MICROWAVE POWER GaAs FET TIM5964-35SLA-251 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION HIGH EFFICIENCY ηadd=39% at 5.9 to 6.75GHz IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level HIGH POWER P1dB=45.5dBm at 5.9GHz to 6.75GHz HIGH GAIN G1dB=8.5dB at 5.9GHz to 6.75GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°°C ) CHARACTERISTICS SYMBOL CONDITION UNIT MIN. TYP. MAX. dBm 45.0 45.5 dB 8.0 9.0 IDS1 A 8.0 9.0 ∆G dB ±0.8 Power Added Efficiency ηadd % 39 3rd Order Intermodulation Distortion IM3 Two Tone Test Po=35.0dBm dBc -42 -45 Drain Current IDS2 (Single Carrier Level) A 8.0 9.0 Channel Temperature Rise ∆Tch VDS X IDS X Rth(c-c) °C Recommended gate resistance(Rg) : Rg=Rg1(10 Ω)+ +Rg2(18 Ω)= 28 Ω (MAX.) 100 Output Power at 1dB Compression Point P1dB Power Gain at 1dB Compression Point G1dB Drain Current Gain Flatness VDS= 10V f = 5.9 – 6.75GHz ELECTRICAL CHARACTERISTICS ( Ta= 25°°C ) CHARACTERISTICS Transconductance Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO CONDITION VDS= 3V IDS= 10.5A VDS= 3V IDS= 140mA VDS= 3V VGS= 0V IGS= -420µA Rth(c-c) Channel to Case Pinch-off Voltage SYMBOL gm VGSoff UNIT MIN. mS TYP. MAX. 6500 V -1.0 -2.5 -4.0 A 20 26 V -5 °C/W 1.0 1.3 The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Revised Aug. 2000 TIM5964-35SLA-251 ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS ( Ta= 25°°C ) SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 26 Total Power Dissipation (Tc= 25 °C) PT W 115 Channel Temperature Tch °C 175 Storage Tstg °C -65 ∼ +175 PACKAGE OUTLINE (2-16G1B) 0.7±0.15 2.5 MIN. Unit in mm 8.0±0.2 c d 2.5 MIN. 2.6±0.3 d c Gate d Source e Drain 17.4±0.4 4 – C1.0 e 20.4±0.3 5.5 MAX. 2.4±0.3 0.2 MAX. 16.4 MAX. 1.4±0.3 +0.1 0.1 -0.05 24.5 MAX. HANDLING PRECAUTIONS FOR PACKAGED TYPE Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°°C. 2 TIM5964-35SLA-251 RF PERFORMANCES Output Power vs. Frequency 48 VDS= 10 V IDS≅ 8 A Pin= 36.5 dBm Po(dBm) 47 46 45 44 43 5.75 6.00 6.25 6.50 Frequency (GHz) 6.75 Output Power vs. Input Power 48 100 f=6.75 GHz VDS= 10 V IDS≅ 8 A 47 90 46 80 Po 70 44 60 43 50 ηadd 42 40 41 30 40 20 39 10 29 31 33 35 Pin(dBm) 3 37 39 ηadd(%) Po(dBm) 45 TIM5964-35SLA-251 POWER DISSIPATION vs. CASE TEMPERATURE 120 PT(W) 100 80 60 40 20 0 0 40 80 120 160 200 Tc(°°C) IM3 vs. OUTPUT POWER CHARACTERISTICS -10 VDS= 10 V IDS≅ 8 A f= 6.325GHz ∆f= 5MHz IM3(dBc) -20 -30 -40 -50 -60 30 32 34 36 38 Po(dBm), Single Carrier Level 4 40