TOSHIBA SSM5N05FU

SSM5N05FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM5N05FU
High Speed Switching Applications
Unit: mm
·
Small package
·
Low on resistance : Ron = 0.8 Ω (max) (@VGS = 4 V)
: Ron = 1.2 Ω (max) (@VGS = 2.5 V)
·
Low gate threshold voltage
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
20
V
Gate-Source voltage
VGSS
±12
V
DC
ID
400
Pulse
IDP
800
PD (Note1)
300
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55~150
°C
Drain current
Drain power dissipation (Ta = 25°C)
Note1: Total rating, mounted on FR4 board
2
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.32 mm ´ 5)
mA
JEDEC
―
JEITA
―
TOSHIBA
2-2L1B
Weight: 6.2 mg (typ.)
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
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SSM5N05FU
Marking
Equivalent Circuit (top view)
5
4
5
DF
1
2
4
Q1
3
Q2
1
2
3
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol
Min
Typ.
Max
Unit
VGS = ±12 V, VDS = 0
¾
¾
±1
mA
ID = 1 mA, VGS = 0
20
¾
¾
V
VDS = 20 V, VGS = 0
¾
¾
1
mA
Vth
VDS = 3 V, ID = 0.1 mA
0.6
¾
1.1
V
Forward transfer admittance
ïYfsï
VDS = 3 V, ID = 200 mA
(Note2)
350
¾
¾
mS
Drain-Source ON resistance
RDS (ON)
ID = 200 mA, VGS = 4 V
(Note2)
¾
0.6
0.8
ID = 200 mA, VGS = 2.5 V
(Note2)
¾
0.85
1.2
Gate leakage current
IGSS
Drain-Source breakdown voltage
Drain cut-off current
V (BR) DSS
IDSS
Gate threshold voltage
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Switching time
Test Condition
VDS = 3 V, VGS = 0, f = 1 MHz
W
¾
22
¾
pF
¾
9
¾
pF
¾
21
¾
pF
Turn-on time
ton
VDD = 3 V, ID = 100 mA,
¾
60
¾
Turn-off time
toff
VGS = 0~2.5 V
¾
70
¾
ns
Note2: Pulse test
Switching Time Test Circuit
(a) Test circuit
(b) VIN
2.5 V
OUT
2.5 V
90%
50 9
IN
0
10 ms
0V
RL
VDD
(c) VOUT
VDD = 3 V
Duty <
= 1%
VIN: tr, tf < 5 ns
(Zout = 50 W)
Common Source
Ta = 25°C
10%
VDD
VDS (ON)
10%
90%
tr
ton
tf
toff
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 mA for this
product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower
voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) )
Please take this into consideration for using the device. VGS recommended voltage of 2.5 V or higher to turn on
this product.
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SSM5N05FU
(Q1, Q2 common)
ID – VDS
ID – VGS
1000
1000
Common Source
10 4
800
3
VDS = 3 V
100
2.1
400
1.9
Drain current
600
ID
(mA)
2.3
(mA)
ID
Drain current
Common Source
Ta = 25°C
2.5
1.7
200
10
Ta = 100°C
1
25°C
-25°C
0.1
VGS = 1.5 V
0
0
0.5
1.0
1.5
Drain-Source voltage VDS
0.01
0
2.0
0.5
(V)
1.0
1.5
2.0
Gate-Source voltage
RDS (ON) – ID
VGS
3.0
(V)
RDS (ON) – VGS
2.0
2.0
Common Source
Common Source
Ta = 25°C
ID = 200 mA
1.6
Drain-Source on resistance
RDS (ON) (W)
Drain-Source on resistance
RDS (ON) (W)
2.5
1.2
2.5 V
0.8
VGS = 4 V
0.4
1.6
1.2
Ta = 100°C
0.8
25°C
0.4
-25°C
0
0
200
400
Drain current
600
ID
800
0
0
1000
2
(mA)
4
Gate-Source voltage
RDS (ON) – Ta
(mS)
Common Source
ïYfsï
2.5 V
Forward transfer admittance
Drain-Source on resistance
RDS (ON) (W)
ID = 200 mA
1.6
0.8
VGS = 4 V
0.4
0
-25
0
25
50
75
8
VGS
10
(V)
ïYfsï – ID
2.0
1.2
6
100
125
150
Ambient temperature Ta (°C)
5000
Common Source
3000 VDS = 3 V
Ta = 25°C
1000
500
300
100
10
30
50
100
Drain current
3
300
ID
500
1000
(mA)
2002-01-24
SSM5N05FU
(Q1, Q2 common)
IDR – VDS
C – VDS
100
1000
VGS = 0
Ta = 25°C
50
30
(pF)
800
D
600
G
Capacitance C
Drain reverse current IDR
(mA)
Common Source
IDR
S
400
Ciss
10
Coss
5
3
Common Source
Crss
VGS = 0
f = 1 MHz
200
Ta = 25°C
1
0.1
0
0
-0.2
-0.4
-0.6
-0.8
-1.0
Drain-Source voltage VDS
-1.2
0.3
1
-1.4
400
VDD = 3 V
VGS = 0~2.5 V
toff
P D*
Ta = 25°C
tf
Drain power dissipation
Switching time
t
(ns)
Mounted on FR4 board.
(mW)
Common Source
500
50
ton
30
tr
10
1
30
PD* – Ta
t – ID
100
10
(V)
(V)
1000
300
3
Drain-Source voltage VDS
3
10
Drain current
30
ID
100
(25.4 mm ´ 25.4 mm ´ 1.6 t
2
Cu Pad: 0.32 mm ´ 5)
300
200
100
300
0
0
(mA)
20
40
60
80
100
120
140
160
Ambient temperature Ta (°C)
*: Total rating
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SSM5N05FU
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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