2SC5755 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5755 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm · High DC current gain: hFE = 400 to 1000 (IC = 0.2 A) · Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) · High-speed switching: tf = 25 ns (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 7 V Collector current DC IC 2 Pulse ICP 3.5 IB 200 Base current DC Collector power dissipation t = 10 s Junction temperature Storage temperature range PC (Note) A 500 750 mA JEDEC ― mW JEITA ― Tj 150 °C Tstg -55 to 150 °C TOSHIBA 2-3S1C Weight: 0.01 g (typ.) Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm ) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 20 V, IE = 0 ¾ ¾ 100 nA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ¾ ¾ 100 nA V (BR) CEO IC = 10 mA, IB = 0 10 ¾ ¾ V hFE (1) VCE = 2 V, IC = 0.2 A 400 ¾ 1000 hFE (2) VCE = 2 V, IC = 0.6 A 200 ¾ ¾ Collector-emitter saturation voltage VCE (sat) IC = 0.6 A, IB = 12 mA ¾ ¾ 0.12 V Base-emitter saturation voltage VBE (sat) IC = 0.6 A, IB = 12 mA ¾ ¾ 1.10 V See Figure 1 circuit diagram. ¾ 60 ¾ VCC ≈ 6 V, RL = 10 W ¾ 215 ¾ IB1 = -IB2 = 12 mA ¾ 25 ¾ Collector-emitter breakdown voltage DC current gain Rise time Switching time Storage time Fall time tr tstg tf 1 ns 2002-07-22 2SC5755 Marking VCC IB1 Input IB1 RL 20 ms Output WL IB2 IB2 Duty cycle < 1% Figure 1 Switching Time Test Circuit & Timing Chart 2 2002-07-22 2SC5755 IC - VCE 2.4 40 60 hFE - IC 10000 30 2 hFE 8 1.6 6 1.2 DC current gain IC Collector current 3000 10 (A) 20 4 0.8 IB = 2mA 0 0 0 0.2 0.4 0.6 0.8 1.0 Collector-emitter voltage VCE 25 300 -55 100 Common emitter VCE = 2 V Single nonrepetitive pulse 30 Common emitter Ta = 25 °C Single nonrepetitive pulse 0.4 Ta = 100°C 1000 10 0.001 1.2 0.003 0.01 0.03 0.1 Collector current (V) VCE (sat) - IC 0.3 IC 1 3 (A) VBE (sat) - IC 1 10 IC/IB = 50 0.3 Single nonrepetitive pulse Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) Common emitter 25 0.1 Ta = 100°C 0.03 -55 0.01 0.003 0.001 0.001 0.003 0.01 0.03 0.1 Collector current 0.3 IC 1 3 -55 1 (A) Ta = 100°C 0.1 Common emitter 0.03 0.01 0.001 3 25 0.3 IC/IB = 50 Single nonrepetitive pulse 0.003 0.01 0.03 0.1 Collector current 0.3 IC 1 3 (A) IC – VBE Collector current IC (A) 2 Common emitter VCE = 2 V Single nonrepetitive pulse 1.6 1.2 0.8 Ta = 100°C 25 0.4 0 0 0.4 -55 0.8 Base-emitter voltage VBE 1.2 1.6 (V) 3 2002-07-22 2SC5755 rth – tw Transient thermal resistance rth (j-a) (°C/W) 1000 300 100 30 10 Curves should be applied in thermal limited area. 3 Ta = 25°C Single nonrepetitive pulse Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) 1 0.001 0.003 0.01 0.03 0.1 0.3 1 Pulse width 3 tw 10 30 100 300 1000 (s) Safe Operating Area 10 (A) IC max (pulsed)* 3 100 ms* IC max (continuous) 1 0.3 DC operation (Ta = 25°C) *: Single nonrepetitive pulse Ta = 25°C 0.1 Note that the curves for 100 ms, 10 s and DC operation will be different when the devices aren’t mounted on an FR4 0.03 board (glass epoxy, 1.62mm thick, Cu area: 645 mm ). These characteristic curves must be derated linearly with increase in temperature. 0.01 0.03 0.3 3 0.1 1 10 ms* 100 ms* 10 s* VCEO max Collector current IC 1 ms* 10 Collector-emitter voltage VCE 30 100 (V) 4 2002-07-22 2SC5755 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2002-07-22