SSM6L16FE TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L16FE High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low on-resistance Q1: Ron = 4 Ω (max) (@VGS = 2.5 V) Q2: Ron = 12 Ω (max) (@VGS = −2.5 V) Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ±10 V DC ID 100 Pulse IDP 200 Drain current mA 1: Source1 2: Gate1 3: Drain2 4: Source2 5: Gate2 6: Drain1 Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -20 V Gate-Source voltage VGSS ±10 V DC ID -100 Pulse IDP -200 Drain current mA JEDEC ― JEITA ― TOSHIBA 2-2N1D Absolute Maximum Ratings (Q1, Q2 Common) (Ta = 25°C) Characteristics Symbol Rating Unit PD (Note 1) 150 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Drain power dissipation (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating, mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.135 mm × 6) 0.45 mm 0.3 mm 1 2007-11-01 SSM6L16FE Marking 6 Equivalent Circuit (top view) 5 4 6 2 4 Q1 K6 1 5 Q2 3 1 2 3 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 2 2007-11-01 SSM6L16FE Q1 Electrical Characteristics (Ta = 25°C) Characteristic Symbol MAX. UNIT ⎯ ⎯ ±1 μA V (BR) DSS ID = 0.1 mA, VGS = 0 20 ⎯ ⎯ V IDSS VDS = 20 V, VGS = 0 ⎯ ⎯ 1 μA Vth VDS = 3 V, ID = 0.1 mA 0.6 ⎯ 1.1 V ⎪Yfs⎪ VDS = 3 V, ID = 10 mA 40 ⎯ ⎯ mS ID = 10 mA, VGS = 4 V ⎯ 1.5 3.0 ID = 10 mA, VGS = 2.5 V ⎯ 2.2 4.0 ID = 1 mA, VGS = 1.5 V ⎯ 5.2 15 ⎯ 9.3 ⎯ pF ⎯ 4.5 ⎯ pF ⎯ 9.8 ⎯ pF ⎯ 70 ⎯ ⎯ 125 ⎯ Gate threshold voltage Forward transfer admittance RDS (ON) Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Switching time TYP. VGS = ±10 V, VDS = 0 Drain cut-off current Drain-Source on-resistance MIN. IGSS Gate leakage current Drain-Source breakdown voltage Test Condition Turn-on time ton Turn-off time toff VDS = 3 V, VGS = 0, f = 1 MHz VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V Ω nS Switching Time Test Circuit (a) Test circuit 2.5 V OUT IN 50 Ω 0 10 μs VDD = 3 V Duty < = 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C (b) VIN RL VDD 2.5 V 0V (c) VOUT 90% 10% VDD 10% 90% VDS (ON) tr ton tf toff Precaution Vth can be expressed as the voltage between the gate and source when the low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Be sure to take this into consideration when using the device. 3 2007-11-01 SSM6L16FE Q2 Electrical Characteristics (Ta = 25°C) Characteristic Symbol MAX. UNIT ⎯ ⎯ ±1 μA V (BR) DSS ID = −0.1 mA, VGS = 0 −20 ⎯ ⎯ V IDSS VDS = −20 V, VGS = 0 ⎯ ⎯ −1 μA Gate threshold voltage Forward transfer admittance Vth VDS = −3 V, ID = −0.1 mA −0.6 ⎯ −1.1 V ⎪Yfs⎪ VDS = −3 V, ID = −10 mA 25 ⎯ ⎯ mS ID = −10 mA, VGS = −4 V ⎯ 6 8 ID = −10 mA, VGS = −2.5 V ⎯ 8 12 ID = −1 mA, VGS = −1.5 V ⎯ 18 45 ⎯ 11 ⎯ pF ⎯ 3.7 ⎯ pF ⎯ 10 ⎯ pF ⎯ 130 ⎯ ⎯ 190 ⎯ RDS (ON) Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Switching time TYP. VGS = ±10 V, VDS = 0 Drain cut-off current Drain-Source on-resistance MIN. IGSS Gate leakage current Drain-Source breakdown voltage Test Condition Turn-on time ton Turn-off time toff VDS = −3 V, VGS = 0, f = 1 MHz VDD = −3 V, ID = − 10 mA, VGS = 0 ~ −2.5 V Ω ns Switching Time Test Circuit (a) Test circuit 0 OUT (b) VIN 0V 10% IN 50 Ω −2.5V 10 μs VDD 90% −2.5 V RL (c) VOUT VDD = −3 V Duty < = 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C VDS (ON) 90% 10% VDD tr ton tf toff Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth.(The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Please take this into consideration when using the device. 4 2007-11-01 SSM6L16FE Q1 (N-ch MOSFET) ID – VDS ID – VGS 250 1000 Common source 2.5 Common source Ta = 25°C VDS = 3 V 10 (mA) 2.3 2.1 ID 1.9 150 Drain current Drain current ID (mA) 200 4 3 1.7 100 1.5 50 100 Ta = 100°C 10 25°C −25°C 1 0.1 VGS = 1.3 V 0 0 0.5 1 1.5 Drain-Source voltage 0.01 0 2 1 VDS (V) Gate-Source voltage RDS (ON) – ID 12 2 VGS (V) RDS (ON) – VGS 6 Common source Common source Ta = 25°C ID = 10 mA 5 Drain-Source on-resistance RDS (ON) (Ω) Drain-Source on-resistance RDS (ON) (Ω) 10 8 VGS = 1.5 V 6 4 2.5 V 2 4 3 Ta = 100°C 2 25°C 1 −25°C 4V 0 1 10 100 0 0 1000 2 4 RDS (ON) – Ta 2 Vth (V) VGS = 1.5 V, ID = 1 mA Gate threshold voltage Drain-Source on-resistance RDS (ON) (Ω) Common source 4 2.5 V, 10 mA 0 −25 4 V, 10 mA 0 25 50 75 8 10 VGS (V) Vth – Ta 8 2 6 Gate-Source voltage Drain current ID (mA) 6 3 100 125 1.6 1.2 0.8 0.4 0 −25 150 Ambient temperature Ta (°C) Common source ID = 0.1 mA VDS = 3 V 0 25 50 75 100 125 150 Ambient temperature Ta (°C) 5 2007-11-01 SSM6L16FE Q1 (N-ch MOSFET) ⎪Yfs⎪ – ID IDR – VDS 250 300 Common source VDS = 3 V Ta = 25°C 100 Drain reverse current IDR (mA) Forward transfer admittance ⎪Yfs⎪ (mS) 500 50 30 10 5 3 1 1 10 100 200 150 D IDR G S 100 50 0 0 1000 Common source VGS = 0 V Ta = 25°C −0.2 Drain current ID (mA) −0.4 −0.6 Drain-Source voltage −1 VDS −1.2 −1.4 (V) t – ID C – VDS 100 5000 Common source VDD = 3 V VGS = 0~2.5 V Ta = 25°C 3000 50 30 (pF) Switching time t (ns) toff 10 Capacitance C −0.8 Ciss Coss 5 3 Crss Common source 1 VGS = 0 V f = 1 MHz 0.5 Ta = 25°C 0.3 0.1 0.3 0.5 1000 500 100 ton 50 30 1 3 5 Drain-Source voltage 10 30 50 100 10 0.1 VDS (V) tf 300 tr 1 10 100 Drain current ID (mA) 6 2007-11-01 SSM6L16FE Q2 (P-ch MOSFET) ID – VDS ID – VGS -250 -1000 -150 -2.7 (mA) -3 VDS = -3 V -2.5 ID -200 Common SOurce Ta = 25°C -4 Drain current Drain current ID (mA) Common Source -10 -2.3 -100 -2.1 -1.9 -50 -1.7 -100 Ta = 100°C -10 25°C −25°C -1 -0.1 VGS = -1.5 V 0 0 -0.5 -1 -1.5 Drain - Source voltage VDS -0.01 0 -2 (V) -1 -2 -3 Gate - Source voltage 20 Common Source ID = -1 mA Drain – Source on-resistance RDS (ON) (Ω) Drain – Source on-resistance RDS (ON) (Ω) 1.8 VGS = -1.5 V 20 15 -2.5 V 10 5 -4 V 0 -1 -100 Drain current 1.6 1.4 1.2 10 8 Ta=100℃ .4 ID 0 -1000 -25℃ 0 -2 -4 RDS (ON) – Ta Vth (V) 30 25 Gate threshold voltage Drain – Source on-resistance RDS (ON) (Ω) Common Source VGS =−1.5 V, ID=-1mA 15 -2.5 V, -10mA 10 5 0 −25 -4V, -10mA 0 25 50 75 -10 -8 VGS (V) Vth – Ta -2 20 -6 Gate - Source voltage (mA) 40 35 25℃ 6 2 -10 VGS (V) RDS (ON) – VGS RDS (ON) – ID 25 -4 100 Ambient temperature Ta 125 -1.8 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 −25 150 (°C) Common Source ID = -0.1 mA VDS = -3 V 0 25 50 75 100 Ambient temperature Ta 7 125 150 (°C) 2007-11-01 SSM6L16FE Q2 (P-ch MOSFET) ⎪Yfs⎪ – ID IDR – VDS -250 -200 Common Source VGS = 0 V Ta = 25°C D IDR 300 (mA) Common Source VDS =−3 V Ta = 25°C 500 100 Drain reverse current Forward transfer admittance ( S) ⎪Yfs⎪ 1000 50 30 10 5 3 1 -1 -10 -100 Drain current ID -150 S -100 -50 0 0 -1000 IDR G 0.2 (mA) 0.4 0.6 Drain - Source VDS 1.2 1.4 (V) 10000 Common Source VGS = 0 V f = 1 MHz Ta = 25°C Common Source VDD = -3 V VGS = 0~-2.5 V Ta = 25°C 5000 (ns) 3000 toff 1000 t 100 10 Switching time C (pF) 1 t – ID c – VDS 200 Capacitance 0.8 Ciss Coss 500 tf 300 100 50 ton tr 30 Crss 1 -0.1 -1 -10 10 -0.1 -100 Drain - Source voltage VDS (V) -1 Drain current ID -10 -100 (mA) Common Characteristics PD – Ta Drain power dissipation PD (mW) 250 Mounted on FR4 board (25.4mmX25.4mmX1.6t CU Pad:0.6mm2X3 200 150 100 50 0 0 20 40 60 80 100 Ambient temperature 120 Ta 140 160 (°C) 8 2007-11-01 SSM6L16FE RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 9 2007-11-01