/output impedance
23
Top view
MBL257
• Flat gain over frequency band.
Fig.1 Simplified outline.
APPLICATIONS
• Base station RF power amplifiers in the 869 to 894 MHz
frequency range
• GSM, GSM EDGE, multi carrier applications
• Macrocell (driver stage) and Microcell (final stage).
DESCRIPTION
23 W LDMOS power amplifier module for base station
amplifier applications in the 869 to 894 MHz band.
QUICK REFERENCE DATA
Typical RF performance at Tmb = 25 °C.
MODE OF OPERATION
CW
GSM EDGE
f
(MHz)
VS
(V)
PL
(W)
Gp
(dB)
η
(%)
ACPR
(dBc)
rms EVM
(%)
869 to 894
26
23
29
50
−
−
16
−65(1)
0.4
869 to 894
26
2.5
Note
1. ACPR 400 kHz at 30 kHz resolution bandwidth.
2003 Jun 06
2
30
Philips Semiconductors
Product specification
GSM800 EDGE power module
BGF844
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VS
DC supply voltage
−
30
V
PD
input drive power
−
100
mW
PL
load power
−
27
W
Tstg
storage temperature
−30
+100
°C
Tmb
operating mounting base temperature
−20
+90
°C
CHARACTERISTICS
Tmb = 25 °C; VS = 26 V; PL = 2.5 W; f = 869 to 894 MHz; ZS = ZL = 50 Ω; unless otherwise specified.
SYMBOL
PARAMETER
IDQ
quiescent current (pin 2)
CONDITIONS
PD = 0 mW
MIN.
TYP.
MAX.
UNIT
245
280
320
mA
Gp
power gain
28
30
32
dB
∆Gp freq
gain flatness over frequency
range
−
0.2
1
dB
∆Gp pwr
gain flatness over power band PL = 25 mW up to 2.5 W
−0.8
−0.2
+0.2
dB
GOB
out of band gain
−
−
GPi max + 1 dB
note 1
VSWRin
input VSWR
−
1.6 : 1
2:1
IMDr
reverse intermodulation
−
−67
−64
dBc
H2
second harmonic
−
−38
−34
dBc
H3
third harmonic
−
−61
−58
dBc
small signal, PD = 0 dBm;
f < 869 MHz, f > 894 MHz
fi = fc ±200 kHz;
Pcarrier = 2.5 W;
Pinterference = −40 dBc;
stability
VSWR ≤ 3 : 1 through all
phases; VS2 = 25 to 28 V
ruggedness
VSWR = 10 : 1 through all
phases; PL = 5 W
all spurious outputs more than 60 dB
below desired signal
no degradation in output power
EDGE (PL = 2.5 W average)
η
efficiency
SR200
spectral regrowth;
EDGE GSM signal
SR400
SR600
13
16
−
%
200 kHz
−
−36
−35
dBc
400 kHz
−
−65
−63
dBc
600 kHz
−
−75
−73
dBc
EVMrms
rms EDGE signal distortion
−
0.4
1.2
%
EVMM
peak EDGE signal distortion
−
1.2
4
%
Intermodulation distortion (PL = 2.5 W average)
d3
third order intermodulation
−
−45
−
dBc
d5
fifth order intermodulation
−
−52
−
dBc
d7
seventh order intermodulation
−
−60
−
dBc
carrier spacing = 200 kHz
Note
1. GPi is small signal in-band gain.
2003 Jun 06
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Philips Semiconductors
Product specification
GSM800 EDGE power module
BGF844
MBL772
η
Gp
(dB)
MBL773
−58
ACPR
(dBc)
48
30
handbook, halfpage
handbook, halfpage
η
(%)
−60
36
29.6
Gp
−62
24
29.2
−64
28.8
12
−66
−68
0
28.4
0
4
8
12
16
20
PL (AV)(W)
0
2
4
6
8
10
12
PL (AV) (W)
Fig.3
f = 882 MHz.
Fig.2
f = 882 MHz.
GSM EDGE power gain and efficiency as
functions of load power; typical values.
Fig.3
MBL774
4
GSM EDGE ACPR at 400 kHz as a function
of load power; typical values.
MBL775
12
EVM
(%)
handbook, halfpage
handbook, halfpage
EVM
(%)
10
3
8
2
6
4
1
2
0
0
0
2
4
6
8
10
12
0
2
PL (AV) (W)
f = 882 MHz.
f = 882 MHz.
Fig.4
Fig.5
GSM EDGE rms EVM as a function of
average load power; typical values.
2003 Jun 06
4
4
6
8
10
12
PL (AV) (W)
GSM EDGE peak EVM as function of
average load power; typical values.
Philips Semiconductors
Product specification
GSM800 EDGE power module
BGF844
MBL776
30.4
Gp
(dB)
30
handbook, halfpage
η
(%)
η
MBL777
30
60
handbook, halfpage
48
η
Gp
(dB)
η
(%)
48
29.6
29.6
36
Gp
36
29.2
29.2
24
28.8
12
24
Gp
28.8
12
0
28.4
0
8
16
24
28.4
32
0
0
4
8
12
PL (W)
PL (W)
f = 882 MHz.
f1 = 882 MHz; f2 = 883 MHz.
Fig.6
Fig.7
CW gain power and efficiency as functions
of load power; typical values.
MBL778
−20
MBL779
handbook, halfpage
s21
(dB)
dim
(dBc)
−30
−50
d7
−60
4
8
s11
0
s11
(dB)
−6
s11
d5
−40
s21
28
d3
0
Two tone gain power and efficiency as
functions of load power; typical values.
30
handbook, halfpage
−70
16
26
−12
24
−18
22
−24
20
750
12
16
PL (AV) (W)
850
950
f (kHz)
−30
1050
f1 = 882 MHz; f2 = 883 MHz.
Fig.8
Two tone intermodulation distortion as a
function of average load power; typical
values.
2003 Jun 06
Fig.9 s-parameters as a function of frequency.
5
Philips Semiconductors
Product specification
GSM800 EDGE power module
BGF844
MOUNTING RECOMMENDATIONS
CAUTION
General
During the following procedures ESD precautions should
be taken to protect the device from electrostatic damage.
LDMOST base station modules are manufactured with the
dies directly mounted onto a copper flange. The matching
and bias circuit components are mounted on a
printed-circuit board (PCB), which is also soldered onto
the copper flange. The dies and the PCB are encapsulated
in a plastic cap, and pins extending from the module
provide a means of electrical connection. This construction
allows the module to withstand a limited amount of flexing,
although bending of the module is to be avoided as much
as possible. Mechanical stress can occur if the bottom
surface of the module and the surface of the amplifier
casing (external heatsink) are not mutually flat. This,
therefore, should be a consideration when mounting the
module in the amplifier. Another cause of mechanical
stress can arise from thermal mismatch after soldering of
the pins. Precautions should be taken during soldering,
and efforts made to ensure a good thermal contact
between the flange and the external heatsink.
PROCEDURE
1. Apply a thin, evenly spread layer of thermal compound
to the module flange bottom surface. Excessive use of
thermal compound may result in increased thermal
resistance and possible bending of the of the flange.
Too little thermal compound will result in an increase
in thermal resistance.
2. Take care that there is some space between the cap
and the PCB. Bring the module into contact with the
external heatsink casing, ensuring that there is
sufficient space for excessive thermal compound to
escape.
3. Carefully align the module with the heatsink casing
mounting holes, and secure with two 3 mm bolts and
two flat washers. Initially tighten the bolts to “finger
tight” (approximately 0.05 Nm). Using a torque
wrench, tighten each bolt in alternating steps to a final
torque of 0.4 Nm.
External heatsink (amplifier casing)
The module should always be mounted on a heatsink with
a low thermal resistance to keep the module temperature
as low as possible. The mounting area of the heatsink
should be flat and free from burrs and loose particles.
We recommend a flatness for the mounting area of
between 50 µm concave and 50 µm convex. The 50 µm
concave value is to ensure optimal thermal behaviour,
while the 50 µm convex value is intended to limit
mechanical stress due to bending.
4. After the module is secured to the casing, the module
leads may be soldered to the PCB. The leads are for
electrical connection only, and should not be used to
support the module at any time in the assembly
process.
In order to ensure optimal thermal behaviour, the use of
thermal compound is recommended when mounting the
module onto the amplifier external heatsink.
Electrical connections
A soldering iron may be used up to a temperature of
250 °C for a maximum of 10 seconds. Avoid contact
between the soldering iron and the plastic cap.
The main ground path of all modules is via the flange. It is
therefore important that the flange is well grounded and
that return paths are kept as short as possible.
An incorrectly grounded flange can result in a loss of
output power or in oscillation.
The following recommended thermal compounds have a
thermal conductivity of >0.5 W/mK:
• WPS II (silicone-free) from Austerlitz-Electronics
• Comp. Trans. from KF
The RF input and output of the module are designed for
50 Ω connections.
• 340 from Dow Corning
• Trans-Heat from E. Friis-Mikkelsen.
Incoming inspection
The use of thermal pads instead of thermal compound is
not recommended as the pads may not maintain a uniform
flatness over a period of time.
When incoming inspection is performed, use a properly
designed test fixture to avoid excessive mechanical stress
and to ensure optimal RF performance. Philips can deliver
dedicated test fixtures on request.
Mounting
PREPARATION
Ensure that the surface finishes are free from burrs, dirt
and grease.
2003 Jun 06
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Philips Semiconductors
Product specification
GSM800 EDGE power module
BGF844
APPLICATION INFORMATION
handbook, halfpage
TEMPERATURE
COMPENSATED
GATE BIAS
C1
C2
C3
C4
+
Z1
R1
L1 Z2
C5
50 Ω
input
VS
MBL781
50 Ω
output
Fig.10 Test circuit.
List of components (see Figs 10 and 11)
COMPONENT
DESCRIPTION
VALUE
C1, C3
multilayer X7R ceramic chip capacitor
100 nF; 50 V
C2, C5
tantalum SMD capacitor
10 µF; 35 V
C4
electrolytic capacitor
100 µF; 35 V
L1
grade 4S2 Ferroxcube bead
R1
metal film resistor
10 Ω; 0.4 W
Z1, Z2
stripline; note 1
50 Ω
CATALOGUE
NUMBER
4330 030 36300
2322 195 13109
Note
1. The striplines are on a double copper-clad printed-circuit board (RO5880) with εr = 2.2 and thickness = 0.79 mm.
2003 Jun 06
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Philips Semiconductors
Product specification
GSM800 EDGE power module
BGF844
90
handbook, full pagewidth
42
C5
L1
R1
output
50 Ω
C4
Z2
Z1
C3
C2
C1
DUT
MBL780
Dimensions in mm.
Fig.11 Printed-circuit board and component layout.
2003 Jun 06
8
input
50 Ω
Philips Semiconductors
Product specification
GSM800 EDGE power module
BGF844
PACKAGE OUTLINE
Plastic rectangular single-ended flat package; flange mounted; 2 mounting holes; 3 in-line leads
SOT365C
D
A
F
y
U
q
A
U3
U2
p
E
L
1
2
3
b
e1
U1
w M
e
0
c
v A
Z
Q
10
20 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
c
D
E
mm
9.5
9.0
0.56
0.46
0.3
0.2
30.1
29.9
18.6
18.4
OUTLINE
VERSION
e
F
L
p
Q
3.3
3.1
3.7
3.3
3.55
3.45
4.0
3.8
e1
2.54 20.32
REFERENCES
IEC
JEDEC
JEITA
U
41.75 48.4
41.65 48.0
U1
U2
U3
v
w
y
Z
15.4
15.2
7.75
7.55
1.1
0.0
0.3
0.25
0.1
12.8
12.6
EUROPEAN
PROJECTION
ISSUE DATE
01-06-06
02-11-13
SOT365C
2003 Jun 06
q
9
Philips Semiconductors
Product specification
GSM800 EDGE power module
BGF844
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
I
Objective data
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Jun 06
10
Philips Semiconductors
Product specification
GSM800 EDGE power module
BGF844
NOTES
2003 Jun 06
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
SCA75
© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/07/pp12
Date of release: 2003
Jun 06
Document order number:
9397 750 11507