TOSHIBA TIM1213-4L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band) Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level • High power - P1dB = 36.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 7.5 dB at 12.7 GHz to 13.2 GHz • Broad band internally matched • Hermetically sealed package RF Performance Specifications (Ta = 25° C) Characteristics Symbol Condition Unit Min. Typ. Max dBm 35.5 36.5 – dB 6.5 7.5 – A – 1.7 2.2 Output Power at 1dB Compression Point P1dB Power Gain at 1dB Compression Point G1dB Drain Current IDS1 Gain Flatness ∆G dB – – ±0.8 Power Added Efficiency ηadd % – 24 – 3rd Order Intermodulation Distortion IM3 dBc -42 -45 – A – 1.7 2.2 °C – – 70 Drain Current IDS2 Channel-Temperature Rise ∆Tch VDS = 9V f = 12.7 ~ 13.2 GHz Note 1 VDSxIDSxRth(c-c) Note 1: 2 Tone Test (Pout = 25 dBm Single Carrier Level). Electrical Characteristics (Ta = 25° C) Characteristic Symbol Condition Unit Min. Typ. Max gm VDS = 3V IDS = 2.0A mS – 1200 – VGSoff VDS = 3V IDS = 60mA V -2 -3.5 -5 Saturated Drain Current IDSS VDS = 3V VGS = 0V A – 4.0 5.2 Gate-Source Breakdown Voltage VGSO IGS = -60µA V -5 – – Rth (c-c) Channel to case °C/W – 2.9 3.5 Trans-conductance Pinch-off Voltage Thermal Resistance The information contained here is subject to change without notice. The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic equipments (office equipment, communication equipment, measuring equipment, domestic electrification, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equipments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, traffic signal, combustion control, all types of safety devices, etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA. TOSHIBA CORPORATION MW50230196 1/4 TIM1213-4L Absolute Maximum Ratings (Ta = 25° C) Characteristic Symbol Unit Rating Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 5.2 Total Power Dissipation (Tc = 25°C) PT W 30 Channel Temperature Tch ˚C 175 Storage Temperature Tstg ˚C -65~175 Package Outline (2-9D1A) Handling Precautions for Packaged Type Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. 2/4 MW50230196 TOSHIBA CORPORATION TIM1213-4L RF Performances TOSHIBA CORPORATION MW50230196 3/4 TIM1213-4L Power Dissipation vs. Case Temperature IM3 vs. Output Power Characteristics 4/4 MW50230196 TOSHIBA CORPORATION